Light extraction enhancement in light emitting diode covered with ZnO-rGO quantum dots layer: experimental and simulation insight

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-04-28 DOI:10.1007/s11082-025-08184-2

Shakti Prasad Mishra, Rashmita Panda, Kusha Kumar Naik

引用次数: 0

Abstract

We investigate the enhancement of light extraction of a silicon carbide (SiC)-based chip-on-board (COB) light-emitting diode (LED) using a ZnO-rGO QDs thin film as an external layer on the top of the device. The intensity of extracted LED light coated with ZnO-rGO QDs thin film increases by approximately 19% compared to the LED with ZnO QDs thin film without altering the electrical properties. The suitable and integrated combination of ZnO, rGO, and RTV silicone above the LED surface shows the enhancement of light extraction efficiency. The theoretical simulation of the light extraction of the materials also replicates the fact that the ZnO-rGO QDs exhibit better light extraction performance than pristine ZnO and rGO materials.

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ZnO-rGO量子点层覆盖发光二极管的光提取增强：实验和模拟见解

我们研究了利用ZnO-rGO量子点薄膜作为器件顶部的外层，增强碳化硅（SiC）基片上（COB）发光二极管（LED）的光提取。与ZnO- rgo量子点薄膜相比，ZnO- rgo量子点薄膜在不改变电学性能的情况下，发光强度提高了约19%。将ZnO、rGO和RTV有机硅适当地组合在LED表面，可以提高光提取效率。光提取的理论模拟也证实了ZnO-rGO量子点比原始ZnO和rGO材料具有更好的光提取性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.