Optical and Quantum Electronics最新文献

{"title":"Interference cancellation to enhance bit error rate using the YOLO-CSE model","authors":"Wessam M. Salama","doi":"10.1007/s11082-024-08032-9","DOIUrl":"10.1007/s11082-024-08032-9","url":null,"abstract":"<div><p>A novel framework based on combining the You Only Look Once-CSE (YOLO-CSE) model is implemented in this paper with Communication Visible Light (CVL) and Multiple Access non-orthogonality (MANO-CVL) for Multiple Input and Output (MIMO). The main goal of the proposed model is to decrease the detecting error in the received bits and distinguish between noise signal and correct bits. The YOLO-CSE model uses the Yolov5 model as a backbone. Two sorts of regulation are applied; position modulation (L-PPM) with different L and users, inside a Comparable Gain Combiner (CGC) at the recipient. This framework thinks about <span>(n)</span> and <span>(m)</span> clients in the ideal and non-ideal Cancellation of Successive Interferences (CSI). Because of the YOLO-CSE model, the error execution is additionally considered versus the power portion coefficient (α) for <span>(n)</span> and <span>(m)</span> clients switching keying (OOK) balance Single Input and Output (SISO), <span>((n times n), and left( {m times n} right))</span> for CVL based on utilizing the MANO and MIMO frameworks. The proposed model focuses on the significant highlights that have been removed from the dataset by utilizing the Convolutional unit (CBAU). The Fast-Pooling Spatial Pyramid (SPPF +) is likewise applied to the extricated highlights to reuse them. In that unique situation, the exponential block is coordinated to enact the capability for additional exact outcomes. The modified model, YOLO-CSE outperforms the other models in the literature by 18% outperform the other models in the literature.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-024-08032-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of heat treatment on structural and optical properties of 5,10,15,20-tetraphenyl-21H,23H-porphine vanadium (IV) oxide thin films","authors":"N. A. Elsayed,&nbsp;W. M. Desoky,&nbsp;M. M. Hassan,&nbsp;E. A. A. El-Shazly,&nbsp;K. F. Abd El-Rahman","doi":"10.1007/s11082-025-08039-w","DOIUrl":"10.1007/s11082-025-08039-w","url":null,"abstract":"<div><p>Thin films of 5,10,15,20-tetraphenyl-21H,23H-porphine vanadium (IV) oxide, VOTPP, were placed on glass with an overall thickness of 495 nm utilizing the thermal deposition process. The films underwent annealing at various temperatures (323, 373, 423, 473, 573 K) for 3 h. The thermal behaviour of VOTPP powder was tested by DTA. The crystalline molecular structure, and surface morphology of as-deposited and annealed films were examined utilizing XRD, SEM, and AFM. The crystallinity of VOTPP film was enhanced and the crystallite size grew by boosting the annealing temperature. The RMS roughness of annealed film at 573 K is 14.87 nm. Optical parameters of as-deposited and annealed VOTPP films were determined by spectrophotometric measurements in the spectrum of (200–2500 nm). The absorbance spectrum of VOTPP films is characterized by the Soret band, which exhibits Davydov splitting into two peaks, B_x and B_y in the annealed films at 473 and 573 K. Additionally, Q and N bands are observed. Annealing reduces both the linear and nonlinear refractive index, as well as the dispersion parameters. Calculations for molar refractivity and absorptivity, nonlinear parameters, and optical conductivity at different annealing temperatures have been done. Additionally, the energy loss functions at different annealing temperatures were obtained. The electronic transition is indirectly allowed. Optical energies such as <span>({E}_{g}^{onset})</span>, <span>({E}_{g}^{opt1})</span>, <span>({E}_{g}^{opt2})</span>, and <span>({E}_{U})</span> were observed to reduce as the annealing temperature elevated. All the optical parameters were compared with other porphyrin derivatives. This study demonstrates that thermally annealing is an efficient method in enhancing the optical and synthetic characteristics of VOTPP films, which serve as a viable absorbing layer in renewable energy systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08039-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of electron irradiation on microstructural, dielectric and electrical properties of potassium ion conducting PVA solid polymer composite","authors":"B. K. Mahantesha,&nbsp;V. Ravindrachary,&nbsp;L. Rashmi,&nbsp;R. Padmakumari,&nbsp;Shreedatta Hegde,&nbsp;V. C. Petwal","doi":"10.1007/s11082-025-08042-1","DOIUrl":"10.1007/s11082-025-08042-1","url":null,"abstract":"<div><p>The study investigates the solid polymer composite (SPC) made using solution casting with PVA as the host polymer and KI as the dopant. The SPC was exposed to electron beam doses ranging from 0 to 300 kGy to study its microstructural, optical, thermal, electrical, and dielectric properties. XRD, FTIR, and TGA were used to study the structural and thermal properties. Results showed variations in crystalline phase, charge transfer complex formation, and defects due to crosslinking and chain scission processes. The activation energy for thermal decomposition values matches the onset temperature. UV–Vis studies revealed changes in optical properties with radiation dose, attributed to molecular ordering changes, defects formation, and charge transfer complexes. Electric and dielectric properties were studied using impedance spectroscopy. The highest ac conductivity was achieved for 300 kGy-irradiated SPC, attributed to free radical production. The correlated barrier hopping model was found to be the best fit for characterizing the electrical conduction mechanism of the system. Dielectric measurements revealed non-Debye behavior and substantial dielectric dispersion in the frequency range, increasing with irradiation dose. The results suggest the SPC is a potential candidate for solid-state energy storage and conversion applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical analysis and design of a dual-wavelength and selectable all-optical broadband QDs semiconductor optical amplifier (QDs-SOA) with inhomogeneous broadening","authors":"Mahdiyeh Eyvazi,&nbsp;Reza Yadipour,&nbsp;Ali Rostami,&nbsp;Parisa Rostami,&nbsp;Hamid Mirtagioglu","doi":"10.1007/s11082-024-08014-x","DOIUrl":"10.1007/s11082-024-08014-x","url":null,"abstract":"<div><p>This study delves into the significant role played by Quantum Dot Semiconductor Optical Amplifiers (QD-SOAs) in meeting the ever-growing bandwidth demands. QD-SOAs offer a unique blend of cost-effectiveness, integration capabilities, wide bandwidth, rapid responsiveness, robust power output, stability, and spectral adaptability, driving notable advancements in optical communication systems. In this work, we introduce a novel two-wavelength amplifier structure based on Quantum Dot Semiconductor Optical Amplifiers (QD-SOAs) that utilizes quantum dots of different sizes to achieve efficient amplification at specific mid-infrared wavelengths. This innovative approach, which incorporates quantum dots with varying sizes, enables enhanced performance by optimizing the amplification process for each specific wavelength. Furthermore, this work demonstrates the use of tailored optical pumping mechanisms that enhance the carrier recovery process and reduce carrier relaxation times in the active region. This novel optical pumping technique leads to a significant increase in the efficiency and speed of the amplifier, distinguishing this study from others in the field. Simulation results provide detailed insights into the complex interplay between carrier interactions and gain spectra, offering a comprehensive understanding of QD-SOA operational dynamics. The proposed Quantum Dot Semiconductor Optical Amplifier (QD-SOA) achieves significant advancements in optical communication, offering maximum amplification rates of 26.9 and 19.9 times for QD₁ and QD₂, respectively, and bandwidths of 12 THz and 15 THz. The study highlights the role of quantum dot size, homogeneous and inhomogeneous broadening, and optical pumping in enhancing gain and performance, demonstrating the potential of QD-SOAs for high-gain, wide-bandwidth applications in photonic systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of B2O3 on physical, thermal, optical and structural properties of zinc lead selenate glasses","authors":"Venkateshwarlu Kalsani,&nbsp;Suresh Sripada","doi":"10.1007/s11082-024-07177-x","DOIUrl":"10.1007/s11082-024-07177-x","url":null,"abstract":"<div><p>Glass containing zinc-lead boroselenate glasses with the formula 10ZnO–20PbO₂-xB₂O₃–(70 − x)SeO₂ (where 10 ≤ x ≤ 60 mol%) were prepared using the conventional melt quenching method. Several physical properties, including density and molar volume, were determined. Glass transition temperature (T_g) was investigated using differential scanning calorimetry (DSC), revealing a decrease in T_g from 347 to 426 °C as the B₂O₃ content increased. Optical absorption studies showed that as the SeO₂ content decreased, the cutoff wavelength increased while the optical band gap energy (<span>({E}_{opt})</span>) and Urbach energy (<span>({Delta E})</span>) decreased. The <span>({E}_{opt})</span> values for these glasses ranged from 2.699 to 2.091 eV, while ΔE values fell between 0.232 and 0.351 eV. FTIR measurements revealed that SeO₃ tetragonal and SeO₄ pyramidal units, as well as BO₃ and BO₄ units, were present in the network structure of these glasses. Additionally, Raman spectra identified distinct structural units. The FTIR and Raman spectra did not show any specific SeO₂ absorption bands. However, the presence of SeO₂ in the glass matrix changed how PbO₂, ZnO, and B₂O₃ were absorbed.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plasmon effect on the P3HT: ICxA NPs active layer performance","authors":"Hussein Abdul Kareem,&nbsp;Mohammed F. Al-Mudhaffer","doi":"10.1007/s11082-024-07936-w","DOIUrl":"10.1007/s11082-024-07936-w","url":null,"abstract":"<div><p>This study investigates the optical and electrical properties of pure and doped P3HT: ICxA nanoparticles (NPs) with silver (Ag), cobalt (Co), and zinc (Zn), using an optical transfer matrix method (TMM) and a 1D drift–diffusion model in SCAPS for electrical analysis. Modeled current density and quantum efficiency (QE) simulation results were compared with experimental data for a standard P3HT: PCBM donor–acceptor system under 1 sun illumination. Dynamic light scattering (DLS) measurements indicated nanoparticle sizes around 50 nm, consistent with field emission scanning electron microscopy (FESEM) images. Photoluminescence (PL) analysis revealed that P3HT: ICxA-Ag NPs exhibited the lowest charge dissociation, confirming enhanced charge generation and longer carrier lifetimes than Co-, Zn-doped, and pure samples. Optical modeling calculated the current densities for pure, Ag-, Co-, and Zn-doped devices as 6.648, 13.781, 11.819, and 9.160 mA/cm², respectively, assuming ideal device conditions with 100% internal quantum efficiency (IQE). These values were higher than SCAPS-simulated results, which reflected real device performance, exhibiting lower efficiency (0.472%) and a short-circuit current (Jsc) of 2.752 mA/cm². The findings suggest that doping with Ag and Co significantly enhances charge generation and electrical properties, improving device performance.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing the lead-free CsSnBr3/Cs2SnI6 perovskite solar cells: a theoretical study using SCAPS-1D","authors":"Saad Ullah,&nbsp;Firoz Khan,&nbsp;Fatima Rasheed J.,&nbsp;Samina Qamar,&nbsp;Qurat ul Ain,&nbsp;Abdul Majid Mohammed,&nbsp;Haitham M.S. Bahaidarah","doi":"10.1007/s11082-024-08028-5","DOIUrl":"10.1007/s11082-024-08028-5","url":null,"abstract":"<div><p>The optimization of critical parameters to enhance solar cell efficiency has been made possible by the use of SCAPS-1D modeling software, which has facilitated the exhaustive analysis of device performance under a variety of operating conditions. The SCAPS-1D software is utilized in this investigation to simulate and optimize heterojunction perovskite solar cells (PSCs) with a proposed configuration of FTO/ZnOS/CsSnBr₃/Cs₂SnI₆. The bilayer absorption scenario is expected to facilitate the efficient absorption of the solar spectrum and the enhancement of the stability and efficiency of PSCs. The performance of absorbers is assessed using a variety of factors, including absorption thickness, work function, working temperature, defect density, series, and shunt resistance (Rs, R_SH). The optimization of the physical factors substantially enhanced the overall performance capacity for the CsSnBr₃/Cs₂SnI₆-based devices. The optimized device exhibited outstanding performance, achieving a fill factor (FF) of 81.98%, an open-circuit voltage (V_OC) of 1.24 V, a short-circuit current density (J_SC) of 19.09 mA/cm^2, and an impressive power conversion efficiency (PCE) value of 19.44%. These simulation models illustrate the exceptional potential of the novel lead-free heterojunction structure for highly stable and efficient PSCs.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fano resonance-boosted topological sensor for next-generation sensing","authors":"Zeinelabedin A. Mohamed,&nbsp;Alaa M. Abd-Elnaiem,&nbsp;Israa Abood,&nbsp;Mohamed Almokhtar,&nbsp;Sayed El. Soliman","doi":"10.1007/s11082-024-08016-9","DOIUrl":"10.1007/s11082-024-08016-9","url":null,"abstract":"<div><p>The rapidly developing field of topological photonics has the potential to revolutionize the design and operation of optical systems. This study presents a novel approach for constructing a resilient sensor based on topological resonance. The coupling of the photonic crystal waveguide (PCW) with the topological corner state (TCS) within the structure forms the proposed sensor. The PCW provides a well-defined propagating mode, while the TCS is a localized mode that is topologically protected against perturbations. The coupling between the two modes contributes growth to a Fano resonance and results in a sharp and narrow spectral feature sensitive to the refractive index variation of the surrounding medium. The proposed sensor possesses a high sensitivity of ∼461.96 nm/RIU with a high Q-factor <span>(:(:&gt;{10}^{6}))</span>, high figure of merit <span>(::(:&gt;{10}^{6}:{text{R}text{I}text{U}}^{-1}))</span>, and has an ideal detection limit value of<span>(::{10}^{-7}:text{R}text{I}text{U})</span>. The present study gives a new platform for a more productive way of creating highly efficient topological Fano resonance sensors. The proposed sensor is resistant, sensitive, and highly versatile, making it beneficial for different applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-024-08016-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of Cu content on optical spectra of Cu/Mg co-doped ZnO films by Kramers–Kronig","authors":"Mahsa Fakharpour","doi":"10.1007/s11082-024-07994-0","DOIUrl":"10.1007/s11082-024-07994-0","url":null,"abstract":"<div><p>Mg and Cu co-doped ZnO thin films were fabricated on a FTO glass substrate by the electrochemical method at a constant current density of 3.5 mA/cm². Mg: Cu: ZnO films with the 3 wt% Mg concentration and varying concentrations of 0, 2, 3, and 4 wt% Cu are designated as ZM3, ZM3C2, ZM3C3, and ZM3C4, respectively. The thin films were subjected to analysis using XRD, SEM, FTIR and UV-vis spectroscopy. The results of the structural and morphological analysis demonstrated that the structural parameters and grain size are dependent on the concentration of dopants. The results of the spectroscopy analysis indicated a reduction in the band gap, from 3.9 eV to 3.6 eV, as the concentration of Cu in Mg: Cu: ZnO increased from 0 to 4%. The optical parameters of the films were obtained through the utilization of FTIR transmission spectrum data and the application of Kramers–Kronig (K-K) relations. The findings indicated that the ZM3C3 film exhibited the highest energy storage capacity and the lowest energy loss when compared to the other samples.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Time-domain analysis of mode competition in ZnO nanowire lasers in inhomogeneous environments","authors":"Daniel Repp,&nbsp;Angela Barreda,&nbsp;Francesco Vitale,&nbsp;Isabelle Staude,&nbsp;Ulf Peschel,&nbsp;Carsten Ronning,&nbsp;Thomas Pertsch","doi":"10.1007/s11082-024-08001-2","DOIUrl":"10.1007/s11082-024-08001-2","url":null,"abstract":"<div><p>Zinc oxide (ZnO) nanowire lasers are increasingly integrated into complex optoelectronic devices as a source of coherent radiation. To enable the rational design of these devices, it is crucial to understand how both the nanowire resonator and its surrounding environment influence mode competition and the three-dimensional structure of lasing modes. Additionally, realistic models of the lasing process must account for transient gain dynamics. In order to investigate the impact of an inhomogeneous environment, composed of various materials and structures, on mode competition, we conducted Finite-Difference Time-Domain (FDTD) simulations of the dominant lasing modes in different ZnO nanowire laser configurations. Our model describes how key parameters such as nanowire diameter, length, and substrate choice affect the field distribution in the lasing regime. We show that metallic substrates support lasing in thin nanowires in two distinct coupling regimes. Furthermore, we show that metallic particles attached to the nanowire end facets as a result of established nanowire growth techniques significantly influence lasing threshold, field distribution and competition between counter-propagating modes. We show that attaching an aluminum particle at the end facet of a ZnO nanowire leads to a threshold reduction, a switching of the dominant lasing mode and a mono-directional power flow inside a large segment of the nanowire.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-024-08001-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142995136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}