70th Device Research Conference最新文献_第10页

Silicon monolithic MEMS + photonic systems 硅单片MEMS +光子系统

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256960

S. Bhave

引用次数: 0

Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic 超薄体gan -on-绝缘体nfet和pfet:走向iii -氮化物互补逻辑

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256962

Guowang Li, Ronghua Wang, J. Verma, H. Xing, D. Jena

{"title":"Ultra-thin Body GaN-on-insulator nFETs and pFETs: Towards III-nitride complementary logic","authors":"Guowang Li, Ronghua Wang, J. Verma, H. Xing, D. Jena","doi":"10.1109/DRC.2012.6256962","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256962","url":null,"abstract":"Ultra-thin body (UTB) devices with tight electrostatic and quantum confinement of charge carriers have been well developed in highly scaled silicon CMOS technology. For adopting such advanced methods, III-nitrides can benefit immensely from epitaxial AlN as the substrate platform, in contrast to conventional GaN-based substrate platform. With its large polarization charge, wide bandgap and large band offsets, AlN induces the maximal carrier densities while providing the best confinement for nitride channels of all compositions. Such devices stand also to benefit from the symmetry of electronic polarization: high density hole gases can be generated in much the same way as the high density 2DEG in GaN HEMTs, thus enabling p-channel FETs on the same material platform in a logical manner. The AlN/GaN heterojunctions where mobile carriers are located are epitaxial, and excellent transport properties are expected as opposed to the rougher oxide-semiconductor interfaces. Furthermore, AlN is an excellent electrical insulator but simultaneously an excellent thermal conductor, which makes it highly attractive to act as back-barrier and to lower junction temperatures in high power devices by efficient heat dissipation. There have been reports on relaxed GaN n-channel FETs (nFETs) on AlN [1, 2] and III-nitride based p-channel field effect transistors (pFETs) [3, 4]. All the prior work uses relaxed GaN as the channel, and strained GaN channels on AlN have not been explored before. In this work we demonstrate UTB GaN nFETs [5] and pFETs on AlN grown by molecular beam epitaxy (MBE) as the first step towards complementary logic and high power applications.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"19 1","pages":"153-154"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85112817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 8

MoS2-based devices and circuits 基于mos2的器件和电路

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257008

B. Radisavljevic, Daria Krasnozhon, M. Whitwick, A. Kis

引用次数: 1

Mapping a path to the beyond-CMOS technology for computation 映射到超越cmos技术的计算路径

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256942

I. Young

引用次数: 5

Unipolar barrier-integrated HgCdTe infrared detectors 单极势垒集成HgCdTe红外探测器

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257026

A. Itsuno, J. Phillips, S. Velicu

引用次数: 1

III–V 4D transistors III-V - 4D晶体管

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256964

Jiangjiang Gu, Xinwei Wang, J. Shao, A. Neal, M. Manfra, Roy G. Gordon, P. D. Ye

引用次数: 0

Graphene and topological insulator based transistors: Beyond computing applications 石墨烯和基于拓扑绝缘体的晶体管:超越计算应用

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6257029

Y. P. Chen

{"title":"Graphene and topological insulator based transistors: Beyond computing applications","authors":"Y. P. Chen","doi":"10.1109/DRC.2012.6257029","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257029","url":null,"abstract":"Silicon based field effect transistors (FET) have been the foundation of computing industries for decades. As we approach the end of the Moore's law scaling, there have been increasing interests and efforts to explore transistors based on many \"emerging\" (non-Si) materials that may replace or supplement Si in future electronics and computing devices. However, Si and Si-MOSFETs remain exceptionally competitive and hard to beat by most \"emerging\" contenders. On the other hand, many of the non-Si based \"emerging transistors\" have novel physical properties that may make them highly attractive for various non-computing applications. In this talk, I will discuss transistors based on graphene and topological insulators, two classes of materials that have attracted much recent attention in physics and nanoelectronics communities. While both materials feature many novel electronic properties related to the unique Dirac electronic bandstructure, the lack of band gap brings challenges in applying them as digital electronic switches in conventional computing applications. After a brief review of graphene and TI based transistors and their prospects for digital computing applications, I will focus on two examples of exploiting the unique physical properties of these transistors for non-computing applications, particularly sensing and energy conversion.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"37 1","pages":"37-38"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74943804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Al2O3/InSb/Si quantum well MOSFETs having an ultra-thin InSb layer 具有超薄InSb层的Al2O3/InSb/Si量子阱mosfet

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256925

K. Maezawa, T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani

引用次数: 1

Novel double layer graphene transistors-bilayer pseudospin FETs and 2D-2D tunnel FETs 新型双层石墨烯晶体管——双层伪自旋场效应管和2D-2D隧道场效应管

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256938

S. Banerjee, L. Register, E. Tutuc, D. Reddy, S. Kim, D. Basu, C. Corbet, L. Colombo, G. Carpenter, A. Macdonald

引用次数: 0

Hole-blocking TiO2/silicon heterojunction for silicon photovoltaics 用于硅光伏的二氧化钛/硅异质结

70th Device Research Conference Pub Date : 2012-06-18 DOI: 10.1109/DRC.2012.6256955

S. Avasthi, W. McClain, J. Schwartz, J. Sturm

引用次数: 3