III–V 4D transistors

Abstract

We fabricated for the first time vertically and laterally integrated III-V 4D transistors. III-V gate-all-around (GAA) nanowire MOSFETs with 3×4 arrays show high drive current of 1.35mA/μm and high transconductance of 0.85mS/μm. The vertical stacking of the III-V nanowires have provided an elegant solution to the drivability bottleneck of nanowire devices and is promising for future low-power logic and RF application.