70th Device Research Conference最新文献

{"title":"Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF current","authors":"S. Gupta, J. Kulkarni, S. Datta, K. Roy","doi":"10.1109/DRC.2012.6257027","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257027","url":null,"abstract":"We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"5 1","pages":"55-56"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81987412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-stage model for lifetime prediction of highly stable amorphous-silicon thin-film transistors under low-gate field","authors":"Ting Liu, S. Wagner, J. Sturm","doi":"10.1109/DRC.2012.6257025","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257025","url":null,"abstract":"Highly stable a-Si TFTs reported recently with extremely long operating lifetimes under DC gate bias are attractive for analog drivers of the OLEDs in AMOLED displays. At room temperature, the time for the DC saturation current to drop to 50% is predicted to be 100 to 1,000 years. However, the lifetimes were extrapolated with a stretched-exponential model for defect creation in a-Si, based on only month-long room temperature tests. In this study, we present a two-stage threshold voltage shift model for lifetime prediction from temperature dependent measurements. We find that (i) a “unified stretched exponential fit” models the drain current degradation from 60°C to 140°; and (ii) there is a second instability mechanism that initially dominates up to hours or days at low temperatures, so that tests conducted only at room temperature may not predict lifetime accurately.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"35 1","pages":"245-246"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86625041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Alternative graphene devices: beyond field effect transistors","authors":"M. Lemme, S. Vaziri, A. D. Smith, M. Ostling","doi":"10.1109/DRC.2012.6257028","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257028","url":null,"abstract":"The future manufacturability of graphene devices depends on the availability of large-scale graphene fabrication methods. While chemical vapor deposition and epitaxy from silicon carbide both promise scalability, they are not (yet) fully compatible with silicon technology. Direct growth of graphene on insulating substrates would be a major step, but is still at a very early stage [1]. This has implications on potential entry points of graphene as an add-on to mainstream silicon technology, which will be discussed in the talk.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"70 1","pages":"24a-24b"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74668218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"278 nm deep ultraviolet LEDs with 11% external quantum efficiency","authors":"M. Shatalov, Wenhong Sun, A. Lunev, Xuhong Hu, A. Dobrinsky, Y. Bilenko, Jinwei Yang, M. Shur, R. Gaska, C. Moe, G. Garrett, M. Wraback","doi":"10.1109/DRC.2012.6257013","DOIUrl":"https://doi.org/10.1109/DRC.2012.6257013","url":null,"abstract":"III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) offer smaller size, wider choice of peak emission wavelengths, lower power consumption and reduced cost compared to mercury vapor lamps and other UV light sources. Increasing efficiency of DUV LEDs accelerates their applications in bio-agent detection, analytical instrumentation, phototherapy, disinfection, biotechnology and sensing. We report on 278 nm DUV LEDs with external quantum efficiency exceeding 10 % achieved by improvements of material quality and light extraction.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"16 1","pages":"255-256"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77706377","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates","authors":"M. Ebrish, S. Koester","doi":"10.1109/DRC.2012.6256974","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256974","url":null,"abstract":"The temperature-dependent C-V characteristics for two samples with target HfO2 thicknesses of 20 nm (sample A), and 10 nm (sample B) are shown in Figs. 2 and 3. The results show that the capacitance tuning range increases with decreasing HfO2 thicknesses, as expected. A comparison of the normalized C-V curves for both samples at room temperature is shown in Fig. 4. The capacitance tuning range from Vg - VDirac = 0 to +1.5 V is 1.17:1 for sample A and 1.38:1 for sample B. Fig. 5 shows a comparison of the C-V characteristics for the varactors with MIM capacitors fabricated on the same sample. A very consistent trend is observed where the capacitance-per-unit-area for the MIM capacitors is significantly higher than for the varactors. The EOT values extracted from the MIM capacitors are found to be 4.1 nm and 2.7 nm for samples A and B, respectively. In order to understand this behavior in more detail, numerical modeling was performed on the temperature-dependent C-V characteristics where the random potential fluctuations, σ, in the graphene was used as an adjustable fitting parameter [5]. The results are shown in Fig. 6. The fact that the fitted EOT values cannot completely account for the capacitance reduction in Fig. 5 is a strong indicator that the effective device area of the varactors is less than the layout area. However, additional modeling, particularly taking into account the effect of interface traps, and other imperfections between the graphene and HfO2 [6-7] is needed to fully understand the observed behavior. In the future, further scaling of the EOT needs to be investigated, as well as fabrication of the devices on insulating substrates for eventual use in resonator circuits. As a preliminary demonstration (Fig. 7), we have fabricated a single-finger varactor on a quartz substrate, with EOT (as determined by MIM capacitors) of 1.9 nm and tuning range >;1.5:1 at room temperature.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"7 1","pages":"105-106"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85942949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Biologically-inspired learning device using three-terminal ferroelectric memristor","authors":"M. Ueda, Y. Kaneko, Y. Nishitani, T. Morie, E. Fujii","doi":"10.1109/DRC.2012.6256971","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256971","url":null,"abstract":"A simple synaptic device with a spike-timing-dependent synaptic plasticity (STDP) learning function is a key device that can realize a brain-like processor. STDP is a learning mechanism of synapses in mammalian brains [1]. A memristor [2, 3] is a promising candidate for synaptic devices. However, since the conventional memristor is a two-terminal electric element and the signal magnitude at learning exceeds the processing, it is difficult to realize STDP learning by simultaneously processing the signal. We proposed a unique three-terminal memristor using a ferroelectric thin film [4]. Its three-terminal device structure enables the STDP function without disturbing the signal processing between neurons (Fig. 1). This all oxide memristor (OxiM) has a ferroelectric gate field-effect transistor structure (Fig. 2). Since the polarization of Pb(Zr,Ti)O3 film is changed by applying gate voltage (VG), the channel conductance at the ZnO / Pr(Zr,Ti)O3 interface can be modulated (Fig. 3). Memorized conductance can be maintained without fluctuation [4]. In addition, ferroelectric polarization can be modulated by changing the height and the width of the applied voltage pulse to the gate electrode. Fig. 4 shows the conduction change after applying pulse voltages.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"31 1","pages":"275-276"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90250491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploration of vertical MOSFET and tunnel FET device architecture for Sub 10nm node applications","authors":"H. Liu, D. Mohata, A. Nidhi, V. Saripalli, V. Narayanan, S. Datta","doi":"10.1109/DRC.2012.6256990","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256990","url":null,"abstract":"A vertical device architecture having -40% density improvement over planar for sub-10nm technology node has been evaluated for Si NMOS and III-V HTFET with Lg=16nm. For LOP applications including the effect of parasitic elements, the HTFET presents superior energy efficiency and desired low-power analog performance for VDD<;0.6V, while MOSFET is superior for VDD>;0.6V. To further improve MOSFET performance, ION needs to be improved with higher injection velocity materials (e.g. III-V). For delay reduction, the parasitic capacitances (Cov and Cg,fringe) and contact resistance need to be further engineered for both MOSFETs and TFETs.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"16 1","pages":"233-234"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80097856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly sensitive III–V nitride based piezoresistive microcantilever using embedded AlGaN/GaN HFET as ultrasonic detector","authors":"A. Talukdar, M. Qazi, G. Koley","doi":"10.1109/DRC.2012.6256983","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256983","url":null,"abstract":"Summary form only given.We report, for the first time, an ultra high gauge factor of more than 3500 observed using AlGaN/GaN Heterostructure Field Effect Transistor (HFET) embedded GaN piezoresistive microcantilever. In addition, the deflection transduction signal from the HFET was utilized to determine dynamic bending as well as AC frequency response of the cantilever. Finally, the piezoresistive microcantilver was used to detect very small acoustic pressure waves generated by a piezo chip oscillated at sub nm amplitude at the resonance frequency of the cantilever positioned 1 cm away, highlighting the utility of these cantilevers as highly sensitive ultrasonic transducers. FET embedded microcantilevers are ideal for developing integrated electronic detection platform for biological and chemical analytes. GaN microcantilever with integrated AlGaN/GaN HFET deflection transducer offers very high mechanical, thermal, and chemical stability, in addition to extraordinary deflection sensitivity due to its strong piezoelectric properties. The piezoelectric property of III-V Nitrides causes a highly mobile (>;1500 cm2/Vs) two dimensional electron gas (2DEG) to form at the AlGaN/GaN interface, which gets strongly affected by the deflection induced strain. In addition, the electron mobility also changes due to the change in effective mass. The combined changes in 2DEG and mobility offer very high deflection sensitivity, verified through COMSOL finite element simulations and experimental observations. The effect of mechanical strain caused by microcantilever bending on the 2DEG and the AlGaN/GaN HFET characteristics has been reported experimentally [1] and theoretically [2] earlier, but this for the first time we have obtained such a high Gauge Factor. Microcantilevers were fabricated using III-V Nitride layers on Si(111). The layer structure consisted of i-GaN (2 nm)/ AlGaN (17.5 nm, 26% Al)/i-GaN (1 μm)/Transition layer (1.1 μm)/Si (111) substrate (500 μm). Fig. 1 (a) shows the SEM image of the fabricated device with the HFET shown in the inset. The HFET was fabricated with initial 200 nm mesa etching, followed by Ti(20 nm)/Al(100 nm)/Ti(45 nm)/Au(55 nm) metal stack deposition and rapid thermal annealing for ohmic contact formation. For gate contact, Ni(25 nm)/Au(375 nm) Schottky barrier was used. The fabricated microcantilever dimension is 350×50×2 μm. The GaN cantilever pattern was etched down using Ch based inductively coupled plasma etch process. Fig. 1 (b) shows the schematics of the experimental setup using our wire bonded device (shown as inset in Fig. 2) and Nanopositioner's (PI-611 Z). Fig. 2 shows the Id-V d characteristics of one of our best devices for different gate bias. In Fig. 3 the static bending performance is shown where the drain current is found to change by 6.3 % in magnitude, which gives a gauge factor of 3532. Both the downward and upward bending of cantilever exhibited similar changes. The movement of the nanopositioner was contr","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"1 1","pages":"19-20"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82947284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"440 V AlSiN-passivated AlGaN/GaN high electron mobility transistor with 40 GHz bandwidth","authors":"E. Harvard, J. Shealy","doi":"10.1109/DRC.2012.6256933","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256933","url":null,"abstract":"In conclusion, we present an AIGaN/GaN HEMT which exhibits a high off-state breakdown voltage with small features and without a field plate, while maintaining high bandwidth. High voltage load line mapping of these devices at 2 GHz is in progress.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"14 1","pages":"75-76"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87798139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Solid-state electronics and single-molecule biophysics","authors":"K. Shepard","doi":"10.1109/DRC.2012.6256965","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256965","url":null,"abstract":"Biomolecular systems are traditionally studied using ensemble measurements and fluorescence-based detection. Among the most common in vitro applications are DNA microarrays to identify target gene expression profiles [1] and enzyme-linked immunosorbent assays (ELISA) to identify proteins [2]. While much can be determined with ensemble measurements, scientific and technological interest is rapidly moving to single-molecule techniques. When probing at the single-molecule level, observations can be made about the inter- and intramolecular dynamics that are usually hidden in ensemble measurements. In molecular diagnostic, single-molecule techniques often do not require amplification and simplify sample preparation. The most popular single-molecule techniques based on fluorescence [3, 4] are fundamentally limited in resolution and bandwidth by the countable number of photons emitted by a single fluorophore (typically on the order of 2500 photons/sec). Instrumentation is complex, expensive, and large-form-factor. Furthermore, most optical probes photobleach, limiting observation times and pump powers. Single-molecule measurements of the kinetics of fast biomolecular processes are often unavailable through fluorescent techniques, as they lack the required temporal resolution.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"11 1","pages":"7-8"},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85648410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}