无掺杂异质结带内隧道(HIBT)场效应管具有低漏极诱导势垒降低/稀释(DIBL/T)和低关断电流变化

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6257027

S. Gupta, J. Kulkarni, S. Datta, K. Roy

{"title":"无掺杂异质结带内隧道(HIBT)场效应管具有低漏极诱导势垒降低/稀释(DIBL/T)和低关断电流变化","authors":"S. Gupta, J. Kulkarni, S. Datta, K. Roy","doi":"10.1109/DRC.2012.6257027","DOIUrl":null,"url":null,"abstract":"We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"5 1","pages":"55-56"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF current\",\"authors\":\"S. Gupta, J. Kulkarni, S. Datta, K. Roy\",\"doi\":\"10.1109/DRC.2012.6257027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"5 1\",\"pages\":\"55-56\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6257027\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6257027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们提出了异质结带内隧道(HIBT) fet，与Si双栅(DG) mosfet相比，它具有较低的关断电流(IOFF)对参数变化(PV)的敏感性和较低的漏极诱导势垒降薄(DIBLlT)。我们评估了HIBT fet的低IOFF变化对SRAM泄漏和稳定性的影响，并展示了它们在低功耗应用中的潜力。

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Dopant straggle-free heterojunction intra-band tunnel (HIBT) FETs with low drain-induced barrier lowering/thinning (DIBL/T) and reduced variation in OFF current

We propose heterojunction intra-band tunnel (HIBT) FETs with reduced sensitivity of OFF current (IOFF) to parameter variations (PV) and lower drain-induced barrier loweringlthinning (DIBLlT) compared to Si double gate (DG) MOSFETs. We evaluate the impact of low IOFF variations in HIBT FETs on SRAM leakage and stability and show their potential for low power applications.

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70th Device Research Conference

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