{"title":"40ghz带宽的440 V alsin钝化AlGaN/GaN高电子迁移率晶体管","authors":"E. Harvard, J. Shealy","doi":"10.1109/DRC.2012.6256933","DOIUrl":null,"url":null,"abstract":"In conclusion, we present an AIGaN/GaN HEMT which exhibits a high off-state breakdown voltage with small features and without a field plate, while maintaining high bandwidth. High voltage load line mapping of these devices at 2 GHz is in progress.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"14 1","pages":"75-76"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"440 V AlSiN-passivated AlGaN/GaN high electron mobility transistor with 40 GHz bandwidth\",\"authors\":\"E. Harvard, J. Shealy\",\"doi\":\"10.1109/DRC.2012.6256933\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In conclusion, we present an AIGaN/GaN HEMT which exhibits a high off-state breakdown voltage with small features and without a field plate, while maintaining high bandwidth. High voltage load line mapping of these devices at 2 GHz is in progress.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"14 1\",\"pages\":\"75-76\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6256933\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256933","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
440 V AlSiN-passivated AlGaN/GaN high electron mobility transistor with 40 GHz bandwidth
In conclusion, we present an AIGaN/GaN HEMT which exhibits a high off-state breakdown voltage with small features and without a field plate, while maintaining high bandwidth. High voltage load line mapping of these devices at 2 GHz is in progress.
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