石墨烯和基于拓扑绝缘体的晶体管:超越计算应用

Y. P. Chen
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引用次数: 2

摘要

几十年来,硅基场效应晶体管(FET)一直是计算机工业的基础。随着摩尔定律的终结,人们越来越有兴趣和努力探索基于许多“新兴”(非硅)材料的晶体管,这些材料可能在未来的电子和计算设备中取代或补充硅。然而,Si和Si- mosfet仍然极具竞争力,很难被大多数“新兴”竞争者击败。另一方面,许多非硅基“新兴晶体管”具有新颖的物理特性,这可能使它们对各种非计算应用具有很高的吸引力。在这次演讲中,我将讨论基于石墨烯和拓扑绝缘体的晶体管,这两类材料最近在物理学和纳米电子学领域引起了很多关注。虽然这两种材料都具有与独特的狄拉克电子带结构相关的许多新颖的电子特性,但缺乏带隙给将它们作为传统计算应用中的数字电子开关带来了挑战。在简要回顾了基于石墨烯和TI的晶体管及其在数字计算应用中的前景之后,我将重点介绍两个将这些晶体管的独特物理特性用于非计算应用的例子,特别是传感和能量转换。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Graphene and topological insulator based transistors: Beyond computing applications
Silicon based field effect transistors (FET) have been the foundation of computing industries for decades. As we approach the end of the Moore's law scaling, there have been increasing interests and efforts to explore transistors based on many "emerging" (non-Si) materials that may replace or supplement Si in future electronics and computing devices. However, Si and Si-MOSFETs remain exceptionally competitive and hard to beat by most "emerging" contenders. On the other hand, many of the non-Si based "emerging transistors" have novel physical properties that may make them highly attractive for various non-computing applications. In this talk, I will discuss transistors based on graphene and topological insulators, two classes of materials that have attracted much recent attention in physics and nanoelectronics communities. While both materials feature many novel electronic properties related to the unique Dirac electronic bandstructure, the lack of band gap brings challenges in applying them as digital electronic switches in conventional computing applications. After a brief review of graphene and TI based transistors and their prospects for digital computing applications, I will focus on two examples of exploiting the unique physical properties of these transistors for non-computing applications, particularly sensing and energy conversion.
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