{"title":"用于硅光伏的二氧化钛/硅异质结","authors":"S. Avasthi, W. McClain, J. Schwartz, J. Sturm","doi":"10.1109/DRC.2012.6256955","DOIUrl":null,"url":null,"abstract":"Narrow bandgap heterojunctions on crystalline silicon such as Si/Si1-xGex are now in widespread use, but to date there has been little progress on widegap heterojunctions on silicon. In this abstract, we report: (i) TiO2/Si heterojunction with a band alignment which blocks holes from silicon but freely passes electrons, and (ii) the application of this heterojunction to form a photovoltaic cell on silicon with no p-n junction, and all fabrication below a temperature of 75 °C.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"9 1","pages":"93-94"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Hole-blocking TiO2/silicon heterojunction for silicon photovoltaics\",\"authors\":\"S. Avasthi, W. McClain, J. Schwartz, J. Sturm\",\"doi\":\"10.1109/DRC.2012.6256955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Narrow bandgap heterojunctions on crystalline silicon such as Si/Si1-xGex are now in widespread use, but to date there has been little progress on widegap heterojunctions on silicon. In this abstract, we report: (i) TiO2/Si heterojunction with a band alignment which blocks holes from silicon but freely passes electrons, and (ii) the application of this heterojunction to form a photovoltaic cell on silicon with no p-n junction, and all fabrication below a temperature of 75 °C.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"9 1\",\"pages\":\"93-94\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6256955\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hole-blocking TiO2/silicon heterojunction for silicon photovoltaics
Narrow bandgap heterojunctions on crystalline silicon such as Si/Si1-xGex are now in widespread use, but to date there has been little progress on widegap heterojunctions on silicon. In this abstract, we report: (i) TiO2/Si heterojunction with a band alignment which blocks holes from silicon but freely passes electrons, and (ii) the application of this heterojunction to form a photovoltaic cell on silicon with no p-n junction, and all fabrication below a temperature of 75 °C.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
