具有超薄InSb层的Al2O3/InSb/Si量子阱mosfet

70th Device Research Conference Pub Date : 2012-06-18 DOI:10.1109/DRC.2012.6256925

K. Maezawa, T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani

{"title":"具有超薄InSb层的Al2O3/InSb/Si量子阱mosfet","authors":"K. Maezawa, T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani","doi":"10.1109/DRC.2012.6256925","DOIUrl":null,"url":null,"abstract":"The fabrication and the properties of Al2O3-InSb-Si QW MOSFETs having an ultra thin InSb channel layer is reported. The good characteristic of ID-VD with an transconductance of 67 mS/mm demonstrates that the ultra thin InSb channel layer grown directly on Si can be used for MOSFET channels. The results show that the InSb/Si pseudomorphic quantum well MOSFETs is a promising candidate for future VLSIs.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"10 1","pages":"45-46"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Al2O3/InSb/Si quantum well MOSFETs having an ultra-thin InSb layer\",\"authors\":\"K. Maezawa, T. Ito, A. Kadoda, K. Nakayama, Y. Yasui, M. Mori, E. Miyazaki, T. Mizutani\",\"doi\":\"10.1109/DRC.2012.6256925\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fabrication and the properties of Al2O3-InSb-Si QW MOSFETs having an ultra thin InSb channel layer is reported. The good characteristic of ID-VD with an transconductance of 67 mS/mm demonstrates that the ultra thin InSb channel layer grown directly on Si can be used for MOSFET channels. The results show that the InSb/Si pseudomorphic quantum well MOSFETs is a promising candidate for future VLSIs.\",\"PeriodicalId\":6808,\"journal\":{\"name\":\"70th Device Research Conference\",\"volume\":\"10 1\",\"pages\":\"45-46\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"70th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2012.6256925\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6256925","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

报道了具有超薄InSb沟道层的Al2O3-InSb-Si QW mosfet的制备及其性能。跨导率为67 mS/mm的超薄InSb沟道层可用于MOSFET沟道。结果表明，InSb/Si伪晶量子阱mosfet是未来超大规模集成电路的理想候选器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Al2O3/InSb/Si quantum well MOSFETs having an ultra-thin InSb layer

The fabrication and the properties of Al2O3-InSb-Si QW MOSFETs having an ultra thin InSb channel layer is reported. The good characteristic of ID-VD with an transconductance of 67 mS/mm demonstrates that the ultra thin InSb channel layer grown directly on Si can be used for MOSFET channels. The results show that the InSb/Si pseudomorphic quantum well MOSFETs is a promising candidate for future VLSIs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

70th Device Research Conference

自引率

0.00%

发文量