基于mos2的器件和电路

B. Radisavljevic, Daria Krasnozhon, M. Whitwick, A. Kis
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引用次数: 1

摘要

与传统的三维电子材料或一维纳米材料(如纳米管和纳米线)相比,二维晶体具有几个固有的优势。通过将二维层裁剪成所需的形状,它们的平面几何结构使得制造电路和复杂结构变得更加容易。由于其原子尺度的厚度,二维材料也代表了垂直尺寸小型化的极限,并且由于增强的静电控制,可以制造更短的晶体管。二维半导体的另一个优点是它们的电子特性(带隙、迁移率、功函数)可以通过改变层数或施加外部电场来调节。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
MoS2-based devices and circuits
Two-dimensional crystals offer several inherent advantages over conventional 3D electronic materials or 1D nanomaterials such as nanotubes and nanowires. Their planar geometry makes it easier to fabricate circuits and complex structures by tailoring 2D layers into desired shapes. Because of their atomic scale thickness, 2D materials also represent the ultimate limit of miniaturization in the vertical dimension and allow the fabrication of shorter transistors due to enhanced electrostatic control. Another advantage of 2D semiconductors is that their electronic properties (band gap, mobility, work function) can be tuned for example by changing the number of layers or applying external electric fields.
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