映射到超越cmos技术的计算路径

I. Young
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引用次数: 5

摘要

本文描述了一种超越CMOS探索性设备的基准测试方法,使用可以提供有关设备基本操作的见解的指标进行计算。本文对基于两个超cmos器件的电路进行了更详细的研究。首先将隧道效应晶体管电路与低功耗CMOS电路进行比较。然后对全自旋逻辑器件(ASLD)进行了描述,并利用一个基于自旋电路理论的模拟器来展示全自旋逻辑电路的功能瞬态运行。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mapping a path to the beyond-CMOS technology for computation
This paper describes a methodology for benchmarking beyond CMOS exploratory devices for computation using metrics that can provide insights about the device fundamental operation. A more detailed investigation of circuits based upon two beyond-CMOS devices is given in the paper. First tunneling FET (TFET) circuits are compared to low power CMOS circuits. Then the All-Spin Logic device (ASLD) is described and a spin circuit theory based simulator is used to show the functional transient operation of an all spin logic circuit.
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