Al2O3/InSb/Si quantum well MOSFETs having an ultra-thin InSb layer

Abstract

The fabrication and the properties of Al2O3-InSb-Si QW MOSFETs having an ultra thin InSb channel layer is reported. The good characteristic of ID-VD with an transconductance of 67 mS/mm demonstrates that the ultra thin InSb channel layer grown directly on Si can be used for MOSFET channels. The results show that the InSb/Si pseudomorphic quantum well MOSFETs is a promising candidate for future VLSIs.