2010 Silicon Nanoelectronics Workshop最新文献_第6页

Experimental progress of and prospects for nanomagnet logic (NML) 纳米磁逻辑(NML)的实验进展与展望

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562573

M. Alam, Gary H. Bernstein, Jeffrey Bokor, David Carlton, X. Hu, S. Kurtz, B. Lambson, M. Niemier, W. Porod, M. Siddiq, E. Varga

引用次数: 7

Origin of “current-onset voltage” variability in scaled MOSFETs 缩放mosfet中“电流起始电压”可变性的起源

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562596

Ashok Kumar, T. Mizutani, K. Shimizu, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto

引用次数: 10

Internal structure and electrical properties of Ge quantum dot in single-electron transistors 单电子晶体管中Ge量子点的内部结构和电学性质

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562546

K. H. Chen, I. Chen, P. W. Li

引用次数: 1

CMOS-compatible fabrication of room-temperature Ge QD single hole transistors 室温锗量子点单孔晶体管的cmos兼容制造

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562548

I. Chen, K. H. Chen, H. Chou, Pei-Wen Li

引用次数: 0

Π-gate nanowires TANOS poly-Si TFT nonvolatile memory Π-gate纳米线TANOS多晶硅TFT非易失性存储器

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562547

Min-Feng Hung, Jiang-Hung Chen, Yung-Chun Wu

引用次数: 0

Control of dopant-induced quantum dots by channel geometry 掺杂诱导量子点的通道几何控制

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562584

D. Moraru, R. Nakamura, Sakito Miki, T. Mizuno, M. Tabe

引用次数: 0

Evaluation of adhesion materials for gold line-and-space surface plasmon antenna on SOI-MOS photodiode SOI-MOS光电二极管金线-空间表面等离子体天线粘附材料的评价

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562555

H. Satoh, Yuki Matsuo, H. Inokawa, A. Ono

引用次数: 2

Performance characteristics of strongly correlated bilayer graphene for post-CMOS logic devices 后cmos逻辑器件中强相关双层石墨烯的性能特征

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562544

B. Dellabetta, M. J. Gilbert

引用次数: 4

Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires 尺寸和几何效应对硅纳米线空穴有效质量的紧密结合研究

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562567

Naoya Moriokaa, H. Yoshioka, J. Suda, T. Kimoto

引用次数: 0

Modeling hole effective mass of Si modulated by external field 模拟外场调制的硅孔有效质量

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562574

Y. Omura

{"title":"Modeling hole effective mass of Si modulated by external field","authors":"Y. Omura","doi":"10.1109/SNW.2010.5562574","DOIUrl":"https://doi.org/10.1109/SNW.2010.5562574","url":null,"abstract":"Figure 1 shows the confinement effective mass (m*zz,2D-hole,n-par(001)) dependence on tS for Fext=104 V/cm; the transport effective mass (m*xx,2D-hole,n-par(001)) and bulk mass values are also shown for comparison. It is seen that in such a low field the 2-D heavy hole mass value (m*zz,2D-hole,n-par(001)) decreases as tS increases for the parameters appearing in [5], although the 2-D heavy hole mass (m*zz,2D-hole,n-par(001)) slightly increases as tS increases for the parameters appearing in [6], almost holding its bulk value. On the other hand, the light hole mass value increases as tS increases regardless of parameters. Subsequently, the impact of band nonparabolicity on the 2-D hole effective mass of valence band holes appears for a large range of tS. This is directly related the magnitude of band bending in the Si layer; the perturbation energy is roughly expressed by (1/2)etSFext and this reduces the hole energy. In contrast to the behavior of the confinement effective mass, the estimated transport effective mass along the kx axis (m*xx,2D-hole,n-par(001)) is almost free from confinement. This behavior is specified only for the (001) surface, but the transport effective mass for the (011) surface is sensitive to confinement (not shown here). If the physical confinement is normal to the (011) surface, we can see that this is due to the weak sensitivity of hole band dispersion to the external field because the ground-state level energy of 2-D holes is determined by the heavy hole mass.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74449942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1