2010 Silicon Nanoelectronics Workshop最新文献_第6页

Experimental progress of and prospects for nanomagnet logic (NML) 纳米磁逻辑(NML)的实验进展与展望

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562573

M. Alam, Gary H. Bernstein, Jeffrey Bokor, David Carlton, X. Hu, S. Kurtz, B. Lambson, M. Niemier, W. Porod, M. Siddiq, E. Varga

引用次数: 7

Origin of “current-onset voltage” variability in scaled MOSFETs 缩放mosfet中“电流起始电压”可变性的起源

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562596

Ashok Kumar, T. Mizutani, K. Shimizu, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto

引用次数: 10

Internal structure and electrical properties of Ge quantum dot in single-electron transistors 单电子晶体管中Ge量子点的内部结构和电学性质

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562546

K. H. Chen, I. Chen, P. W. Li

引用次数: 1

CMOS-compatible fabrication of room-temperature Ge QD single hole transistors 室温锗量子点单孔晶体管的cmos兼容制造

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562548

I. Chen, K. H. Chen, H. Chou, Pei-Wen Li

引用次数: 0

Π-gate nanowires TANOS poly-Si TFT nonvolatile memory Π-gate纳米线TANOS多晶硅TFT非易失性存储器

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562547

Min-Feng Hung, Jiang-Hung Chen, Yung-Chun Wu

引用次数: 0

Control of dopant-induced quantum dots by channel geometry 掺杂诱导量子点的通道几何控制

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562584

D. Moraru, R. Nakamura, Sakito Miki, T. Mizuno, M. Tabe

引用次数: 0

Evaluation of adhesion materials for gold line-and-space surface plasmon antenna on SOI-MOS photodiode SOI-MOS光电二极管金线-空间表面等离子体天线粘附材料的评价

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562555

H. Satoh, Yuki Matsuo, H. Inokawa, A. Ono

引用次数: 2

Performance characteristics of strongly correlated bilayer graphene for post-CMOS logic devices 后cmos逻辑器件中强相关双层石墨烯的性能特征

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562544

B. Dellabetta, M. J. Gilbert

引用次数: 4

Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires 尺寸和几何效应对硅纳米线空穴有效质量的紧密结合研究

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562567

Naoya Moriokaa, H. Yoshioka, J. Suda, T. Kimoto

引用次数: 0

Modeling hole effective mass of Si modulated by external field 模拟外场调制的硅孔有效质量

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI: 10.1109/SNW.2010.5562574

Y. Omura

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引用次数: 1