D. Moraru, R. Nakamura, Sakito Miki, T. Mizuno, M. Tabe
{"title":"Control of dopant-induced quantum dots by channel geometry","authors":"D. Moraru, R. Nakamura, Sakito Miki, T. Mizuno, M. Tabe","doi":"10.1109/SNW.2010.5562584","DOIUrl":null,"url":null,"abstract":"We show that single electron transport through discrete dopants can be realized by controlling the channel geometry and utilizing the favorable effect of a statistical number of dopants. This may allow control for new applications such as dopant-based turnstiles.4,5","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":"19 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562584","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We show that single electron transport through discrete dopants can be realized by controlling the channel geometry and utilizing the favorable effect of a statistical number of dopants. This may allow control for new applications such as dopant-based turnstiles.4,5