Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires

Abstract

The present tight-binding study of rectangular SiNWs along [001], [110], and [111] revealed that the hole m* of [001] and [110] NWs on the {001} basal face has strong dependence on the width. Because this nature may make the design of devices difficult, these NWs are considered to be unfavorable for p-channel devices. In contrast, rectangular [111] NWs on both (112̄) and (1̄10) basal faces are favorable for p-channel devices because they have the smallest hole m* and its value is very resistant to the variability of the width.