缩放mosfet中“电流起始电压”可变性的起源

2010 Silicon Nanoelectronics Workshop Pub Date : 2010-06-13 DOI:10.1109/SNW.2010.5562596

Ashok Kumar, T. Mizutani, K. Shimizu, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto

{"title":"缩放mosfet中“电流起始电压”可变性的起源","authors":"Ashok Kumar, T. Mizutani, K. Shimizu, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto","doi":"10.1109/SNW.2010.5562596","DOIUrl":null,"url":null,"abstract":"Present work analyzes the cause of “current-onset voltage” variability, which has been newly found to largely affect drain current variability [1]. It is found by 3D device simulation that the “current-onset voltage” variability is determined by how largely the channel potential fluctuates by random dopant disposition. Reducing RDF will suppress both threshold voltage and current-onset voltage variability as well.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":"108 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Origin of “current-onset voltage” variability in scaled MOSFETs\",\"authors\":\"Ashok Kumar, T. Mizutani, K. Shimizu, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto\",\"doi\":\"10.1109/SNW.2010.5562596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Present work analyzes the cause of “current-onset voltage” variability, which has been newly found to largely affect drain current variability [1]. It is found by 3D device simulation that the “current-onset voltage” variability is determined by how largely the channel potential fluctuates by random dopant disposition. Reducing RDF will suppress both threshold voltage and current-onset voltage variability as well.\",\"PeriodicalId\":6433,\"journal\":{\"name\":\"2010 Silicon Nanoelectronics Workshop\",\"volume\":\"108 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Silicon Nanoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2010.5562596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

目前的工作分析了“电流起始电压”变异性的原因，新发现它在很大程度上影响漏极电流变异性[1]。通过三维器件模拟发现，“电流起始电压”的可变性取决于掺杂剂随机配置时通道电位波动的程度。降低RDF将抑制阈值电压和电流起始电压的可变性。

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Origin of “current-onset voltage” variability in scaled MOSFETs

Present work analyzes the cause of “current-onset voltage” variability, which has been newly found to largely affect drain current variability [1]. It is found by 3D device simulation that the “current-onset voltage” variability is determined by how largely the channel potential fluctuates by random dopant disposition. Reducing RDF will suppress both threshold voltage and current-onset voltage variability as well.

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2010 Silicon Nanoelectronics Workshop

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