{"title":"尺寸和几何效应对硅纳米线空穴有效质量的紧密结合研究","authors":"Naoya Moriokaa, H. Yoshioka, J. Suda, T. Kimoto","doi":"10.1109/SNW.2010.5562567","DOIUrl":null,"url":null,"abstract":"The present tight-binding study of rectangular SiNWs along [001], [110], and [111] revealed that the hole m* of [001] and [110] NWs on the {001} basal face has strong dependence on the width. Because this nature may make the design of devices difficult, these NWs are considered to be unfavorable for p-channel devices. In contrast, rectangular [111] NWs on both (112̄) and (1̄10) basal faces are favorable for p-channel devices because they have the smallest hole m* and its value is very resistant to the variability of the width.","PeriodicalId":6433,"journal":{"name":"2010 Silicon Nanoelectronics Workshop","volume":"9 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires\",\"authors\":\"Naoya Moriokaa, H. Yoshioka, J. Suda, T. Kimoto\",\"doi\":\"10.1109/SNW.2010.5562567\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The present tight-binding study of rectangular SiNWs along [001], [110], and [111] revealed that the hole m* of [001] and [110] NWs on the {001} basal face has strong dependence on the width. Because this nature may make the design of devices difficult, these NWs are considered to be unfavorable for p-channel devices. In contrast, rectangular [111] NWs on both (112̄) and (1̄10) basal faces are favorable for p-channel devices because they have the smallest hole m* and its value is very resistant to the variability of the width.\",\"PeriodicalId\":6433,\"journal\":{\"name\":\"2010 Silicon Nanoelectronics Workshop\",\"volume\":\"9 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Silicon Nanoelectronics Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SNW.2010.5562567\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Silicon Nanoelectronics Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SNW.2010.5562567","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tight-binding study of size and geometric effects on hole effective mass of silicon nanowires
The present tight-binding study of rectangular SiNWs along [001], [110], and [111] revealed that the hole m* of [001] and [110] NWs on the {001} basal face has strong dependence on the width. Because this nature may make the design of devices difficult, these NWs are considered to be unfavorable for p-channel devices. In contrast, rectangular [111] NWs on both (112̄) and (1̄10) basal faces are favorable for p-channel devices because they have the smallest hole m* and its value is very resistant to the variability of the width.
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