Origin of “current-onset voltage” variability in scaled MOSFETs

Ashok Kumar, T. Mizutani, K. Shimizu, T. Tsunomura, A. Nishida, K. Takeuchi, S. Inaba, S. Kamohara, K. Terada, T. Hiramoto
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引用次数: 10

Abstract

Present work analyzes the cause of “current-onset voltage” variability, which has been newly found to largely affect drain current variability [1]. It is found by 3D device simulation that the “current-onset voltage” variability is determined by how largely the channel potential fluctuates by random dopant disposition. Reducing RDF will suppress both threshold voltage and current-onset voltage variability as well.
缩放mosfet中“电流起始电压”可变性的起源
目前的工作分析了“电流起始电压”变异性的原因,新发现它在很大程度上影响漏极电流变异性[1]。通过三维器件模拟发现,“电流起始电压”的可变性取决于掺杂剂随机配置时通道电位波动的程度。降低RDF将抑制阈值电压和电流起始电压的可变性。
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