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2008 IEEE International Conference on Semiconductor Electronics最新文献

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IR-UWB channel capacity for analog and mostly digital implementation IR-UWB信道容量用于模拟和大多数数字实现
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703439
A. Lecointre, D. Dragomirescu, R. Plana
{"title":"IR-UWB channel capacity for analog and mostly digital implementation","authors":"A. Lecointre, D. Dragomirescu, R. Plana","doi":"10.1109/SMICND.2008.4703439","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703439","url":null,"abstract":"The impact of the type of implementation is considered on the IR-UWB channel capacity. This study is lead for analog and mostly digital implementation. Key parameters and theirs impacts on the channel capacity are exposed in each case: data converters for mostly digital implementations and pulse generators capabilities for analog implementations. These two implementations are compared from a data rate point of view. Their behaviors regarding an increase of the operating frequency are also studied.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"6 1","pages":"403-406"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80157420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Characterization and modeling of planar circuits by an iterative method 平面电路的迭代表征与建模
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703427
M. Tellache, B. Haraoubia, H. Baudrand
{"title":"Characterization and modeling of planar circuits by an iterative method","authors":"M. Tellache, B. Haraoubia, H. Baudrand","doi":"10.1109/SMICND.2008.4703427","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703427","url":null,"abstract":"In the present work, the modeling of high frequencies planar circuits is proposed with an original iterative method based on the concept of waves. It consists in the development of simulation software based on an iterative method. The iterative method is developed from the fast modal transform based on a 2DFFT algorithm. The method has been applied to the characterization and the modeling of patch antennas with notches in coplanar technology and the quarter wavelength directive coupler. The obtained results are very satisfactory particularly in the reduction of the simulation time and the precision of the results in comparison with the literature.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"15 1","pages":"367-370"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82470315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of trap discharging processes in Multiple Quantum Well structures 多量子阱结构中阱放电过程的建模
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703332
M. Ciurea, V. Iancu, I. Stavarache, A. Lepadatu, E. Rusnac
{"title":"Modeling of trap discharging processes in Multiple Quantum Well structures","authors":"M. Ciurea, V. Iancu, I. Stavarache, A. Lepadatu, E. Rusnac","doi":"10.1109/SMICND.2008.4703332","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703332","url":null,"abstract":"The paper presents the modeling of trap discharging processes in Multiple Quantum Well nanostructures. The coupling between trapping and detrapping phenomena, due to the CaF2 buffer layers is discussed. The relative role of tunneling and displacement currents is also analyzed. The model allows the determination of trap parameters that are not directly measurable. The results are in good agreement with the experimental data.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"11 1","pages":"81-84"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87765679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recombination properties of ZnIn2S4:Cu single crystals ZnIn2S4:Cu单晶的复合性能
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703391
V. Zhitar’, V. Pavlenko, E. Arama, T. Shemyakova
{"title":"Recombination properties of ZnIn2S4:Cu single crystals","authors":"V. Zhitar’, V. Pavlenko, E. Arama, T. Shemyakova","doi":"10.1109/SMICND.2008.4703391","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703391","url":null,"abstract":"Recombination characteristics of ZnIn2S4 single crystals doped with high copper concentration were investigated. The spectra of photoconductivity, spectra of excitation and radiation of luminescence at 20degC are given. Their peculiarities are described and analyzed. Comparison of the spectra allowed to propose the model for recombination processes and the dominating mechanism of radiation transitions for single crystals of this compound. It was shown that these processes are determined by the system of deep levels and by exponentially distributed states.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"229 1","pages":"241-244"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86251833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optimization of wiregrid polarizers for CO2 laser CO2激光器用线栅偏振器的优化设计
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703345
P. Logofatu, D. Apostol, A. Dinescu, R. Muller, D. Cristea
{"title":"Optimization of wiregrid polarizers for CO2 laser","authors":"P. Logofatu, D. Apostol, A. Dinescu, R. Muller, D. Cristea","doi":"10.1109/SMICND.2008.4703345","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703345","url":null,"abstract":"Metallic gratings (wiregrids) can function as efficient polarizers with high extinction ratio. The polarizing effect is due to the fact that these gratings act as a metal for the polarization parallel to the lines, reflecting most of it and absorbing the rest, and as a dielectric for the polarization perpendicular to the lines, transmitting profusely. A short semi-intuitive explanation of this behavior is given. A wiregrid polarizer for the CO2 lasers is designed and then the parameters of the grating that can be varied - according to the specifics of the available lithographic procedure - are optimized. The sets of optimum polarizer parameters together with the corresponding performances are listed and discussed from a practical point of view.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"84 1","pages":"121-124"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81485132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS temperature sensors - concepts, state-of-the-art and prospects CMOS温度传感器-概念，现状和前景
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703322
F. Udrea, S. Santra, J. Gardner
{"title":"CMOS temperature sensors - concepts, state-of-the-art and prospects","authors":"F. Udrea, S. Santra, J. Gardner","doi":"10.1109/SMICND.2008.4703322","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703322","url":null,"abstract":"The paper reviews the state-of-the-art in IC temperature sensors. It starts by revisiting the semiconductor theory of thermodiodes and thermotransistors, continues with the introduction of IC temperature sensors, the concepts of VPTAT - voltage proportional to absolute temperature and IPTAT (current proportional to absolute temperature) and discusses the possibility of use of parasitic bipolar transistors as temperature sensors in pure CMOS technology. The next section demonstrates the very high operating temperature of a dasiaspecialpsila thermodiode, well beyond the typical IC silicon junction temperature. This is achieved with a diode embedded in an SOI CMOS micro-hotplate. A discussion on the temperature limits of integrated temperature sensors is also given. The final section outlines the prospects of IC temperature sensors.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"29 1","pages":"31-40"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88526282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
ZnO thin films deposited by spray pyrolysis technique 喷雾热解法制备ZnO薄膜
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703402
D. Perniu, M. Duţă, D. Catrinoi, C. Toader, M. Gosman, E. Ienei, A. Duţă
{"title":"ZnO thin films deposited by spray pyrolysis technique","authors":"D. Perniu, M. Duţă, D. Catrinoi, C. Toader, M. Gosman, E. Ienei, A. Duţă","doi":"10.1109/SMICND.2008.4703402","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703402","url":null,"abstract":"Thin films of undoped and Al- and Ag-doped ZnO thin films have been obtained by spray pyrolysis deposition. The optimised parameters of deposition for the thin films to be used in optoelectronic applications are presented in the paper. The addition of low amounts of Al and Ag ions influences the film crystallinity and morphology. Based on the experimental results it is concluded that aluminium and silver act as dopants and reduce the band gap value of the host oxide, ZnO.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"38 1","pages":"279-282"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75657233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High precision over current detection for a high side switch 高精度过电流检测高侧开关
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703433
Ana-Maria Luca, I.-A. Tranca, A. Danchiv
{"title":"High precision over current detection for a high side switch","authors":"Ana-Maria Luca, I.-A. Tranca, A. Danchiv","doi":"10.1109/SMICND.2008.4703433","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703433","url":null,"abstract":"This paper presents a precision over current protective function integrated in a high side power switch. The accuracy improvement is based on using a low offset, autozero amplifier for providing the same bias conditions for both the power and the sense transistors.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"39 1","pages":"385-388"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83375245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A new design based on electro-thermally actuation for an SU-8 microgripper 基于电热驱动的SU-8微夹持器新设计
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703369
R. Voicu, R. Muller, L. Eftime
{"title":"A new design based on electro-thermally actuation for an SU-8 microgripper","authors":"R. Voicu, R. Muller, L. Eftime","doi":"10.1109/SMICND.2008.4703369","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703369","url":null,"abstract":"A new design for a polymeric microgripper was developed. Two microgripper with different dimensions were considered. An evaluation between these models was performed using the simulation results. Finite-element analyses of the microgripper, using COVENTORWARE, are performed in order to evaluate the relation between the displacement, temperatures and the electrical current passing through the metallic layers.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"5 1","pages":"205-208"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78430892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polysulfone- doped polyaniline composite membranes. synthesis and electrochemical characteristics 聚砜掺杂聚苯胺复合膜。合成及电化学特性
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703392
Ș. Voicu, N. D. Stanciu, A. Nechifor, D. Vãireanu, G. Nechifor
{"title":"Polysulfone- doped polyaniline composite membranes. synthesis and electrochemical characteristics","authors":"Ș. Voicu, N. D. Stanciu, A. Nechifor, D. Vãireanu, G. Nechifor","doi":"10.1109/SMICND.2008.4703392","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703392","url":null,"abstract":"In order to combine the advantages of polysulfone (PSf) as a membrane material to that of polyaniline as a conductive polymer, one has attempted to obtain novel polysulfone-polyaniline composite membranes by a newly improved technique comparing to the existing ones. The strong point of this technique consists in a phase inversion by immersion precipitation accompanying by chemical reaction followed by the activation of polyaniline with sulfonated beta-cyclodextrine. The above synthesized membranes were structurally characterized using Scanning Electron Microscopy, FT-IR spectroscopy, thermal analysis. The ionic conductivity and electrochemical characteristics were also determined by Electrochemical Impedance Spectroscopy.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"60 1","pages":"245-248"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78731875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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