2008 IEEE International Conference on Semiconductor Electronics最新文献_第10页

Investigations on energy scavenging methods using MEMS devices 基于MEMS器件的能量清除方法研究

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703357

G. De Pasquale, A. Somà

引用次数: 11

Function generator by direct-digital frequency synthesis 函数发生器由直接数字频率合成

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703445

Radu-Sebastian Marinescu, C. Burileanu

引用次数: 2

A compact current-voltage model for carbon nanotube field effect transistors 碳纳米管场效应晶体管的紧凑电流-电压模型

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703425

Hadi Hosseinzadegan, H. Aghababa, Mahmoud Zangeneh, A. Afzali-Kusha, B. Forouzandeh

引用次数: 4

Effect of frequency and phase setting in obtaining scanning guided waves in composite plates 频率和相位设置对复合材料中扫描导波的影响

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703422

N. Constantin, S. Sorohan, M. Găvan, V. Anghel, V. Raeţchi

引用次数: 0

Analysis of potential function in cylindrical nanowires 圆柱形纳米线的势函数分析

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703424

Mahmoud Zangeneh, H. Aghababa, B. Forouzandeh

引用次数: 0

Liquid-crystalline properties of some poly(ester-amide)s 一些聚(酯-酰胺)的液晶性质

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703405

I. Sava

引用次数: 0

Quantum nanoelectronics: Challenges and opportunities 量子纳米电子学:挑战与机遇

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-01 DOI: 10.1109/SMELEC.2008.4770261

V. Arora, M. Tan

{"title":"Quantum nanoelectronics: Challenges and opportunities","authors":"V. Arora, M. Tan","doi":"10.1109/SMELEC.2008.4770261","DOIUrl":"https://doi.org/10.1109/SMELEC.2008.4770261","url":null,"abstract":"After forty years of advances in integrated circuit technology, the scaling of Silicon Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has entered the nanometer dimension with the introduction of 90 nm high volume manufacturing in 2004. Presently at 45 nm going to 32 nm node in 2009, the latest technological advancement has led to low power, high-density and high-speed generation of microprocessors. VLSI circuit and device simulation programs rely heavily on the laws of physics that are being discovered and re-discovered as devices are being scaled down to nanometer regime. The scaling of the Si MOSFET below 22 nm may soon meet its fundamental physical limitations. Nevertheless, novel devices and structures such as graphene, carbon nanotube field effect transistors (CNFETs) and nanowires offer a solution to overcome the performance limits. A clear understanding of a unique electronics and transport properties is vital as simulation programs always lag behind in implementing new findings and parameters that may or may not be physics-based. This paper examines quantum and nonohmic transport phenomena that are capable of predicting the performance of a nanostructure in device and circuit simulations. The ideas presented will allow researchers to identify the input physical processes to form an intelligent perspective in interpreting the output obtained.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"88 1","pages":"A1-A6"},"PeriodicalIF":0.0,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75024899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Capacitive pressure sensors based on MEMS, operating in harsh environments 基于MEMS的电容式压力传感器，可在恶劣环境下工作

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-11-25 DOI: 10.1109/SMELEC.2008.4770304

Y. Hezarjaribi, M. Hamidon, S. Keshmiri, A. Bahadorimehr

{"title":"Capacitive pressure sensors based on MEMS, operating in harsh environments","authors":"Y. Hezarjaribi, M. Hamidon, S. Keshmiri, A. Bahadorimehr","doi":"10.1109/SMELEC.2008.4770304","DOIUrl":"https://doi.org/10.1109/SMELEC.2008.4770304","url":null,"abstract":"Poly-crystalline silicon carbide (polysic) Micro-electromechanical systems (MEMS) capacitive pressure sensors operating at harsh environments (e.g. high temperature) are proposed because of SiC owing excellent electrical stability, mechanical robustness, and chemical inertness properties. The principle of this paper is, design, simulation. The application of SiC pressure sensors are in a harsh environments such as automotive industries, aerospace, oil/logging equipments, nuclear station, power station. The sensor demonstrated a high temperature sensing capability up to 400degC, the device achieves a linear characteristic response and consists of a circular clamped-edges poly-sic diaphragm suspended over sealed cavity on a silicon carbide substrate. The sensor is operating in touch mode capacitive pressure sensor, The advantages of a touch mode are the robust structure that make the sensor to withstand harsh environment, near linear output, and large over-range protection, operating in wide range of pressure, higher sensitivity than the near linear operation in normal mode, so in this case some of stray capacitance effects can be neglected.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"49 1","pages":"184-187"},"PeriodicalIF":0.0,"publicationDate":"2008-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77665767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 28

DOE study on etching rate of silicon nitride (Si3N4) layer via RIE nitride etching process RIE氮化硅蚀刻工艺对氮化硅(Si3N4)层蚀刻速率的DOE研究

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-11-01 DOI: 10.1109/SMELEC.2008.4770409

N. H. Ghazali, H. Soetedjo, N. A. Ngah, A. Yusof, A. Dolah, M. Yahya

引用次数: 3

Analogue diagnosis of CMOS floating gate defect (FGD) using Genetic Algorithms (GAs) 基于遗传算法的CMOS浮栅缺陷模拟诊断

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-11-01 DOI: 10.1109/SMELEC.2008.4770353

W. Y. Chiew, S. Binti, A. Radzi

{"title":"Analogue diagnosis of CMOS floating gate defect (FGD) using Genetic Algorithms (GAs)","authors":"W. Y. Chiew, S. Binti, A. Radzi","doi":"10.1109/SMELEC.2008.4770353","DOIUrl":"https://doi.org/10.1109/SMELEC.2008.4770353","url":null,"abstract":"As manufacturers go into volume production with 90 nm designs and below, the floating gate defect (FGD) diagnosis has become a challenge in the initial yield ramp. Since floating gate can result in state-holding, intermittent and pattern-dependent fault effects, these models are generally more complex. Consequently, logical testing is proven can not guarantee the detection of the defect. In this paper, analogue diagnosis to the defect based on defective current is proposed. The magnitude of abnormal increased of power supply current is mainly subjected to the specific location in the Circuit Under Test (CUT), magnitude of input voltage and its sequence. Current open defect diagnosis methods are either keep repeating the circuit simulation based on try and error technique which is tedious or consider part of the factors only for the defect. Thus, the diagnosis results from current procedures may not be as accurate as possible and fully covered. In the proposed method, the significant difference of defective current and the magnitude of voltage supply in sequence are considered using optimization of genetic algorithms (GAs). Results show that the proposed method can achieve a very high diagnosis accuracy and simulation time.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"25 1","pages":"414-417"},"PeriodicalIF":0.0,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74596975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1