N. H. Ghazali, H. Soetedjo, N. A. Ngah, A. Yusof, A. Dolah, M. Yahya
{"title":"RIE氮化硅蚀刻工艺对氮化硅(Si3N4)层蚀刻速率的DOE研究","authors":"N. H. Ghazali, H. Soetedjo, N. A. Ngah, A. Yusof, A. Dolah, M. Yahya","doi":"10.1109/SMELEC.2008.4770409","DOIUrl":null,"url":null,"abstract":"In the electronic device fabrication, etching is one of the important processes to do. For this work, the dry etching was done to silicon nitride layer under a CF4 / O2 gas mixture using reactive ion etching (RIE) process has been investigated. This etching process was carried out at a room temperature with gas pressure of 500 mTorr, RF power of 60-80 W, O2 and CF4 flow rate of 5-10 sccm and 40-50 sccm respectively. From the process, a statistical method of Design of Experiment (DOE) Pro XL software was utilized for appropriate analysis.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"17 1","pages":"649-652"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"DOE study on etching rate of silicon nitride (Si3N4) layer via RIE nitride etching process\",\"authors\":\"N. H. Ghazali, H. Soetedjo, N. A. Ngah, A. Yusof, A. Dolah, M. Yahya\",\"doi\":\"10.1109/SMELEC.2008.4770409\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the electronic device fabrication, etching is one of the important processes to do. For this work, the dry etching was done to silicon nitride layer under a CF4 / O2 gas mixture using reactive ion etching (RIE) process has been investigated. This etching process was carried out at a room temperature with gas pressure of 500 mTorr, RF power of 60-80 W, O2 and CF4 flow rate of 5-10 sccm and 40-50 sccm respectively. From the process, a statistical method of Design of Experiment (DOE) Pro XL software was utilized for appropriate analysis.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"17 1\",\"pages\":\"649-652\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2008.4770409\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2008.4770409","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
在电子器件制造中，蚀刻是重要的工艺之一。为此，研究了在CF4 / O2混合气体条件下，采用反应离子刻蚀(RIE)工艺对氮化硅层进行干刻蚀。该刻蚀过程在室温下进行，气体压力为500 mTorr，射频功率为60-80 W, O2和CF4流量分别为5-10 sccm和40-50 sccm。从实验过程来看，利用Design of Experiment (DOE) Pro XL软件的统计方法进行适当的分析。
DOE study on etching rate of silicon nitride (Si3N4) layer via RIE nitride etching process
In the electronic device fabrication, etching is one of the important processes to do. For this work, the dry etching was done to silicon nitride layer under a CF4 / O2 gas mixture using reactive ion etching (RIE) process has been investigated. This etching process was carried out at a room temperature with gas pressure of 500 mTorr, RF power of 60-80 W, O2 and CF4 flow rate of 5-10 sccm and 40-50 sccm respectively. From the process, a statistical method of Design of Experiment (DOE) Pro XL software was utilized for appropriate analysis.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
