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2008 IEEE International Conference on Semiconductor Electronics最新文献

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Surface-grating-based distributed feedback lasers fabricated using nanoimprint lithography 纳米压印光刻技术制备基于表面光栅的分布式反馈激光器
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703337
J. Viheriala, A. Laakso, M. Dumitrescu, J. Tommila, K. Haring, T. Leinonen, S. Ranta, M. Pessa
{"title":"Surface-grating-based distributed feedback lasers fabricated using nanoimprint lithography","authors":"J. Viheriala, A. Laakso, M. Dumitrescu, J. Tommila, K. Haring, T. Leinonen, S. Ranta, M. Pessa","doi":"10.1109/SMICND.2008.4703337","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703337","url":null,"abstract":"Distributed feedback lasers with third-order surface gratings obtained by lateral corrugations of the ridge waveguide have been fabricated using low-cost nanoimprint lithography. The lasers, emitting in the 980 nm wavelength range exhibited stable single-longitudinal-mode operation with side-mode suppression ratios up to 50 dB.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79800407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three dual switching power supplies modules 三个双路开关电源模块
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703418
A. Florescu, A. Radoi, C. Radoi, D. Vizireanu
{"title":"Three dual switching power supplies modules","authors":"A. Florescu, A. Radoi, C. Radoi, D. Vizireanu","doi":"10.1109/SMICND.2008.4703418","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703418","url":null,"abstract":"The paper presents different methods of using MC34063 and muA78S40 monolithic switching regulator subsystems to construct dual switching power supplies with step-down and step-up converters. General description of MC34063 and muA78S40 operation modes, mathematical design applied on numerical examples, PSpice under ORCAD simulation of the whole switching power supply and practical implementations are included. Some practical considerations are also specified.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84008327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Programmable cellular automata based encryption algorithm 基于可编程元胞自动机的加密算法
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703423
P. Anghelescu, E. Sofron, C. Rîncu, Vasile-Gabriel Iana
{"title":"Programmable cellular automata based encryption algorithm","authors":"P. Anghelescu, E. Sofron, C. Rîncu, Vasile-Gabriel Iana","doi":"10.1109/SMICND.2008.4703423","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703423","url":null,"abstract":"In this paper, we present a new encryption algorithm based on the programmable cellular automata (PCA) theory. The cryptosystem is featured by its large key space and high speed due to cellular automatapsilas parallel information processing property. Moreover, the encryption and decryption devices share the identical modules, which give appropriate solutions for implementation of the cryptographic modules in high speed applications. So the scheme could be implemented efficiently in hardware, in reconfigurable hardware structures. The design has been implemented in both: in software using C# programming language and in hardware on a XC3S500E FPGA board using VHDL.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80909568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Simulation, design and microfabrication of multichannel microprobe for bioelectrical signals recording 用于生物电信号记录的多通道微探针的仿真、设计与微制造
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703362
B. Firtat, R. Iosub, D. Necula, E. Franti, F. Babarada, C. Moldovan, F. Lazo
{"title":"Simulation, design and microfabrication of multichannel microprobe for bioelectrical signals recording","authors":"B. Firtat, R. Iosub, D. Necula, E. Franti, F. Babarada, C. Moldovan, F. Lazo","doi":"10.1109/SMICND.2008.4703362","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703362","url":null,"abstract":"The extracellular potential simultaneous recording permits the investigation of the central nervous activity. The paper presents the design and manufacturing steps of a five electrodes microprobe for recording the electrical activity of neural cells and tissues integrated on the same chip with the electronics. The specific fabrication processes of the integrated microprobe are presented. An implantable neural microprobe is going to be developed to enable the correlation between electrical activity in the human nervous system and externally psychoelectrical stimuli. The electronics accomplish the separation and reduction of the biological noise recording.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83919899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A high performance PZT type material used as sensor for an audio high frequency piezoelectric siren 一种用于音频高频压电警报器传感器的高性能PZT型材料
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703364
C. Miclea, C. Tănăsoiu, A. Iuga, I. Spanulescu, C. Miclea, C. Plăviţu, L. Amarande, M. Cioangher, L. Trupina, C. Miclea, T. Tanasoiu
{"title":"A high performance PZT type material used as sensor for an audio high frequency piezoelectric siren","authors":"C. Miclea, C. Tănăsoiu, A. Iuga, I. Spanulescu, C. Miclea, C. Plăviţu, L. Amarande, M. Cioangher, L. Trupina, C. Miclea, T. Tanasoiu","doi":"10.1109/SMICND.2008.4703364","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703364","url":null,"abstract":"A high quality PZT type material was designed and produced in order to be used as sensor for a high internsity siren. Two disks from this materials were assembled into a parallel bimorph type transducer with an intermediate metallic plate. This assembly behaves like an acoustic resonator in the high frequency audio range. The fundamental of the flexural mode for a free resonator is taken into account. Its frequency dependence on the geometry of the system and on its material properties is computed using the results for a circular plate with clamped edges and an observation on the equivalence between the movement of a particular part of a resonator in a stationary state and the movement of that part separated from the resonator but with the same border conditions. Acoustical and impedance measurements were made in order to appreciate the influence of the metallic plate on the frequency. In order to increase the acoustic emission a frontal cardboard horn was added to the resonator.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77213187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recombination properties of ZnIn2S4:Cu single crystals ZnIn2S4:Cu单晶的复合性能
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703391
V. Zhitar’, V. Pavlenko, E. Arama, T. Shemyakova
{"title":"Recombination properties of ZnIn2S4:Cu single crystals","authors":"V. Zhitar’, V. Pavlenko, E. Arama, T. Shemyakova","doi":"10.1109/SMICND.2008.4703391","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703391","url":null,"abstract":"Recombination characteristics of ZnIn2S4 single crystals doped with high copper concentration were investigated. The spectra of photoconductivity, spectra of excitation and radiation of luminescence at 20degC are given. Their peculiarities are described and analyzed. Comparison of the spectra allowed to propose the model for recombination processes and the dominating mechanism of radiation transitions for single crystals of this compound. It was shown that these processes are determined by the system of deep levels and by exponentially distributed states.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86251833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optimization of wiregrid polarizers for CO2 laser CO2激光器用线栅偏振器的优化设计
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703345
P. Logofatu, D. Apostol, A. Dinescu, R. Muller, D. Cristea
{"title":"Optimization of wiregrid polarizers for CO2 laser","authors":"P. Logofatu, D. Apostol, A. Dinescu, R. Muller, D. Cristea","doi":"10.1109/SMICND.2008.4703345","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703345","url":null,"abstract":"Metallic gratings (wiregrids) can function as efficient polarizers with high extinction ratio. The polarizing effect is due to the fact that these gratings act as a metal for the polarization parallel to the lines, reflecting most of it and absorbing the rest, and as a dielectric for the polarization perpendicular to the lines, transmitting profusely. A short semi-intuitive explanation of this behavior is given. A wiregrid polarizer for the CO2 lasers is designed and then the parameters of the grating that can be varied - according to the specifics of the available lithographic procedure - are optimized. The sets of optimum polarizer parameters together with the corresponding performances are listed and discussed from a practical point of view.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81485132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of trap discharging processes in Multiple Quantum Well structures 多量子阱结构中阱放电过程的建模
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703332
M. Ciurea, V. Iancu, I. Stavarache, A. Lepadatu, E. Rusnac
{"title":"Modeling of trap discharging processes in Multiple Quantum Well structures","authors":"M. Ciurea, V. Iancu, I. Stavarache, A. Lepadatu, E. Rusnac","doi":"10.1109/SMICND.2008.4703332","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703332","url":null,"abstract":"The paper presents the modeling of trap discharging processes in Multiple Quantum Well nanostructures. The coupling between trapping and detrapping phenomena, due to the CaF2 buffer layers is discussed. The relative role of tunneling and displacement currents is also analyzed. The model allows the determination of trap parameters that are not directly measurable. The results are in good agreement with the experimental data.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87765679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
CMOS temperature sensors - concepts, state-of-the-art and prospects CMOS温度传感器-概念，现状和前景
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703322
F. Udrea, S. Santra, J. Gardner
{"title":"CMOS temperature sensors - concepts, state-of-the-art and prospects","authors":"F. Udrea, S. Santra, J. Gardner","doi":"10.1109/SMICND.2008.4703322","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703322","url":null,"abstract":"The paper reviews the state-of-the-art in IC temperature sensors. It starts by revisiting the semiconductor theory of thermodiodes and thermotransistors, continues with the introduction of IC temperature sensors, the concepts of VPTAT - voltage proportional to absolute temperature and IPTAT (current proportional to absolute temperature) and discusses the possibility of use of parasitic bipolar transistors as temperature sensors in pure CMOS technology. The next section demonstrates the very high operating temperature of a dasiaspecialpsila thermodiode, well beyond the typical IC silicon junction temperature. This is achieved with a diode embedded in an SOI CMOS micro-hotplate. A discussion on the temperature limits of integrated temperature sensors is also given. The final section outlines the prospects of IC temperature sensors.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88526282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 39
Characterization and modeling of planar circuits by an iterative method 平面电路的迭代表征与建模
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703427
M. Tellache, B. Haraoubia, H. Baudrand
{"title":"Characterization and modeling of planar circuits by an iterative method","authors":"M. Tellache, B. Haraoubia, H. Baudrand","doi":"10.1109/SMICND.2008.4703427","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703427","url":null,"abstract":"In the present work, the modeling of high frequencies planar circuits is proposed with an original iterative method based on the concept of waves. It consists in the development of simulation software based on an iterative method. The iterative method is developed from the fast modal transform based on a 2DFFT algorithm. The method has been applied to the characterization and the modeling of patch antennas with notches in coplanar technology and the quarter wavelength directive coupler. The obtained results are very satisfactory particularly in the reduction of the simulation time and the precision of the results in comparison with the literature.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82470315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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