A. Bragaru, M. Miu, F. Craciunoiu, I. Kleps, M. Simion, T. Ignat
{"title":"纳米结构膜上湿度传感器的工艺制备","authors":"A. Bragaru, M. Miu, F. Craciunoiu, I. Kleps, M. Simion, T. Ignat","doi":"10.1109/SMICND.2008.4703365","DOIUrl":null,"url":null,"abstract":"Recently, for sensors application, porous silicon has received a great attention due to the high specific surface area and the easy fabrication using standard processes from silicon technology. The design and technology for a resistive humidity sensor full integrated on silicon is presented in this paper. This sensor integrates both the interdigitated microelectrodes array for detection, and the resistance for accelerated desorbtion process controlled by a temperature sensor.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"30 1","pages":"189-192"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Technological fabrication of the humidity sensors on nanostructurated membranes\",\"authors\":\"A. Bragaru, M. Miu, F. Craciunoiu, I. Kleps, M. Simion, T. Ignat\",\"doi\":\"10.1109/SMICND.2008.4703365\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recently, for sensors application, porous silicon has received a great attention due to the high specific surface area and the easy fabrication using standard processes from silicon technology. The design and technology for a resistive humidity sensor full integrated on silicon is presented in this paper. This sensor integrates both the interdigitated microelectrodes array for detection, and the resistance for accelerated desorbtion process controlled by a temperature sensor.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"30 1\",\"pages\":\"189-192\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703365\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703365","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Technological fabrication of the humidity sensors on nanostructurated membranes
Recently, for sensors application, porous silicon has received a great attention due to the high specific surface area and the easy fabrication using standard processes from silicon technology. The design and technology for a resistive humidity sensor full integrated on silicon is presented in this paper. This sensor integrates both the interdigitated microelectrodes array for detection, and the resistance for accelerated desorbtion process controlled by a temperature sensor.