{"title":"ZnIn2S4:Cu单晶的复合性能","authors":"V. Zhitar’, V. Pavlenko, E. Arama, T. Shemyakova","doi":"10.1109/SMICND.2008.4703391","DOIUrl":null,"url":null,"abstract":"Recombination characteristics of ZnIn2S4 single crystals doped with high copper concentration were investigated. The spectra of photoconductivity, spectra of excitation and radiation of luminescence at 20degC are given. Their peculiarities are described and analyzed. Comparison of the spectra allowed to propose the model for recombination processes and the dominating mechanism of radiation transitions for single crystals of this compound. It was shown that these processes are determined by the system of deep levels and by exponentially distributed states.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"229 1","pages":"241-244"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Recombination properties of ZnIn2S4:Cu single crystals\",\"authors\":\"V. Zhitar’, V. Pavlenko, E. Arama, T. Shemyakova\",\"doi\":\"10.1109/SMICND.2008.4703391\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Recombination characteristics of ZnIn2S4 single crystals doped with high copper concentration were investigated. The spectra of photoconductivity, spectra of excitation and radiation of luminescence at 20degC are given. Their peculiarities are described and analyzed. Comparison of the spectra allowed to propose the model for recombination processes and the dominating mechanism of radiation transitions for single crystals of this compound. It was shown that these processes are determined by the system of deep levels and by exponentially distributed states.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"229 1\",\"pages\":\"241-244\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703391\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703391","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recombination properties of ZnIn2S4:Cu single crystals
Recombination characteristics of ZnIn2S4 single crystals doped with high copper concentration were investigated. The spectra of photoconductivity, spectra of excitation and radiation of luminescence at 20degC are given. Their peculiarities are described and analyzed. Comparison of the spectra allowed to propose the model for recombination processes and the dominating mechanism of radiation transitions for single crystals of this compound. It was shown that these processes are determined by the system of deep levels and by exponentially distributed states.
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