多量子阱结构中阱放电过程的建模

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI:10.1109/SMICND.2008.4703332

M. Ciurea, V. Iancu, I. Stavarache, A. Lepadatu, E. Rusnac

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引用次数: 0

摘要

本文提出了多量子阱纳米结构中陷阱放电过程的建模方法。讨论了由于CaF2缓冲层而引起的捕集和去捕集现象之间的耦合。分析了隧道电流和位移电流的相对作用。该模型允许确定不能直接测量的疏水阀参数。计算结果与实验数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling of trap discharging processes in Multiple Quantum Well structures

The paper presents the modeling of trap discharging processes in Multiple Quantum Well nanostructures. The coupling between trapping and detrapping phenomena, due to the CaF2 buffer layers is discussed. The relative role of tunneling and displacement currents is also analyzed. The model allows the determination of trap parameters that are not directly measurable. The results are in good agreement with the experimental data.

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2008 IEEE International Conference on Semiconductor Electronics

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