喷雾热解法制备ZnO薄膜

2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI:10.1109/SMICND.2008.4703402

D. Perniu, M. Duţă, D. Catrinoi, C. Toader, M. Gosman, E. Ienei, A. Duţă

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引用次数: 2

摘要

采用喷雾热解沉积的方法制备了未掺杂和掺杂Al、ag的ZnO薄膜。本文提出了用于光电应用的薄膜的最佳沉积参数。少量Al和Ag离子的加入影响了薄膜的结晶度和形貌。实验结果表明，铝和银作为掺杂剂降低了主氧化物ZnO的带隙值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ZnO thin films deposited by spray pyrolysis technique

Thin films of undoped and Al- and Ag-doped ZnO thin films have been obtained by spray pyrolysis deposition. The optimised parameters of deposition for the thin films to be used in optoelectronic applications are presented in the paper. The addition of low amounts of Al and Ag ions influences the film crystallinity and morphology. Based on the experimental results it is concluded that aluminium and silver act as dopants and reduce the band gap value of the host oxide, ZnO.

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来源期刊

2008 IEEE International Conference on Semiconductor Electronics

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