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2008 IEEE International Conference on Semiconductor Electronics最新文献

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Transient surge voltage suppressors and their performance in circuit over-voltage protection 暂态浪涌电压抑制器及其在电路过电压保护中的性能
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703414
V. Obreja
{"title":"Transient surge voltage suppressors and their performance in circuit over-voltage protection","authors":"V. Obreja","doi":"10.1109/SMICND.2008.4703414","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703414","url":null,"abstract":"Semiconductor components from electrical circuits and systems have a maximum permissible working voltage, specified for reliable operation. Short duration over-voltage of amplitude higher than this specified voltage can lead to system failure. Typical electrical characteristics for special components like varistors or silicon transient voltage suppressors, used in the circuit over-voltage protection are shown and analyzed. The advantages and disadvantages are outlined. The varistor type surge voltage suppressors are lower cost devices but with poor protection efficiency. Their operation temperature is limited to 85degC. The silicon avalanche breakdown based devices and thyristor based devices manifest good protection efficiency but at higher cost. Their operation temperature is higher than 100degC. At this time, commercial surge suppressors for efficient over-voltage protection below 5-6 V are not available.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"58 1","pages":"321-324"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76657489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The influence of deep levels on the admittance of MIS structures with sol-gel TiO2 insulator film 深层能级对溶胶-凝胶TiO2绝缘体膜MIS结构导纳的影响
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703390
S. Simeonov, A. Szekeres, I. Minkov, K. Ivanova, M. Gartner, C. Parlog
{"title":"The influence of deep levels on the admittance of MIS structures with sol-gel TiO2 insulator film","authors":"S. Simeonov, A. Szekeres, I. Minkov, K. Ivanova, M. Gartner, C. Parlog","doi":"10.1109/SMICND.2008.4703390","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703390","url":null,"abstract":"The admittance- voltage characteristics of MIS structures with TiO2(La) dielectric films, have been measured in the 100 Hz-100 kHz test voltage frequency range. It has been established that the dielectric constant of these dielectric films increases with the decrease of the test voltage frequency. The conductance of these MIS structures increases with the test voltage frequency in the same 100 Hz-100 kHz frequency range. These admittance measurements are used to estimate the density of deep levels, responsible for observed dependence of the dielectric constant on the test voltage frequency in investigated MIS structures.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"75 1","pages":"237-240"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88199874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 junctions Pb(Zr,Ti)O3-Nb:SrTiO3结的电、铁电及光电性质
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703406
L. Pintilie, I. Pintilie, I. Vrejoiu, M. Alexe
{"title":"Electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 junctions","authors":"L. Pintilie, I. Pintilie, I. Vrejoiu, M. Alexe","doi":"10.1109/SMICND.2008.4703406","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703406","url":null,"abstract":"The electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 (PZT-STON) junctions were investigated on a broad range of temperatures. It was found that the hysteresis loop is strongly asymmetric, due to the asymmetry in the leakage current. The capacitance-voltage characteristic has a butterfly shape although it is also asymmetric because of the different nucleation and compensation conditions at the two interfaces. The junction shows a strong photovoltaic effect in the 200- 500 nm wavelength range as short-circuit currents of the order of nA for an illuminated surface of 0.018 mm2. This makes the PZT-STON junctions attractive for UV optoelectronic applications.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"47 1","pages":"295-298"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84079710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ab initio study of neutral oxygen vacancies in rutile TiO2 金红石型TiO2中中性氧空位的从头算研究
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703393
R. Plugaru, M. Artigas, N. Plugaru
{"title":"Ab initio study of neutral oxygen vacancies in rutile TiO2","authors":"R. Plugaru, M. Artigas, N. Plugaru","doi":"10.1109/SMICND.2008.4703393","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703393","url":null,"abstract":"We present results of ab initio supercell calculations performed in the DFT-L(S)DA framework on rutile TiO2 phase with neutral oxygen vacancies (OVs), in the low defect concentration range (les 6.25 at.%). The different OVs distributions in the supercell allow us to determine the localization and structure of the vacancy-induced states, the effect of vacancy concentration on the occupation numbers, as well as vacancy energetics. The present study benefits of the high accuracy in the total energy and band structure calculations of the full potential method utilized.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"26 1","pages":"249-252"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88031282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Tunelling leakage current characterization of silicon oxide and high-k dielectics for advanced semiconductor devices 先进半导体器件用氧化硅和高k介电体的隧穿漏电流特性
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703426
F. Babarada, R. Plugaru, A. Rusu
{"title":"Tunelling leakage current characterization of silicon oxide and high-k dielectics for advanced semiconductor devices","authors":"F. Babarada, R. Plugaru, A. Rusu","doi":"10.1109/SMICND.2008.4703426","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703426","url":null,"abstract":"The continuum down-scaling lead the field-effect transistors in the nanometre region with devices and structures characterized by high doping drains/ sources and thin insulating layers. When the thickness of the layers attends 2 nm or less, the coupling between the semiconductor channel and the gate canpsilat be neglected. A correct quantum-mechanical model must correct evaluate the channel charge distribution and the leakage current flowing between the gate and the channel through tunnelling. The presented iterative approximation method for calculate the 1D device main electric parameters offer short time computation and was applied to study the thin silicon oxide and high-k dielectrics stacks combination for the silicon devices.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"1 1","pages":"363-366"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83046957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New technologies for microelectronics devices processing by laser locally structural modifications 激光局部结构修饰微电子器件加工新技术
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703421
D. Ulieru, A. Matei, E. Ulieru, A. Tanțău, F. Babarada
{"title":"New technologies for microelectronics devices processing by laser locally structural modifications","authors":"D. Ulieru, A. Matei, E. Ulieru, A. Tanțău, F. Babarada","doi":"10.1109/SMICND.2008.4703421","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703421","url":null,"abstract":"The process model involving the calculation of the laser melted region in which the dopant diffusion occurs has been developed. Experimental results are well described by the proposed model. In this paper after reviewing the principle of our technique, we present the electronic characterization and the modeling these new microdevices and show that they present excellent current voltage linear behavior at usual microelectronics voltages. Furthermore, process modeling bases on the laser induced silicon melted region calculation is introduced and successfully compared to experimental results. The laser trimming applications for microelectronics special components will confirm wide applications range of this new technology.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"5 4 1","pages":"343-346"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80039501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Model for the low frequency electrical relaxation in Si porous 硅多孔中低频电弛豫模型
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703395
A. Dafinei, A. Ioanid, A. Dafinei
{"title":"Model for the low frequency electrical relaxation in Si porous","authors":"A. Dafinei, A. Ioanid, A. Dafinei","doi":"10.1109/SMICND.2008.4703395","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703395","url":null,"abstract":"In an non-homogenous dielectric, in the low frequency range, the polarization properties due to the free charge kinetic modifies as function of the accumulation and redistribution of this space charge on inhomogeneities. The relaxation of these polarization leads to the dispersion of the permittivity and conductivity. We propose a model for the low frequencies conductivity relaxation phenomena in porous Si porous (PS).","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"84 1","pages":"257-260"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83870058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of tin oxide nanobelts/nanoribbons prepared by chemical deposition technology 化学沉积法制备氧化锡纳米带/纳米带的研究
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703404
O. Lupan, L. Chow, G. Chai, A. Schulte, S. Park, H. Heinrich, V. Sontea, V. Trofim, S. Railean
{"title":"Investigation of tin oxide nanobelts/nanoribbons prepared by chemical deposition technology","authors":"O. Lupan, L. Chow, G. Chai, A. Schulte, S. Park, H. Heinrich, V. Sontea, V. Trofim, S. Railean","doi":"10.1109/SMICND.2008.4703404","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703404","url":null,"abstract":"A facile aqueous solution process to fabricate tin oxide nanoarchitectures was successfully developed. The influence of precursors on the morphology of SnO2 is studied. Tin oxide nanobelts/nanoribbons were characterized by X-ray diffraction, micro-Raman spectroscopy, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Possible growth mechanism of tin oxide nanobedlts/nanoribbons is discussed. Their characteristics make it potential candidates for fabrication of new sensors and nanodevices.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"10 1","pages":"287-290"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85610994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and optimization of microwave lumped elements filters using mixed circuital-electromagnetic simulations 基于混合电路-电磁仿真的微波集总元件滤波器设计与优化
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703338
D. Neculoiu, A. Muller, F. Giacomozzi, D. Vasilache, I. Petrini, C. Buiculescu, A. Muller
{"title":"Design and optimization of microwave lumped elements filters using mixed circuital-electromagnetic simulations","authors":"D. Neculoiu, A. Muller, F. Giacomozzi, D. Vasilache, I. Petrini, C. Buiculescu, A. Muller","doi":"10.1109/SMICND.2008.4703338","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703338","url":null,"abstract":"This paper presents the design, fabrication and experimental results of the switchable band-pass lumped elements filters. The design is based on a new optimization approach that integrates mixed circuital and electromagnetic simulations. The use of horizontal internal ports and the connection of external capacitors at circuital level make the optimization procedure very efficient. A very good agreement between measurements and simulations validate the new design approach.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"48 1","pages":"99-102"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85706589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On chip optical signal routing based on self-collimation effect in two-dimensional photonic crystals 基于二维光子晶体自准直效应的芯片光信号路由
2008 IEEE International Conference on Semiconductor Electronics Pub Date : 2008-12-09 DOI: 10.1109/SMICND.2008.4703444
O. Miţă, C. Bostan, P. Schiopu
{"title":"On chip optical signal routing based on self-collimation effect in two-dimensional photonic crystals","authors":"O. Miţă, C. Bostan, P. Schiopu","doi":"10.1109/SMICND.2008.4703444","DOIUrl":"https://doi.org/10.1109/SMICND.2008.4703444","url":null,"abstract":"A non defect waveguide based on self-collimation effect in two-dimensional photonic crystals is presented in this paper. An investigation to determine self-collimation frequency range in square and hexagonal lattice photonic crystals is realized. It is demonstrated the routing of two self-collimated Gaussian beams travelling through a hexagonal photonic crystal, on the same optical layer. Using the unique advantage of allowing self-collimated beams to cross each other without coupling, one can devise structureless interconnects for photonic integrated circuits.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"105 1","pages":"423-426"},"PeriodicalIF":0.0,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80716162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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