Model for the low frequency electrical relaxation in Si porous

A. Dafinei, A. Ioanid, A. Dafinei
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Abstract

In an non-homogenous dielectric, in the low frequency range, the polarization properties due to the free charge kinetic modifies as function of the accumulation and redistribution of this space charge on inhomogeneities. The relaxation of these polarization leads to the dispersion of the permittivity and conductivity. We propose a model for the low frequencies conductivity relaxation phenomena in porous Si porous (PS).
硅多孔中低频电弛豫模型
在非均匀介质中,在低频范围内,由自由电荷动力学引起的极化特性随着该空间电荷在非均匀介质上的积累和再分布而改变。这些极化的弛豫导致介电常数和电导率的色散。我们提出了多孔硅(PS)中低频电导率弛豫现象的模型。
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