{"title":"硅多孔中低频电弛豫模型","authors":"A. Dafinei, A. Ioanid, A. Dafinei","doi":"10.1109/SMICND.2008.4703395","DOIUrl":null,"url":null,"abstract":"In an non-homogenous dielectric, in the low frequency range, the polarization properties due to the free charge kinetic modifies as function of the accumulation and redistribution of this space charge on inhomogeneities. The relaxation of these polarization leads to the dispersion of the permittivity and conductivity. We propose a model for the low frequencies conductivity relaxation phenomena in porous Si porous (PS).","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Model for the low frequency electrical relaxation in Si porous\",\"authors\":\"A. Dafinei, A. Ioanid, A. Dafinei\",\"doi\":\"10.1109/SMICND.2008.4703395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In an non-homogenous dielectric, in the low frequency range, the polarization properties due to the free charge kinetic modifies as function of the accumulation and redistribution of this space charge on inhomogeneities. The relaxation of these polarization leads to the dispersion of the permittivity and conductivity. We propose a model for the low frequencies conductivity relaxation phenomena in porous Si porous (PS).\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Model for the low frequency electrical relaxation in Si porous
In an non-homogenous dielectric, in the low frequency range, the polarization properties due to the free charge kinetic modifies as function of the accumulation and redistribution of this space charge on inhomogeneities. The relaxation of these polarization leads to the dispersion of the permittivity and conductivity. We propose a model for the low frequencies conductivity relaxation phenomena in porous Si porous (PS).
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