New technologies for microelectronics devices processing by laser locally structural modifications

The process model involving the calculation of the laser melted region in which the dopant diffusion occurs has been developed. Experimental results are well described by the proposed model. In this paper after reviewing the principle of our technique, we present the electronic characterization and the modeling these new microdevices and show that they present excellent current voltage linear behavior at usual microelectronics voltages. Furthermore, process modeling bases on the laser induced silicon melted region calculation is introduced and successfully compared to experimental results. The laser trimming applications for microelectronics special components will confirm wide applications range of this new technology.