{"title":"Pb(Zr,Ti)O3-Nb:SrTiO3结的电、铁电及光电性质","authors":"L. Pintilie, I. Pintilie, I. Vrejoiu, M. Alexe","doi":"10.1109/SMICND.2008.4703406","DOIUrl":null,"url":null,"abstract":"The electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 (PZT-STON) junctions were investigated on a broad range of temperatures. It was found that the hysteresis loop is strongly asymmetric, due to the asymmetry in the leakage current. The capacitance-voltage characteristic has a butterfly shape although it is also asymmetric because of the different nucleation and compensation conditions at the two interfaces. The junction shows a strong photovoltaic effect in the 200- 500 nm wavelength range as short-circuit currents of the order of nA for an illuminated surface of 0.018 mm2. This makes the PZT-STON junctions attractive for UV optoelectronic applications.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"47 1","pages":"295-298"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 junctions\",\"authors\":\"L. Pintilie, I. Pintilie, I. Vrejoiu, M. Alexe\",\"doi\":\"10.1109/SMICND.2008.4703406\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 (PZT-STON) junctions were investigated on a broad range of temperatures. It was found that the hysteresis loop is strongly asymmetric, due to the asymmetry in the leakage current. The capacitance-voltage characteristic has a butterfly shape although it is also asymmetric because of the different nucleation and compensation conditions at the two interfaces. The junction shows a strong photovoltaic effect in the 200- 500 nm wavelength range as short-circuit currents of the order of nA for an illuminated surface of 0.018 mm2. This makes the PZT-STON junctions attractive for UV optoelectronic applications.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"47 1\",\"pages\":\"295-298\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703406\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703406","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 junctions
The electric, ferroelectric and photoelectric properties of Pb(Zr,Ti)O3-Nb:SrTiO3 (PZT-STON) junctions were investigated on a broad range of temperatures. It was found that the hysteresis loop is strongly asymmetric, due to the asymmetry in the leakage current. The capacitance-voltage characteristic has a butterfly shape although it is also asymmetric because of the different nucleation and compensation conditions at the two interfaces. The junction shows a strong photovoltaic effect in the 200- 500 nm wavelength range as short-circuit currents of the order of nA for an illuminated surface of 0.018 mm2. This makes the PZT-STON junctions attractive for UV optoelectronic applications.
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