CMOS温度传感器-概念,现状和前景

F. Udrea, S. Santra, J. Gardner
{"title":"CMOS温度传感器-概念,现状和前景","authors":"F. Udrea, S. Santra, J. Gardner","doi":"10.1109/SMICND.2008.4703322","DOIUrl":null,"url":null,"abstract":"The paper reviews the state-of-the-art in IC temperature sensors. It starts by revisiting the semiconductor theory of thermodiodes and thermotransistors, continues with the introduction of IC temperature sensors, the concepts of VPTAT - voltage proportional to absolute temperature and IPTAT (current proportional to absolute temperature) and discusses the possibility of use of parasitic bipolar transistors as temperature sensors in pure CMOS technology. The next section demonstrates the very high operating temperature of a dasiaspecialpsila thermodiode, well beyond the typical IC silicon junction temperature. This is achieved with a diode embedded in an SOI CMOS micro-hotplate. A discussion on the temperature limits of integrated temperature sensors is also given. The final section outlines the prospects of IC temperature sensors.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"29 1","pages":"31-40"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"39","resultStr":"{\"title\":\"CMOS temperature sensors - concepts, state-of-the-art and prospects\",\"authors\":\"F. Udrea, S. Santra, J. Gardner\",\"doi\":\"10.1109/SMICND.2008.4703322\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper reviews the state-of-the-art in IC temperature sensors. It starts by revisiting the semiconductor theory of thermodiodes and thermotransistors, continues with the introduction of IC temperature sensors, the concepts of VPTAT - voltage proportional to absolute temperature and IPTAT (current proportional to absolute temperature) and discusses the possibility of use of parasitic bipolar transistors as temperature sensors in pure CMOS technology. The next section demonstrates the very high operating temperature of a dasiaspecialpsila thermodiode, well beyond the typical IC silicon junction temperature. This is achieved with a diode embedded in an SOI CMOS micro-hotplate. A discussion on the temperature limits of integrated temperature sensors is also given. The final section outlines the prospects of IC temperature sensors.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"29 1\",\"pages\":\"31-40\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"39\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703322\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703322","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 39

摘要

本文综述了集成电路温度传感器的最新进展。它首先回顾了热敏二极管和热晶体管的半导体理论,接着介绍了IC温度传感器,VPTAT(电压与绝对温度成正比)和IPTAT(电流与绝对温度成正比)的概念,并讨论了在纯CMOS技术中使用寄生双极晶体管作为温度传感器的可能性。下一节演示了一种特殊的硅热模的非常高的工作温度,远远超出了典型的IC硅结温度。这是通过嵌入在SOI CMOS微热板中的二极管实现的。对集成温度传感器的温度极限进行了讨论。最后一节概述了IC温度传感器的发展前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS temperature sensors - concepts, state-of-the-art and prospects
The paper reviews the state-of-the-art in IC temperature sensors. It starts by revisiting the semiconductor theory of thermodiodes and thermotransistors, continues with the introduction of IC temperature sensors, the concepts of VPTAT - voltage proportional to absolute temperature and IPTAT (current proportional to absolute temperature) and discusses the possibility of use of parasitic bipolar transistors as temperature sensors in pure CMOS technology. The next section demonstrates the very high operating temperature of a dasiaspecialpsila thermodiode, well beyond the typical IC silicon junction temperature. This is achieved with a diode embedded in an SOI CMOS micro-hotplate. A discussion on the temperature limits of integrated temperature sensors is also given. The final section outlines the prospects of IC temperature sensors.
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