Electronic Materials Letters最新文献_第4页

Counteracting Effect of Sn Grain Orientation on Current Crowding in Electromigration Failures of Solder Joints 锡晶粒取向对焊点电迁移失效中电流拥挤的抵消作用

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-11-30 DOI: 10.1007/s13391-024-00535-7

Yifan Yao, Zhunan Lu, Yuxuan An, K. N. Tu, Yingxia Liu

引用次数: 0

Sputtered Amorphous Silicon Thin Films Exhibiting Low Argon Working Gas Content and High Film Density 具有低氩气含量和高薄膜密度的溅射非晶硅薄膜

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-11-28 DOI: 10.1007/s13391-024-00532-w

Choong-Heui Chung

{"title":"Sputtered Amorphous Silicon Thin Films Exhibiting Low Argon Working Gas Content and High Film Density","authors":"Choong-Heui Chung","doi":"10.1007/s13391-024-00532-w","DOIUrl":"10.1007/s13391-024-00532-w","url":null,"abstract":"<div><p>To achieve high-quality sputtered amorphous silicon (a-Si) thin films with low argon (Ar) working gas atom content and high film density, the effects of <span>(:{P}_{Ar}{D}_{TS})</span> on Ar gas content and film density is investigated. Here, <span>(:{P}_{Ar})</span> is Ar working pressure and <span>(:{D}_{TS})</span> is target-to-substrate. The findings from this work indicate that the Ar gas content in the films primarily arises from highly energetic reflected Ar ions that bombard growing a-Si thin films at low <span>(:{P}_{Ar}{D}_{TS}:)</span> values (< 50 Pa·mm). As <span>(:{P}_{Ar}{D}_{TS})</span> increases, a monotonic decrease in film density is observed. This results well correlates with the declining average energy of sputtered silicon atoms reaching the substrate. Optimal conditions for fabricating sputtered a-Si thin films with both low Ar content and high film density were identified within the <span>(:{P}_{Ar}{D}_{TS})</span> range of 30–40 Pa·mm. This research could provide valuable insights for researchers seeking to optimize the balance between low working gas content and high film density in sputtered thin films.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"49 - 55"},"PeriodicalIF":2.1,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Conductive Carbon Fabric from Waste Viscose for Electrothermal and Photothermal Management 用于电热和光热管理的废粘胶导电碳织物

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-11-27 DOI: 10.1007/s13391-024-00533-9

Mengjia Wang, Riquan Zheng, Mengmeng Jiang, Xiaoqiang Li

{"title":"Conductive Carbon Fabric from Waste Viscose for Electrothermal and Photothermal Management","authors":"Mengjia Wang, Riquan Zheng, Mengmeng Jiang, Xiaoqiang Li","doi":"10.1007/s13391-024-00533-9","DOIUrl":"10.1007/s13391-024-00533-9","url":null,"abstract":"<div><p>In recent years, there has been increasing interest in developing solutions to maintain human body temperature in extremely cold environments. Wearable electrically heated fabrics have been extensively researched, however, their complex preparation processes and associated environmental concerns hindered their widespread adoption. To address these challenges, this study focuses on develop a novel materials, which suitable for wearable applications with the low energy consumption and environmentally friendly. In this work, a simple and eco-friendly preparation method was proposed. The viscose-based carbon fabric (VCF) was prepared using viscose fabric as the raw material by means of high-temperature carbonization. The VCF exhibits excellent flexible, good electrical conductivity and remarkable photothermal conversion properties as well. VCF can absorb sunlight for heating and also has electric heating properties. Due to its outstanding flexible and thermal capability, the VCF was applied to heat human body under solar radiation; furthermore, the high electric heating efficiency makes it suitable for a wide range of applications, including indoor heating or de-icing treatment. With its strong potential for wearable applications, viscose-based carbon fabric presents a promising, energy-efficient solution for all-day personal thermal management. This research offers a broad and sustainable approach to developing advanced thermal management fabrics for diverse environmental conditions. </p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"56 - 69"},"PeriodicalIF":2.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved Electrochemical Plating for Void-Free Copper Line in ULSI Interconnect ULSI互连中无空隙铜线的改进电化学镀

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-11-26 DOI: 10.1007/s13391-024-00530-y

Qiongyang Zhuang, Xiaofeng Jia, Jiangbing Yan, Jinde Lu

{"title":"Improved Electrochemical Plating for Void-Free Copper Line in ULSI Interconnect","authors":"Qiongyang Zhuang, Xiaofeng Jia, Jiangbing Yan, Jinde Lu","doi":"10.1007/s13391-024-00530-y","DOIUrl":"10.1007/s13391-024-00530-y","url":null,"abstract":"<div><p>Being the fundamental process of advanced back-end-of-line (BEOL) interconnects, the performance of copper (Cu) electrochemical plating (ECP) affects the resistivity of metal lines and plays a crucial role in RC delay and reliability concerns. A great deal of attention has been focused on reducing the Cu voids, but few reports concentrate on the initial period of ECP, especially when the wafer is immersed in the electrolyte. By optimizing the wafer immersion conditions, I achieved a defect image quantification reduction from a maximum of 88ea to a minimum of 0ea, indicating that a void-free Cu line was realized through a standard plating process, thanks to the reduced surface potential difference during the initial phase. As we develop advanced technology nodes such as below the 7 nm technology node, the higher requirement for the RC delay and reliability performance, this work has good potential applications below the 7 nm technology node, because it provides a promising solution to reduce Cu line voids and can be beneficial to alleviate the RC delay and enhance the reliability in back end of line (BEOL) interconnection.</p><h3>Graphic Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"41 - 48"},"PeriodicalIF":2.1,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Sensitive and Selective Room Temperature NO2 Gas Sensor Based on 3D BiFeO3 − x Microflowers 基于3D BiFeO3−x微花的高灵敏度和选择性室温NO2气体传感器

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-11-23 DOI: 10.1007/s13391-024-00534-8

Wei Wang, Wei Jiang, Lei Zhuang

{"title":"Highly Sensitive and Selective Room Temperature NO2 Gas Sensor Based on 3D BiFeO3 − x Microflowers","authors":"Wei Wang, Wei Jiang, Lei Zhuang","doi":"10.1007/s13391-024-00534-8","DOIUrl":"10.1007/s13391-024-00534-8","url":null,"abstract":"<div><p>High-performance chemresistive gas sensors operating at low or room temperatures are of great potential for practical applications. In this work, the oxygen vacancies-rich BiFeO<sub>3 − x</sub> microflowers were synthesized using a facile solvothermal route. The characterized results showed that BiFeO<sub>3 − x</sub> was assembled with nanosheets, and displayed a diameter of around 1 μm. The as-fabricated BiFeO<sub>3 − x</sub> gas sensor exhibited fine sensing properties towards 0.5-5 ppm NO<sub>2</sub> under ~ 23 <sup>o</sup>C, including a response of 2.92 to 5 ppm NO<sub>2</sub>, and it also maintained a response of 1.05 towards 50 ppb NO<sub>2</sub>. The gas sensor demonstrated a theoretical limit of detection as low as 273 ppb, rapid response/recovery speed (22/69 s), good selectivity, and repeatability. The improved NO<sub>2</sub> sensing mechanism of enriched oxygen vacancies-BiFeO<sub>3 − x</sub> was investigated regarding its micro-nano structure and abundant oxygen species.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"102 - 110"},"PeriodicalIF":2.1,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrical Performance and Stability Improvement of In2O3 Thin-Film Transistors Engendered by Oxygen-Free Focused Plasma Treatment 无氧聚焦等离子体处理提高In2O3薄膜晶体管的电性能和稳定性

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-11-22 DOI: 10.1007/s13391-024-00531-x

Han-Lin Zhao, Sung-Jin Kim

{"title":"Electrical Performance and Stability Improvement of In2O3 Thin-Film Transistors Engendered by Oxygen-Free Focused Plasma Treatment","authors":"Han-Lin Zhao, Sung-Jin Kim","doi":"10.1007/s13391-024-00531-x","DOIUrl":"10.1007/s13391-024-00531-x","url":null,"abstract":"<div><p>In the last decade, interest in solution-processed transparent oxide semiconductors has been increasing. Specifically, indium oxide (In<sub>2</sub>O<sub>3</sub>) films have been researched due to their processability using aqueous solutions without organic additives. However, the film quality of as-deposited layers might be suboptimal, which requires some type of post-deposition treatment. In this work, the effect of the treatment by a focused plasma (FP) under both N<sub>2</sub> (FP-N) and N<sub>2</sub>:H<sub>2</sub> (FP-H) gases on In<sub>2</sub>O<sub>3</sub> thin-film transistors (TFTs) is explored. The In<sub>2</sub>O<sub>3</sub> TFTs with optimized device performance were fabricated using a volatile nitrate precursor at an annealing temperature of 250 °C. The FP-N In<sub>2</sub>O<sub>3</sub> devices achieved saturation mobility (µ<sub>sat</sub>) of 3.83 ± 0.14 cm<sup>2</sup>/Vs, and the threshold voltage was about 3 V. The FP-H devices with a µ<sub>sat</sub> of 2.56 ± 0.15 cm<sup>2</sup>/Vs, on/off current ratio of 4.3 × 10<sup>6</sup>, exhibited stable electrical characteristics with improved gate bias stress stability and time-dependent environmental stability. These results demonstrate that FP treatment of solution processed In<sub>2</sub>O<sub>3</sub> semiconductors effectively enhances carrier transport performance and improves bias stability.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div><div><p>Han-Lin Zhao et al., Indium oxide semiconductors prepared based on solution-processes have many advantages, such as the ability to be prepared at low temperatures, but the performance of the prepared devices is poor. This work has shown that the performance of the devices can be improved by subjecting the devices to an oxygen-free focused plasma treatment for different gas</p></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"145 - 153"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143570963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase Formation Behavior and Thermoelectric Transport Properties of Solid Solution Composition Between SnTe and InTe SnTe和InTe固溶组分的相形成行为和热电输运性质

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-11-16 DOI: 10.1007/s13391-024-00529-5

BeomSoo Kim, TaeWan Kim, Seungchan Seon, Okmin Park, Hyungyu Cho, Weon Ho Shin, Sang-il Kim

{"title":"Phase Formation Behavior and Thermoelectric Transport Properties of Solid Solution Composition Between SnTe and InTe","authors":"BeomSoo Kim, TaeWan Kim, Seungchan Seon, Okmin Park, Hyungyu Cho, Weon Ho Shin, Sang-il Kim","doi":"10.1007/s13391-024-00529-5","DOIUrl":"10.1007/s13391-024-00529-5","url":null,"abstract":"<div><p>Alloys based on SnTe have been widely studied for their eco-friendly characteristics and good electrical performance in the high-temperature range above 600 K. In this study, SnTe-InTe solid solution alloy compositions of Sn<sub>1 − x</sub>In<sub>x</sub>Te (<i>x</i> = 0, 0.2, 0.4, 0.6, 0.8, and 1.0) were investigated for their phase formation behavior and thermoelectric properties. A single cubic SnTe phase was formed in <i>x</i> ≤ 0.4 samples, while <i>x</i> = 0.6 and 0.8 samples formed multi-phase with a tetragonal InTe phase. The carrier mobility gradually decreased with increasing <i>x</i> in the single cubic phase region (<i>x</i> = 0-0.4), and a drastic reduction of 58% for <i>x</i> = 0.2 and 82% for <i>x</i> = 0.4, causing <i>S</i> and <i>σ</i> to decrease simultaneously compared to that of the pristine SnTe. Thus, the power factor gradually reduced to 0.06 mW/mK<sup>2</sup> for <i>x</i> = 0.4 compared to 1.57 mW/mK<sup>2</sup> for the pristine sample, as confirmed by the weighted mobility reduction behavior. The lattice thermal conductivity showed a gradual decrease in the simple cubic phase region, owing to the additional point defects formed by In substitution of Sn sites. Consequently, <i>zT</i> gradually decreased from 0.31 for the pristine to 0.02 for <i>x</i> = 0.4 sample due to the degradation of carrier transport properties, specifically Hall mobility, outweighing the total thermal conductivity reduction. The maximum <i>zT</i> value of 0.50 at 750 K was observed for InTe (<i>x</i> = 1.0). Additional analysis using the single-parabolic-band model indicated that <i>zT</i> enhancement through carrier concentration optimization was not feasible for the alloy samples.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"207 - 215"},"PeriodicalIF":2.1,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase-Separated 2D PbBiI5 Halide Memristor for Neuromorphic Computing 用于神经形态计算的2D相分离PbBiI5卤化物记忆电阻器

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-11-08 DOI: 10.1007/s13391-024-00528-6

Hee Joon Jung

{"title":"Phase-Separated 2D PbBiI5 Halide Memristor for Neuromorphic Computing","authors":"Hee Joon Jung","doi":"10.1007/s13391-024-00528-6","DOIUrl":"10.1007/s13391-024-00528-6","url":null,"abstract":"<div><p>Here, we report on the two-dimensional (2D) (PbI<sub>2</sub>)<sub>0.5</sub>(BiI<sub>3</sub>)<sub>0.5</sub> mixed halide memristor, which exhibits nonlinear conductance that surpasses the properties of the simple combination of PbI<sub>2</sub> and BiI<sub>3</sub> binaries. This 2D system is phase-separated into Bi-rich and Bi-poor nanoscale domains rather than forming a single homogeneous phase. Phase boundaries, predominantly featuring iodine vacancies or stacking faults, induce a novel memristive behavior along the c-axis, driven by ion transport perpendicular to the layered structure, making it promising for resistive switching memory (RRAM) applications. In-situ biasing transmission electron microscopy (TEM) reveals the formation of iodine filaments under sweep bias, with ion migration occurring mainly through phase boundaries in the out-of-plane direction. Direct observation of reversible filament formation in this phase-separated iodide system provides new insights into defect-mediated ion migration, resulting in nonlinear resistive switching, with potential applications in neuromorphic computing. The ability to track heavy anions like iodine in the halide memristor provides valuable insights into the similar correlation mechanisms between ion migration and defects in oxide or sulfide-based memristors. This capability could shed light on how defects influence ion transport in a broader range of materials, enhancing the development of resistive switching devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"32 - 40"},"PeriodicalIF":2.1,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Thermoelectric Properties of FeSe2 Alloys by Lattice Thermal Conductivity Reduction by Cl Doping Cl掺杂降低FeSe2合金晶格热导率增强其热电性能

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-11-07 DOI: 10.1007/s13391-024-00527-7

BeomSoo Kim, Hyungyu Cho, Okmin Park, Seungchan Seon, Sang-il Kim

{"title":"Enhanced Thermoelectric Properties of FeSe2 Alloys by Lattice Thermal Conductivity Reduction by Cl Doping","authors":"BeomSoo Kim, Hyungyu Cho, Okmin Park, Seungchan Seon, Sang-il Kim","doi":"10.1007/s13391-024-00527-7","DOIUrl":"10.1007/s13391-024-00527-7","url":null,"abstract":"<div><p>Metal chalcogenides are widely studied as thermoelectric materials due to their finely tunable electronic transport properties over a wide temperature range. FeSe<sub>2</sub> has recently been considered a promising thermoelectric material with investigations focusing on restraining bipolar behavior through doping. In this study, a series of Cl-doped FeSe<sub>2</sub> compositions, a series of FeSe<sub>2 − x</sub>Cl<sub>x</sub> (<i>x</i> = 0, 0.01, 0.025, and 0.05) compositions, were synthesized to investigate the influence of Cl doping. While the gradually decreasing lattice parameters with doping content <i>x</i> suggests successful doping up to <i>x</i> = 0.05, the hole concentration slightly decreased owing to electrons generated by the Cl doping. Nevertheless, the electrical conductivity and Seebeck coefficient show no systematic change with <i>x</i> owing to very low electron generating efficiency, and no distinctive enhancement of power factor is seen for the doped samples. On the other hand, the lattice thermal conductivity gradually and significantly decreased with <i>x</i> from 9.2 W/mK to 6.3 W/mK for <i>x</i> = 0.05 by 32% at 300 K, which is originated from the effective additional phonon scattering due to the difference in mass (55%) and size (9%) between Se<sup>2−</sup> and Cl<sup>−</sup> ions. Consequently, a thermoelectric figure of merit is increased to 0.073 from 0.057 at 600 K for <i>x</i> = 0.05.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"79 - 86"},"PeriodicalIF":2.1,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Rapid Thermal Annealing under O2 Ambient to Recover the Deterioration by Gamma-Ray Irradiation in a-IGZO TFTs O2环境下快速热退火恢复γ射线辐照下a-IGZO tft的劣化

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-10-15 DOI: 10.1007/s13391-024-00526-8

Minah Park, Jaewook Yoo, Hongseung Lee, Hyeonjun Song, Soyeon Kim, Seongbin Lim, Seohyeon Park, Jo Hak Jeong, Bongjoong Kim, Kiyoung Lee, Yoon Kyeung Lee, Keun Heo, Jiseok Kwon, Hagyoul Bae

{"title":"Rapid Thermal Annealing under O2 Ambient to Recover the Deterioration by Gamma-Ray Irradiation in a-IGZO TFTs","authors":"Minah Park, Jaewook Yoo, Hongseung Lee, Hyeonjun Song, Soyeon Kim, Seongbin Lim, Seohyeon Park, Jo Hak Jeong, Bongjoong Kim, Kiyoung Lee, Yoon Kyeung Lee, Keun Heo, Jiseok Kwon, Hagyoul Bae","doi":"10.1007/s13391-024-00526-8","DOIUrl":"10.1007/s13391-024-00526-8","url":null,"abstract":"<div><p>Amorphous indium-gallium-zinc-oxide (a-IGZO) has been attracting great attention as a channel material for dynamic random access memory (DRAM) cell transistors due to its superior characteristics including low leakage current, large area deposition, and back-end-of-line (BEOL) compatibility. It should be clearly taken into account that DRAM will also be used in harsh environments such as military surveillance, aerospace, and nuclear power plants. Especially, these situations can cause inevitable and persistent degradation in long-term operations. When the a-IGZO thin film transistors (TFTs) were irradiated by gamma-ray with total doses of 500 Gy, threshold voltage (<i>V</i><sub>T</sub>) was negatively shifted and hysteresis (delta of <i>V</i><sub>T</sub> between forward and backward sweeps) was increased by creating a positive charge in gate insulator. The extracted density-of-states (DOS) and fitted model were employed to investigate the behavior of oxygen vacancy (<i>V</i><sub>O</sub>) in a-IGZO thin film. Electrical performance degraded by gamma-ray irradiation such as changes in <i>V</i><sub>T</sub>, border trap, tail acceptor-like states (<i>g</i><sub>TA</sub>(<i>E</i>)), and shallow donor-like states (<i>g</i><sub>SD</sub>(<i>E</i>)) were recovered through rapid thermal annealing (RTA) under the O<sub>2</sub> ambient.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"111 - 118"},"PeriodicalIF":2.1,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0