Electronic Materials Letters最新文献_第4页

Intrinsic Transport Properties of Si-Doped In0.53Ga0.47As Revealed by Variable-Temperature Parallel Dipole Line Hall Measurements 变温平行偶极线霍尔测量揭示了si掺杂in0.53 ga0.47的本征输运性质

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-24 DOI: 10.1007/s13391-025-00615-2

Chaeyoun Kim, Yunsu Jang, Hyun S. Kum, Byungha Shin

{"title":"Intrinsic Transport Properties of Si-Doped In0.53Ga0.47As Revealed by Variable-Temperature Parallel Dipole Line Hall Measurements","authors":"Chaeyoun Kim, Yunsu Jang, Hyun S. Kum, Byungha Shin","doi":"10.1007/s13391-025-00615-2","DOIUrl":"10.1007/s13391-025-00615-2","url":null,"abstract":"<div><p>Indium gallium arsenide (InGaAs) is a III–V compound semiconductor with high electron mobility and a narrow bandgap, widely employed in high-speed electronic and optoelectronic devices. However, the intrinsic transport properties of InGaAs, particularly the quantitative understanding of dopant ionization and scattering mechanisms, remain insufficiently explored. In this study, we employed a rotating parallel dipole line (PDL) magnetic system in combination with a Hall bar geometry to investigate the transport properties of Si-doped In<sub>0.53</sub>Ga<sub>0.47</sub>As thin films over the temperature range of 170–340 K. The measured mobility exhibited a temperature dependence of µ ∼ T<sup>− 0.94</sup>, confirming phonon-dominated scattering, while the carrier concentration increased with temperature due to donor freeze-out behavior. An Arrhenius analysis yielded a donor activation energy of approximately 6.8 meV, corresponding to a shallow Si donor level and showing good agreement with theoretical predictions. These findings provide direct insight into the intrinsic transport characteristics of In<sub>0.53</sub>Ga<sub>0.47</sub>As and offer valuable reference data for the future design of high-speed electronic and optoelectronic devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"187 - 193"},"PeriodicalIF":2.6,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00615-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147341942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Doping and Passivation Effects in Transition Metal Dichalcogenides via HfO2 Thin Film Deposition HfO2薄膜沉积过渡金属二硫族化合物的掺杂和钝化效应

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-22 DOI: 10.1007/s13391-025-00612-5

Yoona Hwang, Jeongbin Lee, Hojun Kim, Boyun Choi, Seongho Kim, Nari Jeon, Jihun Mun, Hyeong-U Kim, Min Sup Choi

{"title":"Doping and Passivation Effects in Transition Metal Dichalcogenides via HfO2 Thin Film Deposition","authors":"Yoona Hwang, Jeongbin Lee, Hojun Kim, Boyun Choi, Seongho Kim, Nari Jeon, Jihun Mun, Hyeong-U Kim, Min Sup Choi","doi":"10.1007/s13391-025-00612-5","DOIUrl":"10.1007/s13391-025-00612-5","url":null,"abstract":"<p>Two-dimensional (2D) materials, due to their atomically thin structure, are highly susceptible to environmental degradation such as oxidation and moisture absorption. These effects can significantly reduce performance and stability, making surface passivation a critical requirement for practical applications. In this work, we investigate the effects of high-k hafnium dioxide (HfO<sub>2</sub>) dielectric deposited by atomic layer deposition on transition metal dichalcogenides (TMDs), including MoTe<sub>2</sub>, MoS<sub>2</sub>, and WSe<sub>2</sub>. To enable uniform dielectric growth and interfacial bonding, oxygen plasma pre-treatments are applied to form reactive sites prior to deposition. Atomic force microscopy confirmed that the surface roughness of HfO<sub>2</sub> decreases with longer plasma treatment, indicating improved nucleation and conformal coverage on the TMDs surface. Electrical measurements of back-gated field-effect transistors demonstrate a clear dependence of doping behavior on HfO<sub>2</sub> thickness. In thicker films, electrons supplied from oxygen vacancies within HfO<sub>2</sub> to the TMDs channel increases. Additionally, electrons are further induced into the channel by the positive fixed charge, resulting in strong n-type doping effects for thicker HfO<sub>2</sub> layers, as evidenced by the enhanced n-type on-state current. In contrast, devices with thinner HfO<sub>2</sub> films exhibit weaker n-type doping effect or even p-type behavior, likely due to the dominant influence of plasma-induced surface modifications. These results indicate the importance of optimizing both plasma treatment conditions and dielectric thickness to achieve desirable doping and passivation effects. Overall, this study presents a viable strategy for controlled the integration of high-k dielectrics with 2D semiconductors, contributing to the advancement of stable, scalable, and high-performance 2D electronic devices.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"122 - 131"},"PeriodicalIF":2.6,"publicationDate":"2025-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147341166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

All-Printing Based, Capacitive Pressure Sensors on Paper 全印刷，电容式压力传感器在纸上

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-22 DOI: 10.1007/s13391-025-00609-0

Youngjun Cho, Heeyoung Kwack, Taehoon Kim, Kilsoo Lee, Gwangmook Kim, Donyoung Kang, Hyungsuk Lee, Wooyoung Shim

{"title":"All-Printing Based, Capacitive Pressure Sensors on Paper","authors":"Youngjun Cho, Heeyoung Kwack, Taehoon Kim, Kilsoo Lee, Gwangmook Kim, Donyoung Kang, Hyungsuk Lee, Wooyoung Shim","doi":"10.1007/s13391-025-00609-0","DOIUrl":"10.1007/s13391-025-00609-0","url":null,"abstract":"<div><p>A fully printed, flexible capacitive pressure sensor was developed using standard desktop inkjet and laser printers on paper. The device consists of printed silver nanoparticle electrodes and a toner–silica nanoparticle composite dielectric layer. A unique microisland-like dielectric structure is formed during laser printing due to heterogeneous particle mixing and selective thermal fusion, resulting in rough surfaces with embedded air gaps. This morphology enhances sensitivity and accelerates response by allowing partial interlocking and compression under applied pressure. The sensor achieves a high sensitivity of 0.08 kPa<sup>−1</sup> in the low-pressure range (< 30 kPa), fast response and recovery times (~ 50 ms), and maintains mechanical durability over 2000 loading cycles. A 144-pixel sensor array demonstrates scalability, and multifunctional input applications are enabled, including pressure-sensitive trackpads and keyboards where soft and hard touches correspond to distinct commands. This all-printing fabrication approach eliminates the need for microfabrication or complex post-processing, providing a cost-effective, scalable, and versatile method for flexible electronics. The printed pressure sensors offer a promising solution for next-generation human–machine interfaces and customizable paper-based electronic devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><img></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"179 - 186"},"PeriodicalIF":2.6,"publicationDate":"2025-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147341159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Temperature Fluorescence Characteristics of YPO4: Tb3+,Ce3+ Nanophosphors and their Applications in Fingerprint Detection YPO4: Tb3+，Ce3+纳米荧光粉的高温荧光特性及其在指纹检测中的应用

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-18 DOI: 10.1007/s13391-025-00613-4

Jinxiu Wu, Baolong Wu, Qianqian Zhang, Shengquan Wang, Zhaogang Liu, Yanhong Hu, Xiaowei Zhang, Dechao Li

{"title":"High Temperature Fluorescence Characteristics of YPO4: Tb3+,Ce3+ Nanophosphors and their Applications in Fingerprint Detection","authors":"Jinxiu Wu, Baolong Wu, Qianqian Zhang, Shengquan Wang, Zhaogang Liu, Yanhong Hu, Xiaowei Zhang, Dechao Li","doi":"10.1007/s13391-025-00613-4","DOIUrl":"10.1007/s13391-025-00613-4","url":null,"abstract":"<div><p>YPO<sub>4</sub> nanophosphors doped with Tb<sup>3+</sup>, Ce<sup>3+</sup>, and co-doped with Tb<sup>3+</sup>/Ce<sup>3+</sup> were synthesized via a hydrothermal method, and the effects of rare-earth doping on their structural and optical properties were comprehensively examined. A combination of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, along with first-principles calculations, was used to investigate the crystal structure and electronic properties. The optimal doping concentrations for Tb<sup>3+</sup> and Ce<sup>3+</sup> were determined to be 13% and 1%, respectively. Higher doping levels led to concentration quenching attributed to electric dipole–dipole interactions. Theoretical calculations confirmed that YPO<sub>4</sub> possesses a direct bandgap of 5.88 eV. Energy transfer between Ce<sup>3+</sup> and Tb<sup>3+</sup> ions occurs primarily through an electric dipole–electric quadrupole mechanism, with a transfer efficiency reaching 50%. The co-doped YPO<sub>4</sub>:Tb<sup>3+</sup>,Ce<sup>3+</sup> exhibited excellent thermal stability, highlighting its potential for applications in high-temperature fluorescence thermometry and fingerprint recognition. This work provides both theoretical insights and experimental support for advancing rare-earth-doped nanophosphors in anti-counterfeiting and biometric technologies.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"166 - 178"},"PeriodicalIF":2.6,"publicationDate":"2025-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147340562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fracture Toughness Analysis of Sputtered SiNx Thin Films by Energy-Based Nanoindentation Method 用能量基纳米压痕法分析溅射SiNx薄膜的断裂韧性

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-15 DOI: 10.1007/s13391-025-00600-9

In Hyeok Yeo, Yun Taek Park, Hee Jin Kim, Dong Ryul Lee, Sung Ho Lee, Seung Min Han

{"title":"Fracture Toughness Analysis of Sputtered SiNx Thin Films by Energy-Based Nanoindentation Method","authors":"In Hyeok Yeo, Yun Taek Park, Hee Jin Kim, Dong Ryul Lee, Sung Ho Lee, Seung Min Han","doi":"10.1007/s13391-025-00600-9","DOIUrl":"10.1007/s13391-025-00600-9","url":null,"abstract":"<div><p>Fracture of SiN<sub>x</sub> layers within a semiconductor device can cause detrimental reliability issues, and measurement of fracture toughness is key in addressing this limitation. In this study, the fracture toughness of sputtered amorphous SiN<sub>x</sub> thin film was quantitatively evaluated using an energy-based nanoindentation method. Analysis of crack morphologies as a function of maximum indentation load revealed a sequential fracture process in 970 nm-thick SiN<sub>x</sub> film, consisting of delamination, buckling, and subsequent ring crack formation. The initiation of ring crack formation induced distinct pop-in event in the load–depth curves, which corresponded to an abrupt jump in the irreversible work (<span>(:{W}_{irr})</span>)–maximum load (<span>(:{P}_{max})</span>) plot. The energy released during ring crack formation was quantified from the difference in <span>(:{W}_{irr})</span> with and without ring crack formation at identical maximum load. The calculated fracture toughness was in agreement with expectations with a value of <span>(:6.83:MPasqrt{m})</span>, which is indicative of high reliability of the energy-based method analysis. In contrast, the 94 nm-thick SiN<sub>x</sub> film exhibited no significant interfacial delamination under increasing indentation loads. Instead, radial crack propagation through film to substrate and irregular chippings were observed, highlighting the limitations of applying the energy-based method in such thin films. This work demonstrates both the applicability and the thickness-dependent limitations of the energy-based fracture toughness measurement for thin films, providing essential insights for optimizing process parameters to ensure reliability in semiconductor devices with thin coatings.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"92 - 101"},"PeriodicalIF":2.6,"publicationDate":"2025-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00600-9.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Sensitive and Robust Fiber Strain Sensor via Multiple Coating 基于多重涂层的高灵敏度和鲁棒性光纤应变传感器

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-11 DOI: 10.1007/s13391-025-00608-1

Kyusoon Pak, Yunseon Lee, Je Hyeong Kim, Minu Kim, Joo Yong Sim

{"title":"Highly Sensitive and Robust Fiber Strain Sensor via Multiple Coating","authors":"Kyusoon Pak, Yunseon Lee, Je Hyeong Kim, Minu Kim, Joo Yong Sim","doi":"10.1007/s13391-025-00608-1","DOIUrl":"10.1007/s13391-025-00608-1","url":null,"abstract":"<div><p>We report a highly sensitive and durable fiber-type strain sensor (SCDC) fabricated via scalable dip-coating method using a styrene–isoprene–styrene (SIS)-modified multi-walled carbon nanotube (MWCNT) dispersion, stabilized with poly(3-dodecylthiophene) (P3DDT) to ensure uniform coating and prevent CNT aggregation. By optimizing the number of dip-coating cycles, five iterations were identified as ideal, resulting in a wide strain range of 54.7%, high linearity (R<sup>2</sup> = 0.972), and a stable gauge factor of 6.69. The sensor demonstrates excellent mechanical durability, with a consistent resistance response after 1,000 cycles under 30% strain and a low hysteresis ratio of 13.76%. When integrated into a wearable sleeve, the sensor reliably captured elbow motion with clear signal differentiation. This simple yet effective dip-coating strategy enables seamless integration of strain sensors into textiles, maintaining mechanical compliance without additional post-processing—paving the way for practical, garment-embedded e-textile applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"114 - 121"},"PeriodicalIF":2.6,"publicationDate":"2025-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147338259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Consumer Value-Based Electrochemical CO2 Conversion to Ethanol by Employing Eco-Friendly Catalyst Design 采用环保催化剂设计的基于消费者价值的电化学CO2转化为乙醇

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-08 DOI: 10.1007/s13391-025-00611-6

Sung Yeol Choi, Chaeheon Woo, Da Woon Wang, Hyeon-Seok Bang, Dong Ki Lee, Hyung-Suk Oh, Kyong-Hwan Kim, Jae-Young Choi, Hye-Kyong Choi, Jeong Min Baik

{"title":"Consumer Value-Based Electrochemical CO2 Conversion to Ethanol by Employing Eco-Friendly Catalyst Design","authors":"Sung Yeol Choi, Chaeheon Woo, Da Woon Wang, Hyeon-Seok Bang, Dong Ki Lee, Hyung-Suk Oh, Kyong-Hwan Kim, Jae-Young Choi, Hye-Kyong Choi, Jeong Min Baik","doi":"10.1007/s13391-025-00611-6","DOIUrl":"10.1007/s13391-025-00611-6","url":null,"abstract":"<div><p>The electrochemical reduction of CO<sub>2</sub> (CO<sub>2</sub>RR) provides a promising approach to mitigate greenhouse gas emissions while generating value-added chemicals. Among potential products, C<sub>2</sub> species such as ethanol and ethylene are particularly attractive, yet achieving their selective and stable formation remains a major challenge. In this study, we compare two Cu–carbon catalyst synthesis strategies, i.e., chemical exfoliation–reduction (CER) based on a high-temperature acid treatment and hydrothermal (HT) synthesis based on a mild bottom-up method. Structural and electrochemical analyses revealed that HT produces atomically dispersed Cu–N active sites with enhanced selectivity toward ethanol and ethylene (ethanol Faraday efficiency ~ 38% at − 0.4 V, with HER suppressed below 30%), whereas CER yields heterogeneous CuO<sub>x</sub> clusters that mainly generate C<sub>1</sub> products with high H<sub>2</sub> output. The C2 Faradaic efficiency remained above 30% within the potential range of −0.5 to 0.9 V in 1.0 M KOH electrolyte condition. Beyond catalytic activity, an integrated techno-economic, life-cycle, and social life-cycle (3E) assessment demonstrated that HT offered lower synthesis cost, reduced environmental impact, and greater user acceptance. Collectively, these results establish HT as a more efficient and sustainable pathway for CO<sub>2</sub>RR catalyst development and highlight the value of coupling electrochemical evaluation with holistic 3E analysis to guide technologies that align performance, sustainability, and social acceptance.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"132 - 145"},"PeriodicalIF":2.6,"publicationDate":"2025-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147337793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Top-Emitting QLEDs with Thin Stabilizing Layer for Uniform Silver Electrodes 具有均匀银电极薄稳定层的顶发射qled

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-07 DOI: 10.1007/s13391-025-00614-3

Jaehyung Park, Jiwan Kim

引用次数: 0

Cl2/Ar and Cl2/O2 Inductively Coupled Plasma Etching of (-201) β-Ga2O3 Cl2/Ar和Cl2/O2电感耦合等离子体刻蚀(-201)β-Ga2O3

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-06 DOI: 10.1007/s13391-025-00610-7

Byoung Su Choi, Ki Hun Chae, Sungu Hwang, Jin Kon Kim, Byeong Woo Lee, Jeong Ho Ryu, Stephen J. Pearton, Hyun Cho

{"title":"Cl2/Ar and Cl2/O2 Inductively Coupled Plasma Etching of (-201) β-Ga2O3","authors":"Byoung Su Choi, Ki Hun Chae, Sungu Hwang, Jin Kon Kim, Byeong Woo Lee, Jeong Ho Ryu, Stephen J. Pearton, Hyun Cho","doi":"10.1007/s13391-025-00610-7","DOIUrl":"10.1007/s13391-025-00610-7","url":null,"abstract":"<div><p>A comparative study of Cl<sub>2</sub>/Ar and Cl<sub>2</sub>/O<sub>2</sub> inductively coupled plasma etching of (-201) β-Ga<sub>2</sub>O<sub>3</sub> was performed, and the effect of additive gases on the etch characteristics was studied. In both plasma chemistries, as Cl<sub>2</sub> content increased, the etch rate continuously increased and the highest etch rates were obtained at 80% Cl<sub>2</sub> content. In the 40Cl<sub>2</sub>/10Ar and 40Cl<sub>2</sub>/10O<sub>2</sub> ICP discharges, the etch rate initially increased with increasing ICP source power up to 600 W and then decreased above 600 W, while the etch rate showed a strong dependence on the rf chuck power. The Cl<sub>2</sub>/Ar ICP discharges produced significantly higher etch rates than the Cl<sub>2</sub>/O<sub>2</sub> plasmas and maximum etch rates of ~ 97 nm/min and ~ 40 nm/min were obtained in the 40Cl<sub>2</sub>/10Ar and 40Cl<sub>2</sub>/10O<sub>2</sub> ICP discharges, respectively. Under all plasma compositions investigated, the surfaces etched in the Cl<sub>2</sub>/Ar plasmas exhibited a constant normalized O/Ga ratio of ~ 0.85, which was somewhat lower than that of the unetched surface. The original stoichiometry was maintained on the Ga<sub>2</sub>O<sub>3</sub> surfaces etched in the 40Cl<sub>2</sub>/10O<sub>2</sub> ICP discharges while a significant preferential desorption of oxygen atoms was observed for the Ga<sub>2</sub>O<sub>3</sub> surfaces etched in the Cl<sub>2</sub>/O<sub>2</sub> ICP discharges with Cl<sub>2</sub> content below 60%. Pattern transfer with better anisotropy was achieved with the Cl<sub>2</sub>/Ar ICP discharges due to energetic Ar<sup>+</sup> ion-assisted nature of the etching.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"8 - 14"},"PeriodicalIF":2.6,"publicationDate":"2025-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative Study about Nano-Structured FePO4·2H2O as Precursors for the LiFePO4/C Cathode 纳米结构FePO4·2H2O作为LiFePO4/C阴极前驱体的比较研究

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-01 DOI: 10.1007/s13391-025-00606-3

Haneul Hong, Jeongwoo Lim, Subramanian Nithiananth, Jooyoung Lee, Gyu-Seok Choi, Chunjoong Kim

{"title":"Comparative Study about Nano-Structured FePO4·2H2O as Precursors for the LiFePO4/C Cathode","authors":"Haneul Hong, Jeongwoo Lim, Subramanian Nithiananth, Jooyoung Lee, Gyu-Seok Choi, Chunjoong Kim","doi":"10.1007/s13391-025-00606-3","DOIUrl":"10.1007/s13391-025-00606-3","url":null,"abstract":"<div><p>Lithium iron phosphate (LiFePO<sub>4</sub>) has emerged as a promising cathode material for lithium-ion batteries featured by its inherent safety, long cycle life, and low cost. Recently, iron(III) phosphate dihydrate (FePO<sub>4</sub>⋅2H<sub>2</sub>O) is widely used as the precursor for the synthesis of high-performance LiFePO<sub>4</sub>. The physicochemical properties of FePO<sub>4</sub>⋅2H<sub>2</sub>O critically affect the electrochemical performance of the final LiFePO<sub>4</sub> product. Herein, we systematically investigate the effect of four different iron sources on the material properties of FePO<sub>4</sub>⋅2H<sub>2</sub>O precursors. A comprehensive characterization was performed to analyze the crystal structure, morphology, hydration behavior and surface properties of the FePO<sub>4</sub>⋅2H<sub>2</sub>O precursors. Precursors were subsequently converted into LiFePO<sub>4</sub>/C composites of which phase purity, carbon coating uniformity, and electrochemical properties were studied. The LiFePO<sub>4</sub>/C composite derived from the metallic iron-based precursor demonstrated superior electrochemical performance. The precursor derived from metallic iron can be readily converted to the olivine structure with facile Li<sup>+</sup> diffusion.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"57 - 68"},"PeriodicalIF":2.6,"publicationDate":"2025-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0