Electronic Materials Letters最新文献_第5页

Effect of Sodiation Temperature on the Electrochemical and Structural Properties of NaNi0.85Fe0.10Mn0.05O2 Cathodes for Sodium-Ion Batteries 盐化温度对钠离子电池用NaNi0.85Fe0.10Mn0.05O2阴极电化学和结构性能的影响

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-10-30 DOI: 10.1007/s13391-025-00605-4

Dawoon Yoon, Heesang Lee, Subramanian Nithiananth, Ju Yeong Lee, Gyu-Seok Choi, Chunjoong Kim

{"title":"Effect of Sodiation Temperature on the Electrochemical and Structural Properties of NaNi0.85Fe0.10Mn0.05O2 Cathodes for Sodium-Ion Batteries","authors":"Dawoon Yoon, Heesang Lee, Subramanian Nithiananth, Ju Yeong Lee, Gyu-Seok Choi, Chunjoong Kim","doi":"10.1007/s13391-025-00605-4","DOIUrl":"10.1007/s13391-025-00605-4","url":null,"abstract":"<div><p>Due to the depletion and rising cost of lithium resources, sodium-ion batteries (SIBs) have emerged as a promising alternative for large-scale energy storage. However, layered oxide cathodes for SIBs suffer from the structural instability followed by rapid capacity fading. In this study, Ni<sub>0.85</sub>Fe<sub>0.10</sub>Mn<sub>0.05</sub>(OH)<sub>2</sub> precursors, synthesized via co-precipitation, were sodiated at various temperature range from 600 °C to 750 °C to fabricate NaNi<sub>0.85</sub>Fe<sub>0.10</sub>Mn<sub>0.05</sub>O<sub>2</sub> cathodes. The effects of sodiation temperature on structural stability and electrochemical performance were systematically investigated. The cathode sodiated at 700 °C exhibited uniform and spherical secondary particles with an optimal porous structure, leading to the highest initial discharge capacity of 197 mAh g<sup>-1</sup> and excellent rate capability. In contrast, the cathode sodiated at 650 °C delivered superior capacity retention albeit a slightly lower initial capacity, highlighting the importance of a balanced microstructure and crystallinity for the battery performance. Our work underscores that deliberate control of sodiation temperature is required to optimize the phase stability and electrochemical properties of layer-structured cathodes, thereby offering insights for the development of next-generation SIB cathode materials.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"47 - 56"},"PeriodicalIF":2.6,"publicationDate":"2025-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Electrochemical Performance of Silicon Monoxide Negative Electrodes via Electroless Nickel Plating 化学镀镍提高一氧化硅负极电化学性能

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-10-25 DOI: 10.1007/s13391-025-00607-2

Tae Hun Kim, Eunbi Go, Haebeen Kim, Ji Heon Ryu

{"title":"Enhanced Electrochemical Performance of Silicon Monoxide Negative Electrodes via Electroless Nickel Plating","authors":"Tae Hun Kim, Eunbi Go, Haebeen Kim, Ji Heon Ryu","doi":"10.1007/s13391-025-00607-2","DOIUrl":"10.1007/s13391-025-00607-2","url":null,"abstract":"<div><p>Silicon monoxide (SiO) is a high-capacity alloy-type negative electrode material for lithium-ion batteries, but it suffers from severe volume expansion and low electrical conductivity. Conventional carbon coating by chemical vapor deposition improves conductivity but requires high temperatures (> 700 °C) that trigger disproportionation reactions, leading to the formation of large Si crystallites and accelerated degradation. Here, electroless nickel (Ni) plating is employed as a low-temperature approach to enhance the conductivity of SiO without structural damage. SiO particles were sensitized with SnCl<sub>2</sub>, activated with PdCl<sub>2</sub>, and coated with Ni via sodium hypophosphite reduction at 50 °C and 80 °C. A higher plating temperature resulted in greater Ni loading and significantly improved cycling stability. These results demonstrate that electroless Ni plating is a thermally benign and effective strategy for advancing the performance of SiO-based negative electrodes.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"69 - 78"},"PeriodicalIF":2.6,"publicationDate":"2025-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00607-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS2 Field-Effect Transistors 中子辐照诱导的ReS2场效应晶体管的阱态和电性能退化

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-10-21 DOI: 10.1007/s13391-025-00604-5

Seung Yong Back, Gyeong Deok Seo, Ji Won Heo, Hagyoul Bae, Bong-ki Jung, TaeWan Kim

{"title":"Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS2 Field-Effect Transistors","authors":"Seung Yong Back, Gyeong Deok Seo, Ji Won Heo, Hagyoul Bae, Bong-ki Jung, TaeWan Kim","doi":"10.1007/s13391-025-00604-5","DOIUrl":"10.1007/s13391-025-00604-5","url":null,"abstract":"<div><p>Ultrathin ReS<sub>2</sub>-based field-effect transistors (FETs) are promising candidates for use in extreme radiation environments, such as nuclear facilities and space missions, due to their layered structure and unique electrical properties. In this study, we investigate the degradation in electrical performance of ReS<sub>2</sub> FETs subjected to 2.2 MeV neutron irradiation. As neutron fluence increases, the on-current and field-effect mobility decrease significantly, from 84% to 31% and from 88% to 37% of their initial values, respectively, while both subthreshold swing (SS) and hysteresis exhibit notable increases. These degradations are attributed to the formation of oxides and the generation of interface traps induced by irradiation. Additionally, threshold voltage shifts are observed, which are attributed to the varying dominance of oxide-trap- and interface-trap-related mechanisms. These findings enhance the understanding of fast neutron irradiation effects on ReS<sub>2</sub>-based nanoelectronic devices and support their reliable operation in radiation-rich environments.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"1 - 7"},"PeriodicalIF":2.6,"publicationDate":"2025-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing Hydrogen Radical Resistance in Graphene-Based EUV Pellicles via Mo and Mo2C Capping Layers 通过Mo和Mo2C封盖层增强石墨烯基EUV薄膜的抗氢自由基能力

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-10-18 DOI: 10.1007/s13391-025-00603-6

Jeong-Uk Nam, Se-Hun Jeon, Young-Geun Choi, Yun Sung Woo

{"title":"Enhancing Hydrogen Radical Resistance in Graphene-Based EUV Pellicles via Mo and Mo2C Capping Layers","authors":"Jeong-Uk Nam, Se-Hun Jeon, Young-Geun Choi, Yun Sung Woo","doi":"10.1007/s13391-025-00603-6","DOIUrl":"10.1007/s13391-025-00603-6","url":null,"abstract":"<div><p>This study explores the use of ultra-thin Mo and Mo<sub>2</sub>C films as protective capping layers for graphene-based EUV pellicles, which are essential for next-generation lithography. As semiconductor miniaturization progresses, EUV lithography utilizing materials with high transmittance and mechanical strength, such as graphene, becomes increasingly critical. However, graphene’s vulnerability to hydrogen radicals generated in EUV environments presents a significant challenge. In this research, films less than 5 nm thick of Mo and Mo<sub>2</sub>C were deposited on ozone-treated and untreated graphene films using electron-beam evaporation and flip-sputtering methods, respectively. The results reveal that Mo films deposited by e-beam evaporation are prone to etching and cause severe damage to the underlying graphene due to chemical reactions with hydrogen radicals, although Mo films deposited on ozone-treated graphene exhibited higher resistance. Conversely, for amorphous Mo<sub>2</sub>C films deposited via sputtering, atomic defects in the graphene increased with prolonged hydrogen exposure, indicating radical penetration through the film. These findings suggest that while Mo offers limited protection, Mo<sub>2</sub>C has the potential to serve as an effective capping material for graphene EUV pellicles, provided its resistance to hydrogen radicals can be further enhanced through crystallization. Consequently, strategies to improve the stability and adhesion of Mo<sub>2</sub>C are proposed, aiming to develop high-performance, durable pellicle materials for future EUV lithography applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"79 - 91"},"PeriodicalIF":2.6,"publicationDate":"2025-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Niobium-Based Dry Coating Effect on the Battery Performance of the High-Nickel Layer-Structured Cathode 铌基干涂层对高镍层结构阴极电池性能的影响

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-10-11 DOI: 10.1007/s13391-025-00602-7

Yong Min Kwon, Kookhan Kim, Jeongdoo Yi, Hyun-Wook Park, Yang-Su Kim, Jahun Koo, Seongho Jo, Minsang Jeon, Hyuck Jung, Luanna Silveira Parreira, Robson de Souza Monteiro, Rogerio Marques Ribas, Chunjoong Kim, Jongmin Kim

{"title":"Niobium-Based Dry Coating Effect on the Battery Performance of the High-Nickel Layer-Structured Cathode","authors":"Yong Min Kwon, Kookhan Kim, Jeongdoo Yi, Hyun-Wook Park, Yang-Su Kim, Jahun Koo, Seongho Jo, Minsang Jeon, Hyuck Jung, Luanna Silveira Parreira, Robson de Souza Monteiro, Rogerio Marques Ribas, Chunjoong Kim, Jongmin Kim","doi":"10.1007/s13391-025-00602-7","DOIUrl":"10.1007/s13391-025-00602-7","url":null,"abstract":"<div><p>To enhance the battery performance of layer-structured cathode materials, the niobium (Nb) coating was applied using a commercially applicable dry mixing method. The addition of lithium during the coating process induced the in-situ formation of a lithium-niobium-oxide (Li–Nb–O) and uniform distribution on the active material surface, resulting in superior electrochemical performance compared to simple addition of niobium for the dry coating. Furthermore, optimizing the coating temperature facilitated the formation of the Li–Nb–O layer with partial doping of Nb into the bulk structure, thereby simultaneously improving both capacity and cycle-life performance. The electrochemical performance was further enhanced by employing a multi-component coating strategy including aluminum. Moreover, gas generation in pouch-type full cells was evaluated after high-temperature storage in order to assess commercial viability. The Nb-based multi-component coated cathode exhibited less gas generation than its conventional cobalt-coated counterpart, confirming that the Nb-based coating layer effectively suppresses oxygen evolution even at the elevated temperature.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"36 - 46"},"PeriodicalIF":2.6,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two Dimensional MXenes Drive Multifunctional Resistive Memory, Gas Sensing, and Gasistor Devices: A Perspective 二维MXenes驱动多功能电阻存储器，气体传感，和气敏器件：一个视角

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-10-04 DOI: 10.1007/s13391-025-00599-z

Hyojung Kim

{"title":"Two Dimensional MXenes Drive Multifunctional Resistive Memory, Gas Sensing, and Gasistor Devices: A Perspective","authors":"Hyojung Kim","doi":"10.1007/s13391-025-00599-z","DOIUrl":"10.1007/s13391-025-00599-z","url":null,"abstract":"<div><p>Two-dimensional (2D) transition metal carbides and nitrides, referred to as MXenes, are attracting increasing attention as adaptable components for high-performance electrical and sensing devices. This perspective examines their function across three intersecting platforms: resistive switching memory, gas sensors, and gasistors that integrate both functionalities. Solution-based synthesis, laser patterning, and low-temperature assembly on flexible substrates are emphasized as methods that accelerate the transition from powder to device. Spontaneous oxidation, moisture-driven degradation, and precise termination control remain challenges to overcome, but new solutions, including surface passivation, fluoride-free etching, and data-driven material selection, are being developed rapidly. This article proposes design guidelines that connect atomic-scale chemistry with device-level metrics, facilitating the transition of MXene memories, sensors, and gasistors from proof-of-concept studies to reliable systems for energy storage, neuromorphic computation, and environmental monitoring.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"103 - 113"},"PeriodicalIF":2.6,"publicationDate":"2025-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147337222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CVD Synthesis of High-quality Continuous Fe-Doped WSe2 Using a Solution-Based Precursor 用溶液基前驱体CVD合成高质量连续掺铁WSe2

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-09-30 DOI: 10.1007/s13391-025-00596-2

Khalid Mehmood, Ji Hwan Kim, Eun Bee Ko, Ho Min Kang, Jun Young Ma, Young Min Park, Jin Ho Kim, Min Gi Son, Sung Jin An, Hyun Ho Kim

{"title":"CVD Synthesis of High-quality Continuous Fe-Doped WSe2 Using a Solution-Based Precursor","authors":"Khalid Mehmood, Ji Hwan Kim, Eun Bee Ko, Ho Min Kang, Jun Young Ma, Young Min Park, Jin Ho Kim, Min Gi Son, Sung Jin An, Hyun Ho Kim","doi":"10.1007/s13391-025-00596-2","DOIUrl":"10.1007/s13391-025-00596-2","url":null,"abstract":"<div><p>Two-dimensional transition metal dichalcogenides (TMDCs) are promising semiconductors due to their atomic thickness, excellent electrical properties, and tunable bandgaps. While chemical vapor deposition (CVD) enables high-quality TMDC growth, conventional gas-phase methods face limitations in precursor utilization and cost. Here, we demonstrate a scalable solution-based CVD method for monolayer WSe<sub>2</sub> synthesis using an aqueous ammonium metatungstate and sodium cholate precursor. Growth temperature and hydrogen partial pressure were optimized to achieve high-crystallinity films, and large-area uniform monolayers were obtained by controlling precursor film thickness. Fe doping was realized by adding FeSO<sub>4</sub> to the precursor, inducing a carrier polarity shift from ambipolar to n-type. This approach offers a versatile route for scalable synthesis and doping of TMDCs for electronic and optoelectronic applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"819 - 828"},"PeriodicalIF":2.6,"publicationDate":"2025-09-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of Crack Parameters and Electrical Property in Flexible Devices Under Bending State 弯曲状态下柔性器件裂纹参数及电性能分析

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-09-29 DOI: 10.1007/s13391-025-00601-8

Dong-Hyeon Kim, Ji-Youn Kwak, Ju-Young Kim, Eun-chae Jeon

{"title":"Analysis of Crack Parameters and Electrical Property in Flexible Devices Under Bending State","authors":"Dong-Hyeon Kim, Ji-Youn Kwak, Ju-Young Kim, Eun-chae Jeon","doi":"10.1007/s13391-025-00601-8","DOIUrl":"10.1007/s13391-025-00601-8","url":null,"abstract":"<div><p>Repeated or sustained bending in flexible displays induces mechanical stress on all components, particularly affecting narrow and thin electronic circuits. There is a lack of research that maintains the bending state during observation of cracks and analyzes electrical properties based on crack parameters. This study aims to observe crack parameters under the bending state and analyze the relationship between crack parameters and electrical properties. The results showed that a smaller bending radius induced greater tensile stress on the specimen surface, which in turn increased both crack density and crack width. Measurement of resistance under bending state also revealed that smaller bending radius resulted in larger crack width and corresponding increases in resistance. We also demonstrated that analyzing cracks in the flat state (after bending state) significantly underestimated the effects of crack width in electrical properties because crack width was almost recovered indicating reversible deformation while crack density remained unchanged, representing irreversible damage after bending state. Therefore, crack analysis under actual bending state is essential for accurately evaluating the mechanical and electrical reliability of flexible electronic components.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"843 - 853"},"PeriodicalIF":2.6,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Halide Perovskite: The Key to Overcoming von Neumann Bottlenecks in AI Workloads 卤化物钙钛矿：克服人工智能工作负载中冯诺依曼瓶颈的关键

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-09-23 DOI: 10.1007/s13391-025-00597-1

Geon Kim, Sunghyun Jang, Hyojung Kim

{"title":"Halide Perovskite: The Key to Overcoming von Neumann Bottlenecks in AI Workloads","authors":"Geon Kim, Sunghyun Jang, Hyojung Kim","doi":"10.1007/s13391-025-00597-1","DOIUrl":"10.1007/s13391-025-00597-1","url":null,"abstract":"<div><p>The well-known von Neumann bottleneck has emerged as a significant obstacle in computationally demanding AI tasks, as frequent data transfers between logic and memory impair system performance and reduce energy efficiency, thereby motivating the exploration of in-memory and neuromorphic computing as potential solutions. Among emerging material options, halide perovskites (HPs) exhibit a tunable bandgap, rapid ion migration, mechanical pliability, and facile low-temperature processing, making them particularly advantageous for next-generation computing. This article surveys HP-based memristors and synaptic transistors, emphasizing their underlying physical mechanisms, capacity to replicate synaptic behavior, and multilevel memory functionality within novel computing architectures. Additionally, we address integration challenges, particularly regarding stability, variability, and scalability. By examining recent advances, we highlight HPs as a promising materials platform for next-generation AI hardware that can overcome the limitations of traditional von Neumann architectures.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"756 - 783"},"PeriodicalIF":2.6,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Passivation Strategy for High Performance Perovskite Solar Cells Using a Multifunctional Lewis Base Potassium Salt Additive 多功能路易斯碱钾盐添加剂用于高性能钙钛矿太阳能电池的钝化策略

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-09-23 DOI: 10.1007/s13391-025-00598-0

Seungbu Han, Seungyeon Hong, Sung Hun Lee, Kukhyun Jo, Hyo Jung Kim

{"title":"Passivation Strategy for High Performance Perovskite Solar Cells Using a Multifunctional Lewis Base Potassium Salt Additive","authors":"Seungbu Han, Seungyeon Hong, Sung Hun Lee, Kukhyun Jo, Hyo Jung Kim","doi":"10.1007/s13391-025-00598-0","DOIUrl":"10.1007/s13391-025-00598-0","url":null,"abstract":"<div><p>We report the incorporation of 2-(N-morpholino)ethanesulfonic acid potassium salt (MESK) as a multifunctional additive in metal-halide perovskite solar cells to enhance crystallinity and suppress defect formation. The sulfonate (-SO<sub>3</sub><sup>−</sup>) and ether (-O-) groups in MESK act as Lewis bases to promote vertical crystal orientation, while the K<sup>+</sup> ions mitigate defect formation at grain boundaries and interstitial sites. As a result, the power conversion efficiency (PCE) of the devices improved significantly from 15.09 to 18.03%. To elucidate the underlying mechanism, we performed in-situ grazing-incidence wide-angle X-ray scattering (GIWAXS) during the spin-coating process. The GIWAXS data revealed that MESK induces the formation of intermediate phases prior to the crystallization of the perovskite structure, thereby retarding the crystallization dynamics. This delayed crystallization facilitates crystal growth and the preferential ordering of perovskite films. Our findings highlight the potential of MESK as a versatile additive for improving the performance of perovskite solar cells.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 1","pages":"24 - 35"},"PeriodicalIF":2.6,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145915734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0