Electronic Materials Letters最新文献

{"title":"Synthesis of Core/Shell WO3/WS2 Heterostructure Nanowires with Negative Photo-Responsiveness","authors":"Yu-Jin Song,&nbsp;Changhyeon Yoo,&nbsp;Camellia Schwartzman,&nbsp;Han-Kyun Shin,&nbsp;Hyoung J. Cho,&nbsp;Yeonwoong Jung,&nbsp;Jung Han Kim","doi":"10.1007/s13391-024-00524-w","DOIUrl":"10.1007/s13391-024-00524-w","url":null,"abstract":"<div><p>WO₃/WS₂ core/shell nanowires were synthesized using a scalable fabrication method by combining wet chemical etching and chemical vapor deposition (CVD). Initially, WO₃ nanowires were formed through wet chemical etching using a potassium hydroxide (KOH) solution, followed by oxidation at 650 °C. These WO₃ nanowires were then sulfurized at 900 °C to form a WS₂ shell, resulting in WO₃/WS₂ core/shell nanowires with diameters ranging from 90 to 370 nm. The synthesized nanowires were characterized using scanning electron microscopy (SEM), Raman, energy-dispersive X-ray spectroscopy (EDS), X-ray diffractometry (XRD), and transmission electron microscopy (TEM). The shell is composed of 2D WS₂ layers with uniformly spaced 2D layers as well as the atomically sharp core/shell interface of WO₃/WS₂. Notably, the WO₃/WS₂ heterostructure nanowires exhibited a unique negative photoresponse under visible light (405 nm) illumination. This negative photoresponse highlights the importance of interface engineering in these heterostructures and demonstrates the potential of WO₃/WS₂ core/shell nanowires for applications in photodetectors and other optoelectronic devices.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"87 - 93"},"PeriodicalIF":2.1,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparison of Diffusion Barrier Properties of Ni–Fe and Ni–Fe–W Layer at the Cu/Sn Interface","authors":"Jinyang Liu,&nbsp;Chongyang Li,&nbsp;Yuexiao Liu,&nbsp;Anmin Hu,&nbsp;Ming Li","doi":"10.1007/s13391-024-00525-9","DOIUrl":"10.1007/s13391-024-00525-9","url":null,"abstract":"<div><p>Bump is a pivotal technology in 3D IC. However, with the reduction in bump size, there is an urgent need for a high-performance barrier layer material to retard the growth of intermetallic compounds (IMCs) at the interface. The study investigated the diffusion barrier properties and mechanical properties of electrodeposited Ni, Ni–15Fe, Ni–44Fe, Ni–42Fe–16W, and Ni–41Fe–28W. Ni–41Fe–28W demonstrated superior barrier properties, with a thickness of 0.42 μm after aging at 150 °C for 720 h. During the early stages of aging, FeSn₂ were formed at the interface, followed by the later generation of blocky Ni₃Sn₄. With a rise in Fe content, the nucleation of Ni₃Sn₄ was suppressed and the wettability and shear strength of the interface were also enhanced. As for Cu/Ni–Fe–W/Sn, a thin layer of FeSn₂ was also formed, and a whitish Ni–Fe–W–Sn layer was developed at the interface. After aging for 720 h, no significant Ni–Sn IMCs were observed. As W content increased, FeSn₂ converted from layered type to island type. The introduction of W significantly inhibited the diffusion of IMCs nucleation at the interface, endowing Ni–Fe–W with excellent barrier properties. Although W reduced the interface wettability, it enhanced shear strength at lower concentrations, with SAC305/Ni–42Fe–16W achieving the highest strength of 34.8 MPa. While as W content increased, the fracture mode shifted from ductile fracture within the solder to mixed ductile–brittle fracture, leading to decrease in interface reliability. This study provided valuable insights for the design of high-performance barrier layers in advanced packaging.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"22 - 31"},"PeriodicalIF":2.1,"publicationDate":"2024-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoelectric Characteristics of Bulk Cr2Te3 with Low Lattice Thermal Conductivity","authors":"Donghyun Shin,&nbsp;Hyunji Kim,&nbsp;Joseph Ngugi Kahiu,&nbsp;Samuel Kimani Kihoi,&nbsp;Ho Seong Lee","doi":"10.1007/s13391-024-00523-x","DOIUrl":"10.1007/s13391-024-00523-x","url":null,"abstract":"<div><p>In this study, we aimed to synthesize bulk Cr₂Te₃ and evaluate its thermoelectric properties. Previously, Cr₂Te₃ with a layered structure has primarily been synthesized in thin film form for studies that focused on its magnetic properties. The intrinsic layered structure of Cr₂Te₃ can contributes to its low lattice thermal conductivity. Our experimental results confirmed the successful synthesis of a homogeneous single-phase specimen and revealed a significantly low lattice thermal conductivity of 0.31 W/mK at 673 K. Additionally, we explored the substitution of titanium and germanium at chromium sites as a method to enhance thermoelectric performance, achieving a notable increase in the power factor.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"70 - 78"},"PeriodicalIF":2.1,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-Functional Molybdenum Oxide Doping to Improve the Electrical Characteristics of Indium Oxide Thin Film Transistors","authors":"Kwan-Jun Heo,&nbsp;Jae-Yun Lee,&nbsp;Gergely Tarsoly,&nbsp;Sung-Jin Kim","doi":"10.1007/s13391-024-00522-y","DOIUrl":"10.1007/s13391-024-00522-y","url":null,"abstract":"<div><p>This study investigates the utilization of MoO₃ precursors to enhance the electrical properties and stability of In₂O₃ TFTs based on eco-friendly aqueous solutions. Specifically, MoO₃ doped In₂O₃ (Mo-In₂O₃) TFTs were examined in this research. The Mo cation, hydroxide anion, and oxide radical of the MoO₃ precursor provide free electrons to the In₂O₃ thin film, reducing the trap site between the semiconductor interface, the semiconductor and the insulator, and improving the stability of the device by adjusting the oxygen vacancy. To verify the change in the electrical properties of In₂O₃ TFT due to MoO₃ doping, measurements of electron mobility after 30 days confirmed that In₂O₃ TFT electron mobility decreased by more than 80%, whereas Mo-In₂O₃ TFT electron mobility remained stable. PBS and NBS reliability evaluations confirmed that the Vth change of Mo- In₂O₃ TFT was less than that of In₂O₃ TFT. (In₂O₃ TFT PBS: 5.55 V, NBS: 0.33 V, Mo-In₂O₃ TFT PBS: 4.04 V, NBS: 0.10 V). In order to confirm the interface change of In₂O₃ film according to MoO₃ Doping, the difference in surface roughness was measured using an AFM and found to be within 4%. In addition, the doping effect of the active layer was verified through changes in oxygen species in XPS analysis. To demonstrate its application as an active electronic device, a Mo-In₂O₃ TFT based resistance load inverter was evaluated, and the voltage transfer curve and excellent inversion characteristics of the inverter were confirmed under various <i>V</i>_<i>DD</i> conditions.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div><div><p>Kwan-Jun Heo et al., multi-functional molybdenum oxide doping to improve the electrical characteristics of indium oxide thin film transistors</p></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"9 - 21"},"PeriodicalIF":2.1,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Crystal Domain on Electrical Performance and Bending Durability of Flexible Organic Thin-Film Transistors with diF-TES-ADT Semiconductor","authors":"Dongwook Kim,&nbsp;Joel Ndikumana,&nbsp;Hyeonju Lee,&nbsp;Seullee Lee,&nbsp;Youngjun Yun,&nbsp;Jaehoon Park","doi":"10.1007/s13391-024-00519-7","DOIUrl":"10.1007/s13391-024-00519-7","url":null,"abstract":"<div><p>In this study, we examined the impact of crystal domain on the electrical performance and durability of flexible organic thin-film transistors (OTFTs). To analyze this, we fabricated the OTFTs on a polyimide substrate using 2,8-difluoro-5,11bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) as the organic semiconductor. To examine the influence of the film morphology and crystallinity on the electrical characteristics of OTFTs, we dissolved diF-TES-ADT in chlorobenzene and toluene solvent, annealed it at different temperatures, and then evaluated its electrical performances. The optimum annealing temperature of the diF-TES-ADT OTFTs was determined through the comprehensive analysis of the electrical parameters. The film morphology and crystallinity of organic semiconductor as a function of temperature were examined using the technical measurement analysis such as the atomic force measurement, X-ray diffraction and polarized optic microscopy. Furthermore, we demonstrated the electrical degradation of the device under prolonged bending cycles and observed the effect of bending stress on the electrical performance of OTFTs. The size of the crystalline domain and surface morphology indicated a slower deterioration of OTFT performance with an increase in the number of bending cycles. It was approved that the crystal grain size and morphology of organic semiconductor may not be critical factors determining the electrical performance of OTFTs, however, the electrical durability against bending stress was significantly degraded by these factors. We speculate that the smaller grain sizes and directionally-grown crystalline structure are highly vulnerable to bending stress, resulting in increased occurrence of void cracks and structural defects.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"1 - 8"},"PeriodicalIF":2.1,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142264597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All-Cobalt-Free Layered/Olivine Mixed Cathode Material for High-Electrode Density and Enhanced Cycle-Life Performance","authors":"Chang-Su Kim,&nbsp;Kookhan Kim,&nbsp;An-Seop Im,&nbsp;Sung-Su Kim,&nbsp;Jongmin Kim,&nbsp;Ji-Yong Eom","doi":"10.1007/s13391-024-00521-z","DOIUrl":"10.1007/s13391-024-00521-z","url":null,"abstract":"<div><p>In this study, a high-energy-density electrode was fabricated by combining cobalt-free layered oxide (NM) with olivine LiFePO₄ (LFP) nanoparticles. The resulting mixed all-cobalt-free cathode electrode effectively minimized electrode porosity by filling the interstitial spaces between the micron-sized layered-oxide particles with nanoscale LFP particles, significantly improving electrode density, and exhibiting excellent electrode conductivity. Furthermore, the composite electrode composed of NM and LFP achieved a volumetric capacity exceeding 600 mAh/cm^− 3, comparable to that of typical layered oxide cathode materials, while also demonstrating enhanced cycle-life performance relative to electrodes composed solely of layered oxide or LFP. The enhanced electrochemical performance is attributed to the efficient lithium-ion and electron conduction facilitated by the intimate contact between NM and LFP particles, the suppression of NM particle degradation due to the relatively stable LFP particles on the NM surface, and the reduced particle fracture during roll-pressing. These improvements have been confirmed through electrochemical analyses and electrode observations.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 6","pages":"799 - 806"},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142190110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-speed and Sub-ppm Detectable Tellurene NO2 Chemiresistive Room-Temperature Sensor under Humidity Environments","authors":"Yeonjin Je,&nbsp;Sang-Soo Chee","doi":"10.1007/s13391-024-00520-0","DOIUrl":"10.1007/s13391-024-00520-0","url":null,"abstract":"<div><p>Two-dimensional material, tellurium, composed of tellurium, has emerged as a promising material for NO₂ gas sensing due to its superior intrinsic electrical conductivity and strong affinity to NO₂. However, the majority of literature on tellurene-based gas sensors has primarily focused on NO₂ detection performances under dry condition, despite the importance of considering humidity-dependent detection properties for practical gas sensing applications. Here, we explore NO₂ detection properties of tellurene-based chemiresistive gas sensor devices under humidity environments at room temperature. The resultant tellurene synthesized via a hydrothermal route presents 2D flake-like morphologies with highly crystalline hexagonal structures. The obtained tellurene chemiresistive sensor devices exhibit a good NO₂ gas response of 35% with a fast response time of 14 s, under dry conditions. Interestingly, our tellurene-based sensor devices also present the humidity-independent NO₂ gas detection performances while achieving a fast response time. These outstanding detection performances are likely due to intrinsically superior electrical conductivity and structural stability of tellurene in air.</p><h3>Graphic Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"94 - 101"},"PeriodicalIF":2.1,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142224575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A Neural Network Approach for Health State Estimation of Lithium-Ion Batteries Incorporating Physics Knowledge","authors":"Guoqing Sun,&nbsp;Yafei Liu,&nbsp;Xuewen Liu","doi":"10.1007/s13391-024-00518-8","DOIUrl":"10.1007/s13391-024-00518-8","url":null,"abstract":"<div><p>The assessment of the State of Health (SOH) of lithium-ion batteries is paramount to ensuring the safety and reliability of battery management systems. Numerous researchers have employed Equivalent Circuit Models (ECM) and data-driven methodologies to estimate SOH. Each methodology has its merits and drawbacks, yet their integration poses substantial challenges. This paper proposes a novel approach for SOH estimation that synthesizes ECM with data-driven techniques. Initially, parameters for a second-order ECM are identified utilizing the voltage rebound characteristics of lithium-ion batteries. Subsequently, a predictive model is established employing a Long Short-Term Memory (LSTM) neural network. Finally, features extracted from the ECM and the dataset are utilized as inputs for the LSTM neural network to predict SOH. The efficacy of the proposed technique is corroborated by datasets from NASA and CALCE. Results indicate that the novel method’s maximum Root Mean Square Error (RMSE) is confined to 0.79%, and the Mean Absolute Error (MAE) is limited to 0.47%. Compared to other methods, this approach exhibits faster convergence, higher precision, and enhanced generalizability.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"119 - 133"},"PeriodicalIF":2.1,"publicationDate":"2024-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142190087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Magnetic Permeability Through Improved Packing Density for Thin-Film Type Power Inductors for High-Frequency Applications","authors":"Sung Yong An,&nbsp;Boum Seock Kim","doi":"10.1007/s13391-024-00517-9","DOIUrl":"10.1007/s13391-024-00517-9","url":null,"abstract":"<div><p>This study investigates methods to enhance the permeability of metal magnetic composites, crucial for the performance of thin film power inductors in high-frequency applications, such as those in contemporary smartphones operating in the MHz range. Traditional reliance on ferrite magnetic materials is eschewed in favor of metal magnetic materials combined with epoxy to create novel composites aimed at optimizing packing density and significantly increasing magnetic permeability. The impact on permeability is explored using four different metal powders: pure iron (FE), Fe-Si (FS), Fe-Si-B-C-Cr (AM), and Fe-Si-B-Nb-Cu (NC). The FE sample is produced using carbonyl iron powder, resulting in a particle size (D50) of 2.1 μm. The FS sample, produced through gas atomization, has a particle size of 17.5 μm, while the AM and NC samples, produced via water atomization, yield particle sizes (D50) of 19.4 μm and 23 μm, respectively. Analyses using X-ray diffraction (XRD) and Mösbauer spectroscopy reveal that FE and FS samples have crystalline structures, whereas AM and NC are amorphous. Scanning electron microscopy confirms the spherical shape of particles in all samples. Theoretical calculations, based on Ollendorff’s theory of permeability and Suzuki and Oshima’s models on packing fraction, suggest that a composite with a ratio of 8:1.2:0.8 and particle sizes of approximately 25 μm, 1.5 μm, and 0.1 μm, respectively, could achieve a permeability value of up to 138.1. This demonstrates the potential for achieving high permeability at MHz frequencies through strategic packing of voids with submicron and nanopowders, marking a significant advancement in the field of thin film power inductors.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 6","pages":"733 - 744"},"PeriodicalIF":2.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142190088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Strain Sensor Based on AgNWs/MXene/SEBS with High Sensitivity and Wide Strain Range","authors":"Yubo Yao,&nbsp;Hongfei Dai,&nbsp;Mengnan Ji,&nbsp;Ying Han,&nbsp;Bo Jiang,&nbsp;Chi Cheng,&nbsp;Xiaolei Song,&nbsp;Ying Song,&nbsp;Guangfeng Wu","doi":"10.1007/s13391-024-00514-y","DOIUrl":"10.1007/s13391-024-00514-y","url":null,"abstract":"<div><p>Flexible strain sensors that combine high sensitivity and wide range are important for developing wearable electronics. In this paper, AgNWs/MXene/SEBS flexible strain sensor with high sensitivity and wide strain range was prepared using a thermoplastic elastomer (styrene-ethylene-butene-styrene) SEBS as the polymer matrix and AgNWs and MXene as the composite conductive fillers. The sensitivity of the AgNWs/MXene/SEBS sensor is significantly higher than that of the AgNWs/SEBS and MXene/SEBS sensors based on a single conductive filler. At 100% strain, the AgNWs/MXene/SEBS sensor has a sensitivity of 176.25. The sensor detects small strains of 0.5-5% as well as large strains of 5–50% with high linearity. The sensors remained stable after 200 cycles. The AgNWs/MXene/SEBS tensile sensors were subjected to array testing and finger bending recognition, and the sensors have promising applications in human motion monitoring.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 6","pages":"684 - 693"},"PeriodicalIF":2.1,"publicationDate":"2024-08-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141920465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}