{"title":"Pribramite CuSbSe2: Solid-State Synthesis and Thermoelectric Properties","authors":"Min Ji Choi, Sang Jun Park, Il-Ho Kim","doi":"10.1007/s13391-024-00542-8","DOIUrl":null,"url":null,"abstract":"<div><p>Pribramite (CuSbSe<sub>2</sub>) is gaining attention as a potential thermoelectric material due to its high thermopower and low thermal conductivity, although it remains relatively underexplored compared to more widely studied thermoelectric compounds. This study focused on optimizing the synthesis and sintering processes of CuSbSe<sub>2</sub> using mechanical alloying (MA) and hot pressing (HP) methods to enhance its thermoelectric performance. The desired pribramite phase was successfully synthesized in both mechanically alloyed powders and hot-pressed specimens, though secondary phases such as bytizite (Cu<sub>3</sub>SbSe<sub>3</sub>) and permingeatite (Cu<sub>3</sub>SbSe<sub>4</sub>) were identified. Thermogravimetric and differential scanning calorimetry analyses indicated a melting point for CuSbSe<sub>2</sub> between 723 and 728 K. Densely sintered samples achieved high relative densities of 98.6–99.4% through the MA–HP process. Electrical characterization revealed non-degenerate semiconductor behavior with temperature-dependent conductivity. Seebeck coefficient measurements confirmed p-type semiconductor characteristics, with holes as the major charge carriers. An intrinsic transition in the Seebeck coefficient was observed, with the transition temperature decreasing as the HP temperature increased. A maximum power factor of 0.23 mWm<sup>−1</sup> K<sup>−2</sup> was achieved at 623 K, while thermal conductivity steadily decreased across the measured temperature range of 323 K to 623 K. The highest dimensionless figure of merit (ZT) reached 0.28 at 623 K, indicating promising thermoelectric potential for CuSbSe<sub>2</sub>.</p><h3>Graphical Abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"216 - 227"},"PeriodicalIF":2.1000,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-024-00542-8","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
Pribramite (CuSbSe2)作为一种潜在的热电材料,因其热功率高、热导率低而日益受到关注,但与研究更广泛的热电化合物相比,它的研究仍相对不足。本研究的重点是利用机械合金化(MA)和热压(HP)方法优化 CuSbSe2 的合成和烧结过程,以提高其热电性能。在机械合金粉末和热压试样中都成功合成了所需的普氏相,但也发现了副沸石(Cu3SbSe3)和孔雀石(Cu3SbSe4)等次生相。热重分析和差示扫描量热分析表明,CuSbSe2 的熔点在 723 至 728 K 之间。通过 MA-HP 工艺,致密烧结样品达到了 98.6-99.4% 的高相对密度。电学特性分析表明,这种非退化半导体具有随温度变化的导电性。塞贝克系数测量证实了以空穴为主要电荷载流子的 p 型半导体特性。观察到塞贝克系数的内在转变,转变温度随着 HP 温度的升高而降低。在 623 K 时,功率因数达到最大值 0.23 mWm-1 K-2,而热导率在 323 K 至 623 K 的测量温度范围内稳步下降。
Pribramite CuSbSe2: Solid-State Synthesis and Thermoelectric Properties
Pribramite (CuSbSe2) is gaining attention as a potential thermoelectric material due to its high thermopower and low thermal conductivity, although it remains relatively underexplored compared to more widely studied thermoelectric compounds. This study focused on optimizing the synthesis and sintering processes of CuSbSe2 using mechanical alloying (MA) and hot pressing (HP) methods to enhance its thermoelectric performance. The desired pribramite phase was successfully synthesized in both mechanically alloyed powders and hot-pressed specimens, though secondary phases such as bytizite (Cu3SbSe3) and permingeatite (Cu3SbSe4) were identified. Thermogravimetric and differential scanning calorimetry analyses indicated a melting point for CuSbSe2 between 723 and 728 K. Densely sintered samples achieved high relative densities of 98.6–99.4% through the MA–HP process. Electrical characterization revealed non-degenerate semiconductor behavior with temperature-dependent conductivity. Seebeck coefficient measurements confirmed p-type semiconductor characteristics, with holes as the major charge carriers. An intrinsic transition in the Seebeck coefficient was observed, with the transition temperature decreasing as the HP temperature increased. A maximum power factor of 0.23 mWm−1 K−2 was achieved at 623 K, while thermal conductivity steadily decreased across the measured temperature range of 323 K to 623 K. The highest dimensionless figure of merit (ZT) reached 0.28 at 623 K, indicating promising thermoelectric potential for CuSbSe2.
期刊介绍:
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.