Electronic Materials Letters最新文献

{"title":"High-Performance High-Entropy Oxide (FeMnAlCrTi)3O4 as a Cathode Material for Aqueous Zinc-Ion Batteries","authors":"Renzhi Jiang,&nbsp;Yuncheng Cai,&nbsp;Dingce Yan","doi":"10.1007/s13391-026-00636-5","DOIUrl":"10.1007/s13391-026-00636-5","url":null,"abstract":"<div><p>Aqueous zinc-ion batteries (ZIBs) have emerged as a highly promising candidate for next-generation energy storage systems, owing to their inherent cost-effectiveness, exceptional safety, and environmental benignity. However, the sluggish development of high-performance cathode materials remains a critical bottleneck hindering the practical application of ZIBs. Herein, we report the rational design and successful synthesis of a novel high-entropy oxide, (FeMnAlCrTi)₃O₄ (denoted as FMACTO), and systematically evaluate its electrochemical performance as a cathode material for ZIBs. Benefiting from the unique multi-cation synergistic effect and lattice distortion inherent in FMACTO, the material exhibits significantly enhanced electronic conductivity and accelerated zinc-ion diffusion kinetics. As a result, FMACTO delivers a high specific capacity of 238.6 mAh g⁻¹ at a current density of 0.2 A g⁻¹ and excellent cycling stability with 70.1% capacity retention after 1100 charge-discharge cycles. This work not only demonstrates the great potential of FMACTO as a high-performance ZIB cathode but also provides a versatile high-entropy design strategy for the development of advanced electrode materials in energy storage fields.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"273 - 279"},"PeriodicalIF":2.6,"publicationDate":"2026-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular Beam Epitaxial Growth of α-In2Se3 Thin Films on Hexagonal Boron Nitride and Device Applications","authors":"Imhwan Kim,&nbsp;Wonwoo Suh,&nbsp;Jonghwa Kim,&nbsp;Myungjun Cha,&nbsp;Eunsu Lee,&nbsp;Seongbeom Kim,&nbsp;Hyunyong Choi,&nbsp;Celesta S. Chang,&nbsp;Gyu-Chul Yi","doi":"10.1007/s13391-026-00627-6","DOIUrl":"10.1007/s13391-026-00627-6","url":null,"abstract":"<div><p>We report the molecular beam epitaxial growth and device applications of α-In₂Se₃ thin films on hexagonal boron nitride (<i>h</i>-BN). We employed a two-step growth approach to grow thin films. Electron microscopy reveals uniform surfaces and a heteroepitaxial relationship between α-In₂Se₃ and <i>h</i>-BN, even though the α-In₂Se₃/<i>h</i>-BN is highly lattice-mismatched. Furthermore, the electrical and optoelectrical characteristics of the α-In₂Se₃ layers were examined by fabricating corresponding field-effect transistors and photodetectors.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"280 - 287"},"PeriodicalIF":2.6,"publicationDate":"2026-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-026-00627-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on In-Situ Grown Graphene-Like Coated Copper Powder and Its Conductive Paste","authors":"Keliang Zhao,&nbsp;Chengcai Ye,&nbsp;Qing Wang,&nbsp;Ze Liu,&nbsp;Longlai Rao,&nbsp;Dalin Wang,&nbsp;Zhenguo Liu","doi":"10.1007/s13391-025-00626-z","DOIUrl":"10.1007/s13391-025-00626-z","url":null,"abstract":"<div><p>This study investigates the in-situ growth of graphene-like coated copper powder and its application in conductive pastes, with the aim of addressing the issue of reduced conductivity caused by copper powder oxidation in low-temperature cured electronic pastes, thereby improving the stability and long-term performance of the conductive paste. A graphene-like coating is synthesized on the surface of copper powder using an ascorbic acid-based method, followed by pyrolysis, significantly enhancing its oxidation resistance and electrical conductivity. The effects of process parameters—such as ascorbic acid dosage, pyrolysis temperature, and pyrolysis time—on the formation of the graphene-like coating were systematically studied. The structure and morphology of the coated copper powder were characterized using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), while its electrical conductivity was evaluated through resistivity measurements. The results indicate that a stable graphene-like coating can be in-situ formed on the copper powder surface when the ascorbic acid dosage is 5–10 times the theoretical minimum, the pyrolysis temperature is maintained at 400–450 °C, and the pyrolysis duration is 120 min, resulting in significantly lower resistivity compared to the uncoated copper powder. Further studies explored the application of the graphene-like coated copper powder in low-temperature cured conductive pastes, and its performance was compared to that of the original copper powder in paste preparation. Testing and analysis of the paste’s rheological behavior, printability, and electrical performance revealed that the graphene-like coated copper powder paste exhibits superior shear-thinning characteristics, printing uniformity, and conductivity stability when compared to the original copper powder paste. The experimental findings demonstrate that this coating technology significantly enhances the oxidation resistance and conductivity of copper powder, offering a promising material alternative for the development of low-temperature cured conductive pastes.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"251 - 263"},"PeriodicalIF":2.6,"publicationDate":"2026-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00626-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Integration of Ferroelectric and 2D Materials for Next-Generation High-performance Electronics","authors":"Jun Hoe Heo,&nbsp;Ji Min Park,&nbsp;Ho Won Jang","doi":"10.1007/s13391-025-00624-1","DOIUrl":"10.1007/s13391-025-00624-1","url":null,"abstract":"<div><p>The spontaneous polarization of ferroelectric materials enables nonvolatile behavior and the possibility of low-power logic operation through the negative capacitance effect, making ferroelectric field-effect transistors (FeFETs) attractive candidates for next-generation memory and logic applications. However, Si-based FeFETs suffer from significant limitations such as large hysteresis, short retention, limited endurance, primarily due to interfacial trap states and insufficient carrier density for polarization compensation. The adoption of two-dimensional (2D) semiconductors effectively addresses these issues by offering atomically clean interfaces, enhanced electrostatic control, and improved charge balance. As a result, the integration of ferroelectric materials with 2D materials has emerged as a promising strategy for realizing high-performance electronics. This review highlights recent advances in ferroelectric/2D heterostructures, focusing on two-terminal devices such as ferroelectric capacitors (FeCAPs) and ferroelectric tunnel junctions (FTJs), as well as three-terminal FeFETs. These device architectures are examined in terms of their applicability to nonvolatile memory and negative capacitance field-effect transistors (NC-FETs), with key device characteristics such as memory window, retention, low-power switching, and endurance discussed with material combinations and interface designs. The review aims to guide the development of scalable, reliable, and multifunctional ferroelectric devices through 2D integration.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"221 - 237"},"PeriodicalIF":2.6,"publicationDate":"2026-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Massive Synthesis in Vacuum of High Thermal Conductivity Boron Arsenide for Underfill Application","authors":"Bona Lee,&nbsp;Sangwoo Ryu","doi":"10.1007/s13391-025-00625-0","DOIUrl":"10.1007/s13391-025-00625-0","url":null,"abstract":"<div><p>The continuous miniaturization and increased integration density of semiconductor devices have intensified the demand for high thermal conductivity materials capable of efficiently dissipating heat generated within chips. Boron arsenide (BAs), predicted to exhibit an exceptionally high theoretical thermal conductivity of approximately 1000 W/m·K, has emerged as a promising next-generation thermal management material. However, studies on the synthesis of high-purity BAs powders and their applicability remain limited. In this work, BAs powder was synthesized via a solid-state reaction in vacuum, and the effects of annealing temperature and precursor molar ratio on phase formation and chemical composition were systematically investigated. Structural and compositional analysis revealed that annealing at 800 °C for 12 h with 2.02 mmol boron and 5.05 mmol arsenic yielded spherical, single-phase BAs with minimized B₁₂As₂ impurities and residual boron, representing the composition closest to the ideal 1:1 stoichiometry. Using the synthesized powder, BAs ceramics were fabricated via spark plasma sintering. Thermally stable ceramic discs without cracks were successfully obtained at 700 °C and 30 MPa, exhibiting a relatively low thermal conductivity of approximately 3.0 W/m·K at room temperature. When the synthesized powder was incorporated into epoxy for underfill applications, BAs/epoxy composites showed processable viscosities of 13–43 Pa·s, while their thermal conductivity increased from 0.250 to 0.416 W/m·K with increasing BAs filler content.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"157 - 165"},"PeriodicalIF":2.6,"publicationDate":"2026-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147336567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photocatalytic WO3/Amorphous Carbon Dots Composite Coatings Immobilized by Ultrasonic Spray on Glass Substrate","authors":"V. Raja Preethi,&nbsp;Sagarika Sahoo,&nbsp;Ryun Kyung Lee,&nbsp;Kee-Sun Lee","doi":"10.1007/s13391-025-00616-1","DOIUrl":"10.1007/s13391-025-00616-1","url":null,"abstract":"<div><p>Photocatalytic WO₃ materials with visible light responsiveness have attracted interest in eco-friendly wastewater treatment, antimicrobial applications, and indoor air purification. In this study, WO₃/amorphous carbon dot composite coatings were produced on glass substrates using an ultrasonic spray deposition followed by heat treatment, enabling scalable and cost-effective large-area immobilized product. The precursor suspension combined hydrothermally synthesized WO₃ nano cubes with citric acid (CA), which served as a carbon source. Drying and heat treatment induced carbonization of CA, resulting in a crack-free, adherent composite thin coatings comprising WO₃ nano cubes interconnected by localized amorphous carbon dots (aCDs), as confirmed by Raman, FTIR, and HRTEM analyses. The carbonaceous bridges enhanced interparticle connectivity and coating adhesion to the substrate. Photocatalytic degradation of methylene blue under visible light (Xenon lamp) achieved 95% reduction in 200 min in basic pH. Photoluminescence spectroscopy confirmed synergistic interaction between WO_3, and carbon dots promotes charge separation improving photocatalytic efficiency. Since the catalysts are stuck on the glass substrate surface compactly, the reusability becomes easier. This immobilized WO₃/Carbon composite coating demonstrates promising potential for environmentally sustainable photocatalytic applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"146 - 156"},"PeriodicalIF":2.6,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147339719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and Xylene Gas Sensing Performances of SnO2/Fe2(MoO4)3 Nanocomposites","authors":"Yiyue Wang,&nbsp;Miao Hu,&nbsp;Ping Fu,&nbsp;Zhe Chen,&nbsp;Zhidong Lin,&nbsp;Liming Liu","doi":"10.1007/s13391-025-00623-2","DOIUrl":"10.1007/s13391-025-00623-2","url":null,"abstract":"<div><p>SnO₂/Fe₂(MoO₄)₃ nanocomposites were prepared by two-step hydrothermal processes. The SnO₂/Fe₂(MoO₄)₃ nanocomposite with a molar ratio of Sn to Fe of 1.4 consisted of rutile-type SnO₂ and monoclinic Fe₂(MoO₄)₃, and the crystallite sizes of SnO₂ and Fe₂(MoO₄)₃ in the composite were about 8 nm. The sensor based on the SnO₂/Fe₂(MoO₄)₃ nanocomposite shows a high response of 116.7 to 100 ppm xylene at 200 °C, which was 9.8 times higher than the pure SnO₂ sensor. The SnO₂/Fe₂(MoO₄)₃ sensor exhibited excellent response, low detection limit, and selectivity to xylene compared with the SnO₂ sensor. The improved gas-sensing of the SnO₂/Fe₂(MoO₄)₃ nanocomposite was ascribed to the tiny nanocrystallites and large specific surface area and the good catalysis and absorption of Fe₂(MoO₄)₃ to xylene.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"288 - 295"},"PeriodicalIF":2.6,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silver Cold Welding Integration and Back Reflector Performance for Optoelectronic Applications","authors":"Yongmin Baek,&nbsp;Young Ho Chu,&nbsp;Jongchan Ryu,&nbsp;Hongju Kim,&nbsp;Taehoon Kim,&nbsp;Seongheon Kim,&nbsp;Yun Seog Lee","doi":"10.1007/s13391-025-00619-y","DOIUrl":"10.1007/s13391-025-00619-y","url":null,"abstract":"<p>Metal back reflectors enhance photodetector efficiency by enabling photon recycling, where unabsorbed photons reflect back through the active layer. Gold has been the standard material despite substantial optical losses in the visible spectrum due to interband transitions. Silver exhibits superior reflectance exceeding 95% across visible to infrared wavelengths but suffers from oxidation susceptibility that has limited its implementation. Here we show that direct silver wafer bonding using Ti/Pt/Ag stacks achieves reliable heterogeneous integration while maintaining exceptional optical properties. The bonding occurs at 200 °C through atomic interdiffusion, with platinum acting as an effective diffusion barrier. Silver reflectors maintain low roughness below 1.68 nm and over 95% reflectance after thermal processing at 350 °C. Transfer matrix calculations reveal that silver reduces parasitic metal absorption by up to 60 percentage points compared to gold in the blue spectrum. This translates to quantum efficiency improvement for InGaN photodetectors reaching a maximum of 18% at 40° incidence angle and consistent advantages across all wavelengths. These findings establish silver direct bonding as a superior alternative for photodetectors and thermophotovoltaic devices.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"264 - 272"},"PeriodicalIF":2.6,"publicationDate":"2025-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly Photosensitive Phototransistor Based on CsPbBr3 NCs-Graphene Mixed Channel","authors":"Yongli Che,&nbsp;Xiaolong Cao,&nbsp;Jianquan Yao","doi":"10.1007/s13391-025-00622-3","DOIUrl":"10.1007/s13391-025-00622-3","url":null,"abstract":"<div><p>Cesium lead halide perovskites (CsPbX₃, X = Cl, Br, I) nanocrystals (NCs) with high absorption coefficient are recognized as advantageous active materials for photodetectors. Here, a solution-based phototransistor using CsPbBr₃ NCs-graphene heterostructure as channel materials was fabricated and investigated. The CsPbBr₃ NCs-graphene hybrid phototransistor exhibited outstanding optoelectrical properties with high responsivity, external quantum efficiency and detectivity of 48 A/W, 36% and 1.5 × 10⁷ Jones under power density of 56 mW/cm² of 405 nm light. Moreover, the device showed an excellent photo-switching stability and reproducibility as well as fast response with rise/fall times of 7.4/26.8 ms, respectively. The high sensitivity of the phototransistor results from the large absorption of incoming photons in CsPbBr₃ NCs, the high carrier mobility of graphene, and the gate-modulated contact barrier height at CsPbBr₃ NCs-graphene interface. This generic strategy by combining photosensitive materials and 2D materials into heterostructures to fabricate phototransistor paves a route to the application of inexpensive, highly sensitive, and integrable devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"238 - 242"},"PeriodicalIF":2.6,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Advances in Hafnium Oxide-Based Ferroelectric Thin-Film Transistors with Oxide Semiconductor Channels","authors":"Jaejoon Kim,&nbsp;Joonyong Kim,&nbsp;Hyeong Seok Choi,&nbsp;Dong Hee Han,&nbsp;Hyun Woo Jeong,&nbsp;Younghwan Lee,&nbsp;Min Hyuk Park","doi":"10.1007/s13391-025-00621-4","DOIUrl":"10.1007/s13391-025-00621-4","url":null,"abstract":"<div><p>Ferroelectric thin-film transistor (FeTFT) incorporating hafnium oxide-based ferroelectric layers and oxide semiconductor channels has garnered significant attention for its potential in next-generation memory and storage applications within classical computing and emerging computing technologies such as in-memory computing and neuromorphic computing. Their characteristic nonvolatility, scalability, and high power-efficiency render FeTFT suitable for emerging data-intensive and low-power electronic applications. However, several limitations, such as insufficient polarization compensation coming from absence of minority carriers, interfacial instability owing to defects, and performance degradation under aggressive scaling, hinder their practical deployment in semiconductor industry. This review provides a critical examination of recent material and structural engineering strategies devised to overcome the aforementioned challenges. These include channel properties modulation to improve carrier mobility and efficiency of polarization-driven channel conductance modulation, incorporating interfacial layers to suppress trap states and oxygen vacancies and optimizing gate stack to enhance electrostatic control. The implications of these approaches on performance metrics including memory window, endurance, and retention characteristics are systematically discussed, alongside insights into their impact on ferroelectric switching dynamics and reliability. This work aims to offer a comprehensive perspective on the progress and future direction of oxide semiconductor-based FeTFT toward their integration into multifunctional, memory-centric electronics.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><img></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"195 - 220"},"PeriodicalIF":2.6,"publicationDate":"2025-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}