Electronic Materials Letters最新文献

{"title":"Synthesis and Properties of Branched-Crosslinked Poly(aryl piperidinium) Anion Exchange Membranes","authors":"Yuanyuan Zhou,&nbsp;Qingyang Xiao,&nbsp;Wenjie Li,&nbsp;Song Li,&nbsp;Shuchun Yu,&nbsp;Pengyan Guo","doi":"10.1007/s13391-025-00590-8","DOIUrl":"10.1007/s13391-025-00590-8","url":null,"abstract":"<div><p>As a promising sustainable energy conversion technology, anion exchange membrane fuel cells (AEMFCs) have attracted substantial research attention due to their eco-friendly characteristics, cost advantages, and potential for high efficiency. The advancement of these systems, however, remains fundamentally limited by the challenge of optimizing the critical trade-off between ionic conductivity and dimensional stability in anion exchange membranes (AEMs). This investigation proposes a novel membrane architecture combining ether-free polymer matrices with piperidinium cationic moieties to address chemical durability concerns. A series of cross-linked poly(p-triphenylpyridine) membranes were successfully fabricated through optimized Friedel-Crafts alkylation processes, incorporating pyridine-derived branching structures alongside conventional quaternary ammonium cross-linkers. The optimized QAPTTP-40% membrane exhibits outstanding electrochemical properties, achieving temperature-enhanced ionic conductivity of 116.2 mS cm⁻¹ at 80 °C through cooperative effects of branched morphology and cross-linked framework. Extended alkaline stability testing (15 days in 2 M NaOH at 80 °C) revealed exceptional chemical resilience with 85.1% conductivity retention. Structural characterization demonstrated advantageous material properties including an elevated ion exchange capacity of 2.94 mmol g⁻¹ coupled with robust mechanical strength (39.4 MPa tensile strength at ambient conditions). The synergistic combination of efficient ion transport pathways, superior alkaline durability, and mechanical robustness establishes this innovative AEM design as a competitive platform for next-generation fuel cell development. These findings provide critical insights into the rational design of high-performance anion exchange membranes through molecular engineering of polymer architectures and cationic group selection.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"726 - 741"},"PeriodicalIF":2.6,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sulfur Extraction for Stoichiometry Control of Cobalt Sulfides by Reducing Gas Annealing","authors":"In-Kyoung Ahn,&nbsp;Intae Kim,&nbsp;Young-Chang Joo","doi":"10.1007/s13391-025-00589-1","DOIUrl":"10.1007/s13391-025-00589-1","url":null,"abstract":"<div><p>In this study, we propose an anion vacancy engineering process for CoS₂-based nanomaterials using carbon monoxide (CO) thermal treatment. This process enables precise control over sulfur vacancy formation and phase transitions while preserving structural integrity through the tuning of variables such as temperature, annealing time, and gas composition.</p><p>Notably, changes in the oxidation state of cobalt and the chemical state of sulfur were systematically observed as a function of the reaction conditions, confirming that the controlled structural evolution of cobalt sulfides was mediated by selective sulfur extraction. Moreover, the values from thermodynamic calculations were in good agreement with the experimental results, demonstrating that the sulfur extraction process follows a thermodynamically favorable pathway.</p><p>The versatility of this approach extends beyond specific materials or processing conditions and can be applied to a wide range of transition metal compounds. Additionally, the process demonstrates excellent scalability, as it is not constrained by sample quantity. The ability to finely control structural and chemical properties highlights the applicability of this method to various fields where defect engineering is critical, such as electrocatalysis and energy storage devices.</p><p>In particular, sulfur-deficient CoS₂ demonstrated superior electrocatalytic performance, with an overpotential of only 327 mV at 10 mA cm^− 2 for the oxygen evolution reaction, outperforming conventional noble metal catalysts by approximately 60 mV. This result underscores the practical value and broad applicability of the proposed process.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"715 - 725"},"PeriodicalIF":2.6,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Review of Field-Effect Transistors Based on Three-Dimensional, Two-Dimensional, and Double Halide Perovskites","authors":"Hyojung Kim","doi":"10.1007/s13391-025-00588-2","DOIUrl":"10.1007/s13391-025-00588-2","url":null,"abstract":"<div><p>Halide perovskites are gaining attention as potential channel materials for field-effect transistors utilized in artificial intelligence hardware, computing arrays, and sensor grids. The ABX₃ lattice exhibits a remarkable ability to accommodate various cation and halide substitutions, effectively tuning the optical gap, minimizing defect formation, and enabling solution processing at temperatures below those that induce plastic deformation. Simultaneously, mobile ions within the lattice may drift when an electric field is applied, leading to hysteresis and threshold shifts that complicate reliable operation. This review examines three structural families: three-dimensional (3D), two-dimensional (2D), and lead-free double perovskites, and connects their composition and microstructure to electronic transport. The incorporation of mixed A-site or B-site alloys leads to an increase in vacancy formation energies. The ongoing development of FETs presents opportunities to transform the future of electronic systems. This advancement has the potential to significantly enhance the capabilities of electronic systems, making them more efficient, stable, and scalable while also boosting overall performance.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"650 - 666"},"PeriodicalIF":2.6,"publicationDate":"2025-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of Hard-magnetic Properties in Mn-Al-Cr Substituted M-type Hexaferrite","authors":"Il-Ho Yoon,&nbsp;Young-Min Kang","doi":"10.1007/s13391-025-00586-4","DOIUrl":"10.1007/s13391-025-00586-4","url":null,"abstract":"<div><p>This study investigates the magnetic properties of isotropic sintered magnets based on M-type hexaferrite SrFe₁₂O₁₉, enhanced through multi-cation substitution with Al, Cr, and Mn. M-type hexaferrite samples with the general formula SrFe_{12 − 2<i>x</i>}Al_<i>x</i>Cr_<i>x</i>O₁₉ (<i>x</i> = 0–0.3) were synthesized via a solid-state reaction method to investigate the effects of Al–Cr substitution on the structural and magnetic properties. X-ray diffraction (XRD) analysis confirmed the formation of a single-phase M-type hexaferrite with minor traces of Fe₂O₃ in some samples. Magnetic characterization showed that coercivity (H_C) increased while remanent magnetization (4πM_r) decreased with increasing <i>x</i>, exhibiting a typical trade-off behavior. Among the compositions, <i>x</i> = 0.2 exhibited the most balanced magnetic properties. Based on this, further substitutions with Mn, Co, La, and Ce were introduced, and Mn substitution slightly enhanced H_C. Optimization of sintering additives and temperature revealed that the composition SrFe_11.5Mn_0.1Al_0.2Cr_0.2O₁₉, sintered with 1 wt% CaCO₃ + 1 wt% SiO₂ at 1230 °C, exhibited the best performance with 4πM_r = 2207 G and H_C = 5304 Oe. The results demonstrate that simultaneous multi-cation substitution and sintering condition control can significantly enhance the hard-magnetic properties of M-type hexaferrites.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"697 - 706"},"PeriodicalIF":2.6,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Advances in Ligand Engineering for Stable Halide Perovskite Light-Emitting Diodes","authors":"Sol Lee,&nbsp;Hae Jin Jo,&nbsp;Sang Mok Han,&nbsp;Young Ju Kim,&nbsp;Soo Young Kim","doi":"10.1007/s13391-025-00587-3","DOIUrl":"10.1007/s13391-025-00587-3","url":null,"abstract":"<div><p>Lead halide perovskites have significant potential as promising materials for a wide range of optoelectronic applications, including solar cells, light-emitting diodes, and photodetectors, due to their outstanding optical and electrical properties. Despite these remarkable properties, their intrinsic structural and environmental instability remains a major barrier to commercialization, as they are highly susceptible to degradation under heat, light, moisture, and bias. To address these challenges, extensive efforts have been devoted to improving the stability of perovskite materials through ligand engineering. In particular, diverse organic ligands with carefully tailored molecular structures have been developed to passivate surface defects and enhance structural robustness. This review highlights recent progress in ligand engineering strategies, focusing on how the structural design of ligands, specifically the number of functional groups within each ligand and the number of ligands coordinating with the perovskite surface, can effectively suppress degradation pathways and improve device performance. Based on these criteria, ligands are categorized into monodentate, polydentate, and dual-ligand systems. This classification provides a framework for systematically exploring ligand–perovskite interactions, ultimately contributing to the realization of durable, efficient, and commercially viable perovskite-based optoelectronic devices.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"633 - 649"},"PeriodicalIF":2.6,"publicationDate":"2025-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of Anodic Aluminum Oxide and Cu Electrode and Improvement of Its Mechanical and Electrical Properties","authors":"Chae Yoon Kim,&nbsp;Min-Jeong Lee,&nbsp;Eun Soo Shim,&nbsp;Se Rin Park,&nbsp;Jae-Hong Lim","doi":"10.1007/s13391-025-00584-6","DOIUrl":"10.1007/s13391-025-00584-6","url":null,"abstract":"<div><p>The increasing demand for miniaturized and high-performance integrated circuits requires efficient interposer technologies for advanced semiconductor packaging. In this study, anodic aluminum oxide (AAO) was investigated as a potential interposer substrate owing to its excellent electrical insulation and low dielectric constant. A Pd-TiO₂ ink catalyst was applied to enhance the dielectric performance while suppressing copper ion penetration during the electroless Cu deposition. Compared to conventional Sn-Pd catalysts, the application of Pd-TiO₂ improved the dielectric stability and interfacial reliability. Subsequent Cu electroplating using nitrotetrazolium blue chloride (NTBC) as a leveling additive enabled uniform, void-free through-hole filling while minimizing surface overplating, and demonstrated improved void suppression compared to conventional multi-additive systems. Morphological and electrical characterizations confirmed the effectiveness of this single-additive method. This integrated approach combining Pd-TiO₂ catalysis and NTBC-assisted plating demonstrates a viable route toward AAO-based interposers with enhanced dielectric and metallization properties. These findings support the feasibility of using AAO substrates for next-generation semiconductor packages that require high signal integrity and thermal reliability.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div><div><p>Comparison of catalyst and additive effects on copper filling in AAO interposers. OM images of Cu deposition using <b>a</b> commercial Sn-Pd catalyst, <b>b</b> Pd-TiO₂ catalyst, <b>c</b> NTBC-based single-additive filling after 64 h, and <b>d</b> three-additive filling after 9 h.</p></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"667 - 678"},"PeriodicalIF":2.6,"publicationDate":"2025-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Electromagnetic Shielding Via Sequential Exfoliation of NbSe2 Thin Film: Structural and Electrical Optimization","authors":"Won-Jin Kim,&nbsp;Kun-Woo Nam,&nbsp;Sung-Hoon Park","doi":"10.1007/s13391-025-00585-5","DOIUrl":"10.1007/s13391-025-00585-5","url":null,"abstract":"<div><p>This study investigates the impact of sequential exfoliation on the structural, electrical, and electromagnetic interference (EMI) shielding properties of NbSe₂ thin films. Sequential exfoliation yields two distinct films: the 1st, derived from the initial exfoliation, and the 2nd, obtained from further exfoliation of the residual material. Comparative analysis reveals that the 2nd film significantly enhanced total shielding effectiveness in the 8.2–12.4 GHz range, primarily due to its superior absorption shielding effectiveness. This enhancement is attributed to forming a highly uniform, laminated two-dimensional structure, which optimizes electrical conductivity and promotes effective electromagnetic wave dissipation through the skin effect. In contrast, the 1st film contains structural defects and residual oxides, which disrupt conductive pathways and reduce overall shielding efficiency. The denser morphology of the 2nd film facilitates repeated internal reflections, leading to greater energy absorption, whereas the irregular structure of the 1st film limits absorption efficiency.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"707 - 714"},"PeriodicalIF":2.6,"publicationDate":"2025-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"X-ray Irradiation Induced Near-Infrared Persistent Luminescence from Li2Ge7O15:Cr3+","authors":"Xiaobin Liao,&nbsp;Wenli Shi,&nbsp;Zewen Liu,&nbsp;Runyao Liu,&nbsp;Jiaxu Zhang,&nbsp;Xiaoyan Fu,&nbsp;Hongwu Zhang","doi":"10.1007/s13391-025-00583-7","DOIUrl":"10.1007/s13391-025-00583-7","url":null,"abstract":"<div><p>This study demonstrates the X-ray-activated near-infrared persistent luminescence in Li₂Ge₇O₁₅:Cr³⁺ phosphors by the high-temperature solid-phase method. The influence of Cr³⁺ doping concentration on the structure, morphology and luminescent characteristics of the synthesized material was systematically investigated through X-ray diffraction (XRD), scanning electron microscopy (SEM), fluorescence spectroscopy, and persistent luminescence spectral analysis. The XRD result showed that the synthesized samples were pure. Under X-ray irradiation, the sample Li₂Ge₇O₁₅:Cr³⁺ exhibited near-infrared persistent luminescence and photo stimulated luminescence. The photoluminescence and afterglow emission peaks were located at 699.8 nm, which was due to the ²E→⁴A₂ of Cr³⁺. The optimal Cr³⁺ doping concentration was determined to be 0.05 %, at which the material demonstrated remarkable persistent luminescence performance. Notably, even if exposed to X-ray irradiation only for 5 s, the sample maintained exceptional near-infrared persistent emission characteristics lasting over 30 minutes. Furthermore, the material exhibited exceptional photostimulated luminescence (PSL) characteristics, with its near-infrared afterglow intensity being remarkably amplified under 980 nm laser irradiation. Thermoluminescence (TL) spectral analysis revealed the existence of multiple discrete trap energy levels within the host matrix, whose activation behavior was dependent on the excitation source. Under X-ray irradiation, the sample generated an additional effective trap level, which was more conducive to storing excitation energy. These results suggested that Li₂Ge₇O₁₅:Cr³⁺ was a potential X-ray-induced near-infrared persistent luminescent material.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"688 - 696"},"PeriodicalIF":2.6,"publicationDate":"2025-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improvement in Memory Operation of 2T0C DRAM Cells via Double-Layered InGaZnO Active Channel and Geometry Modulation","authors":"Sang Han Ko,&nbsp;Sung-Min Yoon","doi":"10.1007/s13391-025-00582-8","DOIUrl":"10.1007/s13391-025-00582-8","url":null,"abstract":"<div><p>To enhance the memory characteristics of the 2-transistor 0-capacitor (2T0C) DRAM cell, the double-layer (DL) InGaZnO channel was strategically introduced and the active geometry was optimally modulated. The DL channel, fabricated by modulating the oxygen partial pressure during RF sputtering, forms a heterojunction interface that introduces an additional conduction path, thereby significantly enhancing the device performance of the transistor. In memory operations, 2T0C DRAM cell employing the DL configuration exhibited more than twice the write speed, reaching a storage node voltage (V_SN) of 0.8 V within 4 µs, compared to 10 µs for single-layer (SL) counterpart under identical charging conditions. Additionally, the optimal determination of the active geometry in transistors has been demonstrated to enhance charge storage efficiency and minimize V_SN degradation. As a consequence of the enhanced positive-bias temperature stress stability, the DL device exhibited a data retention time of 44.3 s at 80 °C, which is approximately four times longer than that of the SL counterpart (11.5 s) with identical geometry. These findings confirm that the combined implementation of a DL IGZO channel and optimized device geometry provides an effective strategy for enhancing both the performance and reliability of 2T0C DRAM cell architectures.</p><h3>Graphic Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"679 - 687"},"PeriodicalIF":2.6,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Progress in Resistive Switching Memory Devices Covering Metal Oxides, Polymers, Bioinspired Materials, and Halide Perovskites","authors":"Hyojung Kim","doi":"10.1007/s13391-025-00579-3","DOIUrl":"10.1007/s13391-025-00579-3","url":null,"abstract":"<div><p>Recent developments in emerging memory technologies have increasingly highlighted resistive switching (RS) devices, which offer nonvolatile performance, the potential for random data access, simple fabrication, and a streamlined structural design. Owing to these advantages, researchers are now investigating a variety of materials to realize effective RS properties. This review comprehensively examines the latest progress in RS memory devices, focusing on metal oxides, polymers, bioinspired compounds, and halide perovskites, and elucidating their distinct attributes. By integrating key studies, the discussion links the specialized characteristics of these materials to their applicability in memory devices and evaluates innovative approaches and ultimately underscoring the substantial promise of these emerging technologies. Interdisciplinary research efforts and recent investigations further affirm the remarkable transformative potential of RS devices in next-generation electronics.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 4","pages":"487 - 503"},"PeriodicalIF":2.6,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}