Comparative Review of Field-Effect Transistors Based on Three-Dimensional, Two-Dimensional, and Double Halide Perovskites

IF 2.6 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2025-08-09 DOI:10.1007/s13391-025-00588-2

Hyojung Kim

{"title":"Comparative Review of Field-Effect Transistors Based on Three-Dimensional, Two-Dimensional, and Double Halide Perovskites","authors":"Hyojung Kim","doi":"10.1007/s13391-025-00588-2","DOIUrl":null,"url":null,"abstract":"<div><p>Halide perovskites are gaining attention as potential channel materials for field-effect transistors utilized in artificial intelligence hardware, computing arrays, and sensor grids. The ABX<sub>3</sub> lattice exhibits a remarkable ability to accommodate various cation and halide substitutions, effectively tuning the optical gap, minimizing defect formation, and enabling solution processing at temperatures below those that induce plastic deformation. Simultaneously, mobile ions within the lattice may drift when an electric field is applied, leading to hysteresis and threshold shifts that complicate reliable operation. This review examines three structural families: three-dimensional (3D), two-dimensional (2D), and lead-free double perovskites, and connects their composition and microstructure to electronic transport. The incorporation of mixed A-site or B-site alloys leads to an increase in vacancy formation energies. The ongoing development of FETs presents opportunities to transform the future of electronic systems. This advancement has the potential to significantly enhance the capabilities of electronic systems, making them more efficient, stable, and scalable while also boosting overall performance.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"650 - 666"},"PeriodicalIF":2.6000,"publicationDate":"2025-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-025-00588-2","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Halide perovskites are gaining attention as potential channel materials for field-effect transistors utilized in artificial intelligence hardware, computing arrays, and sensor grids. The ABX₃ lattice exhibits a remarkable ability to accommodate various cation and halide substitutions, effectively tuning the optical gap, minimizing defect formation, and enabling solution processing at temperatures below those that induce plastic deformation. Simultaneously, mobile ions within the lattice may drift when an electric field is applied, leading to hysteresis and threshold shifts that complicate reliable operation. This review examines three structural families: three-dimensional (3D), two-dimensional (2D), and lead-free double perovskites, and connects their composition and microstructure to electronic transport. The incorporation of mixed A-site or B-site alloys leads to an increase in vacancy formation energies. The ongoing development of FETs presents opportunities to transform the future of electronic systems. This advancement has the potential to significantly enhance the capabilities of electronic systems, making them more efficient, stable, and scalable while also boosting overall performance.

Graphical Abstract

查看原文本刊更多论文

基于三维、二维和双卤化物钙钛矿的场效应晶体管的比较综述

卤化物钙钛矿作为用于人工智能硬件、计算阵列和传感器网格的场效应晶体管的潜在通道材料正受到关注。ABX3晶格表现出适应各种阳离子和卤化物取代的卓越能力，有效地调节光学间隙，最大限度地减少缺陷的形成，并使溶液加工在低于诱发塑性变形的温度下进行。同时，当施加电场时，晶格内的移动离子可能会漂移，导致迟滞和阈值移动，从而使可靠的操作复杂化。本文综述了三个结构家族：三维（3D）、二维（2D）和无铅双钙钛矿，并将它们的组成和微观结构与电子输运联系起来。混合a位或b位合金的掺入导致空位形成能的增加。场效应管的持续发展为改变电子系统的未来提供了机会。这一进步有可能显著增强电子系统的能力，使它们更高效、稳定和可扩展，同时也提高了整体性能。图形抽象

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.