{"title":"包括金属氧化物、聚合物、生物激发材料和卤化物钙钛矿在内的阻性开关存储器件的最新进展","authors":"Hyojung Kim","doi":"10.1007/s13391-025-00579-3","DOIUrl":null,"url":null,"abstract":"<div><p>Recent developments in emerging memory technologies have increasingly highlighted resistive switching (RS) devices, which offer nonvolatile performance, the potential for random data access, simple fabrication, and a streamlined structural design. Owing to these advantages, researchers are now investigating a variety of materials to realize effective RS properties. This review comprehensively examines the latest progress in RS memory devices, focusing on metal oxides, polymers, bioinspired compounds, and halide perovskites, and elucidating their distinct attributes. By integrating key studies, the discussion links the specialized characteristics of these materials to their applicability in memory devices and evaluates innovative approaches and ultimately underscoring the substantial promise of these emerging technologies. Interdisciplinary research efforts and recent investigations further affirm the remarkable transformative potential of RS devices in next-generation electronics.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 4","pages":"487 - 503"},"PeriodicalIF":2.6000,"publicationDate":"2025-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recent Progress in Resistive Switching Memory Devices Covering Metal Oxides, Polymers, Bioinspired Materials, and Halide Perovskites\",\"authors\":\"Hyojung Kim\",\"doi\":\"10.1007/s13391-025-00579-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Recent developments in emerging memory technologies have increasingly highlighted resistive switching (RS) devices, which offer nonvolatile performance, the potential for random data access, simple fabrication, and a streamlined structural design. Owing to these advantages, researchers are now investigating a variety of materials to realize effective RS properties. This review comprehensively examines the latest progress in RS memory devices, focusing on metal oxides, polymers, bioinspired compounds, and halide perovskites, and elucidating their distinct attributes. By integrating key studies, the discussion links the specialized characteristics of these materials to their applicability in memory devices and evaluates innovative approaches and ultimately underscoring the substantial promise of these emerging technologies. Interdisciplinary research efforts and recent investigations further affirm the remarkable transformative potential of RS devices in next-generation electronics.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"21 4\",\"pages\":\"487 - 503\"},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2025-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-025-00579-3\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-025-00579-3","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Recent Progress in Resistive Switching Memory Devices Covering Metal Oxides, Polymers, Bioinspired Materials, and Halide Perovskites
Recent developments in emerging memory technologies have increasingly highlighted resistive switching (RS) devices, which offer nonvolatile performance, the potential for random data access, simple fabrication, and a streamlined structural design. Owing to these advantages, researchers are now investigating a variety of materials to realize effective RS properties. This review comprehensively examines the latest progress in RS memory devices, focusing on metal oxides, polymers, bioinspired compounds, and halide perovskites, and elucidating their distinct attributes. By integrating key studies, the discussion links the specialized characteristics of these materials to their applicability in memory devices and evaluates innovative approaches and ultimately underscoring the substantial promise of these emerging technologies. Interdisciplinary research efforts and recent investigations further affirm the remarkable transformative potential of RS devices in next-generation electronics.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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