Electronic Materials Letters最新文献

{"title":"Enhanced Photodetection in Slanted Silicon Nanowire Array via Spin-On-Glass-Based Surface Passivation","authors":"Hayoung Jang,&nbsp;Youngmin Kim","doi":"10.1007/s13391-026-00638-3","DOIUrl":"10.1007/s13391-026-00638-3","url":null,"abstract":"<div><p>Slanted silicon (Si) nanowire (NW) arrays have emerged as a promising platform for high-performance photodetectors due to their large surface-to-volume ratio, intrinsic anti-reflection characteristics and asymmetric geometry that enables diverse optical mode coupling. Although the slanted geometry inherently provides enhanced light trapping capability, its practical implementation has been hindered by challenges in achieving uniform and effective surface passivation, an issue far less problematic in vertically standing NW arrays. Here, we present an effective silicon oxide (SiO_x) passivation strategy for slanted Si NW arrays using spin-on-glass (SOG) technology, leading to an improved optical absorption. The inter-wire gaps were filled with SOG and subsequently annealed to convert the material into SiO_x, thereby uniformly passivating the NW surfaces. Finite-difference time-domain (FDTD) simulations reveal that the uniformly formed SiO_x layer enhances optical absorption by ~ 70% at 1060 nm, attributed to an increased effective refractive index within the NW array, which improves accommodation of the longer-wavelength incident light inside the NW array. Experimentally, the passivated NW array exhibits a markedly reduced dark current of 2.6 µA at 3 V, compared with 133 µA for unpassivated device, along with an improved responsivity of ~ 17 mA/W at 1050 nm, in contrast to ~ 6 mA/W observed in the unpassivated device. This work demonstrates a simple yet effective passivation route for slanted NW architectures, offering a scalable pathway to enhance light absorption and stability in Si-based photodetection applications.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 5","pages":"403 - 408"},"PeriodicalIF":3.1,"publicationDate":"2026-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148783314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Composition-Engineered Shape Memory Polymer Stamps for Robust Micro-Transfer Printing of µLEDs","authors":"Mingi Chai,&nbsp;Hyun Tak,&nbsp;Youngmin Kim","doi":"10.1007/s13391-026-00635-6","DOIUrl":"10.1007/s13391-026-00635-6","url":null,"abstract":"<div><p>Micro-transfer printing (μTP) technology, which relies on tunable and reversible adhesives interfaces, enables precise integration of microscale devices onto heterogeneous substrates for advanced electronic and photonic applications. Shape memory polymers (SMPs) have emerged as promising stamp materials for µTP since their adhesion strength can be reversibly and easily tuned through thermal activation. Although composition is a key parameter governing the mechanical and adhesion properties of SMPs, the influence of composition ratio between major components has been rarely investigated, particularly in relation to the pick-up and release behavior of microscale devices. Here, we present an investigation of the composition-dependent pick-up and release characteristics of SMP stamps. Three SMPs with varying stearyl acrylate (SA) and urethane diacrylate ratios were synthesized and evaluated both theoretically and experimentally, revealing that SA-rich compositions exhibit superior adhesion contrast and μTP performance. By applying the optimized SMP stamp to the transfer of micro-light emitting diodes, we experimentally demonstrate robust and repeatable device transfer. Our findings pave the way for reliable heterogeneous integration of next-generation microscale electronic and photonic devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 4","pages":"356 - 362"},"PeriodicalIF":3.1,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanism and Evaluation of Two-Terminal Ferroelectric-Based Memristive/Memcapacitive Devices","authors":"Hyeon Jin Ahn,&nbsp;Hyung Jin Shin,&nbsp;Na Kyung Yu,&nbsp;Jung Ho Yoon","doi":"10.1007/s13391-026-00634-7","DOIUrl":"10.1007/s13391-026-00634-7","url":null,"abstract":"<div><p>Ferroelectric-based devices are attracting renewed interest as promising building blocks for next-generation non-volatile memory and neuromorphic computing. This review focuses on two-terminal ferroelectric memristive and memcapacitive devices, discussing their material foundations, device physics, and implications at the array level. After briefly introducing classical perovskite ferroelectrics, we highlight the emergence of HfO₂-based, particularly Hf_xZr_1−xO₂ (HZO), ferroelectrics, which combine robust polarization with excellent complementary metal-oxide-semiconductor (CMOS) compatibility and aggressive thickness scaling. We then classify representative ferroelectric devices, including ferroelectric tunnel junctions, ferroelectric diodes, and ferroelectric-based memcapacitive structures, and compare their operation mechanisms along with the resulting device characteristics. From a device-level perspective, ferroelectric memristive devices are compared with conventional two-terminal memories, such as resistive random-access memories (ReRAMs), phase-change memories (PCMs), and magnetic tunnel junctions (MTJs), in terms of energy efficiency, switching speed, multilevel capability, and reliability. We further discuss the strengths of ferroelectric devices, with an emphasis on their suitability for crossbar-based in-memory and neuromorphic computing. Building on this, we introduce ferroelectric memcapacitive devices as a distinct class that differs from memristive ferroelectric devices. This class features polarization-controlled capacitance and displacement-current-based operation, yielding nearly zero static power consumption and intrinsically suppressing direct current (DC) leakage and IR drop. These characteristics offer distinct advantages for energy-efficient vector-matrix multiplication. By consolidating material, device, and array-level perspectives, this review outlines key performance trade-offs and design guidelines for advancing ferroelectric memristive and memcapacitive technologies toward scalable, low-power computing hardware.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 4","pages":"297 - 321"},"PeriodicalIF":3.1,"publicationDate":"2026-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Cobalt Binary Compounds for Advanced Interconnect Materials","authors":"Gyungho Maeng,&nbsp;Yeonghun Lee","doi":"10.1007/s13391-026-00632-9","DOIUrl":"10.1007/s13391-026-00632-9","url":null,"abstract":"<div><p>The industrial standard copper (Cu) interconnects face a substantial resistivity increase at thinner linewidths, posing a well-known challenge to limit overall device performance. To address this issue, we have evaluated the potential properties of cobalt (Co) based binary compounds as replacements for Cu. Co is considered as a promising alternative due to its potential for enhanced reliability and low resistivity at sub-nanoscale dimensions. Furthermore, the combination of elements provides a possibility to engineer novel properties, transcending the limitations of elemental metals and expanding the search space for next-generation interconnects. In this study, a high-throughput screening method was used to identify several Co-based binary compounds with superior electronic transport and reliability at reduced thickness. The findings demonstrate that specific Co-based binary compounds hold significant potential to overcome the performance limitations of scaled interconnects.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 4","pages":"341 - 347"},"PeriodicalIF":3.1,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simple Fabrication and Electrical and Mechanical Characterization of Dumbbell-Like Pillar Structures for Vertical Device Applications","authors":"Hae-In Hwang,&nbsp;Minji Park,&nbsp;Ahyun Park,&nbsp;Seung-Hun Lee,&nbsp;Jihun Ha,&nbsp;Yeong-Eun Yoo,&nbsp;Eun-Chae Jeon,&nbsp;Jeong Hwan Kim","doi":"10.1007/s13391-026-00631-w","DOIUrl":"10.1007/s13391-026-00631-w","url":null,"abstract":"<div><p>A robust and scalable fabrication strategy is presented for three-dimensional dumbbell-like pillar nanostructures through the combination of columnar thin film engineering and selective wet etching A Ni/Cu/Ni multilayer was deposited by low-temperature magnetron sputtering, where lattice-controlled growth led to vertically aligned grain boundaries and well-defined columnar morphology. The inner Cu layers were selectively removed through top-down wet etching, while the outer Ni layers remained intact, forming voided 3D structures with increased surface area. XRF analysis confirmed a consistent Cu reduction rate of approximately 5.4% per minute, indicating controllable etching behavior. Electrical characterization demonstrated that the nanostructure geometry can be effectively tuned to optimize electrical performance while maintaining structural integrity. Mechanical properties assessed via sphero-conical nanoindentation confirmed that hardness and structural integrity were preserved, owing to the mechanical stability of the Ni framework and stress redistribution through the dumbbell-like geometry. The combination of vertical alignment, selective etchability, and mechanical durability highlights the potential of this approach for producing high–surface-area nanostructures with application-specific functionalities. The process is cost-effective and lithography-free, making it suitable for scalable fabrication of nanostructures with tunable properties. Potential applications include gas sensors, catalysis, and micro- or nanoelectronic devices where both electrical conductance and mechanical stability are required.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 4","pages":"393 - 402"},"PeriodicalIF":3.1,"publicationDate":"2026-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Competing Effects of Enhanced Density-of-States Effective Mass and Reduced Mobility on the Thermoelectric Properties of Ni-Doped Sb2Te3","authors":"Chanwoo Ju,&nbsp;Seungchan Seon,&nbsp;Gyujin Chang,&nbsp;Jaewoo Park,&nbsp;Seungwoo Ha,&nbsp;Yunjae Kim,&nbsp;Myoung Seok Kwon,&nbsp;Se Yun Kim,&nbsp;Sang-il Kim","doi":"10.1007/s13391-026-00629-4","DOIUrl":"10.1007/s13391-026-00629-4","url":null,"abstract":"<div><p>Sb₂Te₃ alloys are well-known <i>p</i>-type thermoelectric material exhibiting strong thermoelectric performance in the mid-temperature range, and Sb₂Te₃ composition serves as the parent compound for many of the highest-performing thermoelectric materials in the low-to-mid temperature range, including (Bi, Sb)₂Te₃ and In-doped Sb₂Te₃. This study systematically investigates the thermoelectric transport properties of Ni-doped Sb₂Te₃ alloys with nominal compositions of (Sb_1 − xNi_x)₂Te₃ (<i>x</i> = 0, 0.015, 0.03, 0.045, and 0.06). Ni substitution at Sb sites effectively increased the Hall carrier concentration from 5.41 × 10¹⁹ cm^− 3 (<i>x</i> = 0) to 8.41 × 10¹⁹ cm⁻³ (<i>x</i> = 0.06). Although the density-of-states effective mass (<i>m</i>_d^*) increased with Ni content, a substantial reduction in non-degenerate mobility led to an overall 20% decrease in the power factor. Regarding thermal transport, the reduction in lattice thermal conductivity was offset by a significant increase in electronic thermal conductivity, resulting in a net increase in total thermal conductivity. Consequently, the maximum thermoelectric figure of merit (<i>zT</i>) decreased from that of the pristine sample, with the lowest <i>zT</i> of 0.31 observed for the <i>x</i> = 0.06 sample at 300 K, a ~ 17% reduction. However, analysis based on the single parabolic band (SPB) model revealed that the enhanced <i>m</i>_d^* at higher doping levels holds significant potential. By optimizing the carrier concentration to ~ 1.13 × 10¹⁹ cm^− 3, a peak <i>zT</i> of 0.67 was predicted for the <i>x</i> = 0.06 composition, suggesting a clear pathway for future performance enhancement.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 4","pages":"371 - 380"},"PeriodicalIF":3.1,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of Extreme Ultraviolet Pellicles Based on Yttrium Core with Amorphous Carbon Capping Layer","authors":"Kihun Seong,&nbsp;Hye-Young Kim,&nbsp;Yongkyung Kim,&nbsp;Hyeongkeun Kim,&nbsp;Won Jin Kim,&nbsp;Seungchan Moon,&nbsp;Jinho Ahn,&nbsp;Seul-Gi Kim,&nbsp;Hyun-Mi Kim","doi":"10.1007/s13391-026-00630-x","DOIUrl":"10.1007/s13391-026-00630-x","url":null,"abstract":"<div><p>Yttrium offers exceptional intrinsic extreme ultraviolet (EUV) transmittance and emissivity for next-generation pellicles. However, its severe oxidation susceptibility limits its practical implementation. In this study, we demonstrate that amorphous carbon (<i>a</i>-C) capping layers effectively preserve metallic Y, whereas plasma-enhanced atomic-layer-deposited SiN_x causes catastrophic oxidation. Our standalone <i>a</i>-C/Y/<i>a</i>-C film achieves 86.8% EUV transmittance and exhibits remarkable thermal stability, maintaining ≈ 400 ℃ peak temperature for over 1000 cycles under 1 W/cm² absorbed power. Transmission electron microscopy analysis of the freestanding membrane revealed substantial fluorine penetration throughout the Y core during back-etching, driven by a strong Y–F thermodynamic affinity. Despite the compositional change, the film retained its robust thermal performance. These results establish <i>a</i>-C–capped Y as a viable high-powered EUV pellicle, demonstrating that strategic material design can overcome intrinsic oxidation challenges while delivering the optical and thermal properties required for advanced lithography.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 4","pages":"381 - 392"},"PeriodicalIF":3.1,"publicationDate":"2026-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rational Design of Transition Metal-Based Electrocatalyst Materials for Efficient Urea Oxidation Toward Hydrogen Production and Wastewater Treatment","authors":"Qian Lei,&nbsp;Peng Cui,&nbsp;Seju Oh,&nbsp;Dong Ki Lee,&nbsp;Jung Kyu Kim,&nbsp;Suk Soon Choi","doi":"10.1007/s13391-026-00628-5","DOIUrl":"10.1007/s13391-026-00628-5","url":null,"abstract":"<div><p>Hydrogen is widely recognized as a promising energy carrier that can reduce reliance on fossil fuels and address global climate and environmental challenges. Electrochemical water splitting provides a sustainable pathway for hydrogen production, but its overall efficiency is limited by the sluggish oxygen evolution reaction (OER). Benefiting from its low thermodynamic potential, the electrocatalytic urea oxidation reaction (UOR) has emerged as an appealing alternative to replace OER, while simultaneously enabling the remediation of urea-rich wastewater. This dual functionality highlights the urgent demand for highly efficient and durable UOR electrocatalysts. In this review, we first introduce the fundamental reaction mechanism of UOR and systematically summarize recent advances in the rational design strategies for transition metal-based electrocatalysts, such as element doping, morphology engineering, phase engineering, defect engineering, alloying, and heterostructure construction. Finally, the remaining challenges and future perspectives are discussed, aiming to provide comprehensive insights that will guide the development of efficient and sustainable UOR-based technologies for hydrogen production and wastewater treatment.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div><div><p>This review summarizes the recent progress in the development of advanced transition metal-based electrocatalyst materials for efficient urea oxidation toward hydrogen generation, focusing on different rational design strategies. The conclusion encapsulates the current challenges and future prospects in electrocatalytic green urea conversion</p></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 4","pages":"322 - 340"},"PeriodicalIF":3.1,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular Beam Epitaxial Growth of α-In2Se3 Thin Films on Hexagonal Boron Nitride and Device Applications","authors":"Imhwan Kim,&nbsp;Wonwoo Suh,&nbsp;Jonghwa Kim,&nbsp;Myungjun Cha,&nbsp;Eunsu Lee,&nbsp;Seongbeom Kim,&nbsp;Hyunyong Choi,&nbsp;Celesta S. Chang,&nbsp;Gyu-Chul Yi","doi":"10.1007/s13391-026-00627-6","DOIUrl":"10.1007/s13391-026-00627-6","url":null,"abstract":"<div><p>We report the molecular beam epitaxial growth and device applications of α-In₂Se₃ thin films on hexagonal boron nitride (<i>h</i>-BN). We employed a two-step growth approach to grow thin films. Electron microscopy reveals uniform surfaces and a heteroepitaxial relationship between α-In₂Se₃ and <i>h</i>-BN, even though the α-In₂Se₃/<i>h</i>-BN is highly lattice-mismatched. Furthermore, the electrical and optoelectrical characteristics of the α-In₂Se₃ layers were examined by fabricating corresponding field-effect transistors and photodetectors.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"280 - 287"},"PeriodicalIF":2.6,"publicationDate":"2026-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-026-00627-6.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research on In-Situ Grown Graphene-Like Coated Copper Powder and Its Conductive Paste","authors":"Keliang Zhao,&nbsp;Chengcai Ye,&nbsp;Qing Wang,&nbsp;Ze Liu,&nbsp;Longlai Rao,&nbsp;Dalin Wang,&nbsp;Zhenguo Liu","doi":"10.1007/s13391-025-00626-z","DOIUrl":"10.1007/s13391-025-00626-z","url":null,"abstract":"<div><p>This study investigates the in-situ growth of graphene-like coated copper powder and its application in conductive pastes, with the aim of addressing the issue of reduced conductivity caused by copper powder oxidation in low-temperature cured electronic pastes, thereby improving the stability and long-term performance of the conductive paste. A graphene-like coating is synthesized on the surface of copper powder using an ascorbic acid-based method, followed by pyrolysis, significantly enhancing its oxidation resistance and electrical conductivity. The effects of process parameters—such as ascorbic acid dosage, pyrolysis temperature, and pyrolysis time—on the formation of the graphene-like coating were systematically studied. The structure and morphology of the coated copper powder were characterized using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (SEM), while its electrical conductivity was evaluated through resistivity measurements. The results indicate that a stable graphene-like coating can be in-situ formed on the copper powder surface when the ascorbic acid dosage is 5–10 times the theoretical minimum, the pyrolysis temperature is maintained at 400–450 °C, and the pyrolysis duration is 120 min, resulting in significantly lower resistivity compared to the uncoated copper powder. Further studies explored the application of the graphene-like coated copper powder in low-temperature cured conductive pastes, and its performance was compared to that of the original copper powder in paste preparation. Testing and analysis of the paste’s rheological behavior, printability, and electrical performance revealed that the graphene-like coated copper powder paste exhibits superior shear-thinning characteristics, printing uniformity, and conductivity stability when compared to the original copper powder paste. The experimental findings demonstrate that this coating technology significantly enhances the oxidation resistance and conductivity of copper powder, offering a promising material alternative for the development of low-temperature cured conductive pastes.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"251 - 263"},"PeriodicalIF":2.6,"publicationDate":"2026-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00626-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}