Electronic Materials Letters最新文献

{"title":"Samarium-Doped Ceria Nanospheres Prepared via Solvothermal Method and the Chemical Mechanical Polishing Properties","authors":"Zhenyang Wang,&nbsp;Tongqing Wang,&nbsp;Xinchun Lu","doi":"10.1007/s13391-024-00537-5","DOIUrl":"10.1007/s13391-024-00537-5","url":null,"abstract":"<div><p>As a crucial abrasive in chemical mechanical polishing (CMP), ceria has garnered significant attention regarding its preparation method and surface modification methods. This research investigates the properties for samarium-doped ceria nanospheres prepared via the solvothermal method and their CMP performance on dielectric materials. Ceria nanospheres with various Sm doping concentrations were synthesized using a surfactant-assisted solvothermal method. Doping increased the ratio of Ce³⁺ to Ce⁴⁺ and oxygen vacancy in ceria. While, Sm doping reduced the overall amount of Ce, resulting in a decrease in the material removal rate (MRR) of silicon oxide, and an initial decrease followed by an increase in the MRR of silicon nitride. The Ce_0.95Sm_0.05O₂ suspension exhibited better material removal selectivity than pristine ceria nanospheres, with an increase in the selection ratio from 7:1 to 25:1.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"252 - 259"},"PeriodicalIF":2.1,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-Principles Study of CO, NH3, HCN, CNCl, and Cl2 Gas Adsorption Behaviors of Metal and Cyclic C–Metal B- and N-Site-Doped h-BNs","authors":"Jiaming Zhao,&nbsp;Mingcong Zhang,&nbsp;Chunyang Wang,&nbsp;Weiyao Yu,&nbsp;Yongliang Zhu,&nbsp;Pengcheng Zhu","doi":"10.1007/s13391-024-00540-w","DOIUrl":"10.1007/s13391-024-00540-w","url":null,"abstract":"<div><p>Effective detection of toxic gases such as carbon monoxide (CO), ammonia (NH₃), hydrogen cyanide (HCN), cyanogen chloride (CNCl), and chlorine (Cl₂) is highly important. Herein, the potential applications of metal and cyclic carbon (C)–metal doping at the boron (B) and nitrogen (N) sites of hexagonal boron nitride (h-BN) as CO, NH₃, HCN, CNCl, and Cl₂ gas detection materials, and the performance characteristics of those systems, were investigated based on first principles. The calculated parameters for systems containing each gas along with different metal and cyclic C–metal B- and N-site-doped h-BN substrates include adsorption energy, energy band structure, charge transfer, density of states, differential charge density, and recovery time. Among the systems studied, h-BN@B-zinc (Zn)/CO, h-BN@B-Zn/HCN, h-BN@B-Zn/CNCl, h-BN@B-Zn/Cl₂, and h-BN@B-3C-tin(Sn)/Cl₂ were characterized by strong adsorption, high electrosensitivity, and strong orbital hybridization, and were unaffected by N₂ and O₂ in the air environment. In addition, the desorption performance of these systems could be improved by varying degrees by modulating the adsorption energy using an applied electric field, which further facilitated thermoelectrolytic adsorption. These results imply that metal and cyclic C–metal B- and N-site-doped h-BN can be used to realize gas-sensing devices with good gas-sensing and adsorption properties.</p><h3>Graphical Abstract</h3><p>The doping of N-site of h-BN can significantly increase the conductivity. h-BN@B-Zn can effectively detect CO, HCN, CNCl and Cl₂, h-BN@B-3C-Sn can effectively detect Cl₂.h-BN@B-Zn and h-BN@B-3C-Sn. The substrate is not affected by air during detection. CO, HCN and CNCl can be desorbed effectively at h-BN@B-Zn at temperatures up to 334 K. Electric field can improve the desorption effect and further achieve thermoelectric desorption.</p>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"268 - 288"},"PeriodicalIF":2.1,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143570968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Crystallography and Charge Transfer Dynamics of CeO2–ZnO Nanocomposites Prepared via Facial Thermal Decomposition","authors":"Samor Boonphan,&nbsp;Suriyong Prachakiew,&nbsp;Anurak Prasatkhetragarn,&nbsp;Arrak Klinbumrung","doi":"10.1007/s13391-024-00539-3","DOIUrl":"10.1007/s13391-024-00539-3","url":null,"abstract":"<div><p>The ZnO and CeO₂ nanostructures were prepared via a thermal decomposition process. The CeO₂–ZnO nanocomposites with various CeO₂ quantities of 0–5 mol% characterized the structure, morphology, and optical characteristics using XRD, FT–IR, SEM, UV–Vis spectroscopy, and PL techniques. The phase fraction, lattice constants, and defects were determined by the calculation from the XRD result. The 5 mol% CeO₂–added ZnO sample exhibits the highest polar surface. SEM analysis revealed the presence of ZnO nanorods and CeO₂ nanoparticles. The composites principally featured ZnO with the spontaneous incorporation of CeO₂ nanoparticles. The bandgap was modified as CeO₂ content, showing 3.37 eV for ZnO and 3.31 eV for 5 mol% CeO₂ incorporation. Photoluminescence (PL) analysis demonstrated the Zn, Ce, and O defects and transformation of zinc interstitial (Zn_i) to Zn regular site (Zn_Zn). The photocatalytic degradation of Methylene Blue (MB) under visible light irradiation exhibited a superior efficiency than the single catalyst, determining the influence of charge transfer between the composite interfaces in combination with the sublevel energy of both Ce³⁺ and oxygen vacancy (V_o) being the center of electron trapping. This research points out the characteristics and the performance of thermal decomposition–processed CeO₂–ZnO composites in the photo-induced technology. The charge transfers were discussed, associating with the structural constants, emissive spectra, and sublevel energy.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"162 - 176"},"PeriodicalIF":2.1,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Amorphous Ni-Fe-Si-B-O Nanosheets for Efficient Electrocatalytic Oxygen Evolution Reaction","authors":"Jing Zhang,&nbsp;Junjie Dong,&nbsp;Zhaolong Li,&nbsp;Jin Zhang,&nbsp;Zhiyuan Ma","doi":"10.1007/s13391-024-00538-4","DOIUrl":"10.1007/s13391-024-00538-4","url":null,"abstract":"<div><p>Transition metal silicate hydroxides (NFSO) have shown to be stable catalysts for electrocatalytic oxygen evolution reaction (OER) in alkaline environments. However, their catalytic activity is not satisfactory. In this work, we report the high OER performance of amorphous Ni-Fe-Si-B-O (NFSO-B_<i>x</i>) nanosheets catalyst synthesized by a simple coprecipitation method. Compared to traditional NFSO, the incorporation of B changes the electronic structure of NFSO and significantly enhances its activity. The optimum sample NFSO-B₁ exhibits an overpotential of 255 mV at 10 mA cm^− 2, which is 69 mV lower than that of undoped NFSO, and it is durable against 24 h of chronopotentiometry test and 1000 CV cycles. More importantly, the NFSO-B₁ catalyst outperforms NiFe-LDH and the benchmark commercial RuO₂ catalysts in OER activity, demonstrating great potential for commercial application.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"228 - 234"},"PeriodicalIF":2.1,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143570986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Counteracting Effect of Sn Grain Orientation on Current Crowding in Electromigration Failures of Solder Joints","authors":"Yifan Yao,&nbsp;Zhunan Lu,&nbsp;Yuxuan An,&nbsp;K. N. Tu,&nbsp;Yingxia Liu","doi":"10.1007/s13391-024-00535-7","DOIUrl":"10.1007/s13391-024-00535-7","url":null,"abstract":"<div><p>Electromigration (EM) failure in solder joints is a persistent reliability concern, especially in advanced electronic packaging structures. In this study, we conducted an EM experiment on solder joints with asymmetric under-bump-metallization (UBM) thicknesses. Open failure occurred at the solder joint with no current crowding effect but the highest atomic flux of EM, which is related to Sn grain orientation. Our work tries to reveal a counteracting effect of Sn grain orientation on current crowding and the essential reason for the EM failure mechanism of solder joints.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"134 - 143"},"PeriodicalIF":2.1,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-024-00535-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sputtered Amorphous Silicon Thin Films Exhibiting Low Argon Working Gas Content and High Film Density","authors":"Choong-Heui Chung","doi":"10.1007/s13391-024-00532-w","DOIUrl":"10.1007/s13391-024-00532-w","url":null,"abstract":"<div><p>To achieve high-quality sputtered amorphous silicon (a-Si) thin films with low argon (Ar) working gas atom content and high film density, the effects of <span>(:{P}_{Ar}{D}_{TS})</span> on Ar gas content and film density is investigated. Here, <span>(:{P}_{Ar})</span> is Ar working pressure and <span>(:{D}_{TS})</span> is target-to-substrate. The findings from this work indicate that the Ar gas content in the films primarily arises from highly energetic reflected Ar ions that bombard growing a-Si thin films at low <span>(:{P}_{Ar}{D}_{TS}:)</span> values (&lt; 50 Pa·mm). As <span>(:{P}_{Ar}{D}_{TS})</span> increases, a monotonic decrease in film density is observed. This results well correlates with the declining average energy of sputtered silicon atoms reaching the substrate. Optimal conditions for fabricating sputtered a-Si thin films with both low Ar content and high film density were identified within the <span>(:{P}_{Ar}{D}_{TS})</span> range of 30–40 Pa·mm. This research could provide valuable insights for researchers seeking to optimize the balance between low working gas content and high film density in sputtered thin films.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"49 - 55"},"PeriodicalIF":2.1,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Conductive Carbon Fabric from Waste Viscose for Electrothermal and Photothermal Management","authors":"Mengjia Wang,&nbsp;Riquan Zheng,&nbsp;Mengmeng Jiang,&nbsp;Xiaoqiang Li","doi":"10.1007/s13391-024-00533-9","DOIUrl":"10.1007/s13391-024-00533-9","url":null,"abstract":"<div><p>In recent years, there has been increasing interest in developing solutions to maintain human body temperature in extremely cold environments. Wearable electrically heated fabrics have been extensively researched, however, their complex preparation processes and associated environmental concerns hindered their widespread adoption. To address these challenges, this study focuses on develop a novel materials, which suitable for wearable applications with the low energy consumption and environmentally friendly. In this work, a simple and eco-friendly preparation method was proposed. The viscose-based carbon fabric (VCF) was prepared using viscose fabric as the raw material by means of high-temperature carbonization. The VCF exhibits excellent flexible, good electrical conductivity and remarkable photothermal conversion properties as well. VCF can absorb sunlight for heating and also has electric heating properties. Due to its outstanding flexible and thermal capability, the VCF was applied to heat human body under solar radiation; furthermore, the high electric heating efficiency makes it suitable for a wide range of applications, including indoor heating or de-icing treatment. With its strong potential for wearable applications, viscose-based carbon fabric presents a promising, energy-efficient solution for all-day personal thermal management. This research offers a broad and sustainable approach to developing advanced thermal management fabrics for diverse environmental conditions. </p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"56 - 69"},"PeriodicalIF":2.1,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved Electrochemical Plating for Void-Free Copper Line in ULSI Interconnect","authors":"Qiongyang Zhuang,&nbsp;Xiaofeng Jia,&nbsp;Jiangbing Yan,&nbsp;Jinde Lu","doi":"10.1007/s13391-024-00530-y","DOIUrl":"10.1007/s13391-024-00530-y","url":null,"abstract":"<div><p>Being the fundamental process of advanced back-end-of-line (BEOL) interconnects, the performance of copper (Cu) electrochemical plating (ECP) affects the resistivity of metal lines and plays a crucial role in RC delay and reliability concerns. A great deal of attention has been focused on reducing the Cu voids, but few reports concentrate on the initial period of ECP, especially when the wafer is immersed in the electrolyte. By optimizing the wafer immersion conditions, I achieved a defect image quantification reduction from a maximum of 88ea to a minimum of 0ea, indicating that a void-free Cu line was realized through a standard plating process, thanks to the reduced surface potential difference during the initial phase. As we develop advanced technology nodes such as below the 7 nm technology node, the higher requirement for the RC delay and reliability performance, this work has good potential applications below the 7 nm technology node, because it provides a promising solution to reduce Cu line voids and can be beneficial to alleviate the RC delay and enhance the reliability in back end of line (BEOL) interconnection.</p><h3>Graphic Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"41 - 48"},"PeriodicalIF":2.1,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly Sensitive and Selective Room Temperature NO2 Gas Sensor Based on 3D BiFeO3 − x Microflowers","authors":"Wei Wang,&nbsp;Wei Jiang,&nbsp;Lei Zhuang","doi":"10.1007/s13391-024-00534-8","DOIUrl":"10.1007/s13391-024-00534-8","url":null,"abstract":"<div><p>High-performance chemresistive gas sensors operating at low or room temperatures are of great potential for practical applications. In this work, the oxygen vacancies-rich BiFeO_3 − x microflowers were synthesized using a facile solvothermal route. The characterized results showed that BiFeO_3 − x was assembled with nanosheets, and displayed a diameter of around 1 μm. The as-fabricated BiFeO_3 − x gas sensor exhibited fine sensing properties towards 0.5-5 ppm NO₂ under ~ 23 ^oC, including a response of 2.92 to 5 ppm NO₂, and it also maintained a response of 1.05 towards 50 ppb NO₂. The gas sensor demonstrated a theoretical limit of detection as low as 273 ppb, rapid response/recovery speed (22/69 s), good selectivity, and repeatability. The improved NO₂ sensing mechanism of enriched oxygen vacancies-BiFeO_3 − x was investigated regarding its micro-nano structure and abundant oxygen species.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"102 - 110"},"PeriodicalIF":2.1,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical Performance and Stability Improvement of In2O3 Thin-Film Transistors Engendered by Oxygen-Free Focused Plasma Treatment","authors":"Han-Lin Zhao,&nbsp;Sung-Jin Kim","doi":"10.1007/s13391-024-00531-x","DOIUrl":"10.1007/s13391-024-00531-x","url":null,"abstract":"<div><p>In the last decade, interest in solution-processed transparent oxide semiconductors has been increasing. Specifically, indium oxide (In₂O₃) films have been researched due to their processability using aqueous solutions without organic additives. However, the film quality of as-deposited layers might be suboptimal, which requires some type of post-deposition treatment. In this work, the effect of the treatment by a focused plasma (FP) under both N₂ (FP-N) and N₂:H₂ (FP-H) gases on In₂O₃ thin-film transistors (TFTs) is explored. The In₂O₃ TFTs with optimized device performance were fabricated using a volatile nitrate precursor at an annealing temperature of 250 °C. The FP-N In₂O₃ devices achieved saturation mobility (µ_sat) of 3.83 ± 0.14 cm²/Vs, and the threshold voltage was about 3 V. The FP-H devices with a µ_sat of 2.56 ± 0.15 cm²/Vs, on/off current ratio of 4.3 × 10⁶, exhibited stable electrical characteristics with improved gate bias stress stability and time-dependent environmental stability. These results demonstrate that FP treatment of solution processed In₂O₃ semiconductors effectively enhances carrier transport performance and improves bias stability.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div><div><p>Han-Lin Zhao et al., Indium oxide semiconductors prepared based on solution-processes have many advantages, such as the ability to be prepared at low temperatures, but the performance of the prepared devices is poor. This work has shown that the performance of the devices can be improved by subjecting the devices to an oxygen-free focused plasma treatment for different gas</p></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"145 - 153"},"PeriodicalIF":2.1,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143570963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}