Electronic Materials Letters最新文献_第10页

A Stepped Mesh Host for Lithium Metal Batteries Inspired by Transmission Electron Microscopy Sampling Grids 受透射电子显微镜取样网格启发的锂金属电池阶梯式网格主机

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-12-16 DOI: 10.1007/s13391-023-00474-9

Jeongmin Kim, Mihyun Kim, Minki Kim, Jinseok Hong, Seung Won Moon, Seung-Ho Yu, Seung-Yong Lee

{"title":"A Stepped Mesh Host for Lithium Metal Batteries Inspired by Transmission Electron Microscopy Sampling Grids","authors":"Jeongmin Kim, Mihyun Kim, Minki Kim, Jinseok Hong, Seung Won Moon, Seung-Ho Yu, Seung-Yong Lee","doi":"10.1007/s13391-023-00474-9","DOIUrl":"10.1007/s13391-023-00474-9","url":null,"abstract":"<div><p>With the growing demand for high-energy-density rechargeable batteries, lithium metal anodes have reemerged as a promising alternative to conventional graphite anodes in lithium-ion batteries. Lithium metal boasts exceptional energy storage characteristics, yet its practical application has been impeded by dendritic growth issues. Extensive research has explored various solutions, including electrode engineering through surface modification and 3D structural hosts, which often involve intricate designs and processes. This study introduces an effective approach to govern lithium metal nucleation and growth, leveraging the synergistic effects of a lithiophilic layer and surface energy diversification. Inspired by the structure of standard copper mesh grids used in transmission electron microscopy (TEM), we illustrate how subtle topographic modifications can provide a viable path to anode-free lithium metal batteries. This research represents a significant stride towards accelerated advancements in lithium metal batteries, promising higher energy density and enhanced safety for energy storage solutions.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 6","pages":"767 - 774"},"PeriodicalIF":2.1,"publicationDate":"2023-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138687371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The In-Situ TEM Isothermal Aging Evolution in a µ-Cu/NiAu/Sn/Cu Solder Joint for Full Intermetallic Compounds Interconnects of Flexible Electronics 用于柔性电子全金属间化合物互连的 µ-Cu/NiAu/Sn/Cu 焊点的原位 TEM 等温老化演化

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-12-12 DOI: 10.1007/s13391-023-00475-8

Jinhong Liu, Xinyi Jing, Jieshi Chen, Kyung-Wook Paik, Peng He, Shuye Zhang

{"title":"The In-Situ TEM Isothermal Aging Evolution in a µ-Cu/NiAu/Sn/Cu Solder Joint for Full Intermetallic Compounds Interconnects of Flexible Electronics","authors":"Jinhong Liu, Xinyi Jing, Jieshi Chen, Kyung-Wook Paik, Peng He, Shuye Zhang","doi":"10.1007/s13391-023-00475-8","DOIUrl":"10.1007/s13391-023-00475-8","url":null,"abstract":"<div><p>A structure composed of various Cu–Ni–Sn IMCs would develop from severe Joule heat and excessive elemental diffusion under high-density current in the solder joints of flexible printed circuit (FPC). Herein, we firstly observed the evolution of a Cu<sub>6</sub>Sn<sub>5</sub> + Cu<sub>3</sub>Sn/(Ni,Cu)<sub>3</sub>Sn<sub>4</sub> hybrid structure in a µ-Cu/NiAu/Sn/Cu solder joint for full intermetallic compounds (IMCs) interconnect of flexible electronics under isothermal aging condition by in-situ TEM. The joint was divided into two regions, the IMC type on the right region remained unchanged with dwell time prolonging, while the ratio of Cu<sub>3</sub>Sn on the left region at various dwell times fitted the JMAK model when the kinetic parameter n picked 1.5, indicating that grain boundary diffusion was the predominant mechanism for transporting Cu atoms. The nucleation and growth of Cu<sub>3</sub>Sn grains were finished in the Cu<sub>6</sub>Sn<sub>5</sub> layer. The nucleation of a Cu<sub>3</sub>Sn grain with a spherical cap shape was firstly captured by HRTEM, and Cu<sub>3</sub>Sn grains underwent a transformation from columnar to equiaxed when the dwell time was increased, making the morphology of Cu<sub>3</sub>Sn grains in a µ-Cu/NiAu/Sn/Cu solder joint significantly different from the situation in larger solder joints. This study is expected to provide an in-depth study of the microstructural evolution of micro Cu/NiAu/Sn/Cu solder joints under aging condition and thereby expand their application in the microelectronic industry.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"352 - 361"},"PeriodicalIF":2.1,"publicationDate":"2023-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138628639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing Al+注入SiC高温退火过程中4H到3C多型转变

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-12-02 DOI: 10.1007/s13391-023-00473-w

L. Kuebler, E. Hershkovitz, D. Kouzminov, H.-J. Gossmann, S. Charnvanichborikarn, C. Hatem, H. Kim, K. S. Jones

{"title":"4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing","authors":"L. Kuebler, E. Hershkovitz, D. Kouzminov, H.-J. Gossmann, S. Charnvanichborikarn, C. Hatem, H. Kim, K. S. Jones","doi":"10.1007/s13391-023-00473-w","DOIUrl":"10.1007/s13391-023-00473-w","url":null,"abstract":"<div><p>Polytypism in SiC has created interest and opportunity for device heterostructures and bandgap engineering in power electronic applications. As each SiC polytype possesses a different bandgap, electron mobility, and degree of anisotropy, unique interfaces can be created without changing its chemical composition. The 4H polytype is commonly used, but the 3C polytype offers high surface electron mobility with isotropic properties as the only cubic polytype. This has driven research on heteroepitaxy with limited success in traditional chemical vapor deposition chambers. Discussion on polytype control and stability has been restricted to bulk and epitaxial crystal growth, despite numerous reports of polytypic transformations occurring during other processing steps. This study revealed the polytypic transformation of 4H-SiC to 3C-SiC after high temperature annealing using high resolution cross-sectional transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). Above 1750 °C, the surface significantly roughened under a reduced pressure of Ar, whereas surface planarity was maintained under Ar atmospheric pressure. The formation of 3C-SiC islands occurred adjacent to large surface pits through an epitaxial growth process for the reduced pressure condition only. Loss of SiC stoichiometry at the surface with Si enrichment and availability of on-axis terraces enabled 3C nucleation. 3C-SiC growth was retarded using a protective carbon cap (C-cap) where defect-free single crystal 3C-SiC has a coherent interface with the 4H-SiC substrate underneath. These findings demonstrate that the 3C polytype can be stable at high temperatures, encouraging the need for a better understanding of polytype stability and control.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"345 - 351"},"PeriodicalIF":2.1,"publicationDate":"2023-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138506846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction to: Manipulation of Hole and Exciton Distributions in Organic Light-Emitting Diodes with Dual Emission Layers 更正：操纵双发射层有机发光二极管中的空穴和激子分布

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-11-30 DOI: 10.1007/s13391-023-00471-y

Suk-Ho Song, Jae-In Yoo, Hyo-Bin Kim, Sung-Cheon Kang, Kanghoon Kim, Sung-Jae Park, Qun Yan, Jang-Kun Song

引用次数: 0

Contact Area of Electrification Materials Relating to Triboelectric Generators: A Comparative Study 摩擦发电机电气化材料接触面积的比较研究

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-11-25 DOI: 10.1007/s13391-023-00470-z

Aristeidis Repoulias, Irini Logothetis, Dimitra Matsouka, Savvas Vassiliadis

{"title":"Contact Area of Electrification Materials Relating to Triboelectric Generators: A Comparative Study","authors":"Aristeidis Repoulias, Irini Logothetis, Dimitra Matsouka, Savvas Vassiliadis","doi":"10.1007/s13391-023-00470-z","DOIUrl":"10.1007/s13391-023-00470-z","url":null,"abstract":"<div><p>Triboelectric generators (TEGs) stemming from the triboelectric phenomena, are promising for energy harvesting due to their high output power and efficiency. Analysis of the tribo material selection for TEGs has suggested that energy generation is linked to heterogeneous and homogeneous materials found at opposite ends of the triboelectric series. Current research has identified that the triboelectric phenomenon also exists from contact between identical tribo materials with the advancement of surface modification. However, a comparison of composite and identical homogeneous TEGs has yet to be reported. For this research, organic polymer membranes Polyamide-6 (PA6) and Polytetrafluoroethylene (PTFE) were evaluated. The membranes were cut into samples of varying dimensions to build three sets of TEGs for comparison. Two identical sets of four sampled TEGs were fabricated using the same membrane (i.e., PA6-PA6 and PTFE-PTFE); in contrast to a composite set of four sampled TEGs made from the two distinct membranes (i.e., PA6-PTFE). By repeatedly sampling the TEGs in sliding mode at a speed of 0.2 m/s and with a vertical force of 9.8 N an open circuit voltage (<i>V</i><sub><i>oc</i></sub>) was generated and recorded. As a result, the <i>V</i><sub><i>oc</i></sub> of the identical TEGs was compared to the <i>V</i><sub><i>oc</i></sub> of the composite TEG in which the tribo materials are located at opposite ends of the triboelectric series. It was also observed that the <i>V</i><sub><i>oc</i></sub> increased almost linear in relation to the surface area of the TEGs; thus, suggesting that the surface area of the TEG can influence significantly the <i>V</i><sub><i>oc</i></sub> to a great extent.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"283 - 292"},"PeriodicalIF":2.1,"publicationDate":"2023-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-023-00470-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138506847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of Sputtering Parameters and Their Effect on Structural and Electrical Properties of CAAC-IGZO Thin-Film Transistors 溅射参数优化及其对CAAC-IGZO薄膜晶体管结构和电学性能的影响

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-11-23 DOI: 10.1007/s13391-023-00472-x

Jae Yu Cho, Jaeseung Jo, Parag R. Patil, Yong Tae Kim, Deok-Yong Cho, Jin Hyeok Kim, Jaeyeong Heo

{"title":"Optimization of Sputtering Parameters and Their Effect on Structural and Electrical Properties of CAAC-IGZO Thin-Film Transistors","authors":"Jae Yu Cho, Jaeseung Jo, Parag R. Patil, Yong Tae Kim, Deok-Yong Cho, Jin Hyeok Kim, Jaeyeong Heo","doi":"10.1007/s13391-023-00472-x","DOIUrl":"10.1007/s13391-023-00472-x","url":null,"abstract":"<div><p>A c-axis aligned crystalline indium gallium zinc oxide (CAAC-IGZO) possesses unique properties beneficial for thin-film transistors (TFTs). In this study, we investigate the effect of oxygen ratio and radio frequency (RF) power on the structural, electrical, and operational characteristics of CAAC-IGZO thin films. Films were deposited on SiO<sub>2</sub> substrates using an RF sputtering system equipped with a target containing In, Ga, Zn, and O with a composition ratio of 1:1:1:4. The effect of oxygen percentage on the structural characteristics was analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM). The oxygen percentage in the film was found to play a crucial role in forming the CAAC-IGZO and orientation of the thin films. With increasing O<sub>2</sub> fraction, the (009)-preferred orientation of the films improved. X-ray absorption spectroscopy also validated the improved orientations of the CAAC-IGZO with high O<sub>2</sub> concentrations up to 70%. In terms of TFT performance, however, the device with 3.3% oxygen exhibited the best performance with a saturation mobility of 10.9 cm<sup>2</sup> V<sup>− 1</sup> s<sup>− 1</sup>. TFT devices were prepared at a low oxygen fraction (10%) with different RF power inputs from 100 to 250 W, where the device prepared with highest power (250 W) showed the best performance.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"372 - 380"},"PeriodicalIF":2.1,"publicationDate":"2023-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138506839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface Chemical Reactions During Atomic Layer Deposition of Zinc Oxynitride (ZnON) 原子层沉积氮化锌 (ZnON) 过程中的表面化学反应

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-11-10 DOI: 10.1007/s13391-023-00467-8

Tran Thi Ngoc Van, Bonggeun Shong

{"title":"Surface Chemical Reactions During Atomic Layer Deposition of Zinc Oxynitride (ZnON)","authors":"Tran Thi Ngoc Van, Bonggeun Shong","doi":"10.1007/s13391-023-00467-8","DOIUrl":"10.1007/s13391-023-00467-8","url":null,"abstract":"<div><p>Atomic layer deposition (ALD) is a promising technique for fabricating high-quality thin films. For improving the process conditions and material quality of ALD, understanding the surface chemical mechanisms at the molecular level is important as the entire ALD process is based on the reactions of precursors on the substrate surfaces. Zinc oxynitride (ZnON) is gaining significant research interest as a<i> p</i>-type semiconductor material. Although the ALD of ZnON can be performed by dosing H<sub>2</sub>O and NH<sub>3</sub> as oxygen and nitrogen sources, respectively, the elemental ratio of O and N in the deposited film differs considerably from that in the gaseous sources. In this study, the surface reactions of ZnON ALD are analyzed employing density functional theory calculations. All the ALD surface reactions of ZnO and ZnN are facile and expected to occur rapidly. However, the substitution of a surface *NH<sub>2</sub> by H<sub>2</sub>O to form *OH is preferred, whereas the inverse reaction is implausible. We propose that the differences in the reactivity could originate from the higher bond energy of Zn–O than that of Zn–N.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"500 - 507"},"PeriodicalIF":2.1,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135141879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inkjet-Printed Flexible Ultrasensitive Chemiresistive Sensors for Aggregation Pheromone of Flour Beetles 喷墨打印柔性超灵敏化学电阻传感器用于检测面粉甲虫的聚集信息素

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-11-08 DOI: 10.1007/s13391-023-00466-9

Yunnan Fang, Manos M. Tentzeris

{"title":"Inkjet-Printed Flexible Ultrasensitive Chemiresistive Sensors for Aggregation Pheromone of Flour Beetles","authors":"Yunnan Fang, Manos M. Tentzeris","doi":"10.1007/s13391-023-00466-9","DOIUrl":"10.1007/s13391-023-00466-9","url":null,"abstract":"<div><p>This work reports the first demonstration that a chemoresistive sensor can be used to detect the aggregation pheromone of flour beetles. To prepare the sensing element of such a sensor, a novel functionalization method was developed to amplify amine groups on the surface of carbon nanotubes (CNTs). Unlike traditional amine-amplification approaches in which amplification efficiency is significantly reduced by self-crosslinking, the current amine amplification process was self-crosslinking-free due to the use of a home-made compound in which amine groups were protected by Boc (tert-butyloxycarbonyl) protecting groups and could be deprotected as needed. The inkjet ink formulated from the functionalized CNTs, together with an amine-rich compound and a commercial silver nanoparticle-based inkjet ink, was used to fabricate (via inkjet-printing and drop-casting) lightweight, flexible, and miniature-sized chemiresistive sensors for 4,8-dimethyldecanal (DMD), a compound known to be the aggregation pheromone of several species of flour beetles. A home-built gas sensing system, including a commercial gas generator, a DMD permeation tube with its emission rate certified, a data-acquisition system, and some home-developed LabVIEW-based programs, was utilized to perform the DMD sensing trials. The sensors showed ultra-high sensitivity to synthetic aggregation pheromone DMD, as indicated by their prompt and significant responses to 100 ppb DMD vapor. A mechanism for the sensitive sensing of DMD is proposed.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"244 - 253"},"PeriodicalIF":2.1,"publicationDate":"2023-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135341583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An Ideal Two-Dimensional Porous B4O2 as Anode Material for Enhancing Ion Storage Performance 一种理想的二维多孔 B4O2 阳极材料用于提高离子存储性能

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-11-07 DOI: 10.1007/s13391-023-00465-w

Chen Li, Yangtong Luo, Zhangyan Wang, Chengyong Zhong, Shuo Li

{"title":"An Ideal Two-Dimensional Porous B4O2 as Anode Material for Enhancing Ion Storage Performance","authors":"Chen Li, Yangtong Luo, Zhangyan Wang, Chengyong Zhong, Shuo Li","doi":"10.1007/s13391-023-00465-w","DOIUrl":"10.1007/s13391-023-00465-w","url":null,"abstract":"<div><p>The utilization of two-dimensional porous materials as anodes in ion batteries has garnered significant interest within the field of clean energy because of their flexible architecture, high conductivity, rapid diffusion process and high specific ion capacity. Herein, we developed a new metal-free 2D porous compound, namely, B<sub>4</sub>O<sub>2</sub>. The stability of the B<sub>4</sub>O<sub>2</sub> monolayer was verified through the ab-initio molecular dynamics simulations and phonon spectrum calculations. The results demonstrate that the adsorption of K, Na, and Li atoms onto the B<sub>4</sub>O<sub>2</sub> monolayer surface is remarkably stable, with all three species exhibiting a shared diffusion path. Specifically, we found that the adsorption of K atoms on the B<sub>4</sub>O<sub>2</sub> monolayer surpasses that of Na and Li atoms, and the diffusion of K atoms occurs at a faster rate than Na and Li atoms on the same monolayer surface. The maximum theoretical specific capacity of K<sup>+</sup>, Na<sup>+</sup> and Li<sup>+</sup> is calculated to be 626.1 mAh/g. In addition, the B<sub>4</sub>O<sub>2</sub> monolayer retains good electronic conductivity and electron activity during the atomic adsorption processes. Based on our findings, the B<sub>4</sub>O<sub>2</sub> monolayer exhibits significant potential as anode material for ion batteries. This study paves the way for a novel approach in designing new 2D porous materials specifically tailored for energy storage and conversion applications.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"275 - 282"},"PeriodicalIF":2.1,"publicationDate":"2023-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135432681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Near-Ultraviolet Lateral Photovoltaic Effect of Epitaxial Nb:SrTiO3 Films on Si Substrate Using TiN as a Buffer Layer 以 TiN 为缓冲层的硅基底上外延 Nb:SrTiO3 薄膜的近紫外侧光电效应

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-11-02 DOI: 10.1007/s13391-023-00469-6

Fang Wang, Yu Liu, Tian Yu, Cai, Wenfeng Xiang

{"title":"Near-Ultraviolet Lateral Photovoltaic Effect of Epitaxial Nb:SrTiO3 Films on Si Substrate Using TiN as a Buffer Layer","authors":"Fang Wang, Yu Liu, Tian Yu,  Cai, Wenfeng Xiang","doi":"10.1007/s13391-023-00469-6","DOIUrl":"10.1007/s13391-023-00469-6","url":null,"abstract":"<div><p>In recent years, significant attention has been directed toward exploring heterojunctions based on perovskite materials for ultraviolet photodetectors. This study focuses on the fabrication of high-quality single-crystal Nb:SrTiO<sub>3</sub> (NSTO) films on Si substrates, achieved through the utilization of a TiN thin film as a buffer layer. The investigation delves into the lateral photovoltaic effect exhibited by the film. Characterization using X-ray diffraction and high-resolution transmission electron microscopy confirms the exceptional quality of the NSTO film. Notably, the observed position sensitivity attains an impressive value of 43.9 mV mm−1. Analysis of the lateral photovoltaic effect reveals response and relaxation times of approximately 105.6 ns and 4.49 µs, respectively. Intriguingly, fitting results for the relaxation time indicate minimal defects within the NSTO/TiN/Si heterostructures. These findings underscore the significant potential of NSTO/TiN/Si heterojunctions, presenting a promising avenue for their widespread application in the realm of position change technology.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"269 - 274"},"PeriodicalIF":2.1,"publicationDate":"2023-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135934212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0