Electronic Materials Letters最新文献_第10页

Vertical Pattern of Interconnects to Bypass High Strain Near a Hard Die on a Flexible Substrate Under Mechanical Bending 机械弯曲下柔性基板上靠近硬模的互连线绕过高应变的垂直模式

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-19 DOI: 10.1007/s13391-023-00444-1

Jong-Sung Lee, Young-Joo Lee, Jaegeun Seol, Young-Chang Joo, Byoung-Joon Kim

{"title":"Vertical Pattern of Interconnects to Bypass High Strain Near a Hard Die on a Flexible Substrate Under Mechanical Bending","authors":"Jong-Sung Lee, Young-Joo Lee, Jaegeun Seol, Young-Chang Joo, Byoung-Joon Kim","doi":"10.1007/s13391-023-00444-1","DOIUrl":"10.1007/s13391-023-00444-1","url":null,"abstract":"<div><p>The distinguishing feature of a flexible electronic device is that it maintains its function even when the shape changes repeatedly. As the degree of integration of flexible devices increases, revealing failure mechanisms and extending the lifetime of the flexible devices are getting more difficult. One of the potential damage zones is the interface of heterogeneous material components, where strain can be localized due to the mismatch of mechanical properties. In this study, we investigate the mechanically reliable interconnect design of the flexible printed circuit board (FPCB) system in which the packaging chip is integrated. When the FPCB was bent, folding occurred at the edge of the packaging chip due to the high bending rigidity compared with the plastic substrate and resulted in high strain concentration. By introducing interconnect architecture that bypassed the strain concentration area around the packaging chip, mechanical damage of the interconnects was successfully reduced. Through finite element simulation, the strain applied to the interconnect crossing the strain-concentrated region was predicted to be 2 times larger than that bypassing the strain-concentrated region, from 8.32 to 4.64%. In addition, the strain gap of these two interconnects could be increased as the Young’s modulus mismatch between the packaging chip and the substrate increased. This study is expected to improve the design guidelines to mechanically reliable interconnects in highly integrated flexible electronics.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"122 - 130"},"PeriodicalIF":2.1,"publicationDate":"2023-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49111675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pt, Ag and Au Nanoparticles on Hollow Carbon Spheres as Cathode ORR 铂、银、金纳米颗粒在空心碳球上作为阴极ORR

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-19 DOI: 10.1007/s13391-023-00443-2

Yuhan Jiang, Linlin Guan, Yangjing Jiao, Chunxin Yu, Fang Zhao, Xiaowei Zhou, Zhu Liu

引用次数: 0

Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window 大阻窗ReRAM中Ta/TaxMnyOz/Pt结构的双极电阻开关特性

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-07 DOI: 10.1007/s13391-023-00440-5

Yunki Kim, Kyu-Jin Jo, Jin-Su Oh, Cheol-Woong Yang

{"title":"Bipolar Resistive Switching Characteristics of Ta/TaxMnyOz/Pt Structure for ReRAM Application with Large Resistance Window","authors":"Yunki Kim, Kyu-Jin Jo, Jin-Su Oh, Cheol-Woong Yang","doi":"10.1007/s13391-023-00440-5","DOIUrl":"10.1007/s13391-023-00440-5","url":null,"abstract":"<div><p>In this study, a resistive random-access memory device based on a Ta/Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub>/Pt metal–insulator–metal structure was fabricated and examined. The test device exhibited stable bipolar resistive switching characteristics with DC endurance of more than 300 cycles and robust retention up to 10<sup>4</sup> s at room temperature. Moreover, the device had a low forming voltage and a resistance window of ~ 10<sup>3</sup>. The conduction mechanism in each resistance state of the device was analyzed through current–voltage curve fitting. It was confirmed that the primary conduction mechanisms were ohmic and Poole–Frenkel conduction in the low- and high-resistance states, respectively. By analyzing the cross section of the fabricated device through transmission electron microscopy, it was found that the Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer was deposited in amorphous form. The composition and chemical bonding state of the Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer were also analyzed using X-ray photoelectron spectroscopy. With these characteristics, the amorphous Ta<sub>x</sub>Mn<sub>y</sub>O<sub>z</sub> layer has strong potential for nonvolatile memory applications.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 1","pages":"26 - 32"},"PeriodicalIF":2.1,"publicationDate":"2023-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44636505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pyridine Vapor Annealing Induced Reversible Switching Emission and Enhanced Electroluminescent Performance of Poly(fluorene-co-dibenzothiophene-S,S-dioxide) 吡啶蒸气退火诱导可逆开关发射及增强聚芴-co-二苯并噻吩- s, s -二氧化硅的电致发光性能

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-05 DOI: 10.1007/s13391-023-00442-3

Junfei Liang, Tong Wu, Jun Chen

{"title":"Pyridine Vapor Annealing Induced Reversible Switching Emission and Enhanced Electroluminescent Performance of Poly(fluorene-co-dibenzothiophene-S,S-dioxide)","authors":"Junfei Liang, Tong Wu, Jun Chen","doi":"10.1007/s13391-023-00442-3","DOIUrl":"10.1007/s13391-023-00442-3","url":null,"abstract":"<div><p>In this article, we report on blue-green exciplex emission through pyridine solvent vapor annealing blue-light polymer PFSO10, which is comprised the strong electron-withdrawing dibenzo-thiophene-<i>S</i>,<i>S</i>-dioxide with the molar ratio of 10%. The photoluminescent spectrum of PFSO10 film emerged a fresh low-energy emission peaked at 482 nm after pyridine solvent vapor annealing, which was stemmed from the exciplex charge-transfer state between the PFSO10 and pyridine. It is worth noting that the exciplex emission peaked at 482 nm from the pyridine solvent vapor annealing film was disappeared after thermal annealed at 120 °C and its photoluminescent spectrum was similar to that of the pristine PFSO10 film. This similar phenomenon of photoluminescent spectrum was also occurred to the electroluminescent spectra of the PFSO10 films. Furthermore, the device performance of PFSO10 was achieved significant improvement after pyridine solvent vapor annealing. With optimizing the pyridine vapor annealing process, the device based on PFSO10 as emissive layer received a maximum luminous efficiency of 6.74 cd A<sup>−1</sup> with the peak brightness of 22,364 cd m<sup>−2</sup>, which was enlarged over 140% compared to that of 2.77 cd A<sup>−1</sup> for the pristine PFSO10. These results demonstrate that appropriate solvent vapor annealing can be a simple and effective strategy to realize the reversible switching emission and improve the device performance.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"183 - 191"},"PeriodicalIF":2.1,"publicationDate":"2023-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44276533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Characteristics of Rhombohedral (3R) Structure of α-In2Se3 Nanosheets by Mechanical Exfoliation 机械剥离法制备α-In2Se3纳米片的菱形（3R）结构特征

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-05 DOI: 10.1007/s13391-023-00439-y

Dong Hyun Seo, Ju Won Kim, Jin-Hoo Seong, Hyo-Chang Lee, Sang-il Kim, TaeWan Kim

{"title":"Characteristics of Rhombohedral (3R) Structure of α-In2Se3 Nanosheets by Mechanical Exfoliation","authors":"Dong Hyun Seo, Ju Won Kim, Jin-Hoo Seong, Hyo-Chang Lee, Sang-il Kim, TaeWan Kim","doi":"10.1007/s13391-023-00439-y","DOIUrl":"10.1007/s13391-023-00439-y","url":null,"abstract":"<div><p>The mechanically exfoliated ultrathin 3R α-In<sub>2</sub>Se<sub>3</sub> nanosheets were transferred onto a SiO<sub>2</sub>/Si substrate. Using atomic force microscopy, it was confirmed that the transferred α-In<sub>2</sub>Se<sub>3</sub> transferred had a thickness of 15–120 nm. The thickness-dependence of Raman peaks of <span>({E}^{2})</span>, <span>({A}_{1}^{1})</span>, <span>({E}^{4})</span>, and <span>({A}_{1}^{2})</span> was observed from the Raman spectra. Moreover, the measured photoluminescence peak values in the range of 869–895 nm indicate a blue shift as the thickness decreases. The field-effect transistor based on α-In<sub>2</sub>Se<sub>3</sub> exhibited an n-type semiconductor behavior. From the transfer curve at gate voltage of 10 V, the derived values of the mobility and ON/OFF ratio are 24.26 cm<sup>2</sup> V<sup>− 1</sup> s<sup>− 1</sup> and 1.84, respectively. In addition, it was confirmed that the 3R α-In<sub>2</sub>Se<sub>3</sub> layers had a high photoresponsivity of up to approximately 34,500 A/W under illumination (<span>(lambda)</span> = 750 nm).</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"192 - 198"},"PeriodicalIF":2.1,"publicationDate":"2023-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49408741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Open-Circuit Voltage of Eco-Friendly Silver Bismuth Iodide Thin-Film Photovoltaics with PTB7 Polymer-Based Hole Transport Layer 利用PTB7聚合物基空穴传输层提高生态友好型碘化铋银薄膜光伏的开路电压

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-05-19 DOI: 10.1007/s13391-023-00437-0

Tae-Gyun Kwon, Taesu Kim, Younghoon Kim

{"title":"Enhanced Open-Circuit Voltage of Eco-Friendly Silver Bismuth Iodide Thin-Film Photovoltaics with PTB7 Polymer-Based Hole Transport Layer","authors":"Tae-Gyun Kwon, Taesu Kim, Younghoon Kim","doi":"10.1007/s13391-023-00437-0","DOIUrl":"10.1007/s13391-023-00437-0","url":null,"abstract":"<div><p>Next-generation and solution-processed thin-film solar cells have been attracted considerable attention because of their low cost, light weight, flexibility, and aesthetics. However, most of solution-processed thin-film solar cells are now focused on the use of photovoltaic absorbers containing the toxic element of Pb. In this study, eco-friendly silver-bismuth-iodide (Ag-Bi-I) thin-film photovoltaic devices with high open-circuit voltages (<i>V</i><sub>OC</sub>) are developed by utilizing polythieno[3,4-<i>b</i>]-thiophene-co-benzodithiophene (PTB7) as the hole transport layer (HTL). The solution-processed AgBi<sub>2</sub>I<sub>7</sub> semiconductor, which is an Ag-Bi-I ternary compound, exhibit features suitable for photovoltaic layers in thin-film solar cells, including a three-dimensional (3D) crystal structure, good surface morphology, and low optical bandgaps of 1.87 eV. Meanwhile, the solution-processed AgBi<sub>2</sub>I<sub>7</sub> thin-film solar cell based on the PTB7 HTL exhibit a power conversion efficiency of 0.94% with an improved <i>V</i><sub>OC</sub> value of 0.71 V owing to the deeper highest occupied molecular orbital (HOMO) energy level compared to that of poly(3-hexylthiophene-2,5-diyl) (P3HT). In other words, the <i>V</i><sub>OC</sub> of the PTB7 HTL-based device is 20% higher than that of the P3HT HTL-based control device. Our results provide a new approach for increasing the <i>V</i><sub>OC</sub> of eco-friendly Ag-Bi-I thin-film photovoltaics and indicate that further HTL engineering is necessary to simultaneously improve the <i>V</i><sub>OC</sub> and performance of the devices.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"165 - 172"},"PeriodicalIF":2.1,"publicationDate":"2023-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46812768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel Sn-Doped WO3 Photocatalyst to Degrade the Organic Pollutants Prepared by Green Synthesis Approach 绿色合成法制备的新型掺锡WO_3光催化剂降解有机污染物

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-05-13 DOI: 10.1007/s13391-023-00436-1

N. R. Khalid, Samavia Ilyas, Faisal Ali, Tahir Iqbal, M. Rafique, Muhammad Imran, Mohammad A. Assiri

{"title":"Novel Sn-Doped WO3 Photocatalyst to Degrade the Organic Pollutants Prepared by Green Synthesis Approach","authors":"N. R. Khalid, Samavia Ilyas, Faisal Ali, Tahir Iqbal, M. Rafique, Muhammad Imran, Mohammad A. Assiri","doi":"10.1007/s13391-023-00436-1","DOIUrl":"10.1007/s13391-023-00436-1","url":null,"abstract":"<div><p>The organic pollutants are polluting the drinking water so, it is a field of great interest to clean this water by using some sophisticated materials. For this purpose, the nanostructured materials are playing vital role to attain sustainable and pure drinking water by degrading organic pollutants. The synthesis of such photocatalytic material without using harmful chemicals, is one of the important existing challenges. Thus, to tackle this challenge, we have prepared green synthesized Sn-doped WO<sub>3</sub> nanomaterials by varying the content of Sn from 2 to 6 wt% and assisting from moringa oleifera seeds’ extract. The crystal structure, morphology, optical and photoluminescence properties of as prepared samples were investigated through x-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet visible spectroscopy (UV-vis) and photoluminescence spectroscopy (PL) techniques. Among of as prepared samples, the 4Sn-WO<sub>3</sub> (4 wt% Sn doped WO<sub>3</sub>) sample has exhibited the reduced optical band gap value i.e. 2.80 eV than 3.02 eV for pure WO<sub>3</sub> sample. This optimized sample has also shown the lowest e-h recombination rate. To test the photocatalytic performance, the methylene blue was used as a model dye. Out of all samples, 4Sn-WO<sub>3</sub> sample has shown 95% degradation activity against this water pollutant. These findings specify that the as mentioned novel photocatalytic nanomaterial will provide a significant advancement in the environmental field to degrade the organic pollutants.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 1","pages":"85 - 94"},"PeriodicalIF":2.1,"publicationDate":"2023-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43084297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhanced Hall Mobility and d0 Ferromagnetism in Li-Doped ZnO Thin Films Prepared by Aerosol-Assisted CVD 气溶胶辅助CVD制备li掺杂ZnO薄膜的增强霍尔迁移率和d^0铁磁性

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-05-12 DOI: 10.1007/s13391-023-00438-z

Muhammad Arief Mustajab, Pepen Arifin, Suprijadi Suprijadi, Toto Winata

{"title":"Enhanced Hall Mobility and d0 Ferromagnetism in Li-Doped ZnO Thin Films Prepared by Aerosol-Assisted CVD","authors":"Muhammad Arief Mustajab, Pepen Arifin, Suprijadi Suprijadi, Toto Winata","doi":"10.1007/s13391-023-00438-z","DOIUrl":"10.1007/s13391-023-00438-z","url":null,"abstract":"<div><p>Zinc oxide (ZnO) thin films with different concentrations of lithium, from 0 to 15 mol%, have been grown on Si(100) substrates by employing aerosol-assisted chemical vapor deposition (AACVD). The structural, electronic, and magnetic properties of the ZnO thin films were investigated as the effect of Li doping concentration. SEM images of surface morphology reveal that the undoped and low-concentration Li-doped ZnO thin films exhibit irregular ellipsoid grains. In comparison, the ZnO thin films with higher Li concentration consist of multi-aligned rod-like and hexagonal-shaped grains. XRD pattern analysis confirms that all grown ZnO thin films exhibit a single polycrystalline phase of hexagonal wurtzite crystal. The lattice reduction was observed in the Li-doped thin films indicating that the substitutional Li effectively occupied the Zn lattice site. The Hall effect measurement demonstrates that Li-doped ZnO films possess <i>p</i>-type conductivity. The resistivity of Li-doped ZnO thin films decreases with an increase in Li doping concentration while the hole carrier density increases. The Hall mobility tends to increase as more Li doping concentration is given, with the highest Hall mobility obtained from 15 mol% Li-doped film with a value of 85.88 cm<sup>2</sup>/V s. The VSM study demonstrates that all grown ZnO thin films exhibit an M-H hysteresis curve, indicating d<sup>0</sup> ferromagnetism behavior at room temperature, with coercivity ranging from 202 to 373 Oe. The highest saturation magnetization was obtained from 10 mol% Li-doped films, with a value of 5.55 × 10<sup>–2</sup> emu/g.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"111 - 121"},"PeriodicalIF":2.1,"publicationDate":"2023-05-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42409368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Electron Irradiation on Electronic Structure of Ni41Co6Mn43Sn10 Alloys 电子辐照对Ni_41Co_6Mn_43Sn_10合金电子结构的影响

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-05-08 DOI: 10.1007/s13391-023-00432-5

Sibo Sun, Jun Zhang, Zhiyong Gao, Wei Cai

引用次数: 0

Formation and Control of Hexagonal Pyramid Structures from GaN -Based Pillar-Shaped Structures Using Focused Ion-Beam Process 利用聚焦离子束工艺从氮化镓基柱状结构中形成和控制六方金字塔结构

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-05-08 DOI: 10.1007/s13391-023-00435-2

Woon Jae Ruh, Hyeon Jin Choi, Jong Hoon Kim, Seung Woo Jeon, Young-Kyun Noh, Mino Yang, Young Heon Kim

引用次数: 0