Electronic Materials Letters最新文献_第10页

A Novel Sensor for the Detection of n-Butanol Based on CoMn2O4 Nanoparticles 基于 CoMn2O4 纳米粒子的新型正丁醇检测传感器

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-05-13 DOI: 10.1007/s13391-024-00498-9

Juan Pablo Morán-Lázaro, Maykel Courel-Piedrahita, Alex Guillén-Bonilla, Florentino López-Urías, Héctor Guillén-Bonilla, Víctor Manuel Soto-García, Aldo Palafox-Corona, David Alberto Hernández-Poot

{"title":"A Novel Sensor for the Detection of n-Butanol Based on CoMn2O4 Nanoparticles","authors":"Juan Pablo Morán-Lázaro, Maykel Courel-Piedrahita, Alex Guillén-Bonilla, Florentino López-Urías, Héctor Guillén-Bonilla, Víctor Manuel Soto-García, Aldo Palafox-Corona, David Alberto Hernández-Poot","doi":"10.1007/s13391-024-00498-9","DOIUrl":"10.1007/s13391-024-00498-9","url":null,"abstract":"<div><p>In this paper, we studied the alcohol-sensing properties of CoMn<sub>2</sub>O<sub>4</sub> nanoparticles for the first time. The CoMn<sub>2</sub>O<sub>4</sub> nanoparticles were prepared via a simple microwave-assisted colloidal method using cobalt nitrate, manganese nitrate, dioctyl sulfosuccinate sodium salt, and ethylene glycol as a solvent. Various techniques were used to characterize the structural, morphological, and optical properties of CoMn<sub>2</sub>O<sub>4</sub>. The crystal structure of CoMn<sub>2</sub>O<sub>4</sub> was found after calcination at a temperature of 400 °C. The Raman spectrum showed seven vibrational bands, while the optical absorption spectrum showed three bands, confirming the spinel CoMn<sub>2</sub>O<sub>4</sub>. Morphological analysis revealed that the porous microstructure of CoMn<sub>2</sub>O<sub>4</sub> was composed of nanoparticles with a size distribution of 16 to 58 nm. Gas sensors were fabricated with the CoMn<sub>2</sub>O<sub>4</sub> powders calcined at 400 °C using the brush-coating method, and experimental results showed that CoMn<sub>2</sub>O<sub>4</sub> nanoparticles were more sensitive to <i>n</i>-butanol than isopropanol and ethanol at an operating temperature of 185 °C. The CoMn<sub>2</sub>O<sub>4</sub> sensor showed a response of 6.6 at 50 ppm <i>n</i>-butanol with good stability, reproducibility, and repeatability. The present article provides a new sensing material that could be used as an <i>n</i>-butanol sensor with significant benefits for human health.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"610 - 620"},"PeriodicalIF":2.1,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140938205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-Dimensional Leafy Fe/N-Doped Carbon Nanomaterials Derived from Vitamin C-Modified ZIF-L for Efficient Oxygen Reduction Reaction 维生素 C 改性 ZIF-L 衍生的二维叶状 Fe/N 掺杂碳纳米材料用于高效氧还原反应

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-05-08 DOI: 10.1007/s13391-024-00496-x

Yating Zhang, Xiaobo Wang, Meng Chen, Pei He, Zhenghan Kong

{"title":"Two-Dimensional Leafy Fe/N-Doped Carbon Nanomaterials Derived from Vitamin C-Modified ZIF-L for Efficient Oxygen Reduction Reaction","authors":"Yating Zhang, Xiaobo Wang, Meng Chen, Pei He, Zhenghan Kong","doi":"10.1007/s13391-024-00496-x","DOIUrl":"10.1007/s13391-024-00496-x","url":null,"abstract":"<div><p>Oxygen reduction reaction (ORR) is an important half-reaction in various energy devices such as fuel cells. Here, 2D dendritic Fe/N co-doped carbon-based nanosheet composites (L-Fe-CNT@NCS-900) were obtained by high-temperature calcination using ZIF-L generated in the aqueous phase as a precursor and Vitamin C as a modifier. It is found that the catalysts calcined at 900℃ possessed the large specific surface area and the pore size distribution graphs showed a narrow micropore size distribution centered at about 1.8 nm. Furthermore, the Fe-N-C species was detected, which further improved the ORR performance as an active center. Thus, the L-Fe-CNT@NCS-900 calcined at 900 °C achieved the best ORR performance with a half-wave potential (E<sub>1/2</sub>) of 0.85 V, and the hydrogen peroxide yield is only about 4% during the ORR process. Meanwhile, L-Fe-CNT@NCS-900 exhibited outstanding methanol resistance. This work proposes a new strategy for constructing an efficient electrocatalysts for oxygen reduction reaction.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"592 - 602"},"PeriodicalIF":2.1,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140938206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tl3PbI5 Nanocrystals for Ultraviolet Photovoltaics 用于紫外线光伏的 Tl3PbI5 纳米晶体

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-05-04 DOI: 10.1007/s13391-024-00499-8

Wooyeon Kim, Bonkee Koo, Jaeyeon Kim, In Choi, Seongyeon Hwang, Min Jae Ko

{"title":"Tl3PbI5 Nanocrystals for Ultraviolet Photovoltaics","authors":"Wooyeon Kim, Bonkee Koo, Jaeyeon Kim, In Choi, Seongyeon Hwang, Min Jae Ko","doi":"10.1007/s13391-024-00499-8","DOIUrl":"10.1007/s13391-024-00499-8","url":null,"abstract":"<div><p>Tl<sub>3</sub>PbI<sub>5</sub> exhibits a bandgap energy suitable for absorbing visible and ultraviolet spectra along with a high absorption capability, rendering it a promising candidate for a broader range of solar energy applications. However, its applicability as a light absorber in solar cells is yet to be experimentally confirmed. In this study, we systemically investigate the synthesis process and the crystallographic and chemical properties of Tl<sub>3</sub>PbI<sub>5</sub> nanocrystals. These results enable the optimization of Tl<sub>3</sub>PbI<sub>5</sub> nanocrystals for use as a light absorber. In addition, a solid-state ligand exchange method employing methyl acetate (MeOAc) is introduced to construct a Tl<sub>3</sub>PbI<sub>5</sub> absorption layer for photovoltaic applications. This method facilitates the preparation of multilayer thin films with precise thickness control. The optimally designed Tl<sub>3</sub>PbI<sub>5</sub>-based solar cell achieves a power conversion efficiency (<i>PCE</i>) of 0.20%. Furthermore, the device retains over 90% of its <i>PCE</i> after 2000 h at 25 °C and 60% relative humidity, indicating the potential of Tl<sub>3</sub>PbI<sub>5</sub>-based photovoltaics for reliable solar energy harvesting.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"584 - 591"},"PeriodicalIF":2.1,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140884163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phenyltrimethylammonium as an Interlayer Spacer for Stable Formamidinium-Based Quasi-2D Perovskite Solar Cells 苯基三甲基铵作为稳定的甲脒基准二维过氧化物太阳能电池的层间垫片

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-04-26 DOI: 10.1007/s13391-024-00497-w

Bumjin Gil, Jinhyun Kim, Byungwoo Park

{"title":"Phenyltrimethylammonium as an Interlayer Spacer for Stable Formamidinium-Based Quasi-2D Perovskite Solar Cells","authors":"Bumjin Gil, Jinhyun Kim, Byungwoo Park","doi":"10.1007/s13391-024-00497-w","DOIUrl":"10.1007/s13391-024-00497-w","url":null,"abstract":"<div><p>Quasi-2D perovskite materials possess great potential in improving the stability of perovskite solar cells due to their superior chemical and structural stableness compared to 3D counterparts. Here, commonly-used 3D formamidinum lead iodide (FAPbI<sub>3</sub>) perovskite is alloyed by addition of quaternary cation phenyltrimethylammonium (PTMA) up to 33% (<i>n</i> = 5), which forms quasi-2D perovskite phase that acts beneficial to charge transport and stability. Since the detailed structural analyses regarding this quaternary ammonium salt is still lacking, we attempt to provide how the presence of 2D perovskite affects the crystal structure based on x-ray diffraction techniques. It is shown that PTMA cations directs FAPbI<sub>3</sub> to have textured orientation and reduced strains. This led to enhanced extraction of photogenerated carriers and reduced defects, making it promising material for solar cell applications. The champion device remains stable under 60 °C or 1 sun for 700 h, demonstrating its potential for optoelectronic devices requiring long-term stability.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 6","pages":"791 - 798"},"PeriodicalIF":2.1,"publicationDate":"2024-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140799574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetite–Polyaniline Nanocomposite for Non-Volatile Memory and Neuromorphic Computing Applications 用于非易失性存储器和神经形态计算应用的磁铁矿-多苯胺纳米复合材料

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-04-16 DOI: 10.1007/s13391-024-00495-y

Ishika U. Shah, Snehal L. Patil, Sushilkumar A. Jadhav, Tukaram D. Dongale, Rajanish K. Kamat

{"title":"Magnetite–Polyaniline Nanocomposite for Non-Volatile Memory and Neuromorphic Computing Applications","authors":"Ishika U. Shah, Snehal L. Patil, Sushilkumar A. Jadhav, Tukaram D. Dongale, Rajanish K. Kamat","doi":"10.1007/s13391-024-00495-y","DOIUrl":"10.1007/s13391-024-00495-y","url":null,"abstract":"<div><p>Conducting polymers are proving to be useful for construction of resistive switching devices. This work reports the fabrication of a resistive switching device using Magnetite-Polyaniline (Fe<sub>3</sub>O<sub>4</sub>-PANI) nanocomposite. The device showed good non-volatile memory properties and can mimic neuromorphic synaptic behavior. Initially, Fe<sub>3</sub>O<sub>4</sub> nanoparticles were synthesized using the co-precipitation method and PANI by oxidative polymerization and their nanocomposites of different compositions were prepared and fully characterized. The 10% Fe<sub>3</sub>O<sub>4</sub>-PANI-based RS device outperforms all others in terms of I–V switching performance. Furthermore, the optimized device (10% Fe<sub>3</sub>O<sub>4</sub>-PANI) has tuneable I–V characteristics. The device demonstrated excellent analog switching at ± 1.5 V and digital switching at ± 2.5 V. The memristive behavior of the Ag/10% Fe<sub>3</sub>O<sub>4</sub>-PANI/FTO device was confirmed by the pinched hysteresis loop in the I–V curves at different voltages, as well as the double-valued charged-flux characteristics. The device has good cycle-to-cycle reliability for switching voltages and switching currents, as demonstrated by the Weibull distribution and other statistical measures. Moreover, the device can retain memory states up to 6 × 10<sup>3</sup> s and shows a switching stability of 2 × 10<sup>4</sup> cycles. The device also showed linear potentiation and depression characteristics and mimicked excitatory post-synaptic current (EPSC) and paired-pulse facilitation (PPF) index properties similar to its biological counterpart. According to the charge transport model fitting results, the Ohmic and Child’s square laws dominated in both analog and digital switching processes, and RS occurs due to the filamentary process.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"381 - 392"},"PeriodicalIF":2.1,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140609086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optoelectronic Synapse Behaviors of HfS2 Grown via Molten Salt Flux Method 熔盐通量法生长的 HfS2 的光电突触行为

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-04-13 DOI: 10.1007/s13391-024-00494-z

Mi Ji Kwon, Nguyen Vu Binh, Su-yeon Cho, Soo Bin Shim, So Hyun Ryu, Yong Jae Jung, Woo Hyun Nam, Jung Young Cho, Jun Hong Park

{"title":"Optoelectronic Synapse Behaviors of HfS2 Grown via Molten Salt Flux Method","authors":"Mi Ji Kwon, Nguyen Vu Binh, Su-yeon Cho, Soo Bin Shim, So Hyun Ryu, Yong Jae Jung, Woo Hyun Nam, Jung Young Cho, Jun Hong Park","doi":"10.1007/s13391-024-00494-z","DOIUrl":"10.1007/s13391-024-00494-z","url":null,"abstract":"<div><p>Layered two-dimensional materials are promising candidates for next-generation semiconductor platforms owing to their atomically thin bodies, and it is crucial to develop a method for their large-scale synthesis for integrating these materials into the fabrication process. Here, we report the synthesis of a centimeter-scale HfS<sub>2</sub> ingot using the molten salt flux method (MSFM). The structure, crystallinity, and uniformity of the synthesized HfS<sub>2</sub> sample were verified using X-ray diffraction and Raman spectroscopy. The chemical properties were investigated using X-ray photoelectron spectroscopy. A HfS<sub>2</sub> synaptic field effect transistor (FET) was fabricated to confirm its electrical uniformity and semiconducting nature, with an average mobility of 10.6 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. The synaptic plasticity of the HfS<sub>2</sub> synaptic FET was investigated by applying light pulses (405 nm) in different modulation configurations. Paired-pulse facilitation was achieved by applying a continuous light pulse with a negative gate bias voltage. The modulation of synaptic weight was demonstrated under different stimulation conditions, which emulates the human brain. Furthermore, the linearity of the HfS<sub>2</sub> synaptic device was optimized based on the frequency of the pulses to enhance learning accuracy. The approach reported here encourages the large-scaled production of transition metal dichalcogenides (TMDs) for use in artificial synaptic transistors.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"559 - 570"},"PeriodicalIF":2.1,"publicationDate":"2024-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140588054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Co-W and Co-Fe-W Diffusion Barriers on the Reliability of the Solder/Cu Interface during Reflow Conditions Co-W 和 Co-Fe-W 扩散屏障对回流条件下焊料/铜界面可靠性的影响

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-04-13 DOI: 10.1007/s13391-024-00491-2

Yuexiao Liu, Chongyang Li, Peixin Chen, Jinyang Liu, Anmin Hu, Ming Li

{"title":"Effect of Co-W and Co-Fe-W Diffusion Barriers on the Reliability of the Solder/Cu Interface during Reflow Conditions","authors":"Yuexiao Liu, Chongyang Li, Peixin Chen, Jinyang Liu, Anmin Hu, Ming Li","doi":"10.1007/s13391-024-00491-2","DOIUrl":"10.1007/s13391-024-00491-2","url":null,"abstract":"<div><p>Efficient diffusion barriers are necessary to prevent the formation of copper-tin intermetallic compounds (IMCs) in advanced packaging for Sn/Cu micro-bumps. This study investigated the interfacial properties of solder and Ni, Co-9W, Co-20W, Co-20Fe-10W, and Co-36Fe-17W barriers and determined the thickness of IMCs formed between Sn and these barriers after up to 15 reflows. Among the five barriers, Co-36Fe-17W proved to be the most effective in inhibiting the reaction of liquid Sn solder. At the Sn/Co-W interface, CoSn<sub>3</sub> IMC was formed, while at the Sn/Co-Fe-W interface, CoSn<sub>3</sub> IMC and FeSn<sub>2</sub> IMC were observed. The contact angles of these layers were measured and found to be 18°, 22°, 25°, 29°, and 27°, respectively. The results showed that an increase in W content in Co-W led to an increase in the contact angle, while the intrinsic wettability of Co-Fe-W decreased with an increase in Fe content. The shear strengths of the five joints were 27 MPa, 31 MPa, 25 MPa, 25 MPa, and 26 MPa, respectively, with different fracture modes observed. The Co-Fe-W-Sn layer was partially peeling from the diffusion barriers in SAC305/Co-20Fe-10W, and the fracture surfaces exhibited an irregular and rough state, which was attributed to the increasing Fe and W contents. These findings offer valuable insights for enhancing the reliability of electronic packages.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"517 - 524"},"PeriodicalIF":2.1,"publicationDate":"2024-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140588270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Self-Healing of Kirkendall Voids and IMC Growth in the Interfacial Reaction of Novel Ni/Cu bi-layer Barrier and Solder 新型镍/铜双层阻焊层和焊料界面反应中 Kirkendall 空洞的自愈合和 IMC 生长

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-04-03 DOI: 10.1007/s13391-024-00492-1

Haokun Li, Chongyang Li, Peixin Chen, Rui Xi, Feifei Li, Huiqin Ling, Ming Li

{"title":"Self-Healing of Kirkendall Voids and IMC Growth in the Interfacial Reaction of Novel Ni/Cu bi-layer Barrier and Solder","authors":"Haokun Li, Chongyang Li, Peixin Chen, Rui Xi, Feifei Li, Huiqin Ling, Ming Li","doi":"10.1007/s13391-024-00492-1","DOIUrl":"10.1007/s13391-024-00492-1","url":null,"abstract":"<div><p>Single Ni layer is often inserted as diffusion barrier between Cu pillar and Sn-based solder to avoid excessive growth of brittle intermetallic compounds (IMCs) and consequent Kirkendall voids (KVs) in microbumps. However, with shrinking size of microbumps, Ni layer cannot maintain the inhibition performance as its thickness is reduced as well. In this work, Ni/Cu bi-layer barrier was employed at Cu-Sn interface, which was expected to reduce diffusion by rapidly generated Cu-Sn IMC retarding the diffusion of Ni. IMC growth behavior and interfacial reaction during isothermal aging were investigated. The self-healing phenomenon of KVs was detected during aging at 150 °C . It’s attributed to the transformation from Cu<sub>3</sub>Sn to Cu<sub>6</sub>Sn<sub>5</sub>. The novel barrier exhibited excellent inhibition property compared with single Ni layer with slower IMC growth rate and less Cu substrate diffusion. Moreover, during 170 °C aging test, the Ni/Cu bi-layer barrier showed no sign of depletion until 600 h, while the single Ni barrier was completely depleted after 144 h. Such excellent inhibition property is beneficial to the future application of ultra-thin barrier layer in microbumps.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"509 - 516"},"PeriodicalIF":2.1,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140588053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploration about the Electrolyte System of Li-ion Batteries for the Wide Temperature Range Operation 探索锂离子电池在宽温度范围内工作的电解质系统

IF 2.4 4区材料科学

Electronic Materials Letters Pub Date : 2024-03-29 DOI: 10.1007/s13391-024-00488-x

Ok-Jeong Kim, Yeong-Hyun Cho, Jung-Jin Kang, Young-Sang Yu, Chunjoong Kim, Gi-Yeong Yun

引用次数: 0

Structural, Optical, Electrical, and Nanomechanical Properties of F-Doped Sno2 Fabricated by Ultrasonic Spray Pyrolysis 超声喷雾热解法制造的掺 F Sno2 的结构、光学、电学和纳米力学性能

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2024-03-23 DOI: 10.1007/s13391-024-00489-w

Jaewon Kim, Gahui Kim, Young-Bae Park

{"title":"Structural, Optical, Electrical, and Nanomechanical Properties of F-Doped Sno2 Fabricated by Ultrasonic Spray Pyrolysis","authors":"Jaewon Kim, Gahui Kim, Young-Bae Park","doi":"10.1007/s13391-024-00489-w","DOIUrl":"10.1007/s13391-024-00489-w","url":null,"abstract":"<div><p>Transparent conductive oxides (TCOs) are in high demand by optoelectronic devices such as light-emitting diodes, phototransistors, touchscreens, solar cells, and low-emissivity windows. Tin-doped indium oxide (ITO) material is the most predominant in the market and is utilised among the various TCO materials. However, the lack of raw materials and the high cost of indium materials have necessitated the exploration of cost-effective TCOs that can serve as viable alternatives without compromising the desired optical and electrical properties. Tin oxide (SnO<sub>2</sub>) films emerge as a promising candidate, offering several benefits, including abundant material sources, inexpensiveness, and non-toxicity. It anticipates producing a higher visible transmittance, excellent electrical conductivity, and good mechanical properties compared to ITO. Moreover, SnO<sub>2</sub> can increase its electrical conductivity by introducing representative dopant elements such as Sb, and F. However, structural, optical, and mechanical properties can affect additional dopant elements. Herein, we have demonstrated fluorine-doped tin oxide (FTO) thin films as a function of F dopant concentration by ultrasonic spray pyrolysis. The FTO thin films achieved excellent properties for FTO coatings such as polycrystalline structure, electrical conductivity (<i>ρ</i> = 9.1 × 10<sup>–5</sup> Ω cm), transmittance in the visible region (average visible transmittance up to 85.0%, with peak values of 96.5%) with a wider band gap between 3.80 and 4.28 eV. The increasing elastic modulus and hardness are related to significant grain boundaries, reaching the highest values of 154.5 ± 18.6 and 12.3 ± 3.6 GPa, respectively. The measured interface adhesion between SnO<sub>2</sub>/Si substrate is 9.32 J/m<sup>2</sup>.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"402 - 413"},"PeriodicalIF":2.1,"publicationDate":"2024-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140201141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0