Electronic Materials Letters最新文献

{"title":"Perspective: Atomic Layer Deposition Strategies for Surface Passivation of Metal-Halide Perovskite Absorbers","authors":"George Kwesi Asare,&nbsp;Joshua Sraku Adu,&nbsp;Byungha Shin,&nbsp;David J. Fermin,&nbsp;Helen Hejin Park","doi":"10.1007/s13391-025-00563-x","DOIUrl":"10.1007/s13391-025-00563-x","url":null,"abstract":"<div><p>Recent advancements have been made in perovskite solar cells (PSCs) using atomic layer deposition (ALD) of aluminum oxide (Al₂O₃) and other suitable metal oxides such as zirconium oxide (ZrO₂) as a perovskite surface passivation technique. ALD has demonstrated significant potential for enhancing photovoltaic (PV) performance and the long-term light, thermal, humidity, and ultraviolet (UV) stability of PSCs by addressing surface defects leading to higher charge extraction and mitigating environmental degradation with only a few nanometers of thickness. However, direct ALD deposition on perovskite films can sometimes degrade the perovskite film from ALD precursor reactivity, elevated temperatures, and vacuum-induced instabilities. This perspective discusses recent strategies, challenges, and future directions for surface passivation of the perovskite solar absorber using ALD to improve device performance and long-term stability for commercialization of PSCs.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"331 - 336"},"PeriodicalIF":2.1,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00563-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Device Failure Analysis with Epi-Si Wafer Using Raman Shift Matching Method","authors":"Tae Min Choi,&nbsp;Eunmi Choi,&nbsp;JinUk Yoo,&nbsp;Eun Su Jung,&nbsp;Hwa Rim Lee,&nbsp;Songhun Yoon,&nbsp;Sung Gyu Pyo","doi":"10.1007/s13391-025-00567-7","DOIUrl":"10.1007/s13391-025-00567-7","url":null,"abstract":"<div><p>In this study, a multi-wavelengths Raman spectroscopy method was employed to evaluate the quality of epitaxial grown silicon (Epi-Si) wafers by analyzing defects, stress, and crystallinity. Unlike conventional electrical property analysis, which is typically conducted post-process through device failure testing, this study demonstrated the potential for non-destructive and real-time assessment of thin film properties at the wafer stage using Raman spectroscopy. By comparing two 8-inch wafers fabricated under different deposition conditions, Raman shift and Full Width at Half Maximum (FWHM) were established as primary evaluation indicators to analyze the point-specific characteristics of the wafers. We applied multi-wavelength Raman spectroscopy with 532 nm and 405 nm laser to measure stress distribution of wafer - scale Epi-Si layers and compared it with wafer failure maps to demonstrate the validity of stress analysis of thin films using Raman spectroscopy. The residual stress and FWHM of epitaxially grown Si thin films were quantitatively analyzed for 9 points of Epi-Si. The point-by-point residual stress and crystallinity evaluations measured by Raman spectroscopy were in good agreement with the wafer failure map, and the stress variation in the failure region could be evaluated highlighting g potential of Raman spectroscopy enabling precise analysis across a broader range of samples and having the practical utility for non-destructive, early-stage assessment of thin film properties, as well as for the in-situ detection of defects and stress.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 4","pages":"532 - 539"},"PeriodicalIF":2.6,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring Fe-Doping Effects in K0.5Na0.5NbO3 (KNN) for Enhancing Electrical and Magnetic Properties","authors":"Pooja Dahiya,&nbsp;Ashima Hooda","doi":"10.1007/s13391-025-00564-w","DOIUrl":"10.1007/s13391-025-00564-w","url":null,"abstract":"<p>K_0.5Na_0.5NbO₃-based ceramics owing to their outstanding properties have compelled the researcher’s attention as an innovative multifunctional material. The structural, dielectric, electrical and magnetic properties of polycrystalline perovskites of K_0.5Na_0.5Fe_<i>x</i>Nb_1–<i>x</i>O₃ (<i>x</i> = 0.10, 0.15, 0.20) prepared by the conventional solid-state reaction method were investigated systematically. Interestingly, the XRD results revealed the successful formation of pure perovskite orthorhombic crystal structures without any secondary phases. Furthermore, Rietveld refinement analysis indicated a significant variation in the lattice parameters and unit cell volume. The microstructural analysis emphasized unique irregular rectangular grain morphologies with an average size of 0.6–0.9 μm, while EDX spectra affirmed compositional uniformity. Impedance spectroscopy provided a thorough analysis of the contributions from grain and grain boundary effects, elucidating the mechanisms behind the enhanced dielectric constant. The narrowing of the band gap is assessed using diffuse reflectance spectroscopy. The prepared samples can be utilized to improve the performance of materials used in optical data storage devices. The presence of Fe in various oxidation states, including Fe²⁺and Fe³⁺ was explored through X-ray photoelectron spectroscopy analysis. The magnetic measurements show that the prepared samples exhibit paramagnetic behavior. This research explores the ultimate functionalities of these samples paving the way for their application in advanced electronic and magnetic technologies.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"375 - 394"},"PeriodicalIF":2.1,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Ar/N2 Two-Step Plasma Treatments on the Interfacial Characteristics of Low-Temperature Cu-Cu Direct Bonding","authors":"Gahui Kim,&nbsp;Seonghun Choi,&nbsp;Yongbeom Kwon,&nbsp;Sarah Eunkyung Kim,&nbsp;Hoo-Jeong Lee,&nbsp;Young-Bae Park","doi":"10.1007/s13391-025-00565-9","DOIUrl":"10.1007/s13391-025-00565-9","url":null,"abstract":"<div><p>The effects of Ar/N₂ two-step plasma treatments on the interfacial adhesion energies of low-temperature Cu–Cu bonding interfaces were systematically investigated with four-point bending (4-PB) test. It was confirmed that the Cu surface roughness had increased, and a Cu nitride layer was formed by the Ar/N₂ two-step plasma treatment. X-ray photoelectron spectroscopy clearly showed that the Ar/N₂ two-step plasma treatment formed less Cu oxide due to the formation of a Cu nitride layer. As a result of the 4-PB test, as the N₂ RF power was increased, the interfacial adhesion energy decreased. An analysis of the delaminated surface after the 4-PB test confirmed that a Cu nitride layer was not formed, which was thought to be due to decomposition during the bonding process. As the N₂ RF power was increased, the roughness also increased, leading to poor Cu-Cu bonding. The decrease in Cu-N bonding resulted in the progression of Cu oxidation. Additionally, the interfacial adhesion energy decreased due to the formation of a disordered Cu layer on the Cu surface.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"429 - 442"},"PeriodicalIF":2.1,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Grain Size Effects on Interfacial Reactions in Fe-Co Alloy Barrier Micro-bumps","authors":"Chongyang Li,&nbsp;Pengfei Chang,&nbsp;Peixin Chen,&nbsp;Anmin Hu,&nbsp;Ming Li","doi":"10.1007/s13391-025-00562-y","DOIUrl":"10.1007/s13391-025-00562-y","url":null,"abstract":"<div><p>Micro-bump plays a pivotal role in enabling high density interconnect required for three-dimensional integrated-circuits (3D ICs) packaging. However, the growth rate of intermetallic compounds (IMCs) in micro-bumps increases with shrinking bump size due to the emergence of surface diffusion channels, posing significant challenges to the reliability of small-sized micro-bumps. In this study, Fe-Co alloys were introduced as innovative diffusion barrier layers to effectively suppress IMC growth in solder bumps, achieving an exceptionally low IMC growth rate of 0.0118 μm/h^0.5. No sidewall IMCs were observed in micro-bumps, demonstrating the Fe-Co alloys’ effectiveness in inhibiting surface diffusion. Notably, an interesting size effect on IMC growth was observed, with larger Cu plate solder joints exhibiting faster IMC growth compared to 12 μm micro-bumps during aging. This behavior was attributed to grain size differences in the Fe-Co barriers, where smaller grain sizes in larger joints facilitated grain boundary diffusion, thereby accelerating IMC growth. Finite element analysis (FEA) simulations further demonstrated that variations in current density during electrodeposition led to differences in grain size. These findings propose a powerful candidate for high-performance barrier materials in small-sized micro-bumps and provide critical insights into the role of grain boundary diffusion in IMC growth, offering valuable strategies for enhancing the reliability of electronic packaging.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"473 - 485"},"PeriodicalIF":2.1,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Flexible Micro-LEDs: Advanced Fabrication Techniques and Applications","authors":"Sung Jin Seo,&nbsp;Sohyeon Park,&nbsp;Ho Won Jang","doi":"10.1007/s13391-025-00559-7","DOIUrl":"10.1007/s13391-025-00559-7","url":null,"abstract":"<div><p>Flexible micro light-emitting diodes (micro-LEDs) have garnered significant attention due to their exceptional properties, including high luminance, energy efficiency, and mechanical robustness, positioning them as a promising technology for next-generation displays and electronic devices. As the Internet of Things (IoT) paradigm advances, the demand for portable and adaptable devices has led to an acceleration in flexible micro-LED research. This review comprehensively examines advanced fabrication techniques for flexible micro-LEDs, encompassing epitaxial growth, various lift-off processes, and mass transfer strategies. These methods are systematically integrated to optimize device performance and scalability. Furthermore, it explores diverse applications of flexible micro-LEDs, ranging from flexible displays and biomedical sensors to IoT and smart devices. These applications harness the unique properties of flexible micro-LEDs, enabling their integration into various form factors and opening up new possibilities for user interfaces and information displays. This work emphasizes the transformative role of flexible micro-LEDs in driving innovations across multiple fields, paving the way for the next generation of flexible and intelligent technologies.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"311 - 330"},"PeriodicalIF":2.1,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00559-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In-situ Stress Analysis of Nickel Nanoparticle Sintering with Metal Additive in Multi-Layer Ceramic Capacitors","authors":"Youngran Jung,&nbsp;Wonhyo Joo,&nbsp;Kyung Rul Lee,&nbsp;Cheol Kim,&nbsp;Min-Jung Choi,&nbsp;Young-Chang Joo,&nbsp;So-Yeon Lee","doi":"10.1007/s13391-025-00556-w","DOIUrl":"10.1007/s13391-025-00556-w","url":null,"abstract":"<div><p>In the pursuit of increasing the sintering temperature of multi-layer ceramic capacitors (MLCCs) of the metal electrode layer, this study examines the effect of secondary metal additives on the sintering behavior of nickel (Ni) nanoparticles. Traditionally, the discrepancy in sintering temperatures between metal and dielectric particles poses a challenge in MLCC fabrication, often resulting in uneven layer formation and device shortage. We introduced 0.1 atomic percent of tin (Sn), antimony (Sb), and cobalt (Co) into Ni nanoparticles and investigated their influence on sintering temperatures in the metal layer. Utilizing in-situ stress analysis and field emission scanning electron microscope (FE-SEM) imaging, we found that Sn and Sb effectively hindered the onset of neck formation and coalescence by forming intermetallic phases, whereas Co showed no such effect. These findings suggest that the strategic addition of specific secondary metals can shift the sintering behavior initiation of Ni related to the structural integrity during the MLCC fabrication and the performance of MLCCs. The research highlights the potential of using secondary metal additives to refine the thermal processing steps in electronic component manufacturing, aiming for more reliable and efficient devices.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"464 - 472"},"PeriodicalIF":2.1,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00556-w.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dual Plasma-Annealing Based TiO2/TiO2−x Memristors for Enhanced Switching Mechanism","authors":"Beom Gu Lee,&nbsp;Jae-Yun Lee,&nbsp;Jeong Hun Choi,&nbsp;Jeong Moo Seo,&nbsp;Sung-Jin Kim","doi":"10.1007/s13391-025-00555-x","DOIUrl":"10.1007/s13391-025-00555-x","url":null,"abstract":"<div><p>High stretchability and flexibility are essential characteristics for wearable devices that attach to a living body to store data and analyze electrical signals. Memristors, the promising next generation of intelligent semiconductors, are expected to be lightweight and highly integrated by dramatically reducing device size due to its unique characteristics. The non-volatile nature of memristors is expected to be utilized in wearable devices that can store and analyze bioelectrical signals. To improve the resistive switching mechanism of the memristor, annealing process above 400 °C are widely utilized due to the certainty of the process. However, it is difficult to apply high-temperature annealing processes to flexible substrate like polyethylene terephthalate or polyethylene naphthalate. Here, we developed the low temperature Dual plasma-annealing treatment (DPA) process that combines a low-temperature annealing treatment process with an O₂ plasma process for glass/ITO/TiO₂/TiO_2−x/Ag thin film-based memristor devices, and to analyze the effect of this series DPA processes on memristor devices, we fabricated devices with different process temperatures. Also, we measured the enhancement in I–V curve, retention test and different of bandgap and ohmic conduction. The results showed that the resistive switching behavior of the device processed at 160 °C was best enhanced temperature and confirmed that the DPA process can replace the high temperature annealing treatment process and be applied to flexible substrates.</p><h3>Graphical Abstract</h3><p>Beom Gu Lee et al., TiO₂ memristors prepared based on sputtering-processes\u0000have many advantages, such as the characteristic of resistive switching\u0000mechanism, However, these devices require high-temperature annealing, which\u0000poses challenges for their application on high-stretchable substrates. This work\u0000has shown that the performance of the devices switching mechanism can be\u0000improved by subjecting the devices to plasma treatment with low temperature\u0000annealing process. </p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"366 - 374"},"PeriodicalIF":2.1,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inorganic Halide Perovskite Quantum Dots for Memristors","authors":"Hyo Min Cho,&nbsp;Ho Won Jang","doi":"10.1007/s13391-025-00560-0","DOIUrl":"10.1007/s13391-025-00560-0","url":null,"abstract":"<div><p>Memristor, a combination of memory and resistor, was first proposed as the fourth fundamental passive circuit element. While halide perovskites have emerged as promising materials for memristor devices, organic-inorganic hybrid perovskites face challenges such as hygroscopicity and thermal instability, limiting their long-term applicability. This paper focuses on inorganic halide perovskite quantum dots (IHPQDs), which offer enhanced environmental stability and unique properties, including high tolerance to native defects and ion migration capability. This paper provides a comprehensive review of recent advancements in IHPQDs, covering their crystal structures, synthesis techniques, and operational mechanisms in memristor devices. Unlike previous studies that predominantly explored bulk halide perovskites, we emphasize the role of IHPQDs in resistive switching memory and neuromorphic computing, highlighting their potential for multilevel resistance states and low-power operation. Additionally, this review addresses practical challenges, including thin-film uniformity, charge transport layer integration, and lead-free alternatives, which are critical for the commercialization of IHPQDs-based memristors. By proposing actionable strategies and future research directions, we aim to bridge the gap between fundamental research and real-world applications, positioning IHPQDs as key materials for next-generation electronic devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"291 - 310"},"PeriodicalIF":2.1,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00560-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"3D Integrated Process and Hybrid Bonding of High Bandwidth Memory (HBM)","authors":"Chae Yeon Lee,&nbsp;Chae Ho Won,&nbsp;Seyeon Jung,&nbsp;Eun Su Jung,&nbsp;Tae Min Choi,&nbsp;Hwa Rim Lee,&nbsp;JinUk Yoo,&nbsp;Songhun Yoon,&nbsp;Sung Gyu Pyo","doi":"10.1007/s13391-025-00557-9","DOIUrl":"10.1007/s13391-025-00557-9","url":null,"abstract":"<div><p>This review paper systematically analyzes the recent advancements in semiconductor packaging technology, focusing on hybrid bonding technology. Hybrid bonding is a crucial technique for enhancing integration density and thermal management in high-performance semiconductor devices by directly bonding metal to an insulator. It is categorized into wafer-to-wafer (W2W), die-to-wafer (D2W), and die-to-die (D2D) methods.</p><p>This paper compares the characteristics, advantages, and limitations of each method while presenting technical approaches for performance improvements. Innovations such as new dielectric materials, surface and interface modifications, and optimizing the crystallinity and crystal orientation of metals can significantly enhance the reliability and performance of hybrid bonding. These strategies boost data transfer rates between memory and processors while reducing power consumption and improving overall system performance. This latest research on maximizing hybrid bonding performance is also discussed, emphasizing its potential in the next generation of memory technologies, including high bandwidth memory. This research lays a critical foundation for further advancements in high-performance 3D integrated circuit technology.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"395 - 419"},"PeriodicalIF":2.1,"publicationDate":"2025-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}