Electronic Materials Letters最新文献_第8页

Improved Performance of Transparent MoS2 Thin-Film Transistor with IZO Electrodes by Air Thermal Annealing 空气热退火改善IZO电极透明MoS2薄膜晶体管的性能

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-08-23 DOI: 10.1007/s13391-023-00450-3

Ju Won Kim, Jin Gi An, Guen Hyung Oh, Joo Hyung Park, TaeWan Kim

{"title":"Improved Performance of Transparent MoS2 Thin-Film Transistor with IZO Electrodes by Air Thermal Annealing","authors":"Ju Won Kim, Jin Gi An, Guen Hyung Oh, Joo Hyung Park, TaeWan Kim","doi":"10.1007/s13391-023-00450-3","DOIUrl":"10.1007/s13391-023-00450-3","url":null,"abstract":"<div><p>Molybdenum disulfide (MoS<sub>2</sub>) grown via metal-organic chemical vapor deposition is known to exhibit high transparency and superior quality. Transparent thin-film transistor (TFT) based on a multilayer MoS<sub>2</sub> film and indium zinc oxide (IZO) using a representative transparent conducting oxide as source and drain electrodes indicate more than 70% transmittance in the visible wavelength. However, the device performance is limited by the large Schottky barrier height corresponding to the high work function of IZO (~ 5.1 eV) and surface impurities generated during the wet transfer process and subsequent oxidation. In this study, we addressed this problem by employing air thermal annealing to improve the TFT device performance. Consequently, contact resistance is reduced ~ 10 times, and the field-effect mobility and on/off ratio measured using ion-gel side gate, which are important parameters for TFT device operation, were enhanced by ~ 59 and ~ 81 times, respectively.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"225 - 231"},"PeriodicalIF":2.1,"publicationDate":"2023-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47985145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Manipulation of Hole and Exciton Distributions in Organic Light-Emitting Diodes with Dual Emission Layers 双发射层有机发光二极管中空穴和激子分布的操纵

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-08-23 DOI: 10.1007/s13391-023-00452-1

Suk-Ho Song, Jae-In Yoo, Hyo-Bin Kim, Sung-Cheon Kang, Kanghoon Kim, Sung-Jae Park, Qun Yan, Jang-Kun Song

{"title":"Manipulation of Hole and Exciton Distributions in Organic Light-Emitting Diodes with Dual Emission Layers","authors":"Suk-Ho Song, Jae-In Yoo, Hyo-Bin Kim, Sung-Cheon Kang, Kanghoon Kim, Sung-Jae Park, Qun Yan, Jang-Kun Song","doi":"10.1007/s13391-023-00452-1","DOIUrl":"10.1007/s13391-023-00452-1","url":null,"abstract":"<div><p>The efficiency improvement of organic light-emitting diodes (OLEDs) is important but challenging. Here, we introduce a unique OLED with a hole modulation layer (HML) in the middle of its emission layer (EML). The external quantum efficiency and power efficiency can be improved by approximately 58% when an HML with optimized thickness is inserted. HML insertion can efficiently retard hole flow, thus improving (<i>i</i>) exciton distribution uniformity and (<i>ii</i>) local electron–hole charge balance. A systematic study of the individual contributions of two EMLs separated by the HML shows that the former factor dominantly works at low current densities (< 10 mA/cm<sup>2</sup>), whereas the latter factor functions over the entire current density range of the OLED. Therefore, the efficiency improvement is greatest at low current densities, which aligns with the typical operating range in display applications. The results provide a deeper understanding of the OLED emission mechanism, and the proposed OLED structure can significantly benefit high-performance OLED displays.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"232 - 242"},"PeriodicalIF":2.1,"publicationDate":"2023-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46451038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evolution of Microcracks in Epitaxial CeO2 Thin Films on YSZ-Buffered Si YSZ缓冲硅外延CeO2薄膜中微裂纹的演化

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-07-25 DOI: 10.1007/s13391-023-00449-w

Soo Young Jung, Hyung-Jin Choi, Jun Young Lee, Min-Seok Kim, Ruiguang Ning, Dong-Hun Han, Seong Keun Kim, Sung Ok Won, June Hyuk Lee, Ji-Soo Jang, Ho Won Jang, Seung-Hyub Baek

{"title":"Evolution of Microcracks in Epitaxial CeO2 Thin Films on YSZ-Buffered Si","authors":"Soo Young Jung, Hyung-Jin Choi, Jun Young Lee, Min-Seok Kim, Ruiguang Ning, Dong-Hun Han, Seong Keun Kim, Sung Ok Won, June Hyuk Lee, Ji-Soo Jang, Ho Won Jang, Seung-Hyub Baek","doi":"10.1007/s13391-023-00449-w","DOIUrl":"10.1007/s13391-023-00449-w","url":null,"abstract":"<div><p>Epitaxial buffer layers such as ceria (CeO<sub>2</sub>)/yttria-stabilized zirconia (YSZ) allow the direct integration of functional oxide single crystal thin films on silicon (Si). Microcracks in the buffer layer, often evolving from the large thermal tensile stress, are detrimental to the integration of high-quality complex oxide thin films on Si. In this study, we investigated the evolution of microcracks in sputter-grown epitaxial CeO<sub>2</sub> layers by systematically varying the sputtering power and thickness of CeO<sub>2</sub> thin films on YSZ single crystal (low thermal mismatch) and YSZ-buffered Si (high thermal mismatch) substrates. Using a plane stress model, we revealed that as the sputtering power increased, the epitaxial CeO<sub>2</sub> thin films tended to be more compressively strained at the growth temperature. This could accommodate the tensile strain arising during cooling to room temperature, thereby suppressing the evolution of microcracks. Our result provides not only a method to suppress microcracks in the oxide heterostructure on Si, but also a tool to control their strain state, by controlling their growth parameters.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"484 - 490"},"PeriodicalIF":2.1,"publicationDate":"2023-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47955455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A Dense, Pinholes-free Pure Cubic Phase CsPbBr3 Nanocrystals Film for High-performance Photodetector 用于高性能光电探测器的致密无针孔纯立方相CsPbBr3纳米晶体薄膜

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-30 DOI: 10.1007/s13391-023-00448-x

Thanh-Tung Duong, Phuong-Nam Tran, Tuan-Pham Van, Duy-Hung Nguyen, Van-Dang Tran

引用次数: 0

Optimization of Optical Modulation in Amorphous WO3 Thin Films 非晶WO3薄膜光调制的优化

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-29 DOI: 10.1007/s13391-023-00447-y

Jiangbin Su, Xiumei Zhu, Longlong Chen, Yu Liu, Hao Qi, Zuming He, Bin Tang

{"title":"Optimization of Optical Modulation in Amorphous WO3 Thin Films","authors":"Jiangbin Su, Xiumei Zhu, Longlong Chen, Yu Liu, Hao Qi, Zuming He, Bin Tang","doi":"10.1007/s13391-023-00447-y","DOIUrl":"10.1007/s13391-023-00447-y","url":null,"abstract":"<p>WO<sub>3</sub> thin films were prepared on indium-tin oxide (ITO) glass substrates at different substrate temperature by radio frequency magnetron sputtering. Then the films were soaked in five organic solvents of acetone, ethanol, cyclohexane, acetonitrile and ethyl acetate for 48 h, respectively. The changes in the microstructure, surface morphology and electrochromic (EC) properties of WO<sub>3</sub> thin films before and after the immersion treatment were systematically studied. It was found that after soaking in ethanol, the optical modulation of amorphous WO<sub>3</sub> thin films deposited at room temperature increased from 50 to 85%, showing excellent EC performance. Moreover, the immersion treatment in ethanol is also helpful for improving the EC properties of amorphous WO<sub>3</sub> thin films prepared at elevated substrate temperature. However, after immersion in the other organic solvents, the optical modulation of WO<sub>3</sub> thin films increased less (for acetone: 77%) or even decreased significantly (for cyclohexane, acetonitrile and ethyl acetate: 31%, 30% and 35%, respectively). In addition, the immersion treatment in ethanol cannot improve the optical modulation of crystalline WO<sub>3</sub> thin films prepared at 600 °C, which dropped from 58 to 40%. The authors believe that this is mainly related to the different dredging effects of various organic solvents on the transport channels of Li-ions and electrons in WO<sub>3</sub> thin films. Therefore, this work provides a new approach for the optimization of EC performance of amorphous WO<sub>3</sub> thin films.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"131 - 139"},"PeriodicalIF":2.1,"publicationDate":"2023-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47548237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on Silane Coupling Agent Treated Silica Nanoparticles Filled High Performance Copper Clad Laminate 硅烷偶联剂处理纳米二氧化硅填充高性能覆铜层压板的研究

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-29 DOI: 10.1007/s13391-023-00446-z

Seoyeon Yuk, Byoung Cheon Lee, Seulgi Kim, Woo Kyu Kang, Dongju Lee

{"title":"Study on Silane Coupling Agent Treated Silica Nanoparticles Filled High Performance Copper Clad Laminate","authors":"Seoyeon Yuk, Byoung Cheon Lee, Seulgi Kim, Woo Kyu Kang, Dongju Lee","doi":"10.1007/s13391-023-00446-z","DOIUrl":"10.1007/s13391-023-00446-z","url":null,"abstract":"<p>Efforts to improve the properties of composites have involved extensive studies regarding the effective incorporation of a polymer matrix and inorganic fillers. In this work, we generated a stable organosilica sol with high concentration and high purity by surface modification with silane coupling agents, then integrated it with an epoxy matrix. The silica nanoparticle/epoxy composite exhibited improved tensile strength because of the uniform distribution of silica in the matrix, as well as the interfacial chemical bonding between polymer and silica nanoparticles; these factors resulted in effective load transfer from matrix to fillers. Additionally, the application of copper-clad laminates (CCLs) with prepreg-containing silica nanoparticles led to substantial improvements in mechanical properties, including peel strength (0.46 kgf/cm) and storage modulus (30.0 GPa), compared with conventional CCLs lacking silica nanoparticles. These results suggest that prepregs containing surface-modified silica nanoparticles have great potential for use as printed circuit board substrate materials in high-performance electronics.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"207 - 216"},"PeriodicalIF":2.1,"publicationDate":"2023-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42986469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Contact and Interface Engineering of MoS2-Based Photodetectors Using Electron-Beam Irradiation 电子束辐照MoS2基光电探测器的接触与界面工程

IF 2.4 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-26 DOI: 10.1007/s13391-023-00445-0

Bong Ho Kim, Dong Wook Kim, Soon Hyeong Kwon, Hongji Yoon, Young Joon Yoon

{"title":"Contact and Interface Engineering of MoS2-Based Photodetectors Using Electron-Beam Irradiation","authors":"Bong Ho Kim, Dong Wook Kim, Soon Hyeong Kwon, Hongji Yoon, Young Joon Yoon","doi":"10.1007/s13391-023-00445-0","DOIUrl":"10.1007/s13391-023-00445-0","url":null,"abstract":"<p>The effect of electron-beam irradiation (EBI) on MoS<sub>2</sub>-based photodetectors with various electrode structures was investigated to improve the electrical and photoelectrical properties. The MoS<sub>2</sub> films were deposited at room temperature by RF magnetron sputtering and subsequently transformed into a two-dimensional layered structure by EBI treatment with the electron energy of 3 kV for 1 min. The electrical resistance and photoelectrical properties, such as photocurrent and photoresponsivity, of MoS<sub>2</sub> films were examined with patterned Au/Ti electrodes as a top contact (TC) and a bottom contact structure. In addition, the interfacial effect of high-k dielectric materials of thin HfO<sub>2</sub> film between MoS<sub>2</sub> and the SiO<sub>2</sub>/Si substrate was investigated to enhance the photoelectrical property. The MoS<sub>2</sub> photodetectors fabricated by the EBI before TC formation on HfO<sub>2</sub> exhibited the highest photoresponsivity of 11.88 mA/W, which was an increase of 6500% from the EBI before TC structure on SiO<sub>2</sub>. We believe that this work contributes to the improvement of contact and interface properties of MoS<sub>2</sub>-based photodetectors readily and quickly compared with conventional high-temperature thermal treatment.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"19 6","pages":"564 - 570"},"PeriodicalIF":2.4,"publicationDate":"2023-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41271892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fe/N-Doped Carbon Framework Derived from ZIF-8 on Graphene Oxide for Efficient Oxygen Reduction Reaction 氧化石墨烯上ZIF-8衍生的Fe/N掺杂碳框架用于有效的氧还原反应

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-20 DOI: 10.1007/s13391-023-00441-4

Yating Zhang, Pei He, Dongxian Zhuo, Jianlan Zhang, Nana Zhang, Xiaobo Wang, Gang Lin, Zhenghan Kong

{"title":"Fe/N-Doped Carbon Framework Derived from ZIF-8 on Graphene Oxide for Efficient Oxygen Reduction Reaction","authors":"Yating Zhang, Pei He, Dongxian Zhuo, Jianlan Zhang, Nana Zhang, Xiaobo Wang, Gang Lin, Zhenghan Kong","doi":"10.1007/s13391-023-00441-4","DOIUrl":"10.1007/s13391-023-00441-4","url":null,"abstract":"<div><p>Exploration of highly efficient non-noble metal oxygen reduction reaction (ORR) catalysts is essential for the widespread industrial utilization of fuel cells. Herein, we demonstrated a hierarchical porous catalyst (denoted as Fe-NC-Gs) using a simple stirring and one-step pyrolysis method. ZIF-8-derived N-doped carbon framework loaded on graphene oxide, on which Fe<sub>3</sub>O<sub>4</sub> and FeS nanoparticles are uniformly dispersed. In the composite nanostructure, a high surface area (470.58 m<sup>2</sup> g<sup>−1</sup>) and hierarchical porous structure were observed. The obtained Fe-NC-G-2 exhibits superior ORR properties. The half-wave potential (E<sub>1/2</sub>) and the limiting current density in alkaline media were up to 0.85 V and − 5.39 mA cm<sup>−2</sup>, respectively, comparable to the commercially available Pt/C. The four-electron-dominated process was exhibited in the ORR catalysis. It also manifests a better methanol tolerance and electrochemical stability during the chronoamperometry measurement in 0.1 M KOH. These results suggest that the proposed strategy provides a new pathway to construct efficient electrocatalysts for ORR.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"95 - 101"},"PeriodicalIF":2.1,"publicationDate":"2023-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41523603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vertical Pattern of Interconnects to Bypass High Strain Near a Hard Die on a Flexible Substrate Under Mechanical Bending 机械弯曲下柔性基板上靠近硬模的互连线绕过高应变的垂直模式

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-19 DOI: 10.1007/s13391-023-00444-1

Jong-Sung Lee, Young-Joo Lee, Jaegeun Seol, Young-Chang Joo, Byoung-Joon Kim

{"title":"Vertical Pattern of Interconnects to Bypass High Strain Near a Hard Die on a Flexible Substrate Under Mechanical Bending","authors":"Jong-Sung Lee, Young-Joo Lee, Jaegeun Seol, Young-Chang Joo, Byoung-Joon Kim","doi":"10.1007/s13391-023-00444-1","DOIUrl":"10.1007/s13391-023-00444-1","url":null,"abstract":"<div><p>The distinguishing feature of a flexible electronic device is that it maintains its function even when the shape changes repeatedly. As the degree of integration of flexible devices increases, revealing failure mechanisms and extending the lifetime of the flexible devices are getting more difficult. One of the potential damage zones is the interface of heterogeneous material components, where strain can be localized due to the mismatch of mechanical properties. In this study, we investigate the mechanically reliable interconnect design of the flexible printed circuit board (FPCB) system in which the packaging chip is integrated. When the FPCB was bent, folding occurred at the edge of the packaging chip due to the high bending rigidity compared with the plastic substrate and resulted in high strain concentration. By introducing interconnect architecture that bypassed the strain concentration area around the packaging chip, mechanical damage of the interconnects was successfully reduced. Through finite element simulation, the strain applied to the interconnect crossing the strain-concentrated region was predicted to be 2 times larger than that bypassing the strain-concentrated region, from 8.32 to 4.64%. In addition, the strain gap of these two interconnects could be increased as the Young’s modulus mismatch between the packaging chip and the substrate increased. This study is expected to improve the design guidelines to mechanically reliable interconnects in highly integrated flexible electronics.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 2","pages":"122 - 130"},"PeriodicalIF":2.1,"publicationDate":"2023-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49111675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Pt, Ag and Au Nanoparticles on Hollow Carbon Spheres as Cathode ORR 铂、银、金纳米颗粒在空心碳球上作为阴极ORR

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2023-06-19 DOI: 10.1007/s13391-023-00443-2

Yuhan Jiang, Linlin Guan, Yangjing Jiao, Chunxin Yu, Fang Zhao, Xiaowei Zhou, Zhu Liu

引用次数: 0