Yuexiao Liu, Chongyang Li, Peixin Chen, Jinyang Liu, Anmin Hu, Ming Li
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引用次数: 0
Abstract
Efficient diffusion barriers are necessary to prevent the formation of copper-tin intermetallic compounds (IMCs) in advanced packaging for Sn/Cu micro-bumps. This study investigated the interfacial properties of solder and Ni, Co-9W, Co-20W, Co-20Fe-10W, and Co-36Fe-17W barriers and determined the thickness of IMCs formed between Sn and these barriers after up to 15 reflows. Among the five barriers, Co-36Fe-17W proved to be the most effective in inhibiting the reaction of liquid Sn solder. At the Sn/Co-W interface, CoSn3 IMC was formed, while at the Sn/Co-Fe-W interface, CoSn3 IMC and FeSn2 IMC were observed. The contact angles of these layers were measured and found to be 18°, 22°, 25°, 29°, and 27°, respectively. The results showed that an increase in W content in Co-W led to an increase in the contact angle, while the intrinsic wettability of Co-Fe-W decreased with an increase in Fe content. The shear strengths of the five joints were 27 MPa, 31 MPa, 25 MPa, 25 MPa, and 26 MPa, respectively, with different fracture modes observed. The Co-Fe-W-Sn layer was partially peeling from the diffusion barriers in SAC305/Co-20Fe-10W, and the fracture surfaces exhibited an irregular and rough state, which was attributed to the increasing Fe and W contents. These findings offer valuable insights for enhancing the reliability of electronic packages.
期刊介绍:
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.