Haokun Li, Chongyang Li, Peixin Chen, Rui Xi, Feifei Li, Huiqin Ling, Ming Li
{"title":"新型镍/铜双层阻焊层和焊料界面反应中 Kirkendall 空洞的自愈合和 IMC 生长","authors":"Haokun Li, Chongyang Li, Peixin Chen, Rui Xi, Feifei Li, Huiqin Ling, Ming Li","doi":"10.1007/s13391-024-00492-1","DOIUrl":null,"url":null,"abstract":"<div><p>Single Ni layer is often inserted as diffusion barrier between Cu pillar and Sn-based solder to avoid excessive growth of brittle intermetallic compounds (IMCs) and consequent Kirkendall voids (KVs) in microbumps. However, with shrinking size of microbumps, Ni layer cannot maintain the inhibition performance as its thickness is reduced as well. In this work, Ni/Cu bi-layer barrier was employed at Cu-Sn interface, which was expected to reduce diffusion by rapidly generated Cu-Sn IMC retarding the diffusion of Ni. IMC growth behavior and interfacial reaction during isothermal aging were investigated. The self-healing phenomenon of KVs was detected during aging at 150 °C . It’s attributed to the transformation from Cu<sub>3</sub>Sn to Cu<sub>6</sub>Sn<sub>5</sub>. The novel barrier exhibited excellent inhibition property compared with single Ni layer with slower IMC growth rate and less Cu substrate diffusion. Moreover, during 170 °C aging test, the Ni/Cu bi-layer barrier showed no sign of depletion until 600 h, while the single Ni barrier was completely depleted after 144 h. Such excellent inhibition property is beneficial to the future application of ultra-thin barrier layer in microbumps.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 5","pages":"509 - 516"},"PeriodicalIF":2.1000,"publicationDate":"2024-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-Healing of Kirkendall Voids and IMC Growth in the Interfacial Reaction of Novel Ni/Cu bi-layer Barrier and Solder\",\"authors\":\"Haokun Li, Chongyang Li, Peixin Chen, Rui Xi, Feifei Li, Huiqin Ling, Ming Li\",\"doi\":\"10.1007/s13391-024-00492-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Single Ni layer is often inserted as diffusion barrier between Cu pillar and Sn-based solder to avoid excessive growth of brittle intermetallic compounds (IMCs) and consequent Kirkendall voids (KVs) in microbumps. However, with shrinking size of microbumps, Ni layer cannot maintain the inhibition performance as its thickness is reduced as well. In this work, Ni/Cu bi-layer barrier was employed at Cu-Sn interface, which was expected to reduce diffusion by rapidly generated Cu-Sn IMC retarding the diffusion of Ni. IMC growth behavior and interfacial reaction during isothermal aging were investigated. The self-healing phenomenon of KVs was detected during aging at 150 °C . It’s attributed to the transformation from Cu<sub>3</sub>Sn to Cu<sub>6</sub>Sn<sub>5</sub>. The novel barrier exhibited excellent inhibition property compared with single Ni layer with slower IMC growth rate and less Cu substrate diffusion. Moreover, during 170 °C aging test, the Ni/Cu bi-layer barrier showed no sign of depletion until 600 h, while the single Ni barrier was completely depleted after 144 h. Such excellent inhibition property is beneficial to the future application of ultra-thin barrier layer in microbumps.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":536,\"journal\":{\"name\":\"Electronic Materials Letters\",\"volume\":\"20 5\",\"pages\":\"509 - 516\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electronic Materials Letters\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s13391-024-00492-1\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronic Materials Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s13391-024-00492-1","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Self-Healing of Kirkendall Voids and IMC Growth in the Interfacial Reaction of Novel Ni/Cu bi-layer Barrier and Solder
Single Ni layer is often inserted as diffusion barrier between Cu pillar and Sn-based solder to avoid excessive growth of brittle intermetallic compounds (IMCs) and consequent Kirkendall voids (KVs) in microbumps. However, with shrinking size of microbumps, Ni layer cannot maintain the inhibition performance as its thickness is reduced as well. In this work, Ni/Cu bi-layer barrier was employed at Cu-Sn interface, which was expected to reduce diffusion by rapidly generated Cu-Sn IMC retarding the diffusion of Ni. IMC growth behavior and interfacial reaction during isothermal aging were investigated. The self-healing phenomenon of KVs was detected during aging at 150 °C . It’s attributed to the transformation from Cu3Sn to Cu6Sn5. The novel barrier exhibited excellent inhibition property compared with single Ni layer with slower IMC growth rate and less Cu substrate diffusion. Moreover, during 170 °C aging test, the Ni/Cu bi-layer barrier showed no sign of depletion until 600 h, while the single Ni barrier was completely depleted after 144 h. Such excellent inhibition property is beneficial to the future application of ultra-thin barrier layer in microbumps.
期刊介绍:
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.