Magnetite–Polyaniline Nanocomposite for Non-Volatile Memory and Neuromorphic Computing Applications

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2024-04-16 DOI:10.1007/s13391-024-00495-y

Ishika U. Shah, Snehal L. Patil, Sushilkumar A. Jadhav, Tukaram D. Dongale, Rajanish K. Kamat

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Abstract

Conducting polymers are proving to be useful for construction of resistive switching devices. This work reports the fabrication of a resistive switching device using Magnetite-Polyaniline (Fe₃O₄-PANI) nanocomposite. The device showed good non-volatile memory properties and can mimic neuromorphic synaptic behavior. Initially, Fe₃O₄ nanoparticles were synthesized using the co-precipitation method and PANI by oxidative polymerization and their nanocomposites of different compositions were prepared and fully characterized. The 10% Fe₃O₄-PANI-based RS device outperforms all others in terms of I–V switching performance. Furthermore, the optimized device (10% Fe₃O₄-PANI) has tuneable I–V characteristics. The device demonstrated excellent analog switching at ± 1.5 V and digital switching at ± 2.5 V. The memristive behavior of the Ag/10% Fe₃O₄-PANI/FTO device was confirmed by the pinched hysteresis loop in the I–V curves at different voltages, as well as the double-valued charged-flux characteristics. The device has good cycle-to-cycle reliability for switching voltages and switching currents, as demonstrated by the Weibull distribution and other statistical measures. Moreover, the device can retain memory states up to 6 × 10³ s and shows a switching stability of 2 × 10⁴ cycles. The device also showed linear potentiation and depression characteristics and mimicked excitatory post-synaptic current (EPSC) and paired-pulse facilitation (PPF) index properties similar to its biological counterpart. According to the charge transport model fitting results, the Ohmic and Child’s square laws dominated in both analog and digital switching processes, and RS occurs due to the filamentary process.

Graphical Abstract

Abstract Image

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用于非易失性存储器和神经形态计算应用的磁铁矿-多苯胺纳米复合材料

导电聚合物被证明可用于制造电阻开关器件。这项研究报告了利用磁铁矿-聚苯胺（Fe3O4-PANI）纳米复合材料制造的电阻开关器件。该器件显示出良好的非易失性记忆特性，并能模拟神经突触行为。首先，利用共沉淀法合成了 Fe3O4 纳米粒子，利用氧化聚合法合成了 PANI，并制备了不同成分的纳米复合材料，对其进行了全面表征。基于 10% Fe3O4-PANI 的 RS 器件在 I-V 开关性能方面优于其他所有器件。此外，优化后的器件（10% Fe3O4-PANI）具有可调的 I-V 特性。该器件在 ± 1.5 V 和 ± 2.5 V 下分别实现了出色的模拟开关和数字开关性能。Ag/10% Fe3O4-PANI/FTO 器件的忆阻行为通过不同电压下 I-V 曲线中的针状滞后环以及双值带电通量特性得到了证实。该器件在开关电压和开关电流方面具有良好的周期可靠性，这一点已通过 Weibull 分布和其他统计指标得到证实。此外，该器件可保持记忆状态长达 6 × 103 秒，开关稳定性达 2 × 104 个周期。该器件还显示出线性电位增强和抑制特性，并模仿了兴奋性突触后电流（EPSC）和配对脉冲促进（PPF）指数特性，与其生物对应物相似。根据电荷传输模型拟合结果，欧姆定律和蔡尔德平方定律在模拟和数字开关过程中都占主导地位，而 RS 是由于丝状过程而发生的。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.