Electronic Materials Letters最新文献

{"title":"Enhanced Light-Scattering Properties of Aqueous Chemical Bath Deposited ZnO Nanowires: Influence of Zinc Source Concentration","authors":"Vinaya Kumar Arepalli,&nbsp;Eunyeong Yang,&nbsp;Choong-Heui Chung","doi":"10.1007/s13391-025-00545-z","DOIUrl":"10.1007/s13391-025-00545-z","url":null,"abstract":"<div><p>This study investigates the light-diffusing capabilities of ZnO nanowires synthesized using the aqueous chemical bath deposition method on PET substrates. By systematically varying Zn source concentrations, the morphology and optical performance of ZnO nanowires were tuned. Scanning electron microscopy revealed that nanowires grown at optimal Zn sources (0.75 g and 1.2 g) exhibited sharp tip morphologies, while higher or lower Zn sources led to flatter tips due to isotropic growth or insufficient precursor availability. Optical characterization demonstrated that ZnO nanowires grown at 1.2 g of the Zn source achieved a maximum total transmittance of ~ 58% and a scattering angle of 53°, outperforming commercial optical diffusers. The transmission haze values peaked at 98.5% for nanowires grown at 1.2 g of the Zn source, attributed to the enhanced refractive index boundaries and optimized structural properties. These findings highlight the potential of ZnO nanowires as high-performance optical diffusers for advanced optoelectronic applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"177 - 183"},"PeriodicalIF":2.1,"publicationDate":"2025-01-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571119","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thickness-Dependent Electrical and Optoelectrical Properties of SnSe2 Field-Effect Transistors","authors":"Han-Woong Choi,&nbsp;Dong Hyun Seo,&nbsp;Ji Won Heo,&nbsp;Sang-Il Kim,&nbsp;TaeWan Kim","doi":"10.1007/s13391-025-00544-0","DOIUrl":"10.1007/s13391-025-00544-0","url":null,"abstract":"<div><p>Two-dimensional semiconductors such as SnSe₂ hold great promise for electronic and optoelectronic applications. Factors such as the intrinsic carrier concentration and interfacial scattering strongly influence device performance. In this study, SnSe₂-based field-effect transistors were fabricated with precise thickness control by reactive ion etching. Electrical measurements revealed that reducing the thickness from 300 to 21 nm led to an increase in carrier mobility from 3.76 to 26.6 cm² V^− 1 s^− 1 and an improvement in conductivity from 0.31 to 7.72 S/cm. This enhancement is attributed to a rise in carrier concentration, from 1.48 × 10¹⁸ to 1.66 × 10¹⁹ cm⁻³, along with better screening of interfacial Coulomb potential. Furthermore, the photoresponsivity varied with thickness, with thinner devices exhibiting a peak of 484 A/W under a 700-nm laser, compared to 260 A/W under a 900-nm laser for thicker devices. These findings highlight the critical role of thickness optimization in fine-tuning the electrical and optoelectronic properties of SnSe₂-based devices.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"154 - 161"},"PeriodicalIF":2.1,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase Transition and Thermoelectric Performance of NixCu12−xSb4Se13","authors":"Sang Jun Park,&nbsp;Il-Ho Kim","doi":"10.1007/s13391-024-00543-7","DOIUrl":"10.1007/s13391-024-00543-7","url":null,"abstract":"<div><p>Ternary compounds of the Cu–X–Q system (where X = Fe, Sb, Sn and Q = S, Se), such as Cu₅FeS₄, Cu₃SbS₄, and Cu₂SnSe₃, have garnered considerable attention for their potential applications in electronics, optics, and energy technologies. These compounds are noted for their low thermal conductivity and narrow band gaps, making them promising candidates for thermoelectric materials. However, detailed experimental investigations into the phase transitions and thermoelectric properties of synthetic hakite, particularly with Ni substitution, have been limited. This study focused on synthesizing Ni-substituted hakite (Ni_xCu_12−xSb₄Se₁₃; x = 0.5–2) through mechanical alloying and hot pressing techniques, while also exploring the phase transitions and thermoelectric characteristics as a function of Ni content. Despite the charge compensation effect of Ni, a pure hakite phase could not be achieved. Instead, the resultant phases comprised mixtures of secondary phases including bytizite, pribramite, and permingeatite, or their composites. This indicates that the introduction of Ni into the system did not promote the formation of a single-phase hakite but rather stabilized a multi-phase system. The introduction of Ni resulted in a decrease in electrical conductivity across all specimens. Notably, the materials exhibited non-degenerate semiconductor behavior. The measured Seebeck coefficients were significantly high and positive, confirming p-type behavior. However, these coefficients decreased with increasing temperature. The thermal conductivity of the materials displayed minimal temperature dependence, consistently remaining below 0.65 Wm⁻¹ K⁻¹. This low thermal conductivity is advantageous for thermoelectric efficiency, as it minimizes heat loss while maintaining charge transport. For the composition Ni_0.5Cu_11.5Sb₄Se₁₃, we achieved a maximum power factor of 0.09 mWm⁻¹ K⁻² and a peak dimensionless figure of merit (ZT) of 0.18 at 623 K.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"235 - 244"},"PeriodicalIF":2.1,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-Effective Methylene Blue Detection by Nanoporous Gold for Surface-Enhanced Raman Spectroscopy","authors":"Yoonseo Huh,&nbsp;Sangwoo Ryu","doi":"10.1007/s13391-024-00541-9","DOIUrl":"10.1007/s13391-024-00541-9","url":null,"abstract":"<div><p>This study presents the fabrication and optimization of nanoporous gold (Au) substrates for Surface-Enhanced Raman Spectroscopy (SERS). These substrates were obtained by the high-pressure thermal evaporation method, which utilizes a relatively high pressure of a few Torr to form highly porous structures. These nanoporous structures were induced by homogeneous nucleation and growth of the evaporated metal atoms that occurred through repeated collisions during the deposition process. By controlling deposition pressure and film thickness, optimal conditions to achieve enhanced SERS activity were established. The Au nanoporous structures consisted of randomly connected Au nanoparticles and demonstrated numerous nanogaps between these nanoparticles. These nanogaps act as hot spots of localized surface plasmon resonance, enabling significant amplification of Raman signals. The optimized nanoporous Au substrate, deposited at 2.0 Torr with a thickness of 1.65 μm, achieved a limit of detection (LOD) of 10^− 8 M for Rhodamine 6G (R6G). Furthermore, the substrate’s applicability was extended to the detection of methylene blue (MB), an organic dye with known environmental impacts. MB could be detected up to 10^− 6 M by using these nanoporous Au substrates for SERS. This work successfully demonstrated the potential of nanoporous Au for SERS as an effective analytical platform for trace-level detection of MB, paving the way for advancements in environmental monitoring and biological sensing applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><img></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"260 - 267"},"PeriodicalIF":2.1,"publicationDate":"2025-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143570931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Pribramite CuSbSe2: Solid-State Synthesis and Thermoelectric Properties","authors":"Min Ji Choi,&nbsp;Sang Jun Park,&nbsp;Il-Ho Kim","doi":"10.1007/s13391-024-00542-8","DOIUrl":"10.1007/s13391-024-00542-8","url":null,"abstract":"<div><p>Pribramite (CuSbSe₂) is gaining attention as a potential thermoelectric material due to its high thermopower and low thermal conductivity, although it remains relatively underexplored compared to more widely studied thermoelectric compounds. This study focused on optimizing the synthesis and sintering processes of CuSbSe₂ using mechanical alloying (MA) and hot pressing (HP) methods to enhance its thermoelectric performance. The desired pribramite phase was successfully synthesized in both mechanically alloyed powders and hot-pressed specimens, though secondary phases such as bytizite (Cu₃SbSe₃) and permingeatite (Cu₃SbSe₄) were identified. Thermogravimetric and differential scanning calorimetry analyses indicated a melting point for CuSbSe₂ between 723 and 728 K. Densely sintered samples achieved high relative densities of 98.6–99.4% through the MA–HP process. Electrical characterization revealed non-degenerate semiconductor behavior with temperature-dependent conductivity. Seebeck coefficient measurements confirmed p-type semiconductor characteristics, with holes as the major charge carriers. An intrinsic transition in the Seebeck coefficient was observed, with the transition temperature decreasing as the HP temperature increased. A maximum power factor of 0.23 mWm⁻¹ K⁻² was achieved at 623 K, while thermal conductivity steadily decreased across the measured temperature range of 323 K to 623 K. The highest dimensionless figure of merit (ZT) reached 0.28 at 623 K, indicating promising thermoelectric potential for CuSbSe₂.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"216 - 227"},"PeriodicalIF":2.1,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143570927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: Rapid Thermal Annealing Under O2 Ambient to Recover the Deterioration by Gamma-Ray Irradiation in a-IGZO TFTs","authors":"Minah Park,&nbsp;Jaewook Yoo,&nbsp;Hongseung Lee,&nbsp;Hyeonjun Song,&nbsp;Soyeon Kim,&nbsp;Seongbin Lim,&nbsp;Seohyeon Park,&nbsp;Jo Hak Jeong,&nbsp;Bongjoong Kim,&nbsp;Kiyoung Lee,&nbsp;Yoon Kyeung Lee,&nbsp;Keun Heo,&nbsp;Jiseok Kwon,&nbsp;Hagyoul Bae","doi":"10.1007/s13391-024-00536-6","DOIUrl":"10.1007/s13391-024-00536-6","url":null,"abstract":"","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"289 - 289"},"PeriodicalIF":2.1,"publicationDate":"2025-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143570924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Samarium-Doped Ceria Nanospheres Prepared via Solvothermal Method and the Chemical Mechanical Polishing Properties","authors":"Zhenyang Wang,&nbsp;Tongqing Wang,&nbsp;Xinchun Lu","doi":"10.1007/s13391-024-00537-5","DOIUrl":"10.1007/s13391-024-00537-5","url":null,"abstract":"<div><p>As a crucial abrasive in chemical mechanical polishing (CMP), ceria has garnered significant attention regarding its preparation method and surface modification methods. This research investigates the properties for samarium-doped ceria nanospheres prepared via the solvothermal method and their CMP performance on dielectric materials. Ceria nanospheres with various Sm doping concentrations were synthesized using a surfactant-assisted solvothermal method. Doping increased the ratio of Ce³⁺ to Ce⁴⁺ and oxygen vacancy in ceria. While, Sm doping reduced the overall amount of Ce, resulting in a decrease in the material removal rate (MRR) of silicon oxide, and an initial decrease followed by an increase in the MRR of silicon nitride. The Ce_0.95Sm_0.05O₂ suspension exhibited better material removal selectivity than pristine ceria nanospheres, with an increase in the selection ratio from 7:1 to 25:1.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"252 - 259"},"PeriodicalIF":2.1,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-Principles Study of CO, NH3, HCN, CNCl, and Cl2 Gas Adsorption Behaviors of Metal and Cyclic C–Metal B- and N-Site-Doped h-BNs","authors":"Jiaming Zhao,&nbsp;Mingcong Zhang,&nbsp;Chunyang Wang,&nbsp;Weiyao Yu,&nbsp;Yongliang Zhu,&nbsp;Pengcheng Zhu","doi":"10.1007/s13391-024-00540-w","DOIUrl":"10.1007/s13391-024-00540-w","url":null,"abstract":"<div><p>Effective detection of toxic gases such as carbon monoxide (CO), ammonia (NH₃), hydrogen cyanide (HCN), cyanogen chloride (CNCl), and chlorine (Cl₂) is highly important. Herein, the potential applications of metal and cyclic carbon (C)–metal doping at the boron (B) and nitrogen (N) sites of hexagonal boron nitride (h-BN) as CO, NH₃, HCN, CNCl, and Cl₂ gas detection materials, and the performance characteristics of those systems, were investigated based on first principles. The calculated parameters for systems containing each gas along with different metal and cyclic C–metal B- and N-site-doped h-BN substrates include adsorption energy, energy band structure, charge transfer, density of states, differential charge density, and recovery time. Among the systems studied, h-BN@B-zinc (Zn)/CO, h-BN@B-Zn/HCN, h-BN@B-Zn/CNCl, h-BN@B-Zn/Cl₂, and h-BN@B-3C-tin(Sn)/Cl₂ were characterized by strong adsorption, high electrosensitivity, and strong orbital hybridization, and were unaffected by N₂ and O₂ in the air environment. In addition, the desorption performance of these systems could be improved by varying degrees by modulating the adsorption energy using an applied electric field, which further facilitated thermoelectrolytic adsorption. These results imply that metal and cyclic C–metal B- and N-site-doped h-BN can be used to realize gas-sensing devices with good gas-sensing and adsorption properties.</p><h3>Graphical Abstract</h3><p>The doping of N-site of h-BN can significantly increase the conductivity. h-BN@B-Zn can effectively detect CO, HCN, CNCl and Cl₂, h-BN@B-3C-Sn can effectively detect Cl₂.h-BN@B-Zn and h-BN@B-3C-Sn. The substrate is not affected by air during detection. CO, HCN and CNCl can be desorbed effectively at h-BN@B-Zn at temperatures up to 334 K. Electric field can improve the desorption effect and further achieve thermoelectric desorption.</p>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"268 - 288"},"PeriodicalIF":2.1,"publicationDate":"2024-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143570968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of Crystallography and Charge Transfer Dynamics of CeO2–ZnO Nanocomposites Prepared via Facial Thermal Decomposition","authors":"Samor Boonphan,&nbsp;Suriyong Prachakiew,&nbsp;Anurak Prasatkhetragarn,&nbsp;Arrak Klinbumrung","doi":"10.1007/s13391-024-00539-3","DOIUrl":"10.1007/s13391-024-00539-3","url":null,"abstract":"<div><p>The ZnO and CeO₂ nanostructures were prepared via a thermal decomposition process. The CeO₂–ZnO nanocomposites with various CeO₂ quantities of 0–5 mol% characterized the structure, morphology, and optical characteristics using XRD, FT–IR, SEM, UV–Vis spectroscopy, and PL techniques. The phase fraction, lattice constants, and defects were determined by the calculation from the XRD result. The 5 mol% CeO₂–added ZnO sample exhibits the highest polar surface. SEM analysis revealed the presence of ZnO nanorods and CeO₂ nanoparticles. The composites principally featured ZnO with the spontaneous incorporation of CeO₂ nanoparticles. The bandgap was modified as CeO₂ content, showing 3.37 eV for ZnO and 3.31 eV for 5 mol% CeO₂ incorporation. Photoluminescence (PL) analysis demonstrated the Zn, Ce, and O defects and transformation of zinc interstitial (Zn_i) to Zn regular site (Zn_Zn). The photocatalytic degradation of Methylene Blue (MB) under visible light irradiation exhibited a superior efficiency than the single catalyst, determining the influence of charge transfer between the composite interfaces in combination with the sublevel energy of both Ce³⁺ and oxygen vacancy (V_o) being the center of electron trapping. This research points out the characteristics and the performance of thermal decomposition–processed CeO₂–ZnO composites in the photo-induced technology. The charge transfers were discussed, associating with the structural constants, emissive spectra, and sublevel energy.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"162 - 176"},"PeriodicalIF":2.1,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Amorphous Ni-Fe-Si-B-O Nanosheets for Efficient Electrocatalytic Oxygen Evolution Reaction","authors":"Jing Zhang,&nbsp;Junjie Dong,&nbsp;Zhaolong Li,&nbsp;Jin Zhang,&nbsp;Zhiyuan Ma","doi":"10.1007/s13391-024-00538-4","DOIUrl":"10.1007/s13391-024-00538-4","url":null,"abstract":"<div><p>Transition metal silicate hydroxides (NFSO) have shown to be stable catalysts for electrocatalytic oxygen evolution reaction (OER) in alkaline environments. However, their catalytic activity is not satisfactory. In this work, we report the high OER performance of amorphous Ni-Fe-Si-B-O (NFSO-B_<i>x</i>) nanosheets catalyst synthesized by a simple coprecipitation method. Compared to traditional NFSO, the incorporation of B changes the electronic structure of NFSO and significantly enhances its activity. The optimum sample NFSO-B₁ exhibits an overpotential of 255 mV at 10 mA cm^− 2, which is 69 mV lower than that of undoped NFSO, and it is durable against 24 h of chronopotentiometry test and 1000 CV cycles. More importantly, the NFSO-B₁ catalyst outperforms NiFe-LDH and the benchmark commercial RuO₂ catalysts in OER activity, demonstrating great potential for commercial application.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"228 - 234"},"PeriodicalIF":2.1,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143570986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}