Electronic Materials Letters最新文献

{"title":"Phase Formation Behavior and Thermoelectric Transport Properties of Solid Solution Composition Between SnTe and InTe","authors":"BeomSoo Kim,&nbsp;TaeWan Kim,&nbsp;Seungchan Seon,&nbsp;Okmin Park,&nbsp;Hyungyu Cho,&nbsp;Weon Ho Shin,&nbsp;Sang-il Kim","doi":"10.1007/s13391-024-00529-5","DOIUrl":"10.1007/s13391-024-00529-5","url":null,"abstract":"<div><p>Alloys based on SnTe have been widely studied for their eco-friendly characteristics and good electrical performance in the high-temperature range above 600 K. In this study, SnTe-InTe solid solution alloy compositions of Sn_1 − xIn_xTe (<i>x</i> = 0, 0.2, 0.4, 0.6, 0.8, and 1.0) were investigated for their phase formation behavior and thermoelectric properties. A single cubic SnTe phase was formed in <i>x</i> ≤ 0.4 samples, while <i>x</i> = 0.6 and 0.8 samples formed multi-phase with a tetragonal InTe phase. The carrier mobility gradually decreased with increasing <i>x</i> in the single cubic phase region (<i>x</i> = 0-0.4), and a drastic reduction of 58% for <i>x</i> = 0.2 and 82% for <i>x</i> = 0.4, causing <i>S</i> and <i>σ</i> to decrease simultaneously compared to that of the pristine SnTe. Thus, the power factor gradually reduced to 0.06 mW/mK² for <i>x</i> = 0.4 compared to 1.57 mW/mK² for the pristine sample, as confirmed by the weighted mobility reduction behavior. The lattice thermal conductivity showed a gradual decrease in the simple cubic phase region, owing to the additional point defects formed by In substitution of Sn sites. Consequently, <i>zT</i> gradually decreased from 0.31 for the pristine to 0.02 for <i>x</i> = 0.4 sample due to the degradation of carrier transport properties, specifically Hall mobility, outweighing the total thermal conductivity reduction. The maximum <i>zT</i> value of 0.50 at 750 K was observed for InTe (<i>x</i> = 1.0). Additional analysis using the single-parabolic-band model indicated that <i>zT</i> enhancement through carrier concentration optimization was not feasible for the alloy samples.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 2","pages":"207 - 215"},"PeriodicalIF":2.1,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Phase-Separated 2D PbBiI5 Halide Memristor for Neuromorphic Computing","authors":"Hee Joon Jung","doi":"10.1007/s13391-024-00528-6","DOIUrl":"10.1007/s13391-024-00528-6","url":null,"abstract":"<div><p>Here, we report on the two-dimensional (2D) (PbI₂)_0.5(BiI₃)_0.5 mixed halide memristor, which exhibits nonlinear conductance that surpasses the properties of the simple combination of PbI₂ and BiI₃ binaries. This 2D system is phase-separated into Bi-rich and Bi-poor nanoscale domains rather than forming a single homogeneous phase. Phase boundaries, predominantly featuring iodine vacancies or stacking faults, induce a novel memristive behavior along the c-axis, driven by ion transport perpendicular to the layered structure, making it promising for resistive switching memory (RRAM) applications. In-situ biasing transmission electron microscopy (TEM) reveals the formation of iodine filaments under sweep bias, with ion migration occurring mainly through phase boundaries in the out-of-plane direction. Direct observation of reversible filament formation in this phase-separated iodide system provides new insights into defect-mediated ion migration, resulting in nonlinear resistive switching, with potential applications in neuromorphic computing. The ability to track heavy anions like iodine in the halide memristor provides valuable insights into the similar correlation mechanisms between ion migration and defects in oxide or sulfide-based memristors. This capability could shed light on how defects influence ion transport in a broader range of materials, enhancing the development of resistive switching devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"32 - 40"},"PeriodicalIF":2.1,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced Thermoelectric Properties of FeSe2 Alloys by Lattice Thermal Conductivity Reduction by Cl Doping","authors":"BeomSoo Kim,&nbsp;Hyungyu Cho,&nbsp;Okmin Park,&nbsp;Seungchan Seon,&nbsp;Sang-il Kim","doi":"10.1007/s13391-024-00527-7","DOIUrl":"10.1007/s13391-024-00527-7","url":null,"abstract":"<div><p>Metal chalcogenides are widely studied as thermoelectric materials due to their finely tunable electronic transport properties over a wide temperature range. FeSe₂ has recently been considered a promising thermoelectric material with investigations focusing on restraining bipolar behavior through doping. In this study, a series of Cl-doped FeSe₂ compositions, a series of FeSe_2 − xCl_x (<i>x</i> = 0, 0.01, 0.025, and 0.05) compositions, were synthesized to investigate the influence of Cl doping. While the gradually decreasing lattice parameters with doping content <i>x</i> suggests successful doping up to <i>x</i> = 0.05, the hole concentration slightly decreased owing to electrons generated by the Cl doping. Nevertheless, the electrical conductivity and Seebeck coefficient show no systematic change with <i>x</i> owing to very low electron generating efficiency, and no distinctive enhancement of power factor is seen for the doped samples. On the other hand, the lattice thermal conductivity gradually and significantly decreased with <i>x</i> from 9.2 W/mK to 6.3 W/mK for <i>x</i> = 0.05 by 32% at 300 K, which is originated from the effective additional phonon scattering due to the difference in mass (55%) and size (9%) between Se²⁻ and Cl⁻ ions. Consequently, a thermoelectric figure of merit is increased to 0.073 from 0.057 at 600 K for <i>x</i> = 0.05.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"79 - 86"},"PeriodicalIF":2.1,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rapid Thermal Annealing under O2 Ambient to Recover the Deterioration by Gamma-Ray Irradiation in a-IGZO TFTs","authors":"Minah Park,&nbsp;Jaewook Yoo,&nbsp;Hongseung Lee,&nbsp;Hyeonjun Song,&nbsp;Soyeon Kim,&nbsp;Seongbin Lim,&nbsp;Seohyeon Park,&nbsp;Jo Hak Jeong,&nbsp;Bongjoong Kim,&nbsp;Kiyoung Lee,&nbsp;Yoon Kyeung Lee,&nbsp;Keun Heo,&nbsp;Jiseok Kwon,&nbsp;Hagyoul Bae","doi":"10.1007/s13391-024-00526-8","DOIUrl":"10.1007/s13391-024-00526-8","url":null,"abstract":"<div><p>Amorphous indium-gallium-zinc-oxide (a-IGZO) has been attracting great attention as a channel material for dynamic random access memory (DRAM) cell transistors due to its superior characteristics including low leakage current, large area deposition, and back-end-of-line (BEOL) compatibility. It should be clearly taken into account that DRAM will also be used in harsh environments such as military surveillance, aerospace, and nuclear power plants. Especially, these situations can cause inevitable and persistent degradation in long-term operations. When the a-IGZO thin film transistors (TFTs) were irradiated by gamma-ray with total doses of 500 Gy, threshold voltage (<i>V</i>_T) was negatively shifted and hysteresis (delta of <i>V</i>_T between forward and backward sweeps) was increased by creating a positive charge in gate insulator. The extracted density-of-states (DOS) and fitted model were employed to investigate the behavior of oxygen vacancy (<i>V</i>_O) in a-IGZO thin film. Electrical performance degraded by gamma-ray irradiation such as changes in <i>V</i>_T, border trap, tail acceptor-like states (<i>g</i>_TA(<i>E</i>)), and shallow donor-like states (<i>g</i>_SD(<i>E</i>)) were recovered through rapid thermal annealing (RTA) under the O₂ ambient.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"111 - 118"},"PeriodicalIF":2.1,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of Core/Shell WO3/WS2 Heterostructure Nanowires with Negative Photo-Responsiveness","authors":"Yu-Jin Song,&nbsp;Changhyeon Yoo,&nbsp;Camellia Schwartzman,&nbsp;Han-Kyun Shin,&nbsp;Hyoung J. Cho,&nbsp;Yeonwoong Jung,&nbsp;Jung Han Kim","doi":"10.1007/s13391-024-00524-w","DOIUrl":"10.1007/s13391-024-00524-w","url":null,"abstract":"<div><p>WO₃/WS₂ core/shell nanowires were synthesized using a scalable fabrication method by combining wet chemical etching and chemical vapor deposition (CVD). Initially, WO₃ nanowires were formed through wet chemical etching using a potassium hydroxide (KOH) solution, followed by oxidation at 650 °C. These WO₃ nanowires were then sulfurized at 900 °C to form a WS₂ shell, resulting in WO₃/WS₂ core/shell nanowires with diameters ranging from 90 to 370 nm. The synthesized nanowires were characterized using scanning electron microscopy (SEM), Raman, energy-dispersive X-ray spectroscopy (EDS), X-ray diffractometry (XRD), and transmission electron microscopy (TEM). The shell is composed of 2D WS₂ layers with uniformly spaced 2D layers as well as the atomically sharp core/shell interface of WO₃/WS₂. Notably, the WO₃/WS₂ heterostructure nanowires exhibited a unique negative photoresponse under visible light (405 nm) illumination. This negative photoresponse highlights the importance of interface engineering in these heterostructures and demonstrates the potential of WO₃/WS₂ core/shell nanowires for applications in photodetectors and other optoelectronic devices.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"87 - 93"},"PeriodicalIF":2.1,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparison of Diffusion Barrier Properties of Ni–Fe and Ni–Fe–W Layer at the Cu/Sn Interface","authors":"Jinyang Liu,&nbsp;Chongyang Li,&nbsp;Yuexiao Liu,&nbsp;Anmin Hu,&nbsp;Ming Li","doi":"10.1007/s13391-024-00525-9","DOIUrl":"10.1007/s13391-024-00525-9","url":null,"abstract":"<div><p>Bump is a pivotal technology in 3D IC. However, with the reduction in bump size, there is an urgent need for a high-performance barrier layer material to retard the growth of intermetallic compounds (IMCs) at the interface. The study investigated the diffusion barrier properties and mechanical properties of electrodeposited Ni, Ni–15Fe, Ni–44Fe, Ni–42Fe–16W, and Ni–41Fe–28W. Ni–41Fe–28W demonstrated superior barrier properties, with a thickness of 0.42 μm after aging at 150 °C for 720 h. During the early stages of aging, FeSn₂ were formed at the interface, followed by the later generation of blocky Ni₃Sn₄. With a rise in Fe content, the nucleation of Ni₃Sn₄ was suppressed and the wettability and shear strength of the interface were also enhanced. As for Cu/Ni–Fe–W/Sn, a thin layer of FeSn₂ was also formed, and a whitish Ni–Fe–W–Sn layer was developed at the interface. After aging for 720 h, no significant Ni–Sn IMCs were observed. As W content increased, FeSn₂ converted from layered type to island type. The introduction of W significantly inhibited the diffusion of IMCs nucleation at the interface, endowing Ni–Fe–W with excellent barrier properties. Although W reduced the interface wettability, it enhanced shear strength at lower concentrations, with SAC305/Ni–42Fe–16W achieving the highest strength of 34.8 MPa. While as W content increased, the fracture mode shifted from ductile fracture within the solder to mixed ductile–brittle fracture, leading to decrease in interface reliability. This study provided valuable insights for the design of high-performance barrier layers in advanced packaging.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"22 - 31"},"PeriodicalIF":2.1,"publicationDate":"2024-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermoelectric Characteristics of Bulk Cr2Te3 with Low Lattice Thermal Conductivity","authors":"Donghyun Shin,&nbsp;Hyunji Kim,&nbsp;Joseph Ngugi Kahiu,&nbsp;Samuel Kimani Kihoi,&nbsp;Ho Seong Lee","doi":"10.1007/s13391-024-00523-x","DOIUrl":"10.1007/s13391-024-00523-x","url":null,"abstract":"<div><p>In this study, we aimed to synthesize bulk Cr₂Te₃ and evaluate its thermoelectric properties. Previously, Cr₂Te₃ with a layered structure has primarily been synthesized in thin film form for studies that focused on its magnetic properties. The intrinsic layered structure of Cr₂Te₃ can contributes to its low lattice thermal conductivity. Our experimental results confirmed the successful synthesis of a homogeneous single-phase specimen and revealed a significantly low lattice thermal conductivity of 0.31 W/mK at 673 K. Additionally, we explored the substitution of titanium and germanium at chromium sites as a method to enhance thermoelectric performance, achieving a notable increase in the power factor.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"70 - 78"},"PeriodicalIF":2.1,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multi-Functional Molybdenum Oxide Doping to Improve the Electrical Characteristics of Indium Oxide Thin Film Transistors","authors":"Kwan-Jun Heo,&nbsp;Jae-Yun Lee,&nbsp;Gergely Tarsoly,&nbsp;Sung-Jin Kim","doi":"10.1007/s13391-024-00522-y","DOIUrl":"10.1007/s13391-024-00522-y","url":null,"abstract":"<div><p>This study investigates the utilization of MoO₃ precursors to enhance the electrical properties and stability of In₂O₃ TFTs based on eco-friendly aqueous solutions. Specifically, MoO₃ doped In₂O₃ (Mo-In₂O₃) TFTs were examined in this research. The Mo cation, hydroxide anion, and oxide radical of the MoO₃ precursor provide free electrons to the In₂O₃ thin film, reducing the trap site between the semiconductor interface, the semiconductor and the insulator, and improving the stability of the device by adjusting the oxygen vacancy. To verify the change in the electrical properties of In₂O₃ TFT due to MoO₃ doping, measurements of electron mobility after 30 days confirmed that In₂O₃ TFT electron mobility decreased by more than 80%, whereas Mo-In₂O₃ TFT electron mobility remained stable. PBS and NBS reliability evaluations confirmed that the Vth change of Mo- In₂O₃ TFT was less than that of In₂O₃ TFT. (In₂O₃ TFT PBS: 5.55 V, NBS: 0.33 V, Mo-In₂O₃ TFT PBS: 4.04 V, NBS: 0.10 V). In order to confirm the interface change of In₂O₃ film according to MoO₃ Doping, the difference in surface roughness was measured using an AFM and found to be within 4%. In addition, the doping effect of the active layer was verified through changes in oxygen species in XPS analysis. To demonstrate its application as an active electronic device, a Mo-In₂O₃ TFT based resistance load inverter was evaluated, and the voltage transfer curve and excellent inversion characteristics of the inverter were confirmed under various <i>V</i>_<i>DD</i> conditions.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div><div><p>Kwan-Jun Heo et al., multi-functional molybdenum oxide doping to improve the electrical characteristics of indium oxide thin film transistors</p></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"9 - 21"},"PeriodicalIF":2.1,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of Crystal Domain on Electrical Performance and Bending Durability of Flexible Organic Thin-Film Transistors with diF-TES-ADT Semiconductor","authors":"Dongwook Kim,&nbsp;Joel Ndikumana,&nbsp;Hyeonju Lee,&nbsp;Seullee Lee,&nbsp;Youngjun Yun,&nbsp;Jaehoon Park","doi":"10.1007/s13391-024-00519-7","DOIUrl":"10.1007/s13391-024-00519-7","url":null,"abstract":"<div><p>In this study, we examined the impact of crystal domain on the electrical performance and durability of flexible organic thin-film transistors (OTFTs). To analyze this, we fabricated the OTFTs on a polyimide substrate using 2,8-difluoro-5,11bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT) as the organic semiconductor. To examine the influence of the film morphology and crystallinity on the electrical characteristics of OTFTs, we dissolved diF-TES-ADT in chlorobenzene and toluene solvent, annealed it at different temperatures, and then evaluated its electrical performances. The optimum annealing temperature of the diF-TES-ADT OTFTs was determined through the comprehensive analysis of the electrical parameters. The film morphology and crystallinity of organic semiconductor as a function of temperature were examined using the technical measurement analysis such as the atomic force measurement, X-ray diffraction and polarized optic microscopy. Furthermore, we demonstrated the electrical degradation of the device under prolonged bending cycles and observed the effect of bending stress on the electrical performance of OTFTs. The size of the crystalline domain and surface morphology indicated a slower deterioration of OTFT performance with an increase in the number of bending cycles. It was approved that the crystal grain size and morphology of organic semiconductor may not be critical factors determining the electrical performance of OTFTs, however, the electrical durability against bending stress was significantly degraded by these factors. We speculate that the smaller grain sizes and directionally-grown crystalline structure are highly vulnerable to bending stress, resulting in increased occurrence of void cracks and structural defects.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 1","pages":"1 - 8"},"PeriodicalIF":2.1,"publicationDate":"2024-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142264597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All-Cobalt-Free Layered/Olivine Mixed Cathode Material for High-Electrode Density and Enhanced Cycle-Life Performance","authors":"Chang-Su Kim,&nbsp;Kookhan Kim,&nbsp;An-Seop Im,&nbsp;Sung-Su Kim,&nbsp;Jongmin Kim,&nbsp;Ji-Yong Eom","doi":"10.1007/s13391-024-00521-z","DOIUrl":"10.1007/s13391-024-00521-z","url":null,"abstract":"<div><p>In this study, a high-energy-density electrode was fabricated by combining cobalt-free layered oxide (NM) with olivine LiFePO₄ (LFP) nanoparticles. The resulting mixed all-cobalt-free cathode electrode effectively minimized electrode porosity by filling the interstitial spaces between the micron-sized layered-oxide particles with nanoscale LFP particles, significantly improving electrode density, and exhibiting excellent electrode conductivity. Furthermore, the composite electrode composed of NM and LFP achieved a volumetric capacity exceeding 600 mAh/cm^− 3, comparable to that of typical layered oxide cathode materials, while also demonstrating enhanced cycle-life performance relative to electrodes composed solely of layered oxide or LFP. The enhanced electrochemical performance is attributed to the efficient lithium-ion and electron conduction facilitated by the intimate contact between NM and LFP particles, the suppression of NM particle degradation due to the relatively stable LFP particles on the NM surface, and the reduced particle fracture during roll-pressing. These improvements have been confirmed through electrochemical analyses and electrode observations.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 6","pages":"799 - 806"},"PeriodicalIF":2.1,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142190110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}