Electronic Materials Letters最新文献_第3页

Integration of Ferroelectric and 2D Materials for Next-Generation High-performance Electronics 用于下一代高性能电子器件的铁电和二维材料的集成

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2026-01-04 DOI: 10.1007/s13391-025-00624-1

Jun Hoe Heo, Ji Min Park, Ho Won Jang

{"title":"Integration of Ferroelectric and 2D Materials for Next-Generation High-performance Electronics","authors":"Jun Hoe Heo, Ji Min Park, Ho Won Jang","doi":"10.1007/s13391-025-00624-1","DOIUrl":"10.1007/s13391-025-00624-1","url":null,"abstract":"<div><p>The spontaneous polarization of ferroelectric materials enables nonvolatile behavior and the possibility of low-power logic operation through the negative capacitance effect, making ferroelectric field-effect transistors (FeFETs) attractive candidates for next-generation memory and logic applications. However, Si-based FeFETs suffer from significant limitations such as large hysteresis, short retention, limited endurance, primarily due to interfacial trap states and insufficient carrier density for polarization compensation. The adoption of two-dimensional (2D) semiconductors effectively addresses these issues by offering atomically clean interfaces, enhanced electrostatic control, and improved charge balance. As a result, the integration of ferroelectric materials with 2D materials has emerged as a promising strategy for realizing high-performance electronics. This review highlights recent advances in ferroelectric/2D heterostructures, focusing on two-terminal devices such as ferroelectric capacitors (FeCAPs) and ferroelectric tunnel junctions (FTJs), as well as three-terminal FeFETs. These device architectures are examined in terms of their applicability to nonvolatile memory and negative capacitance field-effect transistors (NC-FETs), with key device characteristics such as memory window, retention, low-power switching, and endurance discussed with material combinations and interface designs. The review aims to guide the development of scalable, reliable, and multifunctional ferroelectric devices through 2D integration.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"221 - 237"},"PeriodicalIF":2.6,"publicationDate":"2026-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Massive Synthesis in Vacuum of High Thermal Conductivity Boron Arsenide for Underfill Application 真空大规模合成高导热砷化硼的下填体应用

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2026-01-03 DOI: 10.1007/s13391-025-00625-0

Bona Lee, Sangwoo Ryu

{"title":"Massive Synthesis in Vacuum of High Thermal Conductivity Boron Arsenide for Underfill Application","authors":"Bona Lee, Sangwoo Ryu","doi":"10.1007/s13391-025-00625-0","DOIUrl":"10.1007/s13391-025-00625-0","url":null,"abstract":"<div><p>The continuous miniaturization and increased integration density of semiconductor devices have intensified the demand for high thermal conductivity materials capable of efficiently dissipating heat generated within chips. Boron arsenide (BAs), predicted to exhibit an exceptionally high theoretical thermal conductivity of approximately 1000 W/m·K, has emerged as a promising next-generation thermal management material. However, studies on the synthesis of high-purity BAs powders and their applicability remain limited. In this work, BAs powder was synthesized via a solid-state reaction in vacuum, and the effects of annealing temperature and precursor molar ratio on phase formation and chemical composition were systematically investigated. Structural and compositional analysis revealed that annealing at 800 °C for 12 h with 2.02 mmol boron and 5.05 mmol arsenic yielded spherical, single-phase BAs with minimized B<sub>12</sub>As<sub>2</sub> impurities and residual boron, representing the composition closest to the ideal 1:1 stoichiometry. Using the synthesized powder, BAs ceramics were fabricated via spark plasma sintering. Thermally stable ceramic discs without cracks were successfully obtained at 700 °C and 30 MPa, exhibiting a relatively low thermal conductivity of approximately 3.0 W/m·K at room temperature. When the synthesized powder was incorporated into epoxy for underfill applications, BAs/epoxy composites showed processable viscosities of 13–43 Pa·s, while their thermal conductivity increased from 0.250 to 0.416 W/m·K with increasing BAs filler content.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"157 - 165"},"PeriodicalIF":2.6,"publicationDate":"2026-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147336567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene Emitters Suspended on Hollow Silica Nanospheres in an InGaAs Photovoltaic 在InGaAs光伏中悬浮于空心二氧化硅纳米球上的石墨烯发射器

IF 3.1 4区材料科学

Electronic Materials Letters Pub Date : 2025-12-23 DOI: 10.1007/s13391-025-00620-5

Yunsu Jang, Jaehyuk Heo, Young Ho Chu, Yongmin Baek, Chaeyoun Kim, Byungha Shin, Yun Seog Lee, Hyun S. Kum

{"title":"Graphene Emitters Suspended on Hollow Silica Nanospheres in an InGaAs Photovoltaic","authors":"Yunsu Jang, Jaehyuk Heo, Young Ho Chu, Yongmin Baek, Chaeyoun Kim, Byungha Shin, Yun Seog Lee, Hyun S. Kum","doi":"10.1007/s13391-025-00620-5","DOIUrl":"10.1007/s13391-025-00620-5","url":null,"abstract":"<div><p>Near-field thermophotovoltaic (NF-TPV) systems utilize nanoscale emitter–cell separations to exploit evanescent-mode coupling, achieving radiative heat transfer beyond the black-body limit (Bhatt et al. in Nat Commun 11:2545, 2020). Using plasmonic materials as emitters excites surface plasmon polaritons that enhance photon transmission and device efficiency (Koppens et al. in Nano Lett 11:3370–3377, 2011; Messina et al. in Phys Rev B Condens Matter Mater Phys 88:104307, 2013). However, graphene-based NF-TPV devices have remained theoretical due to the challenge of maintaining nanoscale gaps between the suspended emitter and the cell (Fiorino et al. in Nat Nanotechnol, 2018, https://doi.org/10.1038/s41565-018-0172-5). Even for other plasmonic materials that have succeeded in experimental realizations have been limited to specialized setups requiring additional equipment (e.g., piezo actuators) to maintain the nanoscale emitter–cell gap (Fiorino et al. in Nat Nanotechnol, 2018, https://doi.org/10.1038/s41565-018-0172-5; Song et al. in Nat Nanotechnol 10:253–258, 2015). Here, we experimentally demonstrate a graphene-assisted TPV device in which graphene is suspended aboveby a nano-gap. This gap is formed using a silica-nanosphere monolayer (<i>n</i> ≈ 1.1) as an interlayer, allowing integration of emitter and cell without external mechanical alignment.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 4","pages":"363 - 370"},"PeriodicalIF":3.1,"publicationDate":"2025-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148281846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photocatalytic WO3/Amorphous Carbon Dots Composite Coatings Immobilized by Ultrasonic Spray on Glass Substrate 超声喷涂固定玻璃基板光催化WO3/非晶碳点复合涂层

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-12-17 DOI: 10.1007/s13391-025-00616-1

V. Raja Preethi, Sagarika Sahoo, Ryun Kyung Lee, Kee-Sun Lee

{"title":"Photocatalytic WO3/Amorphous Carbon Dots Composite Coatings Immobilized by Ultrasonic Spray on Glass Substrate","authors":"V. Raja Preethi, Sagarika Sahoo, Ryun Kyung Lee, Kee-Sun Lee","doi":"10.1007/s13391-025-00616-1","DOIUrl":"10.1007/s13391-025-00616-1","url":null,"abstract":"<div><p>Photocatalytic WO<sub>3</sub> materials with visible light responsiveness have attracted interest in eco-friendly wastewater treatment, antimicrobial applications, and indoor air purification. In this study, WO<sub>3</sub>/amorphous carbon dot composite coatings were produced on glass substrates using an ultrasonic spray deposition followed by heat treatment, enabling scalable and cost-effective large-area immobilized product. The precursor suspension combined hydrothermally synthesized WO<sub>3</sub> nano cubes with citric acid (CA), which served as a carbon source. Drying and heat treatment induced carbonization of CA, resulting in a crack-free, adherent composite thin coatings comprising WO<sub>3</sub> nano cubes interconnected by localized amorphous carbon dots (aCDs), as confirmed by Raman, FTIR, and HRTEM analyses. The carbonaceous bridges enhanced interparticle connectivity and coating adhesion to the substrate. Photocatalytic degradation of methylene blue under visible light (Xenon lamp) achieved 95% reduction in 200 min in basic pH. Photoluminescence spectroscopy confirmed synergistic interaction between WO<sub>3,</sub> and carbon dots promotes charge separation improving photocatalytic efficiency. Since the catalysts are stuck on the glass substrate surface compactly, the reusability becomes easier. This immobilized WO<sub>3</sub>/Carbon composite coating demonstrates promising potential for environmentally sustainable photocatalytic applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 2","pages":"146 - 156"},"PeriodicalIF":2.6,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147339719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Preparation and Xylene Gas Sensing Performances of SnO2/Fe2(MoO4)3 Nanocomposites SnO2/Fe2(MoO4)3纳米复合材料的制备及其二甲苯气敏性能

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-12-15 DOI: 10.1007/s13391-025-00623-2

Yiyue Wang, Miao Hu, Ping Fu, Zhe Chen, Zhidong Lin, Liming Liu

{"title":"Preparation and Xylene Gas Sensing Performances of SnO2/Fe2(MoO4)3 Nanocomposites","authors":"Yiyue Wang, Miao Hu, Ping Fu, Zhe Chen, Zhidong Lin, Liming Liu","doi":"10.1007/s13391-025-00623-2","DOIUrl":"10.1007/s13391-025-00623-2","url":null,"abstract":"<div><p>SnO<sub>2</sub>/Fe<sub>2</sub>(MoO<sub>4</sub>)<sub>3</sub> nanocomposites were prepared by two-step hydrothermal processes. The SnO<sub>2</sub>/Fe<sub>2</sub>(MoO<sub>4</sub>)<sub>3</sub> nanocomposite with a molar ratio of Sn to Fe of 1.4 consisted of rutile-type SnO<sub>2</sub> and monoclinic Fe<sub>2</sub>(MoO<sub>4</sub>)<sub>3</sub>, and the crystallite sizes of SnO<sub>2</sub> and Fe<sub>2</sub>(MoO<sub>4</sub>)<sub>3</sub> in the composite were about 8 nm. The sensor based on the SnO<sub>2</sub>/Fe<sub>2</sub>(MoO<sub>4</sub>)<sub>3</sub> nanocomposite shows a high response of 116.7 to 100 ppm xylene at 200 °C, which was 9.8 times higher than the pure SnO<sub>2</sub> sensor. The SnO<sub>2</sub>/Fe<sub>2</sub>(MoO<sub>4</sub>)<sub>3</sub> sensor exhibited excellent response, low detection limit, and selectivity to xylene compared with the SnO<sub>2</sub> sensor. The improved gas-sensing of the SnO<sub>2</sub>/Fe<sub>2</sub>(MoO<sub>4</sub>)<sub>3</sub> nanocomposite was ascribed to the tiny nanocrystallites and large specific surface area and the good catalysis and absorption of Fe<sub>2</sub>(MoO<sub>4</sub>)<sub>3</sub> to xylene.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"288 - 295"},"PeriodicalIF":2.6,"publicationDate":"2025-12-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silver Cold Welding Integration and Back Reflector Performance for Optoelectronic Applications 银冷焊集成及光电应用的后反射器性能

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-12-13 DOI: 10.1007/s13391-025-00619-y

Yongmin Baek, Young Ho Chu, Jongchan Ryu, Hongju Kim, Taehoon Kim, Seongheon Kim, Yun Seog Lee

{"title":"Silver Cold Welding Integration and Back Reflector Performance for Optoelectronic Applications","authors":"Yongmin Baek, Young Ho Chu, Jongchan Ryu, Hongju Kim, Taehoon Kim, Seongheon Kim, Yun Seog Lee","doi":"10.1007/s13391-025-00619-y","DOIUrl":"10.1007/s13391-025-00619-y","url":null,"abstract":"<p>Metal back reflectors enhance photodetector efficiency by enabling photon recycling, where unabsorbed photons reflect back through the active layer. Gold has been the standard material despite substantial optical losses in the visible spectrum due to interband transitions. Silver exhibits superior reflectance exceeding 95% across visible to infrared wavelengths but suffers from oxidation susceptibility that has limited its implementation. Here we show that direct silver wafer bonding using Ti/Pt/Ag stacks achieves reliable heterogeneous integration while maintaining exceptional optical properties. The bonding occurs at 200 °C through atomic interdiffusion, with platinum acting as an effective diffusion barrier. Silver reflectors maintain low roughness below 1.68 nm and over 95% reflectance after thermal processing at 350 °C. Transfer matrix calculations reveal that silver reduces parasitic metal absorption by up to 60 percentage points compared to gold in the blue spectrum. This translates to quantum efficiency improvement for InGaN photodetectors reaching a maximum of 18% at 40° incidence angle and consistent advantages across all wavelengths. These findings establish silver direct bonding as a superior alternative for photodetectors and thermophotovoltaic devices.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"264 - 272"},"PeriodicalIF":2.6,"publicationDate":"2025-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Photosensitive Phototransistor Based on CsPbBr3 NCs-Graphene Mixed Channel 基于CsPbBr3 ncs -石墨烯混合通道的高光敏光电晶体管

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-12-02 DOI: 10.1007/s13391-025-00622-3

Yongli Che, Xiaolong Cao, Jianquan Yao

{"title":"Highly Photosensitive Phototransistor Based on CsPbBr3 NCs-Graphene Mixed Channel","authors":"Yongli Che, Xiaolong Cao, Jianquan Yao","doi":"10.1007/s13391-025-00622-3","DOIUrl":"10.1007/s13391-025-00622-3","url":null,"abstract":"<div><p>Cesium lead halide perovskites (CsPbX<sub>3</sub>, X = Cl, Br, I) nanocrystals (NCs) with high absorption coefficient are recognized as advantageous active materials for photodetectors. Here, a solution-based phototransistor using CsPbBr<sub>3</sub> NCs-graphene heterostructure as channel materials was fabricated and investigated. The CsPbBr<sub>3</sub> NCs-graphene hybrid phototransistor exhibited outstanding optoelectrical properties with high responsivity, external quantum efficiency and detectivity of 48 A/W, 36% and 1.5 × 10<sup>7</sup> Jones under power density of 56 mW/cm<sup>2</sup> of 405 nm light. Moreover, the device showed an excellent photo-switching stability and reproducibility as well as fast response with rise/fall times of 7.4/26.8 ms, respectively. The high sensitivity of the phototransistor results from the large absorption of incoming photons in CsPbBr<sub>3</sub> NCs, the high carrier mobility of graphene, and the gate-modulated contact barrier height at CsPbBr<sub>3</sub> NCs-graphene interface. This generic strategy by combining photosensitive materials and 2D materials into heterostructures to fabricate phototransistor paves a route to the application of inexpensive, highly sensitive, and integrable devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"238 - 242"},"PeriodicalIF":2.6,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent Advances in Hafnium Oxide-Based Ferroelectric Thin-Film Transistors with Oxide Semiconductor Channels 氧化铪基氧化半导体通道铁电薄膜晶体管的研究进展

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-28 DOI: 10.1007/s13391-025-00621-4

Jaejoon Kim, Joonyong Kim, Hyeong Seok Choi, Dong Hee Han, Hyun Woo Jeong, Younghwan Lee, Min Hyuk Park

{"title":"Recent Advances in Hafnium Oxide-Based Ferroelectric Thin-Film Transistors with Oxide Semiconductor Channels","authors":"Jaejoon Kim, Joonyong Kim, Hyeong Seok Choi, Dong Hee Han, Hyun Woo Jeong, Younghwan Lee, Min Hyuk Park","doi":"10.1007/s13391-025-00621-4","DOIUrl":"10.1007/s13391-025-00621-4","url":null,"abstract":"<div><p>Ferroelectric thin-film transistor (FeTFT) incorporating hafnium oxide-based ferroelectric layers and oxide semiconductor channels has garnered significant attention for its potential in next-generation memory and storage applications within classical computing and emerging computing technologies such as in-memory computing and neuromorphic computing. Their characteristic nonvolatility, scalability, and high power-efficiency render FeTFT suitable for emerging data-intensive and low-power electronic applications. However, several limitations, such as insufficient polarization compensation coming from absence of minority carriers, interfacial instability owing to defects, and performance degradation under aggressive scaling, hinder their practical deployment in semiconductor industry. This review provides a critical examination of recent material and structural engineering strategies devised to overcome the aforementioned challenges. These include channel properties modulation to improve carrier mobility and efficiency of polarization-driven channel conductance modulation, incorporating interfacial layers to suppress trap states and oxygen vacancies and optimizing gate stack to enhance electrostatic control. The implications of these approaches on performance metrics including memory window, endurance, and retention characteristics are systematically discussed, alongside insights into their impact on ferroelectric switching dynamics and reliability. This work aims to offer a comprehensive perspective on the progress and future direction of oxide semiconductor-based FeTFT toward their integration into multifunctional, memory-centric electronics.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><img></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"195 - 220"},"PeriodicalIF":2.6,"publicationDate":"2025-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Pt Seed-Layer Thickness and Annealing on the Interfacial Reaction and Contact Resistivity of p⁺-In0.53Ga0.47As Pt种子层厚度和退火对p + -In0.53Ga0.47As的界面反应和接触电阻率的影响

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-28 DOI: 10.1007/s13391-025-00618-z

Jongchan Ryu, Hongju Kim, Young Ho Chu, Seongheon Kim, Yongmin Baek, Taehoon Kim, Yun Seog Lee

{"title":"Effect of Pt Seed-Layer Thickness and Annealing on the Interfacial Reaction and Contact Resistivity of p⁺-In0.53Ga0.47As","authors":"Jongchan Ryu, Hongju Kim, Young Ho Chu, Seongheon Kim, Yongmin Baek, Taehoon Kim, Yun Seog Lee","doi":"10.1007/s13391-025-00618-z","DOIUrl":"10.1007/s13391-025-00618-z","url":null,"abstract":"<div><p>Achieving thermally stable ohmic contact with low specific contact resistivity (<i>ρ</i><sub>c</sub>) is essential for high-performance photovoltaic and opto-electronic devices. In this study, we systematically investigate the effects of Pt seed-layer thickness and rapid thermal annealing temperature on the interfacial reaction between Pt/Ti/Pt/Au contacts and <i>p</i>⁺-In<sub>0.53</sub>Ga<sub>0.47</sub>As. Transmission line method measurements reveal a strong dependence of <i>ρ</i><sub>c</sub> on both Pt thickness and annealing temperature, exhibiting a non-monotonic trend with an optimum at a 9 nm Pt seed layer and 380 ℃ anneal. A minimal <i>ρ</i><sub>c</sub> (~ 3 × 10<sup>–6</sup> Ω·cm<sup>2</sup>) indicate the formation of a continuous but non-overgrown interfacial reaction layer that enables uniform tunneling transport. In contrast, thinner or thicker Pt layers yield increased <i>ρ</i><sub>c</sub> due to discontinuous coverage or over-reaction, respectively. The optimized ohmic contacts maintain low resistivity even after 450 °C annealing, confirming their superior thermal robustness. These findings present a clear process window for reproducible, low-resistance, and thermally stable ohmic contacts to <i>p</i>⁺-In<sub>0.53</sub>Ga<sub>0.47</sub>As, offering practical guidance for advanced device fabrication such as photovoltaics and photodetector applications.</p><h3>Graphic Abstract</h3><div><figure><div><div><picture><source><img></source></picture><span>The alternative text for this image may have been generated using AI.</span></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"22 3","pages":"243 - 250"},"PeriodicalIF":2.6,"publicationDate":"2025-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147743683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Correction: CVD Synthesis of High-quality Continuous Fe-Doped WSe2 Using a Solution-Based Precursor 更正：使用溶液为基础的前驱体CVD合成高质量连续掺铁的WSe2

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-11-25 DOI: 10.1007/s13391-025-00617-0

Khalid Mehmood, Ji Hwan Kim, Eun Bee Ko, Ho Min Kang, Jun Young Ma, Young Min Park, Jin Ho Kim, Min Gi Son, Sung Jin An, Hyun Ho Kim

引用次数: 0