Electronic Materials Letters最新文献_第3页

ZIFs-Derived Bimetallic Synergistic Cu/FeNC Catalyst for Improving ORR Performance zifs衍生双金属协同Cu/FeNC催化剂改善ORR性能

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-04-17 DOI: 10.1007/s13391-025-00569-5

Xinfu He, Di Gao, Hongju Wu, Minlong Guan, Chuhan Wang, Jianglong Zhou, Chi Ma, Yating Zhang, Anning Zhou

{"title":"ZIFs-Derived Bimetallic Synergistic Cu/FeNC Catalyst for Improving ORR Performance","authors":"Xinfu He, Di Gao, Hongju Wu, Minlong Guan, Chuhan Wang, Jianglong Zhou, Chi Ma, Yating Zhang, Anning Zhou","doi":"10.1007/s13391-025-00569-5","DOIUrl":"10.1007/s13391-025-00569-5","url":null,"abstract":"<div><p>The development of low-cost, high-activity non-precious metal catalysts for the oxygen reduction reaction (ORR) is of great significance in promoting the large-scale commercialization of fuel cells (FCs). This study successfully prepared nitrogen-coordinated Cu/Fe bimetallic-doped porous carbon catalysts (Cu/FeNC), which enhance the catalytic activity and stability of the ORR by introducing Cu to optimize the electronic structure of the active site of Fe. Additionally, the influence of Cu/Fe ratio and calcination temperature on the physicochemical properties and performance of the catalysts was investigated. The optimized Cu/FeNC catalysts exhibited a large specific surface area (567.8 m<sup>2</sup>·g<sup>− 1</sup>) and an abundant mesoporous structure. In alkaline media, the Cu/FeNC demonstrated excellent ORR catalytic performance, characterized by a high onset potential of 0.98 V, a half-wave potential of 0.86 V, and a limiting current density of 5.2 mA·cm<sup>− 2</sup>. Compared to commercial Pt/C, Cu/FeNC exhibited superior methanol tolerance and better long-term stability, retaining 91.2% of its activity after 6 h. This study provides a novel approach for synthesizing high-performance and low-cost bimetallic catalysts.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 4","pages":"540 - 551"},"PeriodicalIF":2.6,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145143841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Microstructure, Mechanical Properties and Thermal Conductivity of Al-RE-xSi Alloys Al-RE-xSi合金的显微组织、力学性能和导热性能

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2025-04-05 DOI: 10.1007/s13391-025-00551-1

Hyeon-Taek Son, Yong-Ho Kim, Hyo-Sang Yoo, Byong-Kwon Lee, Eun-Chan Ko, Seong-Ho Lee, Gyu-Seok Lee

引用次数: 0

Persistence Luminescence and Mechanoluminescence in Er3+/Eu2+ Co-Doped SrS/SrZnSO Composites Er3+/Eu2+共掺杂SrS/SrZnSO复合材料的持续发光和机械发光

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2025-04-04 DOI: 10.1007/s13391-025-00566-8

Ligang Zhang, Xiaoming Xu, Lihong Ma, Haosen Wang

{"title":"Persistence Luminescence and Mechanoluminescence in Er3+/Eu2+ Co-Doped SrS/SrZnSO Composites","authors":"Ligang Zhang, Xiaoming Xu, Lihong Ma, Haosen Wang","doi":"10.1007/s13391-025-00566-8","DOIUrl":"10.1007/s13391-025-00566-8","url":null,"abstract":"<div><p>A series of Er<sup>3+</sup>/Eu<sup>2+</sup>-activated SrS/SrZnSO with different Er<sup>3+</sup>/Eu<sup>2+</sup>concentrations were synthesized at 1300℃ for 3 h through high temperature solid-state reaction, and their persistence luminescence and mechanoluminescence properties were studied. Upon 450 nm laser excitation, SrS/SrZnSO:Er<sup>3+</sup>/Eu<sup>2+</sup> emitted orange-red light, which could be observed with the naked eyes. When the laser was removed, it showed long afterglow orange-red luminescence. The brightness and duration of the long afterglow increase with the increase concentration of Er<sup>3+</sup>/Eu<sup>2+</sup> from x:y = 0.5%:1% to 3%:1%. SrS/SrZnSO:Er<sup>3+</sup>/Eu<sup>2+</sup> was confirmed as an excellent persistent luminescence material since it could continuously emit light for nearly 10 min. Moreover, under pressure stimulation SrS/SrZnSO:Er<sup>3+</sup>/Eu<sup>2+</sup>showed a novel type of mechanoluminescence (ML) with the emitting bright green light which linearly depended on the force. Under the same force of friction, the sample SrS/SrZnSO:Er<sup>3+</sup>/Eu<sup>2+</sup> with Er<sup>3+</sup>/Eu<sup>3</sup> = 1%:0% emitted the strongest ML among prepared samples. Furthermore, the mechanism of mechanoluminescence was studied in details. This study can expand the family of ML materials while promoting the applications of mechanoluminescence materials in damage diagnosis, human-machine interfaces, and pressure sensing.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"443 - 455"},"PeriodicalIF":2.1,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Observation of Rashba Effect and Nonreciprocal Transport in Bi2Te3 Bi2Te3中Rashba效应和非互易输运的观察

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2025-03-28 DOI: 10.1007/s13391-025-00558-8

Jeong Ung Ahn, Eunsu Lee, Seongbeom Kim, Ki Hyuk Han, Seong Been Kim, OukJae Lee, Gyu-Chul Yi, Hyun Cheol Koo

{"title":"Observation of Rashba Effect and Nonreciprocal Transport in Bi2Te3","authors":"Jeong Ung Ahn, Eunsu Lee, Seongbeom Kim, Ki Hyuk Han, Seong Been Kim, OukJae Lee, Gyu-Chul Yi, Hyun Cheol Koo","doi":"10.1007/s13391-025-00558-8","DOIUrl":"10.1007/s13391-025-00558-8","url":null,"abstract":"<div><p>Topological insulators (TIs) represent a unique state of matter that has attracted significant interest in condensed matter physics due to their surface conduction states with high spin polarization. Despite extensive studies on the properties of TIs, there has been limited exploration of the Rashba parameter and large-scale film growth. In this work, we investigate the Rashba effect in molecular-beam-epitaxy(MBE)-grown Bi<sub>2</sub>Te<sub>3</sub> channels by measuring anisotropic magnetoresistance (AMR). The extracted Rashba parameter is as large as 16.3 eV·Å, significantly exceeding values reported in previous studies. This strong Rashba field is attributed to the minimization of imperfections and crystal defects during film fabrication. Furthermore, nonreciprocal charge transport induced by the Rashba-like effective field is clearly observed up to room temperature through harmonic resistance measurements. The temperature dependence of the nonreciprocal coefficient exhibits a non-monotonic behavior, which is believed to arise from the temperature dependence of the Fermi level position.</p><h3>Graphic Abstract</h3><div><figure><div><div><picture><img></picture></div><div><p>Topological insulators (TIs) represent a unique state of matter that has attracted significant interest in condensed matter physics due to their surface conduction states with high spin polarization. In this work, we investigate the Rashba effect in molecular-beam-epitaxy(MBE)-grown Bi<sub>2</sub> Te<sub>3</sub> channel and temperature dependence of nonreciprocal charge transport.</p></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"420 - 428"},"PeriodicalIF":2.1,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Perspective: Atomic Layer Deposition Strategies for Surface Passivation of Metal-Halide Perovskite Absorbers 金属卤化物钙钛矿吸收剂表面钝化的原子层沉积策略

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2025-03-22 DOI: 10.1007/s13391-025-00563-x

George Kwesi Asare, Joshua Sraku Adu, Byungha Shin, David J. Fermin, Helen Hejin Park

{"title":"Perspective: Atomic Layer Deposition Strategies for Surface Passivation of Metal-Halide Perovskite Absorbers","authors":"George Kwesi Asare, Joshua Sraku Adu, Byungha Shin, David J. Fermin, Helen Hejin Park","doi":"10.1007/s13391-025-00563-x","DOIUrl":"10.1007/s13391-025-00563-x","url":null,"abstract":"<div><p>Recent advancements have been made in perovskite solar cells (PSCs) using atomic layer deposition (ALD) of aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) and other suitable metal oxides such as zirconium oxide (ZrO<sub>2</sub>) as a perovskite surface passivation technique. ALD has demonstrated significant potential for enhancing photovoltaic (PV) performance and the long-term light, thermal, humidity, and ultraviolet (UV) stability of PSCs by addressing surface defects leading to higher charge extraction and mitigating environmental degradation with only a few nanometers of thickness. However, direct ALD deposition on perovskite films can sometimes degrade the perovskite film from ALD precursor reactivity, elevated temperatures, and vacuum-induced instabilities. This perspective discusses recent strategies, challenges, and future directions for surface passivation of the perovskite solar absorber using ALD to improve device performance and long-term stability for commercialization of PSCs.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"331 - 336"},"PeriodicalIF":2.1,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00563-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Device Failure Analysis with Epi-Si Wafer Using Raman Shift Matching Method 用拉曼位移匹配法分析外延硅晶圆器件失效

IF 2.6 4区材料科学

Electronic Materials Letters Pub Date : 2025-03-18 DOI: 10.1007/s13391-025-00567-7

Tae Min Choi, Eunmi Choi, JinUk Yoo, Eun Su Jung, Hwa Rim Lee, Songhun Yoon, Sung Gyu Pyo

{"title":"Device Failure Analysis with Epi-Si Wafer Using Raman Shift Matching Method","authors":"Tae Min Choi, Eunmi Choi, JinUk Yoo, Eun Su Jung, Hwa Rim Lee, Songhun Yoon, Sung Gyu Pyo","doi":"10.1007/s13391-025-00567-7","DOIUrl":"10.1007/s13391-025-00567-7","url":null,"abstract":"<div><p>In this study, a multi-wavelengths Raman spectroscopy method was employed to evaluate the quality of epitaxial grown silicon (Epi-Si) wafers by analyzing defects, stress, and crystallinity. Unlike conventional electrical property analysis, which is typically conducted post-process through device failure testing, this study demonstrated the potential for non-destructive and real-time assessment of thin film properties at the wafer stage using Raman spectroscopy. By comparing two 8-inch wafers fabricated under different deposition conditions, Raman shift and Full Width at Half Maximum (FWHM) were established as primary evaluation indicators to analyze the point-specific characteristics of the wafers. We applied multi-wavelength Raman spectroscopy with 532 nm and 405 nm laser to measure stress distribution of wafer - scale Epi-Si layers and compared it with wafer failure maps to demonstrate the validity of stress analysis of thin films using Raman spectroscopy. The residual stress and FWHM of epitaxially grown Si thin films were quantitatively analyzed for 9 points of Epi-Si. The point-by-point residual stress and crystallinity evaluations measured by Raman spectroscopy were in good agreement with the wafer failure map, and the stress variation in the failure region could be evaluated highlighting g potential of Raman spectroscopy enabling precise analysis across a broader range of samples and having the practical utility for non-destructive, early-stage assessment of thin film properties, as well as for the in-situ detection of defects and stress.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 4","pages":"532 - 539"},"PeriodicalIF":2.6,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145144076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring Fe-Doping Effects in K0.5Na0.5NbO3 (KNN) for Enhancing Electrical and Magnetic Properties K0.5Na0.5NbO3 （KNN）中fe掺杂效应的研究

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2025-03-18 DOI: 10.1007/s13391-025-00564-w

Pooja Dahiya, Ashima Hooda

{"title":"Exploring Fe-Doping Effects in K0.5Na0.5NbO3 (KNN) for Enhancing Electrical and Magnetic Properties","authors":"Pooja Dahiya, Ashima Hooda","doi":"10.1007/s13391-025-00564-w","DOIUrl":"10.1007/s13391-025-00564-w","url":null,"abstract":"<p>K<sub>0.5</sub>Na<sub>0.5</sub>NbO<sub>3</sub>-based ceramics owing to their outstanding properties have compelled the researcher’s attention as an innovative multifunctional material. The structural, dielectric, electrical and magnetic properties of polycrystalline perovskites of K<sub>0.5</sub>Na<sub>0.5</sub>Fe<sub><i>x</i></sub>Nb<sub>1–<i>x</i></sub>O<sub>3</sub> (<i>x</i> = 0.10, 0.15, 0.20) prepared by the conventional solid-state reaction method were investigated systematically. Interestingly, the XRD results revealed the successful formation of pure perovskite orthorhombic crystal structures without any secondary phases. Furthermore, Rietveld refinement analysis indicated a significant variation in the lattice parameters and unit cell volume. The microstructural analysis emphasized unique irregular rectangular grain morphologies with an average size of 0.6–0.9 μm, while EDX spectra affirmed compositional uniformity. Impedance spectroscopy provided a thorough analysis of the contributions from grain and grain boundary effects, elucidating the mechanisms behind the enhanced dielectric constant. The narrowing of the band gap is assessed using diffuse reflectance spectroscopy. The prepared samples can be utilized to improve the performance of materials used in optical data storage devices. The presence of Fe in various oxidation states, including Fe<sup>2+</sup>and Fe<sup>3+</sup> was explored through X-ray photoelectron spectroscopy analysis. The magnetic measurements show that the prepared samples exhibit paramagnetic behavior. This research explores the ultimate functionalities of these samples paving the way for their application in advanced electronic and magnetic technologies.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"375 - 394"},"PeriodicalIF":2.1,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Ar/N2 Two-Step Plasma Treatments on the Interfacial Characteristics of Low-Temperature Cu-Cu Direct Bonding Ar/N2两步等离子体处理对低温Cu-Cu直接键合界面特性的影响

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2025-03-17 DOI: 10.1007/s13391-025-00565-9

Gahui Kim, Seonghun Choi, Yongbeom Kwon, Sarah Eunkyung Kim, Hoo-Jeong Lee, Young-Bae Park

{"title":"Effect of Ar/N2 Two-Step Plasma Treatments on the Interfacial Characteristics of Low-Temperature Cu-Cu Direct Bonding","authors":"Gahui Kim, Seonghun Choi, Yongbeom Kwon, Sarah Eunkyung Kim, Hoo-Jeong Lee, Young-Bae Park","doi":"10.1007/s13391-025-00565-9","DOIUrl":"10.1007/s13391-025-00565-9","url":null,"abstract":"<div><p>The effects of Ar/N<sub>2</sub> two-step plasma treatments on the interfacial adhesion energies of low-temperature Cu–Cu bonding interfaces were systematically investigated with four-point bending (4-PB) test. It was confirmed that the Cu surface roughness had increased, and a Cu nitride layer was formed by the Ar/N<sub>2</sub> two-step plasma treatment. X-ray photoelectron spectroscopy clearly showed that the Ar/N<sub>2</sub> two-step plasma treatment formed less Cu oxide due to the formation of a Cu nitride layer. As a result of the 4-PB test, as the N<sub>2</sub> RF power was increased, the interfacial adhesion energy decreased. An analysis of the delaminated surface after the 4-PB test confirmed that a Cu nitride layer was not formed, which was thought to be due to decomposition during the bonding process. As the N<sub>2</sub> RF power was increased, the roughness also increased, leading to poor Cu-Cu bonding. The decrease in Cu-N bonding resulted in the progression of Cu oxidation. Additionally, the interfacial adhesion energy decreased due to the formation of a disordered Cu layer on the Cu surface.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"429 - 442"},"PeriodicalIF":2.1,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Grain Size Effects on Interfacial Reactions in Fe-Co Alloy Barrier Micro-bumps 晶粒尺寸对Fe-Co合金势垒微凸起界面反应的影响

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2025-03-11 DOI: 10.1007/s13391-025-00562-y

Chongyang Li, Pengfei Chang, Peixin Chen, Anmin Hu, Ming Li

{"title":"Grain Size Effects on Interfacial Reactions in Fe-Co Alloy Barrier Micro-bumps","authors":"Chongyang Li, Pengfei Chang, Peixin Chen, Anmin Hu, Ming Li","doi":"10.1007/s13391-025-00562-y","DOIUrl":"10.1007/s13391-025-00562-y","url":null,"abstract":"<div><p>Micro-bump plays a pivotal role in enabling high density interconnect required for three-dimensional integrated-circuits (3D ICs) packaging. However, the growth rate of intermetallic compounds (IMCs) in micro-bumps increases with shrinking bump size due to the emergence of surface diffusion channels, posing significant challenges to the reliability of small-sized micro-bumps. In this study, Fe-Co alloys were introduced as innovative diffusion barrier layers to effectively suppress IMC growth in solder bumps, achieving an exceptionally low IMC growth rate of 0.0118 μm/h<sup>0.5</sup>. No sidewall IMCs were observed in micro-bumps, demonstrating the Fe-Co alloys’ effectiveness in inhibiting surface diffusion. Notably, an interesting size effect on IMC growth was observed, with larger Cu plate solder joints exhibiting faster IMC growth compared to 12 μm micro-bumps during aging. This behavior was attributed to grain size differences in the Fe-Co barriers, where smaller grain sizes in larger joints facilitated grain boundary diffusion, thereby accelerating IMC growth. Finite element analysis (FEA) simulations further demonstrated that variations in current density during electrodeposition led to differences in grain size. These findings propose a powerful candidate for high-performance barrier materials in small-sized micro-bumps and provide critical insights into the role of grain boundary diffusion in IMC growth, offering valuable strategies for enhancing the reliability of electronic packaging.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"473 - 485"},"PeriodicalIF":2.1,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Flexible Micro-LEDs: Advanced Fabrication Techniques and Applications 柔性微型led：先进的制造技术和应用

IF 2.1 4区材料科学

Electronic Materials Letters Pub Date : 2025-03-08 DOI: 10.1007/s13391-025-00559-7

Sung Jin Seo, Sohyeon Park, Ho Won Jang

{"title":"Flexible Micro-LEDs: Advanced Fabrication Techniques and Applications","authors":"Sung Jin Seo, Sohyeon Park, Ho Won Jang","doi":"10.1007/s13391-025-00559-7","DOIUrl":"10.1007/s13391-025-00559-7","url":null,"abstract":"<div><p>Flexible micro light-emitting diodes (micro-LEDs) have garnered significant attention due to their exceptional properties, including high luminance, energy efficiency, and mechanical robustness, positioning them as a promising technology for next-generation displays and electronic devices. As the Internet of Things (IoT) paradigm advances, the demand for portable and adaptable devices has led to an acceleration in flexible micro-LED research. This review comprehensively examines advanced fabrication techniques for flexible micro-LEDs, encompassing epitaxial growth, various lift-off processes, and mass transfer strategies. These methods are systematically integrated to optimize device performance and scalability. Furthermore, it explores diverse applications of flexible micro-LEDs, ranging from flexible displays and biomedical sensors to IoT and smart devices. These applications harness the unique properties of flexible micro-LEDs, enabling their integration into various form factors and opening up new possibilities for user interfaces and information displays. This work emphasizes the transformative role of flexible micro-LEDs in driving innovations across multiple fields, paving the way for the next generation of flexible and intelligent technologies.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 3","pages":"311 - 330"},"PeriodicalIF":2.1,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-025-00559-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0