Observation of Rashba Effect and Nonreciprocal Transport in Bi2Te3

IF 2.1 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Electronic Materials Letters Pub Date : 2025-03-28 DOI:10.1007/s13391-025-00558-8

Jeong Ung Ahn, Eunsu Lee, Seongbeom Kim, Ki Hyuk Han, Seong Been Kim, OukJae Lee, Gyu-Chul Yi, Hyun Cheol Koo

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Abstract

Topological insulators (TIs) represent a unique state of matter that has attracted significant interest in condensed matter physics due to their surface conduction states with high spin polarization. Despite extensive studies on the properties of TIs, there has been limited exploration of the Rashba parameter and large-scale film growth. In this work, we investigate the Rashba effect in molecular-beam-epitaxy(MBE)-grown Bi₂Te₃ channels by measuring anisotropic magnetoresistance (AMR). The extracted Rashba parameter is as large as 16.3 eV·Å, significantly exceeding values reported in previous studies. This strong Rashba field is attributed to the minimization of imperfections and crystal defects during film fabrication. Furthermore, nonreciprocal charge transport induced by the Rashba-like effective field is clearly observed up to room temperature through harmonic resistance measurements. The temperature dependence of the nonreciprocal coefficient exhibits a non-monotonic behavior, which is believed to arise from the temperature dependence of the Fermi level position.

Graphic Abstract

Topological insulators (TIs) represent a unique state of matter that has attracted significant interest in condensed matter physics due to their surface conduction states with high spin polarization. In this work, we investigate the Rashba effect in molecular-beam-epitaxy(MBE)-grown Bi₂ Te₃ channel and temperature dependence of nonreciprocal charge transport.

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Bi2Te3中Rashba效应和非互易输运的观察

拓扑绝缘体（TIs）是一种独特的物质状态，由于其具有高自旋极化的表面导态而引起了凝聚态物理学的极大兴趣。尽管对ti的性质进行了广泛的研究，但对Rashba参数和大规模薄膜生长的探索有限。在这项工作中，我们通过测量各向异性磁电阻（AMR）来研究分子束外延（MBE）生长的Bi2Te3通道中的Rashba效应。提取的Rashba参数高达16.3 eV·Å，显著超过了以往研究报道的值。这种强Rashba场归因于在薄膜制造过程中缺陷和晶体缺陷的最小化。此外，通过谐波电阻测量，可以清楚地观察到室温下类拉什巴有效场诱导的非互易电荷输运。非倒易系数的温度依赖性表现出非单调性，这被认为是由费米能级位置的温度依赖性引起的。拓扑绝缘体（TIs）是一种独特的物质状态，由于其具有高自旋极化的表面导电状态，在凝聚态物理学中引起了极大的兴趣。在这项工作中，我们研究了分子束外延（MBE）生长的bi2te3通道中的Rashba效应和非互易电荷输运的温度依赖性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Electronic Materials Letters 工程技术-材料科学：综合

CiteScore

4.70

自引率

20.80%

发文量

审稿时长

2.3 months

期刊介绍： Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.