Gahui Kim, Seonghun Choi, Yongbeom Kwon, Sarah Eunkyung Kim, Hoo-Jeong Lee, Young-Bae Park
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Effect of Ar/N2 Two-Step Plasma Treatments on the Interfacial Characteristics of Low-Temperature Cu-Cu Direct Bonding
The effects of Ar/N2 two-step plasma treatments on the interfacial adhesion energies of low-temperature Cu–Cu bonding interfaces were systematically investigated with four-point bending (4-PB) test. It was confirmed that the Cu surface roughness had increased, and a Cu nitride layer was formed by the Ar/N2 two-step plasma treatment. X-ray photoelectron spectroscopy clearly showed that the Ar/N2 two-step plasma treatment formed less Cu oxide due to the formation of a Cu nitride layer. As a result of the 4-PB test, as the N2 RF power was increased, the interfacial adhesion energy decreased. An analysis of the delaminated surface after the 4-PB test confirmed that a Cu nitride layer was not formed, which was thought to be due to decomposition during the bonding process. As the N2 RF power was increased, the roughness also increased, leading to poor Cu-Cu bonding. The decrease in Cu-N bonding resulted in the progression of Cu oxidation. Additionally, the interfacial adhesion energy decreased due to the formation of a disordered Cu layer on the Cu surface.
期刊介绍：
Electronic Materials Letters is an official journal of the Korean Institute of Metals and Materials. It is a peer-reviewed international journal publishing print and online version. It covers all disciplines of research and technology in electronic materials. Emphasis is placed on science, engineering and applications of advanced materials, including electronic, magnetic, optical, organic, electrochemical, mechanical, and nanoscale materials. The aspects of synthesis and processing include thin films, nanostructures, self assembly, and bulk, all related to thermodynamics, kinetics and/or modeling.
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