Electronic Materials Letters最新文献

{"title":"Development of a Semi-embedded Nanofiber Network in a Micro-wrinkle Structure Based on a Heterogeneous Polymer Bilayer for High-performance Stretchable Conductive Films","authors":"Sung Hyeok Lee,&nbsp;Hwan-Jin Jeon","doi":"10.1007/s13391-025-00594-4","DOIUrl":"10.1007/s13391-025-00594-4","url":null,"abstract":"<div><p>The ongoing development of flexible and wearable devices means that the processes and materials for fabricating stretchable electrodes have been the focus of significant research. We developed a high-performance stretchable conductive film with an elongation of up to 950% by fusing conductive nanofibers and efficient micro-wrinkle-structured films. A large-area micro-wrinkle-structured substrate was fabricated by utilizing the difference in the elastic moduli of Polydimethylsiloxane (PDMS) and Ecoflex. To improve the mechanical performance of the conductive nanofiber film, metal nanofibers were semi-embedded on the surface of the micro-wrinkled structure to strongly bond the film and nanofibers together. The fabrication process of the micro-wrinkle-structured film with the semi-embedded conductive nanofiber network (MWF-SCN) can simply and inexpensively fabricate a large-area micro-wrinkle structure, and the mechanical stability can be significantly improved by semi-embedding highly conductive metal nanofiber networks with an extremely high aspect ratio in the PDMS layer. In addition, the electrical properties were maintained even during repeated bending and stretching. This approach can provide robust conductive networks with improved durability and electrical stability, thus offering promising alternatives for numerous future electronic, optical, display, energy, and sensor devices.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"810 - 818"},"PeriodicalIF":2.6,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural Continuity and Orientation Effects of Organometallic Perovskites","authors":"Minhee Kim,&nbsp;Hyeonseok Lee,&nbsp;Kyoungtae Kim,&nbsp;Jinhyun Kim","doi":"10.1007/s13391-025-00592-6","DOIUrl":"10.1007/s13391-025-00592-6","url":null,"abstract":"<div><p>Organometallic perovskite is well known for its excellent optoelectronic properties, which can enable the next generation of optoelectronics. Despite its excellent charge generation, diffusion length, and bandgap properties, the transport mechanism plays a crucial role in device operation. Generated carriers (holes and electrons) move through both the bulk and interfaces, where defects can trap them. Extensive research has shown that quasi-2D, cation/anion engineering, and MACl-modified are widely applied, leading to enhanced stability and device performance. However, modified perovskites often lead to structural disorientation, resulting in recombination or charge accumulation within the perovskite lattice. In this article, quasi-2D and modified 3D perovskite MACl-modified and cation/anion engineering) are compared. Specifically, phenethylammonium iodide (PEAI) is used as a 2D spacer in quasi-2D perovskite, 3D perovskite is modified by methylammonium chloride (MACl) as an additive, along with methylamine (MA), formamidinium (FA), Iodine, and bromine engineering. Both materials exhibit proper optical and electronic characteristics, but the final solar cell performance differs significantly. Devices with quasi-2D perovskite exhibit multiple n-values with distorted perovskite orientation, whereas device of modified 3D perovskite leads to superior device performance, achieving up to 22.6% power conversion efficiency (PCE). Therefore, this article highlights the importance of 3D perovskite continuity in perovskite solar cells (PSCs).</p><h3>Graphical Abstract</h3><p>This study compares quasi-2D and MACl-modified 3D perovskites in solar cells, emphasizing structural orientation and charge transport. Quasi-2D perovskites exhibit multiple n-values with lattice distortion, while modified 3D perovskites, engineered via cation/anion tuning and MACl-modification, retain structural integrity, achieving 22.6% power conversion efficiency. These findings underscore the importance of lattice continuity in enhancing performance.</p><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"790 - 799"},"PeriodicalIF":2.6,"publicationDate":"2025-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Parallel-Conduction-Based Thermoelectric Responses in Chemical Vapor Deposition Grown Twisted Bilayer Graphene","authors":"Sung Ju Hong","doi":"10.1007/s13391-025-00595-3","DOIUrl":"10.1007/s13391-025-00595-3","url":null,"abstract":"<p>We report parallel-conduction-based thermoelectric responses in chemical vapor deposition grown hexagonal twisted bilayer graphene. We observe that two independent graphene layers form various transfer characteristics in terms of layer-asymmetric charge distribution, which can be understood by a two parallel conductor model. The thermoelectric responses exhibit distinct behavior from single systems of graphene layers, which can be explained by a two band model due to the parallel conduction. Based on the charge transport mechanism, specific transfer characteristic is demonstrated by asymmetrically tuning charge-carrier distribution between graphene layers by polymer-based dual-gate configuration.</p>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"784 - 789"},"PeriodicalIF":2.6,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multimodal MXene Artificial Synapses Realizing Optoelectronic, Olfactory, and Tactile Neuromorphic Memory in Wearable Devices","authors":"Hyojung Kim","doi":"10.1007/s13391-025-00593-5","DOIUrl":"10.1007/s13391-025-00593-5","url":null,"abstract":"<div><p>The growing expansion of data-intensive technologies is driving the search for technology capable of brain-like efficiency and adaptability. Among new two-dimensional (2D) systems, MXenes have received attention because their metallic lattices pair strong carrier mobility with surface terminations that enable ion storage. The article covers recent improvements in MXene-based resistive switching memories arranged as artificial synapses. We address the chemical origins of their adjustable conductivity, the fabrication approaches that permit transparent and flexible devices, and the processes that support analog weight modulation at low operating energy. Demonstrations across optoelectronic, gas-responsive, and pressure-sensitive platforms reveal that MXene synapses may reproduce optical, olfactory, and tactile learning within the same material family. Their conductance states remain stable whether devices are bent, folded, or weaved, offering prospects for seamless integration into wearable neural interfaces that incorporate sensing, memory, and logic along a single thread without loss of signal quality. The remaining challenges are examined. Oxidation under atmospheric conditions reduces electrical performance, and batch variation restricts array-level homogeneity. This perspective outlines unmet questions and recommends experimental priorities.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"743 - 755"},"PeriodicalIF":2.6,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterization of Thermal Conductance of Copper-to-Copper Bonded Interconnects with Metal Passivation for Three-Dimensional Integration","authors":"Hakjun Kim,&nbsp;Intae Kim,&nbsp;Wonsik Lee,&nbsp;Jae Young Hwang,&nbsp;Sarah Eunkyung Kim,&nbsp;Young-Chang Joo,&nbsp;Hyejin Jang","doi":"10.1007/s13391-025-00591-7","DOIUrl":"10.1007/s13391-025-00591-7","url":null,"abstract":"<div><p>Copper-to-Copper (Cu-to-Cu) bonding with metal passivation addresses fundamental oxidation and thermal budget in Cu-to-Cu bonding, yet thermal transport characterization remains unexplored despite critical importance for thermal management of three-dimensional integration. This study investigates the thermal conductance of Cu-to-Cu bonded interconnects with metal passivation, where quantifying the discrepancy between predicted and experimentally measured thermal transport properties in three-dimensional integrated structures enables design validation and optimization of thermal management strategies under conditions of elevated thermal density where thermal management becomes critical. We developed a time-domain thermoreflectance (TDTR) methodology employing transparent sapphire substrates to optically access the bonded layer. A tantalum (Ta) diffusion barrier is also employed to prevent aluminum-copper interdiffusion during bonding, ensuring measurement integrity. Multilayer thermal modeling incorporating comprehensive sensitivity analysis enables precise determination of the thermal conductance of localized bonded region, overcoming fundamental limitations of conventional approaches that measure bulk thermal properties across entire bonded structures. Systematic optimization of the Cu layer thickness of each side maximizes measurement sensitivity to Cu-to-Cu bonded interconnects while suppressing peripheral contributions that would otherwise compromise measurement fidelity. Comprehensive structural and material characterization via transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and selected area electron diffraction (SAED) pattern analysis revealed correlation between interfacial structure and measured thermal transport properties in metal-passivated Cu-to-Cu bonded interconnects. The measured conductance values, an order of magnitude below Wiedemann-Franz predictions from electrical resistivity data, indicate dominant electron scattering mechanisms at heterogeneous interfaces, microstructural discontinuities, and oxygen-rich regions within the bonded layer. These findings provide critical thermal management insights for 3D integrated electronic systems employing Cu-to-Cu bonding with metal passivation.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 6","pages":"829 - 842"},"PeriodicalIF":2.6,"publicationDate":"2025-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145456805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis and Properties of Branched-Crosslinked Poly(aryl piperidinium) Anion Exchange Membranes","authors":"Yuanyuan Zhou,&nbsp;Qingyang Xiao,&nbsp;Wenjie Li,&nbsp;Song Li,&nbsp;Shuchun Yu,&nbsp;Pengyan Guo","doi":"10.1007/s13391-025-00590-8","DOIUrl":"10.1007/s13391-025-00590-8","url":null,"abstract":"<div><p>As a promising sustainable energy conversion technology, anion exchange membrane fuel cells (AEMFCs) have attracted substantial research attention due to their eco-friendly characteristics, cost advantages, and potential for high efficiency. The advancement of these systems, however, remains fundamentally limited by the challenge of optimizing the critical trade-off between ionic conductivity and dimensional stability in anion exchange membranes (AEMs). This investigation proposes a novel membrane architecture combining ether-free polymer matrices with piperidinium cationic moieties to address chemical durability concerns. A series of cross-linked poly(p-triphenylpyridine) membranes were successfully fabricated through optimized Friedel-Crafts alkylation processes, incorporating pyridine-derived branching structures alongside conventional quaternary ammonium cross-linkers. The optimized QAPTTP-40% membrane exhibits outstanding electrochemical properties, achieving temperature-enhanced ionic conductivity of 116.2 mS cm⁻¹ at 80 °C through cooperative effects of branched morphology and cross-linked framework. Extended alkaline stability testing (15 days in 2 M NaOH at 80 °C) revealed exceptional chemical resilience with 85.1% conductivity retention. Structural characterization demonstrated advantageous material properties including an elevated ion exchange capacity of 2.94 mmol g⁻¹ coupled with robust mechanical strength (39.4 MPa tensile strength at ambient conditions). The synergistic combination of efficient ion transport pathways, superior alkaline durability, and mechanical robustness establishes this innovative AEM design as a competitive platform for next-generation fuel cell development. These findings provide critical insights into the rational design of high-performance anion exchange membranes through molecular engineering of polymer architectures and cationic group selection.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"726 - 741"},"PeriodicalIF":2.6,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sulfur Extraction for Stoichiometry Control of Cobalt Sulfides by Reducing Gas Annealing","authors":"In-Kyoung Ahn,&nbsp;Intae Kim,&nbsp;Young-Chang Joo","doi":"10.1007/s13391-025-00589-1","DOIUrl":"10.1007/s13391-025-00589-1","url":null,"abstract":"<div><p>In this study, we propose an anion vacancy engineering process for CoS₂-based nanomaterials using carbon monoxide (CO) thermal treatment. This process enables precise control over sulfur vacancy formation and phase transitions while preserving structural integrity through the tuning of variables such as temperature, annealing time, and gas composition.</p><p>Notably, changes in the oxidation state of cobalt and the chemical state of sulfur were systematically observed as a function of the reaction conditions, confirming that the controlled structural evolution of cobalt sulfides was mediated by selective sulfur extraction. Moreover, the values from thermodynamic calculations were in good agreement with the experimental results, demonstrating that the sulfur extraction process follows a thermodynamically favorable pathway.</p><p>The versatility of this approach extends beyond specific materials or processing conditions and can be applied to a wide range of transition metal compounds. Additionally, the process demonstrates excellent scalability, as it is not constrained by sample quantity. The ability to finely control structural and chemical properties highlights the applicability of this method to various fields where defect engineering is critical, such as electrocatalysis and energy storage devices.</p><p>In particular, sulfur-deficient CoS₂ demonstrated superior electrocatalytic performance, with an overpotential of only 327 mV at 10 mA cm^− 2 for the oxygen evolution reaction, outperforming conventional noble metal catalysts by approximately 60 mV. This result underscores the practical value and broad applicability of the proposed process.</p></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"715 - 725"},"PeriodicalIF":2.6,"publicationDate":"2025-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative Review of Field-Effect Transistors Based on Three-Dimensional, Two-Dimensional, and Double Halide Perovskites","authors":"Hyojung Kim","doi":"10.1007/s13391-025-00588-2","DOIUrl":"10.1007/s13391-025-00588-2","url":null,"abstract":"<div><p>Halide perovskites are gaining attention as potential channel materials for field-effect transistors utilized in artificial intelligence hardware, computing arrays, and sensor grids. The ABX₃ lattice exhibits a remarkable ability to accommodate various cation and halide substitutions, effectively tuning the optical gap, minimizing defect formation, and enabling solution processing at temperatures below those that induce plastic deformation. Simultaneously, mobile ions within the lattice may drift when an electric field is applied, leading to hysteresis and threshold shifts that complicate reliable operation. This review examines three structural families: three-dimensional (3D), two-dimensional (2D), and lead-free double perovskites, and connects their composition and microstructure to electronic transport. The incorporation of mixed A-site or B-site alloys leads to an increase in vacancy formation energies. The ongoing development of FETs presents opportunities to transform the future of electronic systems. This advancement has the potential to significantly enhance the capabilities of electronic systems, making them more efficient, stable, and scalable while also boosting overall performance.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"650 - 666"},"PeriodicalIF":2.6,"publicationDate":"2025-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of Hard-magnetic Properties in Mn-Al-Cr Substituted M-type Hexaferrite","authors":"Il-Ho Yoon,&nbsp;Young-Min Kang","doi":"10.1007/s13391-025-00586-4","DOIUrl":"10.1007/s13391-025-00586-4","url":null,"abstract":"<div><p>This study investigates the magnetic properties of isotropic sintered magnets based on M-type hexaferrite SrFe₁₂O₁₉, enhanced through multi-cation substitution with Al, Cr, and Mn. M-type hexaferrite samples with the general formula SrFe_{12 − 2<i>x</i>}Al_<i>x</i>Cr_<i>x</i>O₁₉ (<i>x</i> = 0–0.3) were synthesized via a solid-state reaction method to investigate the effects of Al–Cr substitution on the structural and magnetic properties. X-ray diffraction (XRD) analysis confirmed the formation of a single-phase M-type hexaferrite with minor traces of Fe₂O₃ in some samples. Magnetic characterization showed that coercivity (H_C) increased while remanent magnetization (4πM_r) decreased with increasing <i>x</i>, exhibiting a typical trade-off behavior. Among the compositions, <i>x</i> = 0.2 exhibited the most balanced magnetic properties. Based on this, further substitutions with Mn, Co, La, and Ce were introduced, and Mn substitution slightly enhanced H_C. Optimization of sintering additives and temperature revealed that the composition SrFe_11.5Mn_0.1Al_0.2Cr_0.2O₁₉, sintered with 1 wt% CaCO₃ + 1 wt% SiO₂ at 1230 °C, exhibited the best performance with 4πM_r = 2207 G and H_C = 5304 Oe. The results demonstrate that simultaneous multi-cation substitution and sintering condition control can significantly enhance the hard-magnetic properties of M-type hexaferrites.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"697 - 706"},"PeriodicalIF":2.6,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent Advances in Ligand Engineering for Stable Halide Perovskite Light-Emitting Diodes","authors":"Sol Lee,&nbsp;Hae Jin Jo,&nbsp;Sang Mok Han,&nbsp;Young Ju Kim,&nbsp;Soo Young Kim","doi":"10.1007/s13391-025-00587-3","DOIUrl":"10.1007/s13391-025-00587-3","url":null,"abstract":"<div><p>Lead halide perovskites have significant potential as promising materials for a wide range of optoelectronic applications, including solar cells, light-emitting diodes, and photodetectors, due to their outstanding optical and electrical properties. Despite these remarkable properties, their intrinsic structural and environmental instability remains a major barrier to commercialization, as they are highly susceptible to degradation under heat, light, moisture, and bias. To address these challenges, extensive efforts have been devoted to improving the stability of perovskite materials through ligand engineering. In particular, diverse organic ligands with carefully tailored molecular structures have been developed to passivate surface defects and enhance structural robustness. This review highlights recent progress in ligand engineering strategies, focusing on how the structural design of ligands, specifically the number of functional groups within each ligand and the number of ligands coordinating with the perovskite surface, can effectively suppress degradation pathways and improve device performance. Based on these criteria, ligands are categorized into monodentate, polydentate, and dual-ligand systems. This classification provides a framework for systematically exploring ligand–perovskite interactions, ultimately contributing to the realization of durable, efficient, and commercially viable perovskite-based optoelectronic devices.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"21 5","pages":"633 - 649"},"PeriodicalIF":2.6,"publicationDate":"2025-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144990583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}