Electronic Materials Letters最新文献

{"title":"Contact Area of Electrification Materials Relating to Triboelectric Generators: A Comparative Study","authors":"Aristeidis Repoulias,&nbsp;Irini Logothetis,&nbsp;Dimitra Matsouka,&nbsp;Savvas Vassiliadis","doi":"10.1007/s13391-023-00470-z","DOIUrl":"10.1007/s13391-023-00470-z","url":null,"abstract":"<div><p>Triboelectric generators (TEGs) stemming from the triboelectric phenomena, are promising for energy harvesting due to their high output power and efficiency. Analysis of the tribo material selection for TEGs has suggested that energy generation is linked to heterogeneous and homogeneous materials found at opposite ends of the triboelectric series. Current research has identified that the triboelectric phenomenon also exists from contact between identical tribo materials with the advancement of surface modification. However, a comparison of composite and identical homogeneous TEGs has yet to be reported. For this research, organic polymer membranes Polyamide-6 (PA6) and Polytetrafluoroethylene (PTFE) were evaluated. The membranes were cut into samples of varying dimensions to build three sets of TEGs for comparison. Two identical sets of four sampled TEGs were fabricated using the same membrane (i.e., PA6-PA6 and PTFE-PTFE); in contrast to a composite set of four sampled TEGs made from the two distinct membranes (i.e., PA6-PTFE). By repeatedly sampling the TEGs in sliding mode at a speed of 0.2 m/s and with a vertical force of 9.8 N an open circuit voltage (<i>V</i>_<i>oc</i>) was generated and recorded. As a result, the <i>V</i>_<i>oc</i> of the identical TEGs was compared to the <i>V</i>_<i>oc</i> of the composite TEG in which the tribo materials are located at opposite ends of the triboelectric series. It was also observed that the <i>V</i>_<i>oc</i> increased almost linear in relation to the surface area of the TEGs; thus, suggesting that the surface area of the TEG can influence significantly the <i>V</i>_<i>oc</i> to a great extent.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"283 - 292"},"PeriodicalIF":2.1,"publicationDate":"2023-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s13391-023-00470-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138506847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of Sputtering Parameters and Their Effect on Structural and Electrical Properties of CAAC-IGZO Thin-Film Transistors","authors":"Jae Yu Cho,&nbsp;Jaeseung Jo,&nbsp;Parag R. Patil,&nbsp;Yong Tae Kim,&nbsp;Deok-Yong Cho,&nbsp;Jin Hyeok Kim,&nbsp;Jaeyeong Heo","doi":"10.1007/s13391-023-00472-x","DOIUrl":"10.1007/s13391-023-00472-x","url":null,"abstract":"<div><p>A c-axis aligned crystalline indium gallium zinc oxide (CAAC-IGZO) possesses unique properties beneficial for thin-film transistors (TFTs). In this study, we investigate the effect of oxygen ratio and radio frequency (RF) power on the structural, electrical, and operational characteristics of CAAC-IGZO thin films. Films were deposited on SiO₂ substrates using an RF sputtering system equipped with a target containing In, Ga, Zn, and O with a composition ratio of 1:1:1:4. The effect of oxygen percentage on the structural characteristics was analyzed by X-ray diffraction (XRD), transmission electron microscopy (TEM). The oxygen percentage in the film was found to play a crucial role in forming the CAAC-IGZO and orientation of the thin films. With increasing O₂ fraction, the (009)-preferred orientation of the films improved. X-ray absorption spectroscopy also validated the improved orientations of the CAAC-IGZO with high O₂ concentrations up to 70%. In terms of TFT performance, however, the device with 3.3% oxygen exhibited the best performance with a saturation mobility of 10.9 cm² V^− 1 s^− 1. TFT devices were prepared at a low oxygen fraction (10%) with different RF power inputs from 100 to 250 W, where the device prepared with highest power (250 W) showed the best performance.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"372 - 380"},"PeriodicalIF":2.1,"publicationDate":"2023-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138506839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface Chemical Reactions During Atomic Layer Deposition of Zinc Oxynitride (ZnON)","authors":"Tran Thi Ngoc Van,&nbsp;Bonggeun Shong","doi":"10.1007/s13391-023-00467-8","DOIUrl":"10.1007/s13391-023-00467-8","url":null,"abstract":"<div><p>Atomic layer deposition (ALD) is a promising technique for fabricating high-quality thin films. For improving the process conditions and material quality of ALD, understanding the surface chemical mechanisms at the molecular level is important as the entire ALD process is based on the reactions of precursors on the substrate surfaces. Zinc oxynitride (ZnON) is gaining significant research interest as a<i> p</i>-type semiconductor material. Although the ALD of ZnON can be performed by dosing H₂O and NH₃ as oxygen and nitrogen sources, respectively, the elemental ratio of O and N in the deposited film differs considerably from that in the gaseous sources. In this study, the surface reactions of ZnON ALD are analyzed employing density functional theory calculations. All the ALD surface reactions of ZnO and ZnN are facile and expected to occur rapidly. However, the substitution of a surface *NH₂ by H₂O to form *OH is preferred, whereas the inverse reaction is implausible. We propose that the differences in the reactivity could originate from the higher bond energy of Zn–O than that of Zn–N.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"500 - 507"},"PeriodicalIF":2.1,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135141879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inkjet-Printed Flexible Ultrasensitive Chemiresistive Sensors for Aggregation Pheromone of Flour Beetles","authors":"Yunnan Fang,&nbsp;Manos M. Tentzeris","doi":"10.1007/s13391-023-00466-9","DOIUrl":"10.1007/s13391-023-00466-9","url":null,"abstract":"<div><p>This work reports the first demonstration that a chemoresistive sensor can be used to detect the aggregation pheromone of flour beetles. To prepare the sensing element of such a sensor, a novel functionalization method was developed to amplify amine groups on the surface of carbon nanotubes (CNTs). Unlike traditional amine-amplification approaches in which amplification efficiency is significantly reduced by self-crosslinking, the current amine amplification process was self-crosslinking-free due to the use of a home-made compound in which amine groups were protected by Boc (tert-butyloxycarbonyl) protecting groups and could be deprotected as needed. The inkjet ink formulated from the functionalized CNTs, together with an amine-rich compound and a commercial silver nanoparticle-based inkjet ink, was used to fabricate (via inkjet-printing and drop-casting) lightweight, flexible, and miniature-sized chemiresistive sensors for 4,8-dimethyldecanal (DMD), a compound known to be the aggregation pheromone of several species of flour beetles. A home-built gas sensing system, including a commercial gas generator, a DMD permeation tube with its emission rate certified, a data-acquisition system, and some home-developed LabVIEW-based programs, was utilized to perform the DMD sensing trials. The sensors showed ultra-high sensitivity to synthetic aggregation pheromone DMD, as indicated by their prompt and significant responses to 100 ppb DMD vapor. A mechanism for the sensitive sensing of DMD is proposed.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"244 - 253"},"PeriodicalIF":2.1,"publicationDate":"2023-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135341583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An Ideal Two-Dimensional Porous B4O2 as Anode Material for Enhancing Ion Storage Performance","authors":"Chen Li,&nbsp;Yangtong Luo,&nbsp;Zhangyan Wang,&nbsp;Chengyong Zhong,&nbsp;Shuo Li","doi":"10.1007/s13391-023-00465-w","DOIUrl":"10.1007/s13391-023-00465-w","url":null,"abstract":"<div><p>The utilization of two-dimensional porous materials as anodes in ion batteries has garnered significant interest within the field of clean energy because of their flexible architecture, high conductivity, rapid diffusion process and high specific ion capacity. Herein, we developed a new metal-free 2D porous compound, namely, B₄O₂. The stability of the B₄O₂ monolayer was verified through the ab-initio molecular dynamics simulations and phonon spectrum calculations. The results demonstrate that the adsorption of K, Na, and Li atoms onto the B₄O₂ monolayer surface is remarkably stable, with all three species exhibiting a shared diffusion path. Specifically, we found that the adsorption of K atoms on the B₄O₂ monolayer surpasses that of Na and Li atoms, and the diffusion of K atoms occurs at a faster rate than Na and Li atoms on the same monolayer surface. The maximum theoretical specific capacity of K⁺, Na⁺ and Li⁺ is calculated to be 626.1 mAh/g. In addition, the B₄O₂ monolayer retains good electronic conductivity and electron activity during the atomic adsorption processes. Based on our findings, the B₄O₂ monolayer exhibits significant potential as anode material for ion batteries. This study paves the way for a novel approach in designing new 2D porous materials specifically tailored for energy storage and conversion applications.</p><h3>Graphical Abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"275 - 282"},"PeriodicalIF":2.1,"publicationDate":"2023-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135432681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Near-Ultraviolet Lateral Photovoltaic Effect of Epitaxial Nb:SrTiO3 Films on Si Substrate Using TiN as a Buffer Layer","authors":"Fang Wang,&nbsp;Yu Liu,&nbsp;Tian Yu,&nbsp; Cai,&nbsp;Wenfeng Xiang","doi":"10.1007/s13391-023-00469-6","DOIUrl":"10.1007/s13391-023-00469-6","url":null,"abstract":"<div><p>In recent years, significant attention has been directed toward exploring heterojunctions based on perovskite materials for ultraviolet photodetectors. This study focuses on the fabrication of high-quality single-crystal Nb:SrTiO₃ (NSTO) films on Si substrates, achieved through the utilization of a TiN thin film as a buffer layer. The investigation delves into the lateral photovoltaic effect exhibited by the film. Characterization using X-ray diffraction and high-resolution transmission electron microscopy confirms the exceptional quality of the NSTO film. Notably, the observed position sensitivity attains an impressive value of 43.9 mV mm−1. Analysis of the lateral photovoltaic effect reveals response and relaxation times of approximately 105.6 ns and 4.49 µs, respectively. Intriguingly, fitting results for the relaxation time indicate minimal defects within the NSTO/TiN/Si heterostructures. These findings underscore the significant potential of NSTO/TiN/Si heterojunctions, presenting a promising avenue for their widespread application in the realm of position change technology.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 3","pages":"269 - 274"},"PeriodicalIF":2.1,"publicationDate":"2023-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135934212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electron-Beam-Induced Formation of Oxygen Vacancies in Epitaxial LaCoO3 Thin Films","authors":"Seung Jo Yoo,&nbsp;Tae Gyu Yun,&nbsp;Jae Hyuck Jang,&nbsp;Ji-Hyun Lee,&nbsp;Changhyun Park,&nbsp;Sung-Yoon Chung","doi":"10.1007/s13391-023-00468-7","DOIUrl":"10.1007/s13391-023-00468-7","url":null,"abstract":"<div><p>The formation of oxygen vacancies in heteroepitaxial LaCoO₃ thin films deposited on different substrates was investigated by using electron beam irradiation in atomic-scale scanning transmission electron microscopy (STEM). As the electron beam irradiation intensified, distinctive dark stripe patterns were identified in high-angle annular dark-field STEM images, demonstrating the formation and subsequent ordering of oxygen vacancies. A comprehensive quantitative analysis of the lattice parameter changes verified the significant expansion of unit cells associated with the presence of oxygen vacancies. In particular, a uniform distribution of these expanded unit cells was observed in the films under large tensile strain. These experimental findings emphasize the significant role of strain in generating oxygen vacancies in perovskite oxide materials.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 4","pages":"491 - 499"},"PeriodicalIF":2.1,"publicationDate":"2023-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136103635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochromic Performances of rGO-WO3 Thin Film and Its Application as an Integrated Device Powered with Quantum Dot-Sensitized Solar Cells","authors":"Aryal Krishna Prasad,&nbsp;Jong-Young Park,&nbsp;Soon-Hyung Kang,&nbsp;Kwang-Soon Ahn","doi":"10.1007/s13391-023-00464-x","DOIUrl":"10.1007/s13391-023-00464-x","url":null,"abstract":"<div><p>Reduced graphene oxide (rGO)-embedded WO₃ composite thin film (rGO-WO₃) is synthesized and investigated for its electrochromic performances. Furthermore, a novel application of quantum dot-sensitized solar cells (QDSSCs), to operate the rGO-WO₃ electrochromic devices (ECDs), is demonstrated with development of an integrated device. The co-existence of both WO₃ nanostructure and rGO sheet ameliorates the EC performances of composite thin film, compared to WO₃ thin film. The rGO-WO₃, possessing 0.1 g of rGO, nanocomposite shows an optimum optical contrast (%ΔT) of 66.3% and excellent optical stability displaying 1.7% degradation in %ΔT, while the WO₃ film only exhibits a %ΔT of 52.2% and, 4.2% of optical degradation. Incorporation of rGO sheet into the WO₃ nanostructure introduces de-agglomerated morphology, enhances electrochemically active surface area, and which facilitates the ion-transfer kinetics. The series-connected QDSSCs results an optimum open circuit voltage (V_oc) of 1.03 V upon 1 sun illumination, which is found to be adequate for the study of switching performances of ECDs. QDSSCs assisted rGO-WO₃ EC film exhibits a significant %ΔT of 43% and coloration time of 7 s. Additionally, QDSSCs device is illuminated with various light intensities to study the intensity and V_oc dependent EC performances of rGO-WO₃.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 6","pages":"756 - 766"},"PeriodicalIF":2.1,"publicationDate":"2023-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135266441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Relationship Between Electrical Conductivity and Supercapacitor Properties of Co3O4 Nanofibers Fabricated by Electrospinning","authors":"Hyo-Min Choi,&nbsp;Jong-Won Yoon","doi":"10.1007/s13391-023-00461-0","DOIUrl":"10.1007/s13391-023-00461-0","url":null,"abstract":"<div><p>Co₃O₄ with a spinel structure has been utilized as supercapacitor materials due to their active surface sites, strong absorption capacity, excellent electrochemical activity, and stability. In this study, we tried to explore the optimized electrospinning conditions, including heat-treatment temperature for Co₃O₄ nanofiber fabrication for supercapacitor applications. The X-ray diffraction patterns of Co₃O₄ nanofibers annealed at 600 and 800 ºC showed a cubic spinel crystal structure without a secondary phase, but CoO was found in the specimens annealed at 400 ºC. From the XPS curve fitting, Co³⁺ increased in the Co³⁺/Co²⁺ ratio with increasing heat-treatment temperature. The electrical conductivity of the Co₃O₄ nanofibers heated at 400, 600, and 800 ºC is 7.53 × 10⁻³, 1.12 × 10⁻², and 6.26 × 10⁻³ Ω⁻¹ cm⁻¹, respectively. The Co₃O₄ nanofibers heat treated at 600 ºC showed the highest conductivity value, and the conduction mechanism was polaron hopping between Co³⁺ and Co²⁺. The supercapacitor properties of Co₃O₄ nanofibers are evaluated by cyclic voltammetry (CV), galvanostatic charge–discharge (GCD), and electrochemical impedance measurement using a three-electrode system in a 3 M KOH electrolyte. The GCD tests showed that the Co₃O₄ nanofibers heated at 600 ºC had the highest specific capacitance of 579.66 F/g. From the electrochemical impedance measurements, the charge transfer resistance (R_ct) of calcined Co₃O₄ nanofibers at 600 ºC showed the lowest value of 1.27 Ω. Also, the Co₃O₄ nanofiber exhibits excellent cycle stability with capacitance retention over 99% until 1000 cycles at a current density of 2 A/g. Therefore, the excellent supercapacitor performance of Co₃O₄ nanofibers annealed at 600 ºC is due to its nanofiber structure without a secondary phase providing a larger surface area and charge transfer.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"20 1","pages":"78 - 84"},"PeriodicalIF":2.1,"publicationDate":"2023-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135265886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Rationalized Molten-Salt Synthesis of Carbon-Enriched Pb-C Composite for Lead-Acid Battery Positive Electrode Grids","authors":"Jaewook Kim, Jahun Koo, Byungwoo Park, Chunjoong Kim, Chong Rae Park","doi":"10.1007/s13391-023-00463-y","DOIUrl":"https://doi.org/10.1007/s13391-023-00463-y","url":null,"abstract":"","PeriodicalId":536,"journal":{"name":"Electronic Materials Letters","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136294588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}